JPWO2023063278A1 - - Google Patents
Info
- Publication number
- JPWO2023063278A1 JPWO2023063278A1 JP2023532641A JP2023532641A JPWO2023063278A1 JP WO2023063278 A1 JPWO2023063278 A1 JP WO2023063278A1 JP 2023532641 A JP2023532641 A JP 2023532641A JP 2023532641 A JP2023532641 A JP 2023532641A JP WO2023063278 A1 JPWO2023063278 A1 JP WO2023063278A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021169906 | 2021-10-15 | ||
| JP2021169906 | 2021-10-15 | ||
| PCT/JP2022/037756 WO2023063278A1 (ja) | 2021-10-15 | 2022-10-11 | 窒化物半導体基板及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023063278A1 true JPWO2023063278A1 (https=) | 2023-04-20 |
| JPWO2023063278A5 JPWO2023063278A5 (https=) | 2023-09-21 |
| JP7533794B2 JP7533794B2 (ja) | 2024-08-14 |
Family
ID=85987755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023532641A Active JP7533794B2 (ja) | 2021-10-15 | 2022-10-11 | 窒化物半導体基板の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7533794B2 (https=) |
| TW (1) | TW202331817A (https=) |
| WO (1) | WO2023063278A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12454768B1 (en) * | 2024-11-08 | 2025-10-28 | Wolfspeed, Inc. | Hybrid seed structure for crystal growth system |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04223330A (ja) * | 1990-12-25 | 1992-08-13 | Univ Nagoya | 単結晶珪素基板上への化合物半導体単結晶の作製方法 |
| JP2005203666A (ja) * | 2004-01-19 | 2005-07-28 | Kansai Electric Power Co Inc:The | 化合物半導体デバイスの製造方法 |
| JP2006222402A (ja) * | 2005-02-14 | 2006-08-24 | Toshiba Ceramics Co Ltd | 窒化ガリウム系化合物半導体および製造方法 |
| JP2007087992A (ja) * | 2005-09-20 | 2007-04-05 | Showa Denko Kk | 半導体素子および半導体素子製造方法 |
| US20110147772A1 (en) * | 2009-12-16 | 2011-06-23 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
| JP2012151401A (ja) * | 2011-01-21 | 2012-08-09 | Sumco Corp | 半導体基板及びその製造方法 |
| JP2019523994A (ja) * | 2016-06-14 | 2019-08-29 | クロミス，インコーポレイテッド | 電力およびｒｆ用途用の設計された基板構造 |
| JP2020184616A (ja) * | 2019-05-03 | 2020-11-12 | 世界先進積體電路股▲ふん▼有限公司 | 基板およびその形成方法 |
-
2022
- 2022-10-11 JP JP2023532641A patent/JP7533794B2/ja active Active
- 2022-10-11 WO PCT/JP2022/037756 patent/WO2023063278A1/ja not_active Ceased
- 2022-10-12 TW TW111138581A patent/TW202331817A/zh unknown
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04223330A (ja) * | 1990-12-25 | 1992-08-13 | Univ Nagoya | 単結晶珪素基板上への化合物半導体単結晶の作製方法 |
| JP2005203666A (ja) * | 2004-01-19 | 2005-07-28 | Kansai Electric Power Co Inc:The | 化合物半導体デバイスの製造方法 |
| JP2006222402A (ja) * | 2005-02-14 | 2006-08-24 | Toshiba Ceramics Co Ltd | 窒化ガリウム系化合物半導体および製造方法 |
| JP2007087992A (ja) * | 2005-09-20 | 2007-04-05 | Showa Denko Kk | 半導体素子および半導体素子製造方法 |
| US20110147772A1 (en) * | 2009-12-16 | 2011-06-23 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
| JP2012151401A (ja) * | 2011-01-21 | 2012-08-09 | Sumco Corp | 半導体基板及びその製造方法 |
| JP2019523994A (ja) * | 2016-06-14 | 2019-08-29 | クロミス，インコーポレイテッド | 電力およびｒｆ用途用の設計された基板構造 |
| JP2020184616A (ja) * | 2019-05-03 | 2020-11-12 | 世界先進積體電路股▲ふん▼有限公司 | 基板およびその形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202331817A (zh) | 2023-08-01 |
| JP7533794B2 (ja) | 2024-08-14 |
| WO2023063278A1 (ja) | 2023-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| BR112023012656A2 (https=) | ||
| CL2026000307A1 (es) | Conjugado de anticuerpo bispecífico-fármaco de camptotecina y uso farmacéutico de este. | |
| CL2025004088A1 (es) | Anticuerpos y fragmentos de unión al antígeno anti-glicoproteína de la espícula de sars-cov-2. | |
| BR112023011738A2 (https=) | ||
| BR102021018859A2 (https=) | ||
| BR102021015500A2 (https=) | ||
| BR102021007058A2 (https=) | ||
| BR102020022030A2 (https=) | ||
| BR112023016292A2 (https=) | ||
| BR112023011610A2 (https=) | ||
| BR102021020147A2 (https=) | ||
| BR102021018926A2 (https=) | ||
| BR102021018167A2 (https=) | ||
| BR102021017576A2 (https=) | ||
| BR102021016837A2 (https=) | ||
| BR102021016551A2 (https=) | ||
| BR102021016375A2 (https=) | ||
| BR102021016200A2 (https=) | ||
| BR102021016176A2 (https=) | ||
| BR102021015566A2 (https=) | ||
| BR102021015450A8 (https=) | ||
| BR102021015247A2 (https=) | ||
| BR102021014056A2 (https=) | ||
| BR102021014044A2 (https=) | ||
| BR102021013929A2 (https=) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230529 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230529 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20230529 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230711 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230901 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20231205 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240301 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20240312 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240702 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240715 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7533794 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |