JP2025500603A5 - - Google Patents

Info

Publication number
JP2025500603A5
JP2025500603A5 JP2024540745A JP2024540745A JP2025500603A5 JP 2025500603 A5 JP2025500603 A5 JP 2025500603A5 JP 2024540745 A JP2024540745 A JP 2024540745A JP 2024540745 A JP2024540745 A JP 2024540745A JP 2025500603 A5 JP2025500603 A5 JP 2025500603A5
Authority
JP
Japan
Prior art keywords
silicon
supply tube
ingot
inert gas
flange
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024540745A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025500603A (ja
Filing date
Publication date
Priority claimed from US17/570,146 external-priority patent/US12037698B2/en
Priority claimed from US17/570,141 external-priority patent/US11866845B2/en
Application filed filed Critical
Priority claimed from PCT/EP2023/050146 external-priority patent/WO2023131634A1/en
Publication of JP2025500603A publication Critical patent/JP2025500603A/ja
Publication of JP2025500603A5 publication Critical patent/JP2025500603A5/ja
Pending legal-status Critical Current

Links

JP2024540745A 2022-01-06 2023-01-05 シリコン供給チューブの不活性ガス制御を伴った単結晶シリコンインゴットを成長させる方法 Pending JP2025500603A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US17/570,141 2022-01-06
US17/570,146 2022-01-06
US17/570,146 US12037698B2 (en) 2022-01-06 2022-01-06 Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube
US17/570,141 US11866845B2 (en) 2022-01-06 2022-01-06 Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control
PCT/EP2023/050146 WO2023131634A1 (en) 2022-01-06 2023-01-05 Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control

Publications (2)

Publication Number Publication Date
JP2025500603A JP2025500603A (ja) 2025-01-09
JP2025500603A5 true JP2025500603A5 (https=) 2026-01-08

Family

ID=84982293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024540745A Pending JP2025500603A (ja) 2022-01-06 2023-01-05 シリコン供給チューブの不活性ガス制御を伴った単結晶シリコンインゴットを成長させる方法

Country Status (5)

Country Link
EP (2) EP4534739A3 (https=)
JP (1) JP2025500603A (https=)
KR (1) KR20240129201A (https=)
TW (1) TW202328509A (https=)
WO (1) WO2023131634A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117966255B (zh) * 2024-04-01 2024-06-25 浙江晶盛机电股份有限公司 可消除共振的籽晶系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4341379B2 (ja) * 2003-11-12 2009-10-07 信越半導体株式会社 単結晶の製造方法
JP2005213097A (ja) * 2004-01-30 2005-08-11 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ方法
DE102005006186A1 (de) * 2005-02-10 2006-08-24 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt
JP5437565B2 (ja) * 2007-04-24 2014-03-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶の製造装置
KR100894295B1 (ko) * 2008-02-15 2009-04-24 주식회사 실트론 실리콘 단결정 잉곳 생산장치의 유량제어방법 및 이를이용한 실리콘 단결정 잉곳 생산방법
KR20150106204A (ko) * 2014-03-11 2015-09-21 (주)기술과가치 잉곳 제조 장치
CN207091548U (zh) * 2017-07-27 2018-03-13 隆基绿能科技股份有限公司 一种物料供给装置及晶体生长系统

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