JP7533794B2 - 窒化物半導体基板の製造方法 - Google Patents

窒化物半導体基板の製造方法 Download PDF

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Publication number
JP7533794B2
JP7533794B2 JP2023532641A JP2023532641A JP7533794B2 JP 7533794 B2 JP7533794 B2 JP 7533794B2 JP 2023532641 A JP2023532641 A JP 2023532641A JP 2023532641 A JP2023532641 A JP 2023532641A JP 7533794 B2 JP7533794 B2 JP 7533794B2
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Prior art keywords
layer
substrate
nitride semiconductor
silicon carbide
thin film
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Japanese (ja)
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JPWO2023063278A1 (https=
JPWO2023063278A5 (https=
Inventor
一平 久保埜
和徳 萩本
康 水澤
達夫 阿部
寿樹 松原
温 鈴木
剛 大槻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023532641A 2021-10-15 2022-10-11 窒化物半導体基板の製造方法 Active JP7533794B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021169906 2021-10-15
JP2021169906 2021-10-15
PCT/JP2022/037756 WO2023063278A1 (ja) 2021-10-15 2022-10-11 窒化物半導体基板及びその製造方法

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JPWO2023063278A1 JPWO2023063278A1 (https=) 2023-04-20
JPWO2023063278A5 JPWO2023063278A5 (https=) 2023-09-21
JP7533794B2 true JP7533794B2 (ja) 2024-08-14

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JP2023532641A Active JP7533794B2 (ja) 2021-10-15 2022-10-11 窒化物半導体基板の製造方法

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JP (1) JP7533794B2 (https=)
TW (1) TW202331817A (https=)
WO (1) WO2023063278A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12454768B1 (en) * 2024-11-08 2025-10-28 Wolfspeed, Inc. Hybrid seed structure for crystal growth system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005203666A (ja) 2004-01-19 2005-07-28 Kansai Electric Power Co Inc:The 化合物半導体デバイスの製造方法
JP2007087992A (ja) 2005-09-20 2007-04-05 Showa Denko Kk 半導体素子および半導体素子製造方法
US20110147772A1 (en) 2009-12-16 2011-06-23 Micron Technology, Inc. Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods
JP2019523994A (ja) 2016-06-14 2019-08-29 クロミス，インコーポレイテッド 電力およびｒｆ用途用の設計された基板構造
JP2020184616A (ja) 2019-05-03 2020-11-12 世界先進積體電路股▲ふん▼有限公司 基板およびその形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831419B2 (ja) * 1990-12-25 1996-03-27 名古屋大学長 単結晶珪素基板上への化合物半導体単結晶の作製方法
JP2006222402A (ja) * 2005-02-14 2006-08-24 Toshiba Ceramics Co Ltd 窒化ガリウム系化合物半導体および製造方法
JP5817127B2 (ja) * 2011-01-21 2015-11-18 株式会社Sumco 半導体基板及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005203666A (ja) 2004-01-19 2005-07-28 Kansai Electric Power Co Inc:The 化合物半導体デバイスの製造方法
JP2007087992A (ja) 2005-09-20 2007-04-05 Showa Denko Kk 半導体素子および半導体素子製造方法
US20110147772A1 (en) 2009-12-16 2011-06-23 Micron Technology, Inc. Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods
JP2019523994A (ja) 2016-06-14 2019-08-29 クロミス，インコーポレイテッド 電力およびｒｆ用途用の設計された基板構造
JP2020184616A (ja) 2019-05-03 2020-11-12 世界先進積體電路股▲ふん▼有限公司 基板およびその形成方法

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JPWO2023063278A1 (https=) 2023-04-20
TW202331817A (zh) 2023-08-01
WO2023063278A1 (ja) 2023-04-20

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