TW202328509A - 用於涉及矽進料管之惰性氣體控制之單晶矽錠生長之方法 - Google Patents
用於涉及矽進料管之惰性氣體控制之單晶矽錠生長之方法 Download PDFInfo
- Publication number
- TW202328509A TW202328509A TW112100133A TW112100133A TW202328509A TW 202328509 A TW202328509 A TW 202328509A TW 112100133 A TW112100133 A TW 112100133A TW 112100133 A TW112100133 A TW 112100133A TW 202328509 A TW202328509 A TW 202328509A
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon
- ingot
- inert gas
- melt
- feed tube
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 151
- 239000010703 silicon Substances 0.000 title claims abstract description 151
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 150
- 239000011261 inert gas Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 36
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 21
- 230000012010 growth Effects 0.000 claims abstract description 43
- 239000007789 gas Substances 0.000 claims abstract description 9
- 239000000155 melt Substances 0.000 claims description 39
- 239000013078 crystal Substances 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 230000006641 stabilisation Effects 0.000 claims description 20
- 238000011105 stabilization Methods 0.000 claims description 20
- 230000003698 anagen phase Effects 0.000 claims description 16
- 239000007787 solid Substances 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000012071 phase Substances 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/570,141 | 2022-01-06 | ||
| US17/570,146 | 2022-01-06 | ||
| US17/570,146 US12037698B2 (en) | 2022-01-06 | 2022-01-06 | Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube |
| US17/570,141 US11866845B2 (en) | 2022-01-06 | 2022-01-06 | Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202328509A true TW202328509A (zh) | 2023-07-16 |
Family
ID=84982293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112100133A TW202328509A (zh) | 2022-01-06 | 2023-01-03 | 用於涉及矽進料管之惰性氣體控制之單晶矽錠生長之方法 |
Country Status (5)
| Country | Link |
|---|---|
| EP (2) | EP4534739A3 (https=) |
| JP (1) | JP2025500603A (https=) |
| KR (1) | KR20240129201A (https=) |
| TW (1) | TW202328509A (https=) |
| WO (1) | WO2023131634A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117966255A (zh) * | 2024-04-01 | 2024-05-03 | 浙江晶盛机电股份有限公司 | 可消除共振的籽晶系统 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4341379B2 (ja) * | 2003-11-12 | 2009-10-07 | 信越半導体株式会社 | 単結晶の製造方法 |
| JP2005213097A (ja) * | 2004-01-30 | 2005-08-11 | Sumitomo Mitsubishi Silicon Corp | シリコン単結晶の引上げ方法 |
| DE102005006186A1 (de) * | 2005-02-10 | 2006-08-24 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt |
| JP5437565B2 (ja) * | 2007-04-24 | 2014-03-12 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体単結晶の製造装置 |
| KR100894295B1 (ko) * | 2008-02-15 | 2009-04-24 | 주식회사 실트론 | 실리콘 단결정 잉곳 생산장치의 유량제어방법 및 이를이용한 실리콘 단결정 잉곳 생산방법 |
| KR20150106204A (ko) * | 2014-03-11 | 2015-09-21 | (주)기술과가치 | 잉곳 제조 장치 |
| CN207091548U (zh) * | 2017-07-27 | 2018-03-13 | 隆基绿能科技股份有限公司 | 一种物料供给装置及晶体生长系统 |
-
2023
- 2023-01-03 TW TW112100133A patent/TW202328509A/zh unknown
- 2023-01-05 EP EP25159723.3A patent/EP4534739A3/en active Pending
- 2023-01-05 JP JP2024540745A patent/JP2025500603A/ja active Pending
- 2023-01-05 KR KR1020247026043A patent/KR20240129201A/ko active Pending
- 2023-01-05 EP EP23700590.5A patent/EP4460593A1/en active Pending
- 2023-01-05 WO PCT/EP2023/050146 patent/WO2023131634A1/en not_active Ceased
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117966255A (zh) * | 2024-04-01 | 2024-05-03 | 浙江晶盛机电股份有限公司 | 可消除共振的籽晶系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023131634A8 (en) | 2024-08-22 |
| WO2023131634A1 (en) | 2023-07-13 |
| EP4460593A1 (en) | 2024-11-13 |
| EP4534739A3 (en) | 2025-04-16 |
| KR20240129201A (ko) | 2024-08-27 |
| JP2025500603A (ja) | 2025-01-09 |
| EP4534739A2 (en) | 2025-04-09 |
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