JP7533793B2 - 窒化物半導体基板及びその製造方法 - Google Patents

窒化物半導体基板及びその製造方法 Download PDF

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Publication number
JP7533793B2
JP7533793B2 JP2023532640A JP2023532640A JP7533793B2 JP 7533793 B2 JP7533793 B2 JP 7533793B2 JP 2023532640 A JP2023532640 A JP 2023532640A JP 2023532640 A JP2023532640 A JP 2023532640A JP 7533793 B2 JP7533793 B2 JP 7533793B2
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layer
substrate
single crystal
crystal silicon
nitride semiconductor
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Japanese (ja)
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JPWO2023063046A5 (https=
JPWO2023063046A1 (https=
Inventor
一平 久保埜
和徳 萩本
康 水澤
達夫 阿部
寿樹 松原
温 鈴木
剛 大槻
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials

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  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023532640A 2021-10-15 2022-09-22 窒化物半導体基板及びその製造方法 Active JP7533793B2 (ja)

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JP2021169808 2021-10-15
JP2021169808 2021-10-15
PCT/JP2022/035314 WO2023063046A1 (ja) 2021-10-15 2022-09-22 窒化物半導体基板及びその製造方法

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JPWO2023063046A1 JPWO2023063046A1 (https=) 2023-04-20
JPWO2023063046A5 JPWO2023063046A5 (https=) 2023-09-21
JP7533793B2 true JP7533793B2 (ja) 2024-08-14

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TW (1) TW202336831A (https=)
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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025156774A (ja) * 2024-04-02 2025-10-15 信越半導体株式会社 高周波用ｓｏｉウェーハの製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005203666A (ja) 2004-01-19 2005-07-28 Kansai Electric Power Co Inc:The 化合物半導体デバイスの製造方法
JP2006196713A (ja) 2005-01-13 2006-07-27 National Institute Of Advanced Industrial & Technology 半導体装置及びその作製方法並びに重水素処理装置
JP2012151401A (ja) 2011-01-21 2012-08-09 Sumco Corp 半導体基板及びその製造方法
JP2013080776A (ja) 2011-10-03 2013-05-02 Covalent Materials Corp 窒化物半導体基板
JP2014229872A (ja) 2013-05-27 2014-12-08 シャープ株式会社 窒化物半導体エピタキシャルウェハ
JP2019523994A (ja) 2016-06-14 2019-08-29 クロミス，インコーポレイテッド 電力およびｒｆ用途用の設計された基板構造
JP2020184616A (ja) 2019-05-03 2020-11-12 世界先進積體電路股▲ふん▼有限公司 基板およびその形成方法
WO2022181163A1 (ja) 2021-02-26 2022-09-01 信越半導体株式会社 窒化物半導体基板およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831419B2 (ja) * 1990-12-25 1996-03-27 名古屋大学長 単結晶珪素基板上への化合物半導体単結晶の作製方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005203666A (ja) 2004-01-19 2005-07-28 Kansai Electric Power Co Inc:The 化合物半導体デバイスの製造方法
JP2006196713A (ja) 2005-01-13 2006-07-27 National Institute Of Advanced Industrial & Technology 半導体装置及びその作製方法並びに重水素処理装置
JP2012151401A (ja) 2011-01-21 2012-08-09 Sumco Corp 半導体基板及びその製造方法
JP2013080776A (ja) 2011-10-03 2013-05-02 Covalent Materials Corp 窒化物半導体基板
JP2014229872A (ja) 2013-05-27 2014-12-08 シャープ株式会社 窒化物半導体エピタキシャルウェハ
JP2019523994A (ja) 2016-06-14 2019-08-29 クロミス，インコーポレイテッド 電力およびｒｆ用途用の設計された基板構造
JP2020184616A (ja) 2019-05-03 2020-11-12 世界先進積體電路股▲ふん▼有限公司 基板およびその形成方法
WO2022181163A1 (ja) 2021-02-26 2022-09-01 信越半導体株式会社 窒化物半導体基板およびその製造方法

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TW202336831A (zh) 2023-09-16
JPWO2023063046A1 (https=) 2023-04-20

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