KR20240129201A - 실리콘 공급 튜브 불활성 가스 제어를 수반하는 단결정 실리콘 잉곳들을 성장시키기 위한 방법들 - Google Patents

실리콘 공급 튜브 불활성 가스 제어를 수반하는 단결정 실리콘 잉곳들을 성장시키기 위한 방법들 Download PDF

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Publication number
KR20240129201A
KR20240129201A KR1020247026043A KR20247026043A KR20240129201A KR 20240129201 A KR20240129201 A KR 20240129201A KR 1020247026043 A KR1020247026043 A KR 1020247026043A KR 20247026043 A KR20247026043 A KR 20247026043A KR 20240129201 A KR20240129201 A KR 20240129201A
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KR
South Korea
Prior art keywords
silicon
ingot
inert gas
melt
supply tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247026043A
Other languages
English (en)
Korean (ko)
Inventor
마테오 파노치아
마리아 포리니
Original Assignee
글로벌웨이퍼스 씨오., 엘티디.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/570,146 external-priority patent/US12037698B2/en
Priority claimed from US17/570,141 external-priority patent/US11866845B2/en
Application filed by 글로벌웨이퍼스 씨오., 엘티디. filed Critical 글로벌웨이퍼스 씨오., 엘티디.
Publication of KR20240129201A publication Critical patent/KR20240129201A/ko
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020247026043A 2022-01-06 2023-01-05 실리콘 공급 튜브 불활성 가스 제어를 수반하는 단결정 실리콘 잉곳들을 성장시키기 위한 방법들 Pending KR20240129201A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US17/570,141 2022-01-06
US17/570,146 2022-01-06
US17/570,146 US12037698B2 (en) 2022-01-06 2022-01-06 Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube
US17/570,141 US11866845B2 (en) 2022-01-06 2022-01-06 Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control
PCT/EP2023/050146 WO2023131634A1 (en) 2022-01-06 2023-01-05 Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control

Publications (1)

Publication Number Publication Date
KR20240129201A true KR20240129201A (ko) 2024-08-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247026043A Pending KR20240129201A (ko) 2022-01-06 2023-01-05 실리콘 공급 튜브 불활성 가스 제어를 수반하는 단결정 실리콘 잉곳들을 성장시키기 위한 방법들

Country Status (5)

Country Link
EP (2) EP4534739A3 (https=)
JP (1) JP2025500603A (https=)
KR (1) KR20240129201A (https=)
TW (1) TW202328509A (https=)
WO (1) WO2023131634A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117966255B (zh) * 2024-04-01 2024-06-25 浙江晶盛机电股份有限公司 可消除共振的籽晶系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4341379B2 (ja) * 2003-11-12 2009-10-07 信越半導体株式会社 単結晶の製造方法
JP2005213097A (ja) * 2004-01-30 2005-08-11 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ方法
DE102005006186A1 (de) * 2005-02-10 2006-08-24 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt
JP5437565B2 (ja) * 2007-04-24 2014-03-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶の製造装置
KR100894295B1 (ko) * 2008-02-15 2009-04-24 주식회사 실트론 실리콘 단결정 잉곳 생산장치의 유량제어방법 및 이를이용한 실리콘 단결정 잉곳 생산방법
KR20150106204A (ko) * 2014-03-11 2015-09-21 (주)기술과가치 잉곳 제조 장치
CN207091548U (zh) * 2017-07-27 2018-03-13 隆基绿能科技股份有限公司 一种物料供给装置及晶体生长系统

Also Published As

Publication number Publication date
WO2023131634A8 (en) 2024-08-22
WO2023131634A1 (en) 2023-07-13
EP4460593A1 (en) 2024-11-13
TW202328509A (zh) 2023-07-16
EP4534739A3 (en) 2025-04-16
JP2025500603A (ja) 2025-01-09
EP4534739A2 (en) 2025-04-09

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