JPWO2023063278A5 - - Google Patents
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- Publication number
- JPWO2023063278A5 JPWO2023063278A5 JP2023532641A JP2023532641A JPWO2023063278A5 JP WO2023063278 A5 JPWO2023063278 A5 JP WO2023063278A5 JP 2023532641 A JP2023532641 A JP 2023532641A JP 2023532641 A JP2023532641 A JP 2023532641A JP WO2023063278 A5 JPWO2023063278 A5 JP WO2023063278A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- nitride semiconductor
- adhesive layer
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 84
- 239000000758 substrate Substances 0.000 claims 82
- 150000004767 nitrides Chemical class 0.000 claims 40
- 239000004065 semiconductor Substances 0.000 claims 40
- 239000012790 adhesive layer Substances 0.000 claims 39
- 239000010409 thin film Substances 0.000 claims 22
- 239000002131 composite material Substances 0.000 claims 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 20
- 229910010271 silicon carbide Inorganic materials 0.000 claims 20
- 239000013078 crystal Substances 0.000 claims 18
- 238000004519 manufacturing process Methods 0.000 claims 15
- 239000000919 ceramic Substances 0.000 claims 13
- 238000000034 method Methods 0.000 claims 13
- 230000004888 barrier function Effects 0.000 claims 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 238000010030 laminating Methods 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 229910002704 AlGaN Inorganic materials 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021169906 | 2021-10-15 | ||
| JP2021169906 | 2021-10-15 | ||
| PCT/JP2022/037756 WO2023063278A1 (ja) | 2021-10-15 | 2022-10-11 | 窒化物半導体基板及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023063278A1 JPWO2023063278A1 (https=) | 2023-04-20 |
| JPWO2023063278A5 true JPWO2023063278A5 (https=) | 2023-09-21 |
| JP7533794B2 JP7533794B2 (ja) | 2024-08-14 |
Family
ID=85987755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023532641A Active JP7533794B2 (ja) | 2021-10-15 | 2022-10-11 | 窒化物半導体基板の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7533794B2 (https=) |
| TW (1) | TW202331817A (https=) |
| WO (1) | WO2023063278A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12454768B1 (en) * | 2024-11-08 | 2025-10-28 | Wolfspeed, Inc. | Hybrid seed structure for crystal growth system |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831419B2 (ja) * | 1990-12-25 | 1996-03-27 | 名古屋大学長 | 単結晶珪素基板上への化合物半導体単結晶の作製方法 |
| JP2005203666A (ja) * | 2004-01-19 | 2005-07-28 | Kansai Electric Power Co Inc:The | 化合物半導体デバイスの製造方法 |
| JP2006222402A (ja) * | 2005-02-14 | 2006-08-24 | Toshiba Ceramics Co Ltd | 窒化ガリウム系化合物半導体および製造方法 |
| JP2007087992A (ja) * | 2005-09-20 | 2007-04-05 | Showa Denko Kk | 半導体素子および半導体素子製造方法 |
| US9012253B2 (en) * | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
| JP5817127B2 (ja) * | 2011-01-21 | 2015-11-18 | 株式会社Sumco | 半導体基板及びその製造方法 |
| WO2017218536A1 (en) * | 2016-06-14 | 2017-12-21 | Quora Technology, Inc. | Engineered substrate structure for power and rf applications |
| TWI692869B (zh) * | 2019-05-03 | 2020-05-01 | 世界先進積體電路股份有限公司 | 基底及其製造方法 |
-
2022
- 2022-10-11 JP JP2023532641A patent/JP7533794B2/ja active Active
- 2022-10-11 WO PCT/JP2022/037756 patent/WO2023063278A1/ja not_active Ceased
- 2022-10-12 TW TW111138581A patent/TW202331817A/zh unknown
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