FR2985812B1 - Procede et dispositif de test de substrats semi-conducteurs pour applications radiofrequences - Google Patents

Procede et dispositif de test de substrats semi-conducteurs pour applications radiofrequences

Info

Publication number
FR2985812B1
FR2985812B1 FR1250396A FR1250396A FR2985812B1 FR 2985812 B1 FR2985812 B1 FR 2985812B1 FR 1250396 A FR1250396 A FR 1250396A FR 1250396 A FR1250396 A FR 1250396A FR 2985812 B1 FR2985812 B1 FR 2985812B1
Authority
FR
France
Prior art keywords
radio frequency
semiconductor substrates
frequency applications
testing semiconductor
testing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1250396A
Other languages
English (en)
Other versions
FR2985812A1 (fr
Inventor
Frederic Allibert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1250396A priority Critical patent/FR2985812B1/fr
Priority to JP2014551689A priority patent/JP6026558B2/ja
Priority to CN201380005587.9A priority patent/CN104204786B/zh
Priority to PCT/IB2013/000044 priority patent/WO2013108107A1/fr
Priority to US14/372,192 priority patent/US20150168326A1/en
Publication of FR2985812A1 publication Critical patent/FR2985812A1/fr
Application granted granted Critical
Publication of FR2985812B1 publication Critical patent/FR2985812B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electrochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
FR1250396A 2012-01-16 2012-01-16 Procede et dispositif de test de substrats semi-conducteurs pour applications radiofrequences Active FR2985812B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1250396A FR2985812B1 (fr) 2012-01-16 2012-01-16 Procede et dispositif de test de substrats semi-conducteurs pour applications radiofrequences
JP2014551689A JP6026558B2 (ja) 2012-01-16 2013-01-15 高周波アプリケーション用半導体基板の試験方法及び試験デバイス
CN201380005587.9A CN104204786B (zh) 2012-01-16 2013-01-15 检测用于射频应用的半导体基板的方法和装置
PCT/IB2013/000044 WO2013108107A1 (fr) 2012-01-16 2013-01-15 Procédé et dispositif de test de substrats à semi-conducteurs pour une application de radiofréquence
US14/372,192 US20150168326A1 (en) 2012-01-16 2013-01-15 Method and device for testing semiconductor subtrates for radiofrequency application

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1250396A FR2985812B1 (fr) 2012-01-16 2012-01-16 Procede et dispositif de test de substrats semi-conducteurs pour applications radiofrequences

Publications (2)

Publication Number Publication Date
FR2985812A1 FR2985812A1 (fr) 2013-07-19
FR2985812B1 true FR2985812B1 (fr) 2014-02-07

Family

ID=47630450

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1250396A Active FR2985812B1 (fr) 2012-01-16 2012-01-16 Procede et dispositif de test de substrats semi-conducteurs pour applications radiofrequences

Country Status (5)

Country Link
US (1) US20150168326A1 (fr)
JP (1) JP6026558B2 (fr)
CN (1) CN104204786B (fr)
FR (1) FR2985812B1 (fr)
WO (1) WO2013108107A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3032038B1 (fr) * 2015-01-27 2018-07-27 Soitec Procede, dispositif et systeme de mesure d'une caracteristique electrique d'un substrat
CN106980046A (zh) * 2016-01-15 2017-07-25 无锡华润上华半导体有限公司 一种半导体材料的电阻率的测试方法
FR3062238A1 (fr) 2017-01-26 2018-07-27 Soitec Support pour une structure semi-conductrice
FR3098342B1 (fr) 2019-07-02 2021-06-04 Soitec Silicon On Insulator structure semi-conductrice comprenant une couche poreuse enterrée, pour applications RF
FR3098642B1 (fr) 2019-07-12 2021-06-11 Soitec Silicon On Insulator procédé de fabrication d'une structure comprenant une couche mince reportée sur un support muni d’une couche de piégeage de charges
FR3119046B1 (fr) 2021-01-15 2022-12-23 Applied Materials Inc Substrat support en silicium adapte aux applications radiofrequences et procede de fabrication associe
JP2023019611A (ja) * 2021-07-29 2023-02-09 信越半導体株式会社 半導体デバイス用基板及びその製造方法
FR3129029B1 (fr) 2021-11-09 2023-09-29 Soitec Silicon On Insulator Procede de preparation d’un substrat support muni d’une couche de piegeage de charges
FR3129028B1 (fr) 2021-11-09 2023-11-10 Soitec Silicon On Insulator Procede de preparation d’un substrat support muni d’une couche de piegeage de charges
US11841296B2 (en) * 2021-12-02 2023-12-12 Globalfoundries U.S. Inc. Semiconductor substrates for electrical resistivity measurements
JP2023122671A (ja) 2022-02-24 2023-09-05 信越半導体株式会社 高周波デバイス用基板、及びその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660250A (en) * 1967-12-22 1972-05-02 Ibm Method of determining impurity profile of a semiconductor body
US3487301A (en) * 1968-03-04 1969-12-30 Ibm Measurement of semiconductor resistivity profiles by measuring voltages,calculating apparent resistivities and applying correction factors
JPH071780B2 (ja) * 1988-11-25 1995-01-11 信越半導体株式会社 エピタキシャルウエーハの遷移領域の評価方法
JPH0493045A (ja) * 1990-08-08 1992-03-25 Seiko Epson Corp 拡がり抵抗測定装置
US5217907A (en) * 1992-01-28 1993-06-08 National Semiconductor Corporation Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction
US5347226A (en) * 1992-11-16 1994-09-13 National Semiconductor Corporation Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction
US5710052A (en) * 1995-10-17 1998-01-20 Advanced Micro Devices, Inc. Scanning spreading resistance probe
US6052653A (en) * 1997-07-11 2000-04-18 Solid State Measurements, Inc. Spreading resistance profiling system
JP4821948B2 (ja) * 2004-12-07 2011-11-24 信越半導体株式会社 Ｓｏｉ層の拡がり抵抗測定方法およびｓｏｉチップ
JP2009174951A (ja) * 2008-01-23 2009-08-06 Oki Electric Ind Co Ltd 誘電正接評価方法
CN102183717B (zh) * 2010-12-29 2013-05-29 淄博盛康电气有限公司 四针压敏电阻测试仪及其分级测试方法

Also Published As

Publication number Publication date
WO2013108107A1 (fr) 2013-07-25
JP6026558B2 (ja) 2016-11-16
CN104204786B (zh) 2017-03-01
JP2015503853A (ja) 2015-02-02
US20150168326A1 (en) 2015-06-18
CN104204786A (zh) 2014-12-10
FR2985812A1 (fr) 2013-07-19

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