JP7711608B2 - 窒化物半導体基板の製造方法 - Google Patents

窒化物半導体基板の製造方法

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Publication number
JP7711608B2
JP7711608B2 JP2022032212A JP2022032212A JP7711608B2 JP 7711608 B2 JP7711608 B2 JP 7711608B2 JP 2022032212 A JP2022032212 A JP 2022032212A JP 2022032212 A JP2022032212 A JP 2022032212A JP 7711608 B2 JP7711608 B2 JP 7711608B2
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Japan
Prior art keywords
substrate
nitride semiconductor
layer
group iii
iii nitride
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JP2022032212A
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English (en)
Japanese (ja)
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JP2023092416A (ja
JP2023092416A5 (https=
Inventor
一平 久保埜
和徳 萩本
大地 北爪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to CN202280083343.1A priority Critical patent/CN118900941A/zh
Priority to US18/721,491 priority patent/US20250059676A1/en
Priority to PCT/JP2022/041534 priority patent/WO2023119916A1/ja
Priority to EP22910635.6A priority patent/EP4455375A1/en
Priority to TW111143110A priority patent/TW202331794A/zh
Publication of JP2023092416A publication Critical patent/JP2023092416A/ja
Publication of JP2023092416A5 publication Critical patent/JP2023092416A5/ja
Application granted granted Critical
Publication of JP7711608B2 publication Critical patent/JP7711608B2/ja
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2022032212A 2021-12-21 2022-03-03 窒化物半導体基板の製造方法 Active JP7711608B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN202280083343.1A CN118900941A (zh) 2021-12-21 2022-11-08 氮化物半导体基板及氮化物半导体基板的制造方法
US18/721,491 US20250059676A1 (en) 2021-12-21 2022-11-08 Nitride semiconductor substrate and method for producing nitride semiconductor substrate
PCT/JP2022/041534 WO2023119916A1 (ja) 2021-12-21 2022-11-08 窒化物半導体基板および窒化物半導体基板の製造方法
EP22910635.6A EP4455375A1 (en) 2021-12-21 2022-11-08 Nitride semiconductor substrate and method for manufacturing nitride semiconductor substrate
TW111143110A TW202331794A (zh) 2021-12-21 2022-11-11 氮化物半導體基板及氮化物半導體基板的製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021207564 2021-12-21
JP2021207564 2021-12-21

Publications (3)

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JP2023092416A JP2023092416A (ja) 2023-07-03
JP2023092416A5 JP2023092416A5 (https=) 2024-06-12
JP7711608B2 true JP7711608B2 (ja) 2025-07-23

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JP2022032212A Active JP7711608B2 (ja) 2021-12-21 2022-03-03 窒化物半導体基板の製造方法

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JP (1) JP7711608B2 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017193486A (ja) 2011-09-12 2017-10-26 住友化学株式会社 窒化物半導体結晶の製造方法、窒化物半導体エピタキシヤルウエハ、および窒化物半導体自立基板
JP2020508278A (ja) 2017-02-21 2020-03-19 クロミス，インコーポレイテッド 加工基板に集積されているｒｆデバイス
JP2021178768A (ja) 2020-05-11 2021-11-18 信越化学工業株式会社 Ｉｉｉ−ｖ族化合物結晶用ベース基板及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017193486A (ja) 2011-09-12 2017-10-26 住友化学株式会社 窒化物半導体結晶の製造方法、窒化物半導体エピタキシヤルウエハ、および窒化物半導体自立基板
JP2020508278A (ja) 2017-02-21 2020-03-19 クロミス，インコーポレイテッド 加工基板に集積されているｒｆデバイス
JP2021178768A (ja) 2020-05-11 2021-11-18 信越化学工業株式会社 Ｉｉｉ−ｖ族化合物結晶用ベース基板及びその製造方法

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JP2023092416A (ja) 2023-07-03

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