JPWO2023047864A5 - - Google Patents
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- Publication number
- JPWO2023047864A5 JPWO2023047864A5 JP2023549420A JP2023549420A JPWO2023047864A5 JP WO2023047864 A5 JPWO2023047864 A5 JP WO2023047864A5 JP 2023549420 A JP2023549420 A JP 2023549420A JP 2023549420 A JP2023549420 A JP 2023549420A JP WO2023047864 A5 JPWO2023047864 A5 JP WO2023047864A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nitride semiconductor
- adhesive layer
- semiconductor substrate
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 71
- 239000000758 substrate Substances 0.000 claims 51
- 239000012790 adhesive layer Substances 0.000 claims 36
- 150000004767 nitrides Chemical class 0.000 claims 35
- 239000004065 semiconductor Substances 0.000 claims 35
- 230000004888 barrier function Effects 0.000 claims 17
- 239000002131 composite material Substances 0.000 claims 15
- 239000000919 ceramic Substances 0.000 claims 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 12
- 239000010409 thin film Substances 0.000 claims 12
- 229910052727 yttrium Inorganic materials 0.000 claims 8
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 4
- 239000000463 material Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021152843 | 2021-09-21 | ||
| JP2021152843 | 2021-09-21 | ||
| PCT/JP2022/031572 WO2023047864A1 (ja) | 2021-09-21 | 2022-08-22 | 窒化物半導体基板及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023047864A1 JPWO2023047864A1 (https=) | 2023-03-30 |
| JPWO2023047864A5 true JPWO2023047864A5 (https=) | 2024-05-30 |
| JP7652274B2 JP7652274B2 (ja) | 2025-03-27 |
Family
ID=85720515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023549420A Active JP7652274B2 (ja) | 2021-09-21 | 2022-08-22 | 窒化物半導体基板及びその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240387170A1 (https=) |
| EP (1) | EP4407657A4 (https=) |
| JP (1) | JP7652274B2 (https=) |
| CN (1) | CN117941030A (https=) |
| TW (1) | TW202317822A (https=) |
| WO (1) | WO2023047864A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN218351409U (zh) * | 2022-06-30 | 2023-01-20 | 苏州晶湛半导体有限公司 | 一种半导体结构 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4920875B2 (ja) * | 2003-05-29 | 2012-04-18 | パナソニック株式会社 | Ｉｉｉ族窒化物結晶の製造方法、およびｉｉｉ族窒化物基板の製造方法 |
| WO2012176411A1 (ja) * | 2011-06-24 | 2012-12-27 | 住友化学株式会社 | トランジスタ用半導体基板、トランジスタ及びトランジスタ用半導体基板の製造方法 |
| US9330911B2 (en) * | 2011-08-22 | 2016-05-03 | Invenlux Limited | Light emitting device having group III-nitride current spreading layer doped with transition metal or comprising transition metal nitride |
| KR102188493B1 (ko) * | 2014-04-25 | 2020-12-09 | 삼성전자주식회사 | 질화물 단결정 성장방법 및 질화물 반도체 소자 제조방법 |
| WO2017218536A1 (en) * | 2016-06-14 | 2017-12-21 | Quora Technology, Inc. | Engineered substrate structure for power and rf applications |
| US10355120B2 (en) | 2017-01-18 | 2019-07-16 | QROMIS, Inc. | Gallium nitride epitaxial structures for power devices |
-
2022
- 2022-08-22 US US18/691,782 patent/US20240387170A1/en active Pending
- 2022-08-22 CN CN202280061885.9A patent/CN117941030A/zh active Pending
- 2022-08-22 WO PCT/JP2022/031572 patent/WO2023047864A1/ja not_active Ceased
- 2022-08-22 JP JP2023549420A patent/JP7652274B2/ja active Active
- 2022-08-22 EP EP22872620.4A patent/EP4407657A4/en active Pending
- 2022-08-26 TW TW111132217A patent/TW202317822A/zh unknown
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