JP2024541052A5 - - Google Patents
Info
- Publication number
- JP2024541052A5 JP2024541052A5 JP2024525953A JP2024525953A JP2024541052A5 JP 2024541052 A5 JP2024541052 A5 JP 2024541052A5 JP 2024525953 A JP2024525953 A JP 2024525953A JP 2024525953 A JP2024525953 A JP 2024525953A JP 2024541052 A5 JP2024541052 A5 JP 2024541052A5
- Authority
- JP
- Japan
- Prior art keywords
- process according
- dielectric layer
- charge trap
- period
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2111876 | 2021-11-09 | ||
| FR2111876A FR3129029B1 (fr) | 2021-11-09 | 2021-11-09 | Procede de preparation d’un substrat support muni d’une couche de piegeage de charges |
| PCT/FR2022/051974 WO2023084168A1 (fr) | 2021-11-09 | 2022-10-19 | Procede de preparation d'un substrat support muni d'une couche de piegeage de charges |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024541052A JP2024541052A (ja) | 2024-11-06 |
| JP2024541052A5 true JP2024541052A5 (https=) | 2025-08-28 |
Family
ID=80786168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024525953A Pending JP2024541052A (ja) | 2021-11-09 | 2022-10-19 | 電荷トラップ層が設けられた支持基板を用意するための方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20240387243A1 (https=) |
| EP (1) | EP4430653B1 (https=) |
| JP (1) | JP2024541052A (https=) |
| KR (1) | KR20240091354A (https=) |
| CN (1) | CN117999634A (https=) |
| FR (1) | FR3129029B1 (https=) |
| TW (1) | TW202329362A (https=) |
| WO (1) | WO2023084168A1 (https=) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1087041B1 (en) | 1999-03-16 | 2009-01-07 | Shin-Etsu Handotai Co., Ltd | Production method for silicon wafer and silicon wafer |
| FR2838865B1 (fr) | 2002-04-23 | 2005-10-14 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat avec couche utile sur support de resistivite elevee |
| FR2860341B1 (fr) | 2003-09-26 | 2005-12-30 | Soitec Silicon On Insulator | Procede de fabrication de structure multicouche a pertes diminuees |
| FR2933233B1 (fr) | 2008-06-30 | 2010-11-26 | Soitec Silicon On Insulator | Substrat de haute resistivite bon marche et procede de fabrication associe |
| FR2953640B1 (fr) | 2009-12-04 | 2012-02-10 | S O I Tec Silicon On Insulator Tech | Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante |
| FR2973159B1 (fr) | 2011-03-22 | 2013-04-19 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat de base |
| FR2985812B1 (fr) | 2012-01-16 | 2014-02-07 | Soitec Silicon On Insulator | Procede et dispositif de test de substrats semi-conducteurs pour applications radiofrequences |
| US9768056B2 (en) | 2013-10-31 | 2017-09-19 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition |
| JP6100200B2 (ja) | 2014-04-24 | 2017-03-22 | 信越半導体株式会社 | 貼り合わせｓｏｉウェーハの製造方法 |
| JP6353814B2 (ja) * | 2015-06-09 | 2018-07-04 | 信越半導体株式会社 | 貼り合わせｓｏｉウェーハの製造方法 |
| WO2020008116A1 (fr) | 2018-07-05 | 2020-01-09 | Soitec | Substrat pour un dispositif integre radioafrequence et son procede de fabrication |
-
2021
- 2021-11-09 FR FR2111876A patent/FR3129029B1/fr active Active
-
2022
- 2022-10-19 EP EP22835457.7A patent/EP4430653B1/fr active Active
- 2022-10-19 CN CN202280064300.9A patent/CN117999634A/zh active Pending
- 2022-10-19 KR KR1020247018657A patent/KR20240091354A/ko active Pending
- 2022-10-19 WO PCT/FR2022/051974 patent/WO2023084168A1/fr not_active Ceased
- 2022-10-19 US US18/688,606 patent/US20240387243A1/en active Pending
- 2022-10-19 JP JP2024525953A patent/JP2024541052A/ja active Pending
- 2022-11-09 TW TW111142742A patent/TW202329362A/zh unknown
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