KR20240018581A - 단결정 실리콘 잉곳들의 성장 동안의 석영 플레이트들의 사용 - Google Patents

단결정 실리콘 잉곳들의 성장 동안의 석영 플레이트들의 사용 Download PDF

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Publication number
KR20240018581A
KR20240018581A KR1020247000242A KR20247000242A KR20240018581A KR 20240018581 A KR20240018581 A KR 20240018581A KR 1020247000242 A KR1020247000242 A KR 1020247000242A KR 20247000242 A KR20247000242 A KR 20247000242A KR 20240018581 A KR20240018581 A KR 20240018581A
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KR
South Korea
Prior art keywords
melt
plates
silicon
zone
single crystal
Prior art date
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Pending
Application number
KR1020247000242A
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English (en)
Korean (ko)
Inventor
마테오 파노치아
프란체스카 마르케세
파올로 토시
Original Assignee
글로벌웨이퍼스 씨오., 엘티디.
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Application filed by 글로벌웨이퍼스 씨오., 엘티디. filed Critical 글로벌웨이퍼스 씨오., 엘티디.
Publication of KR20240018581A publication Critical patent/KR20240018581A/ko
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020247000242A 2021-06-07 2022-06-07 단결정 실리콘 잉곳들의 성장 동안의 석영 플레이트들의 사용 Pending KR20240018581A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163197726P 2021-06-07 2021-06-07
US63/197,726 2021-06-07
PCT/EP2022/065434 WO2022258634A1 (en) 2021-06-07 2022-06-07 Use of quartz plates during growth of single crystal silicon ingots

Publications (1)

Publication Number Publication Date
KR20240018581A true KR20240018581A (ko) 2024-02-13

Family

ID=82196672

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247000242A Pending KR20240018581A (ko) 2021-06-07 2022-06-07 단결정 실리콘 잉곳들의 성장 동안의 석영 플레이트들의 사용

Country Status (7)

Country Link
US (1) US12146236B2 (https=)
EP (1) EP4352283B1 (https=)
JP (1) JP7825644B2 (https=)
KR (1) KR20240018581A (https=)
CN (1) CN117616160A (https=)
TW (1) TWI912531B (https=)
WO (1) WO2022258634A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12410538B2 (en) 2021-11-08 2025-09-09 Globalwafers Co., Ltd. Use of arrays of quartz particles during single crystal silicon ingot production

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU661966A1 (ru) * 1976-11-23 1980-04-05 Всесоюзный Научно-Исследовательский Институт Монокристаллов И Особо Чистых Химических Веществ "Вниимонокристалл" Устройство дл выт гивани монокристаллов из расплава
JPS59141578U (ja) 1983-03-09 1984-09-21 株式会社日立製作所 単結晶引上装置
JPS61146788A (ja) * 1984-12-20 1986-07-04 Fujitsu Ltd 単結晶成長法
JPH0825833B2 (ja) * 1990-04-27 1996-03-13 東芝セラミックス株式会社 シリコン単結晶の製造方法
JPH0724976U (ja) * 1993-10-22 1995-05-12 川崎製鉄株式会社 シリコン単結晶製造装置
JP3769800B2 (ja) * 1996-01-12 2006-04-26 株式会社Ｓｕｍｃｏ 単結晶引上装置
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
WO2016179022A1 (en) * 2015-05-01 2016-11-10 Sunedison, Inc. Methods for producing single crystal ingots doped with volatile dopants
US20180291524A1 (en) * 2015-05-01 2018-10-11 Corner Star Limited Methods for producing single crystal ingots doped with volatile dopants
CN108350600A (zh) * 2015-11-18 2018-07-31 各星有限公司 将从单晶锭切割的单晶段再循环的方法
KR20170081499A (ko) * 2016-01-04 2017-07-12 주식회사 엘지실트론 단결정 잉곳 성장장치 및 이에 적용된 진동 방지판
US10221500B2 (en) 2017-01-04 2019-03-05 Corner Star Limited System for forming an ingot including crucible and conditioning members
US10407797B2 (en) 2017-05-04 2019-09-10 Corner Start Limited Crystal pulling system and method including crucible and barrier
WO2022103416A1 (en) 2020-11-11 2022-05-19 Globalwafers Co., Ltd. Methods for forming a single crystal silicon ingot with reduced crucible erosion
US11499245B2 (en) 2020-12-30 2022-11-15 Globalwafers Co., Ltd. Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems
US11767610B2 (en) 2020-12-31 2023-09-26 Globalwafers Co., Ltd. Use of buffer members during growth of single crystal silicon ingots

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Publication number Publication date
WO2022258634A1 (en) 2022-12-15
EP4352283A1 (en) 2024-04-17
JP2024520171A (ja) 2024-05-21
CN117616160A (zh) 2024-02-27
US12146236B2 (en) 2024-11-19
TWI912531B (zh) 2026-01-21
TW202248470A (zh) 2022-12-16
US20220389609A1 (en) 2022-12-08
JP7825644B2 (ja) 2026-03-06
EP4352283B1 (en) 2025-03-12

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