JPWO2023063046A1 - - Google Patents
Info
- Publication number
- JPWO2023063046A1 JPWO2023063046A1 JP2023532640A JP2023532640A JPWO2023063046A1 JP WO2023063046 A1 JPWO2023063046 A1 JP WO2023063046A1 JP 2023532640 A JP2023532640 A JP 2023532640A JP 2023532640 A JP2023532640 A JP 2023532640A JP WO2023063046 A1 JPWO2023063046 A1 JP WO2023063046A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
Landscapes
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021169808 | 2021-10-15 | ||
| JP2021169808 | 2021-10-15 | ||
| PCT/JP2022/035314 WO2023063046A1 (ja) | 2021-10-15 | 2022-09-22 | 窒化物半導体基板及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023063046A1 true JPWO2023063046A1 (https=) | 2023-04-20 |
| JPWO2023063046A5 JPWO2023063046A5 (https=) | 2023-09-21 |
| JP7533793B2 JP7533793B2 (ja) | 2024-08-14 |
Family
ID=85987682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023532640A Active JP7533793B2 (ja) | 2021-10-15 | 2022-09-22 | 窒化物半導体基板及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7533793B2 (https=) |
| TW (1) | TW202336831A (https=) |
| WO (1) | WO2023063046A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2025156774A (ja) * | 2024-04-02 | 2025-10-15 | 信越半導体株式会社 | 高周波用ｓｏｉウェーハの製造方法 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04223330A (ja) * | 1990-12-25 | 1992-08-13 | Univ Nagoya | 単結晶珪素基板上への化合物半導体単結晶の作製方法 |
| JP2005203666A (ja) * | 2004-01-19 | 2005-07-28 | Kansai Electric Power Co Inc:The | 化合物半導体デバイスの製造方法 |
| JP2006196713A (ja) * | 2005-01-13 | 2006-07-27 | National Institute Of Advanced Industrial & Technology | 半導体装置及びその作製方法並びに重水素処理装置 |
| JP2012151401A (ja) * | 2011-01-21 | 2012-08-09 | Sumco Corp | 半導体基板及びその製造方法 |
| JP2013080776A (ja) * | 2011-10-03 | 2013-05-02 | Covalent Materials Corp | 窒化物半導体基板 |
| JP2014229872A (ja) * | 2013-05-27 | 2014-12-08 | シャープ株式会社 | 窒化物半導体エピタキシャルウェハ |
| JP2019523994A (ja) * | 2016-06-14 | 2019-08-29 | クロミス，インコーポレイテッド | 電力およびｒｆ用途用の設計された基板構造 |
| JP2020184616A (ja) * | 2019-05-03 | 2020-11-12 | 世界先進積體電路股▲ふん▼有限公司 | 基板およびその形成方法 |
| WO2022181163A1 (ja) * | 2021-02-26 | 2022-09-01 | 信越半導体株式会社 | 窒化物半導体基板およびその製造方法 |
-
2022
- 2022-09-22 WO PCT/JP2022/035314 patent/WO2023063046A1/ja not_active Ceased
- 2022-09-22 JP JP2023532640A patent/JP7533793B2/ja active Active
- 2022-09-26 TW TW111136276A patent/TW202336831A/zh unknown
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04223330A (ja) * | 1990-12-25 | 1992-08-13 | Univ Nagoya | 単結晶珪素基板上への化合物半導体単結晶の作製方法 |
| JP2005203666A (ja) * | 2004-01-19 | 2005-07-28 | Kansai Electric Power Co Inc:The | 化合物半導体デバイスの製造方法 |
| JP2006196713A (ja) * | 2005-01-13 | 2006-07-27 | National Institute Of Advanced Industrial & Technology | 半導体装置及びその作製方法並びに重水素処理装置 |
| JP2012151401A (ja) * | 2011-01-21 | 2012-08-09 | Sumco Corp | 半導体基板及びその製造方法 |
| JP2013080776A (ja) * | 2011-10-03 | 2013-05-02 | Covalent Materials Corp | 窒化物半導体基板 |
| JP2014229872A (ja) * | 2013-05-27 | 2014-12-08 | シャープ株式会社 | 窒化物半導体エピタキシャルウェハ |
| JP2019523994A (ja) * | 2016-06-14 | 2019-08-29 | クロミス，インコーポレイテッド | 電力およびｒｆ用途用の設計された基板構造 |
| JP2020184616A (ja) * | 2019-05-03 | 2020-11-12 | 世界先進積體電路股▲ふん▼有限公司 | 基板およびその形成方法 |
| WO2022181163A1 (ja) * | 2021-02-26 | 2022-09-01 | 信越半導体株式会社 | 窒化物半導体基板およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023063046A1 (ja) | 2023-04-20 |
| TW202336831A (zh) | 2023-09-16 |
| JP7533793B2 (ja) | 2024-08-14 |
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