JP2025500603A - シリコン供給チューブの不活性ガス制御を伴った単結晶シリコンインゴットを成長させる方法 - Google Patents

シリコン供給チューブの不活性ガス制御を伴った単結晶シリコンインゴットを成長させる方法 Download PDF

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Publication number
JP2025500603A
JP2025500603A JP2024540745A JP2024540745A JP2025500603A JP 2025500603 A JP2025500603 A JP 2025500603A JP 2024540745 A JP2024540745 A JP 2024540745A JP 2024540745 A JP2024540745 A JP 2024540745A JP 2025500603 A JP2025500603 A JP 2025500603A
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JP
Japan
Prior art keywords
silicon
ingot
inert gas
melt
tube
Prior art date
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Pending
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JP2024540745A
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English (en)
Japanese (ja)
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JP2025500603A5 (https=
Inventor
ポッリーニ，マリア
パンノッキア，マッテオ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
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GlobalWafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/570,146 external-priority patent/US12037698B2/en
Priority claimed from US17/570,141 external-priority patent/US11866845B2/en
Application filed by GlobalWafers Co Ltd filed Critical GlobalWafers Co Ltd
Publication of JP2025500603A publication Critical patent/JP2025500603A/ja
Publication of JP2025500603A5 publication Critical patent/JP2025500603A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2024540745A 2022-01-06 2023-01-05 シリコン供給チューブの不活性ガス制御を伴った単結晶シリコンインゴットを成長させる方法 Pending JP2025500603A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US17/570,141 2022-01-06
US17/570,146 2022-01-06
US17/570,146 US12037698B2 (en) 2022-01-06 2022-01-06 Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube
US17/570,141 US11866845B2 (en) 2022-01-06 2022-01-06 Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control
PCT/EP2023/050146 WO2023131634A1 (en) 2022-01-06 2023-01-05 Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control

Publications (2)

Publication Number Publication Date
JP2025500603A true JP2025500603A (ja) 2025-01-09
JP2025500603A5 JP2025500603A5 (https=) 2026-01-08

Family

ID=84982293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024540745A Pending JP2025500603A (ja) 2022-01-06 2023-01-05 シリコン供給チューブの不活性ガス制御を伴った単結晶シリコンインゴットを成長させる方法

Country Status (5)

Country Link
EP (2) EP4534739A3 (https=)
JP (1) JP2025500603A (https=)
KR (1) KR20240129201A (https=)
TW (1) TW202328509A (https=)
WO (1) WO2023131634A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117966255B (zh) * 2024-04-01 2024-06-25 浙江晶盛机电股份有限公司 可消除共振的籽晶系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4341379B2 (ja) * 2003-11-12 2009-10-07 信越半導体株式会社 単結晶の製造方法
JP2005213097A (ja) * 2004-01-30 2005-08-11 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ方法
DE102005006186A1 (de) * 2005-02-10 2006-08-24 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt
JP5437565B2 (ja) * 2007-04-24 2014-03-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶の製造装置
KR100894295B1 (ko) * 2008-02-15 2009-04-24 주식회사 실트론 실리콘 단결정 잉곳 생산장치의 유량제어방법 및 이를이용한 실리콘 단결정 잉곳 생산방법
KR20150106204A (ko) * 2014-03-11 2015-09-21 (주)기술과가치 잉곳 제조 장치
CN207091548U (zh) * 2017-07-27 2018-03-13 隆基绿能科技股份有限公司 一种物料供给装置及晶体生长系统

Also Published As

Publication number Publication date
WO2023131634A8 (en) 2024-08-22
WO2023131634A1 (en) 2023-07-13
EP4460593A1 (en) 2024-11-13
TW202328509A (zh) 2023-07-16
EP4534739A3 (en) 2025-04-16
KR20240129201A (ko) 2024-08-27
EP4534739A2 (en) 2025-04-09

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