JP2023092416A5 - - Google Patents

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JP2023092416A5
JP2023092416A5 JP2022032212A JP2022032212A JP2023092416A5 JP 2023092416 A5 JP2023092416 A5 JP 2023092416A5 JP 2022032212 A JP2022032212 A JP 2022032212A JP 2022032212 A JP2022032212 A JP 2022032212A JP 2023092416 A5 JP2023092416 A5 JP 2023092416A5
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JP
Japan
Prior art keywords
nitride semiconductor
substrate
layer
group iii
iii nitride
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JP2022032212A
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English (en)
Japanese (ja)
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JP2023092416A (ja
JP7711608B2 (ja
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Priority to CN202280083343.1A priority Critical patent/CN118900941A/zh
Priority to US18/721,491 priority patent/US20250059676A1/en
Priority to PCT/JP2022/041534 priority patent/WO2023119916A1/ja
Priority to EP22910635.6A priority patent/EP4455375A1/en
Priority to TW111143110A priority patent/TW202331794A/zh
Publication of JP2023092416A publication Critical patent/JP2023092416A/ja
Publication of JP2023092416A5 publication Critical patent/JP2023092416A5/ja
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JP2022032212A 2021-12-21 2022-03-03 窒化物半導体基板の製造方法 Active JP7711608B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN202280083343.1A CN118900941A (zh) 2021-12-21 2022-11-08 氮化物半导体基板及氮化物半导体基板的制造方法
US18/721,491 US20250059676A1 (en) 2021-12-21 2022-11-08 Nitride semiconductor substrate and method for producing nitride semiconductor substrate
PCT/JP2022/041534 WO2023119916A1 (ja) 2021-12-21 2022-11-08 窒化物半導体基板および窒化物半導体基板の製造方法
EP22910635.6A EP4455375A1 (en) 2021-12-21 2022-11-08 Nitride semiconductor substrate and method for manufacturing nitride semiconductor substrate
TW111143110A TW202331794A (zh) 2021-12-21 2022-11-11 氮化物半導體基板及氮化物半導體基板的製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021207564 2021-12-21
JP2021207564 2021-12-21

Publications (3)

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JP2023092416A JP2023092416A (ja) 2023-07-03
JP2023092416A5 true JP2023092416A5 (https=) 2024-06-12
JP7711608B2 JP7711608B2 (ja) 2025-07-23

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JP2022032212A Active JP7711608B2 (ja) 2021-12-21 2022-03-03 窒化物半導体基板の製造方法

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Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6248135B2 (ja) * 2011-09-12 2017-12-13 住友化学株式会社 窒化物半導体結晶の製造方法
US10622468B2 (en) * 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
JP7319227B2 (ja) * 2020-05-11 2023-08-01 信越化学工業株式会社 Iii-v族化合物結晶用ベース基板及びその製造方法

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