JPWO2023063046A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2023063046A5
JPWO2023063046A5 JP2023532640A JP2023532640A JPWO2023063046A5 JP WO2023063046 A5 JPWO2023063046 A5 JP WO2023063046A5 JP 2023532640 A JP2023532640 A JP 2023532640A JP 2023532640 A JP2023532640 A JP 2023532640A JP WO2023063046 A5 JPWO2023063046 A5 JP WO2023063046A5
Authority
JP
Japan
Prior art keywords
layer
adhesive layer
nitride semiconductor
crystal silicon
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023532640A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023063046A1 (https=
JP7533793B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/035314 external-priority patent/WO2023063046A1/ja
Publication of JPWO2023063046A1 publication Critical patent/JPWO2023063046A1/ja
Publication of JPWO2023063046A5 publication Critical patent/JPWO2023063046A5/ja
Application granted granted Critical
Publication of JP7533793B2 publication Critical patent/JP7533793B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2023532640A 2021-10-15 2022-09-22 窒化物半導体基板及びその製造方法 Active JP7533793B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021169808 2021-10-15
JP2021169808 2021-10-15
PCT/JP2022/035314 WO2023063046A1 (ja) 2021-10-15 2022-09-22 窒化物半導体基板及びその製造方法

Publications (3)

Publication Number Publication Date
JPWO2023063046A1 JPWO2023063046A1 (https=) 2023-04-20
JPWO2023063046A5 true JPWO2023063046A5 (https=) 2023-09-21
JP7533793B2 JP7533793B2 (ja) 2024-08-14

Family

ID=85987682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023532640A Active JP7533793B2 (ja) 2021-10-15 2022-09-22 窒化物半導体基板及びその製造方法

Country Status (3)

Country Link
JP (1) JP7533793B2 (https=)
TW (1) TW202336831A (https=)
WO (1) WO2023063046A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025156774A (ja) * 2024-04-02 2025-10-15 信越半導体株式会社 高周波用ｓｏｉウェーハの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831419B2 (ja) * 1990-12-25 1996-03-27 名古屋大学長 単結晶珪素基板上への化合物半導体単結晶の作製方法
JP2005203666A (ja) * 2004-01-19 2005-07-28 Kansai Electric Power Co Inc:The 化合物半導体デバイスの製造方法
JP2006196713A (ja) 2005-01-13 2006-07-27 National Institute Of Advanced Industrial & Technology 半導体装置及びその作製方法並びに重水素処理装置
JP5817127B2 (ja) 2011-01-21 2015-11-18 株式会社Sumco 半導体基板及びその製造方法
JP5912383B2 (ja) 2011-10-03 2016-04-27 クアーズテック株式会社 窒化物半導体基板
JP6101565B2 (ja) * 2013-05-27 2017-03-22 シャープ株式会社 窒化物半導体エピタキシャルウェハ
WO2017218536A1 (en) 2016-06-14 2017-12-21 Quora Technology, Inc. Engineered substrate structure for power and rf applications
TWI692869B (zh) * 2019-05-03 2020-05-01 世界先進積體電路股份有限公司 基底及其製造方法
JP7549549B2 (ja) * 2021-02-26 2024-09-11 信越半導体株式会社 窒化物半導体基板およびその製造方法

Similar Documents

Publication Publication Date Title
CN101207016B (zh) 半导体异质结构
CN100437905C (zh) 形成晶格调谐的半导体衬底
JP2019524615A5 (https=)
JP2020505767A (ja) パワーデバイス用の窒化ガリウムエピタキシャル構造
JP2008538658A5 (https=)
JP5230116B2 (ja) 高配向性シリコン薄膜の形成方法、３次元半導体素子の製造方法及び３次元半導体素子
CN100444323C (zh) 形成晶格调制半导体基片
TW200917338A (en) Structures having lattice-mismatched single-crystalline semiconductor layers on the same lithographic level and methods of manufacturing the same
CN108695341B (zh) 外延基板及其制造方法
US20070278574A1 (en) Compound semiconductor-on-silicon wafer with a thermally soft insulator
CN1315155C (zh) 一种绝缘层上硅结构的制备方法
JP2012079952A (ja) 窒化ガリウム系化合物半導体基板とその製造方法
CN101273438A (zh) 薄膜元件的制造方法
JPWO2023063046A5 (https=)
CN102810466A (zh) 用于制造半导体衬底的方法
CN103222072B (zh) 用于制造光电子半导体芯片的方法以及半导体芯片
TW200919540A (en) SOI substrate and semiconductor device using the SOI substrate
JPWO2023063278A5 (https=)
JPWO2023047864A5 (https=)
CN106783968B (zh) 含有氮镓铝和氮镓铟的缓存层的半导体器件及其制造方法
CN115117150A (zh) 一种GaN HEMT功率器件及其制备方法
JP5989559B2 (ja) 複合基板
JPH0613593A (ja) 半導体基板
JPH06275525A (ja) Ｓｏｉ基板及びその製造方法
JP7533793B2 (ja) 窒化物半導体基板及びその製造方法