JP7825644B2 - 単結晶シリコンインゴットの成長中の石英プレートの使用 - Google Patents

単結晶シリコンインゴットの成長中の石英プレートの使用

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Publication number
JP7825644B2
JP7825644B2 JP2023575484A JP2023575484A JP7825644B2 JP 7825644 B2 JP7825644 B2 JP 7825644B2 JP 2023575484 A JP2023575484 A JP 2023575484A JP 2023575484 A JP2023575484 A JP 2023575484A JP 7825644 B2 JP7825644 B2 JP 7825644B2
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JP
Japan
Prior art keywords
melt
silicon
plates
weir
ingot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023575484A
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English (en)
Japanese (ja)
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JP2024520171A (ja
JP2024520171A5 (https=
Inventor
パンノッキア，マッテオ
マルケーゼ，フランチェスカ
トージ，パオロ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
Original Assignee
GlobalWafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GlobalWafers Co Ltd filed Critical GlobalWafers Co Ltd
Publication of JP2024520171A publication Critical patent/JP2024520171A/ja
Publication of JP2024520171A5 publication Critical patent/JP2024520171A5/ja
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Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023575484A 2021-06-07 2022-06-07 単結晶シリコンインゴットの成長中の石英プレートの使用 Active JP7825644B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163197726P 2021-06-07 2021-06-07
US63/197,726 2021-06-07
PCT/EP2022/065434 WO2022258634A1 (en) 2021-06-07 2022-06-07 Use of quartz plates during growth of single crystal silicon ingots

Publications (3)

Publication Number Publication Date
JP2024520171A JP2024520171A (ja) 2024-05-21
JP2024520171A5 JP2024520171A5 (https=) 2025-06-05
JP7825644B2 true JP7825644B2 (ja) 2026-03-06

Family

ID=82196672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023575484A Active JP7825644B2 (ja) 2021-06-07 2022-06-07 単結晶シリコンインゴットの成長中の石英プレートの使用

Country Status (7)

Country Link
US (1) US12146236B2 (https=)
EP (1) EP4352283B1 (https=)
JP (1) JP7825644B2 (https=)
KR (1) KR20240018581A (https=)
CN (1) CN117616160A (https=)
TW (1) TWI912531B (https=)
WO (1) WO2022258634A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12410538B2 (en) 2021-11-08 2025-09-09 Globalwafers Co., Ltd. Use of arrays of quartz particles during single crystal silicon ingot production

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180291524A1 (en) 2015-05-01 2018-10-11 Corner Star Limited Methods for producing single crystal ingots doped with volatile dopants
JP2020518542A (ja) 2017-05-04 2020-06-25 コーナー・スター・リミテッドＣｏｒｎｅｒ Ｓｔａｒ Ｌｉｍｉｔｅｄ 坩堝およびバリアを含む結晶引上げシステムならびに結晶引上げ方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU661966A1 (ru) * 1976-11-23 1980-04-05 Всесоюзный Научно-Исследовательский Институт Монокристаллов И Особо Чистых Химических Веществ "Вниимонокристалл" Устройство дл выт гивани монокристаллов из расплава
JPS59141578U (ja) 1983-03-09 1984-09-21 株式会社日立製作所 単結晶引上装置
JPS61146788A (ja) * 1984-12-20 1986-07-04 Fujitsu Ltd 単結晶成長法
JPH0825833B2 (ja) * 1990-04-27 1996-03-13 東芝セラミックス株式会社 シリコン単結晶の製造方法
JPH0724976U (ja) * 1993-10-22 1995-05-12 川崎製鉄株式会社 シリコン単結晶製造装置
JP3769800B2 (ja) * 1996-01-12 2006-04-26 株式会社Ｓｕｍｃｏ 単結晶引上装置
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
WO2016179022A1 (en) * 2015-05-01 2016-11-10 Sunedison, Inc. Methods for producing single crystal ingots doped with volatile dopants
CN108350600A (zh) * 2015-11-18 2018-07-31 各星有限公司 将从单晶锭切割的单晶段再循环的方法
KR20170081499A (ko) * 2016-01-04 2017-07-12 주식회사 엘지실트론 단결정 잉곳 성장장치 및 이에 적용된 진동 방지판
US10221500B2 (en) 2017-01-04 2019-03-05 Corner Star Limited System for forming an ingot including crucible and conditioning members
WO2022103416A1 (en) 2020-11-11 2022-05-19 Globalwafers Co., Ltd. Methods for forming a single crystal silicon ingot with reduced crucible erosion
US11499245B2 (en) 2020-12-30 2022-11-15 Globalwafers Co., Ltd. Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems
US11767610B2 (en) 2020-12-31 2023-09-26 Globalwafers Co., Ltd. Use of buffer members during growth of single crystal silicon ingots

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180291524A1 (en) 2015-05-01 2018-10-11 Corner Star Limited Methods for producing single crystal ingots doped with volatile dopants
JP2020518542A (ja) 2017-05-04 2020-06-25 コーナー・スター・リミテッドＣｏｒｎｅｒ Ｓｔａｒ Ｌｉｍｉｔｅｄ 坩堝およびバリアを含む結晶引上げシステムならびに結晶引上げ方法

Also Published As

Publication number Publication date
WO2022258634A1 (en) 2022-12-15
EP4352283A1 (en) 2024-04-17
JP2024520171A (ja) 2024-05-21
CN117616160A (zh) 2024-02-27
US12146236B2 (en) 2024-11-19
TWI912531B (zh) 2026-01-21
TW202248470A (zh) 2022-12-16
US20220389609A1 (en) 2022-12-08
EP4352283B1 (en) 2025-03-12
KR20240018581A (ko) 2024-02-13

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