JP2024520171A5 - - Google Patents
Info
- Publication number
- JP2024520171A5 JP2024520171A5 JP2023575484A JP2023575484A JP2024520171A5 JP 2024520171 A5 JP2024520171 A5 JP 2024520171A5 JP 2023575484 A JP2023575484 A JP 2023575484A JP 2023575484 A JP2023575484 A JP 2023575484A JP 2024520171 A5 JP2024520171 A5 JP 2024520171A5
- Authority
- JP
- Japan
- Prior art keywords
- molten
- silicon
- weir
- plates
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163197726P | 2021-06-07 | 2021-06-07 | |
| US63/197,726 | 2021-06-07 | ||
| PCT/EP2022/065434 WO2022258634A1 (en) | 2021-06-07 | 2022-06-07 | Use of quartz plates during growth of single crystal silicon ingots |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024520171A JP2024520171A (ja) | 2024-05-21 |
| JP2024520171A5 true JP2024520171A5 (https=) | 2025-06-05 |
| JP7825644B2 JP7825644B2 (ja) | 2026-03-06 |
Family
ID=82196672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023575484A Active JP7825644B2 (ja) | 2021-06-07 | 2022-06-07 | 単結晶シリコンインゴットの成長中の石英プレートの使用 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12146236B2 (https=) |
| EP (1) | EP4352283B1 (https=) |
| JP (1) | JP7825644B2 (https=) |
| KR (1) | KR20240018581A (https=) |
| CN (1) | CN117616160A (https=) |
| TW (1) | TWI912531B (https=) |
| WO (1) | WO2022258634A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12410538B2 (en) | 2021-11-08 | 2025-09-09 | Globalwafers Co., Ltd. | Use of arrays of quartz particles during single crystal silicon ingot production |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU661966A1 (ru) * | 1976-11-23 | 1980-04-05 | Всесоюзный Научно-Исследовательский Институт Монокристаллов И Особо Чистых Химических Веществ "Вниимонокристалл" | Устройство дл выт гивани монокристаллов из расплава |
| JPS59141578U (ja) | 1983-03-09 | 1984-09-21 | 株式会社日立製作所 | 単結晶引上装置 |
| JPS61146788A (ja) * | 1984-12-20 | 1986-07-04 | Fujitsu Ltd | 単結晶成長法 |
| JPH0825833B2 (ja) * | 1990-04-27 | 1996-03-13 | 東芝セラミックス株式会社 | シリコン単結晶の製造方法 |
| JPH0724976U (ja) * | 1993-10-22 | 1995-05-12 | 川崎製鉄株式会社 | シリコン単結晶製造装置 |
| JP3769800B2 (ja) * | 1996-01-12 | 2006-04-26 | 株式会社Ｓｕｍｃｏ | 単結晶引上装置 |
| US7635414B2 (en) | 2003-11-03 | 2009-12-22 | Solaicx, Inc. | System for continuous growing of monocrystalline silicon |
| WO2016179022A1 (en) * | 2015-05-01 | 2016-11-10 | Sunedison, Inc. | Methods for producing single crystal ingots doped with volatile dopants |
| US20180291524A1 (en) * | 2015-05-01 | 2018-10-11 | Corner Star Limited | Methods for producing single crystal ingots doped with volatile dopants |
| CN108350600A (zh) * | 2015-11-18 | 2018-07-31 | 各星有限公司 | 将从单晶锭切割的单晶段再循环的方法 |
| KR20170081499A (ko) * | 2016-01-04 | 2017-07-12 | 주식회사 엘지실트론 | 단결정 잉곳 성장장치 및 이에 적용된 진동 방지판 |
| US10221500B2 (en) | 2017-01-04 | 2019-03-05 | Corner Star Limited | System for forming an ingot including crucible and conditioning members |
| US10407797B2 (en) | 2017-05-04 | 2019-09-10 | Corner Start Limited | Crystal pulling system and method including crucible and barrier |
| WO2022103416A1 (en) | 2020-11-11 | 2022-05-19 | Globalwafers Co., Ltd. | Methods for forming a single crystal silicon ingot with reduced crucible erosion |
| US11499245B2 (en) | 2020-12-30 | 2022-11-15 | Globalwafers Co., Ltd. | Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems |
| US11767610B2 (en) | 2020-12-31 | 2023-09-26 | Globalwafers Co., Ltd. | Use of buffer members during growth of single crystal silicon ingots |
-
2022
- 2022-06-02 US US17/831,271 patent/US12146236B2/en active Active
- 2022-06-07 CN CN202280047678.8A patent/CN117616160A/zh active Pending
- 2022-06-07 JP JP2023575484A patent/JP7825644B2/ja active Active
- 2022-06-07 WO PCT/EP2022/065434 patent/WO2022258634A1/en not_active Ceased
- 2022-06-07 TW TW111121105A patent/TWI912531B/zh active
- 2022-06-07 KR KR1020247000242A patent/KR20240018581A/ko active Pending
- 2022-06-07 EP EP22733347.3A patent/EP4352283B1/en active Active
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