JP2024516742A - マイクロエレクトロニクスパッケージアセンブリおよび作製方法 - Google Patents
マイクロエレクトロニクスパッケージアセンブリおよび作製方法 Download PDFInfo
- Publication number
- JP2024516742A JP2024516742A JP2023568590A JP2023568590A JP2024516742A JP 2024516742 A JP2024516742 A JP 2024516742A JP 2023568590 A JP2023568590 A JP 2023568590A JP 2023568590 A JP2023568590 A JP 2023568590A JP 2024516742 A JP2024516742 A JP 2024516742A
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- coating
- flange
- leads
- top surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/461—Leadframes specially adapted for cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/254—Diamond
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/258—Metallic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/04—Manufacture or treatment of leadframes
- H10W70/042—Etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/04—Manufacture or treatment of leadframes
- H10W70/048—Mechanical treatments, e.g. punching, cutting, deforming or cold welding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/421—Shapes or dispositions
- H10W70/435—Shapes or dispositions of insulating layers on leadframes, e.g. bridging members
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/456—Materials
- H10W70/457—Materials of metallic layers on leadframes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/456—Materials
- H10W70/458—Materials of insulating layers on leadframes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/66—Conductive materials thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/10—Containers or parts thereof
- H10W76/12—Containers or parts thereof characterised by their shape
- H10W76/13—Containers comprising a conductive base serving as an interconnection
- H10W76/134—Containers comprising a conductive base serving as an interconnection having other interconnections parallel to the conductive base
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/10—Containers or parts thereof
- H10W76/12—Containers or parts thereof characterised by their shape
- H10W76/15—Containers comprising an insulating or insulated base
- H10W76/157—Containers comprising an insulating or insulated base having interconnections parallel to the insulating or insulated base
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/10—Arrangements for heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
- H10W44/203—Electrical connections
- H10W44/209—Vertical interconnections, e.g. vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
- H10W44/251—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for monolithic microwave integrated circuits [MMIC]
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163185768P | 2021-05-07 | 2021-05-07 | |
| US63/185,768 | 2021-05-07 | ||
| PCT/US2022/027846 WO2022235914A1 (en) | 2021-05-07 | 2022-05-05 | Microelectronics package assemblies and processes for making |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024516742A true JP2024516742A (ja) | 2024-04-16 |
| JPWO2022235914A5 JPWO2022235914A5 (https=) | 2025-05-07 |
| JP2024516742A5 JP2024516742A5 (https=) | 2025-05-07 |
Family
ID=81927461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023568590A Pending JP2024516742A (ja) | 2021-05-07 | 2022-05-05 | マイクロエレクトロニクスパッケージアセンブリおよび作製方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12074099B2 (https=) |
| JP (1) | JP2024516742A (https=) |
| KR (1) | KR102914493B1 (https=) |
| CN (1) | CN117280457A (https=) |
| TW (1) | TW202249583A (https=) |
| WO (1) | WO2022235914A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12224218B2 (en) * | 2022-02-11 | 2025-02-11 | Wolfspeed, Inc. | Semiconductor packages with increased power handling |
| USD1056862S1 (en) | 2022-08-24 | 2025-01-07 | Wolfspeed, Inc. | Semiconductor package |
| GB2635648A (en) * | 2023-10-17 | 2025-05-28 | Trak Microwave Ltd | Radio frequency components and manufacturing of radio-frequency components |
| TWI866712B (zh) * | 2023-12-21 | 2024-12-11 | 矽品精密工業股份有限公司 | 散熱結構及其電子封裝件 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5128555A (https=) * | 1974-09-04 | 1976-03-10 | Nippon Electric Co | |
| JPS58500463A (ja) * | 1981-03-23 | 1983-03-24 | モトロ−ラ・インコ−ポレ−テッド | めっきのしてないパッケ−ジを含む半導体デバイス |
| JP2006196810A (ja) * | 2005-01-17 | 2006-07-27 | Kyocera Corp | セラミック回路基板および電子部品モジュール |
| JP2007165494A (ja) * | 2005-12-13 | 2007-06-28 | Dainippon Printing Co Ltd | センサーパッケージおよびその製造方法 |
| JP2017518640A (ja) * | 2014-05-23 | 2017-07-06 | マテリオン コーポレイション | エアキャビティパッケージ |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG157957A1 (en) * | 2003-01-29 | 2010-01-29 | Interplex Qlp Inc | Package for integrated circuit die |
| US6903013B2 (en) * | 2003-05-16 | 2005-06-07 | Chartered Semiconductor Manufacturing Ltd. | Method to fill a trench and tunnel by using ALD seed layer and electroless plating |
| US7731078B2 (en) * | 2004-11-13 | 2010-06-08 | Stats Chippac Ltd. | Semiconductor system with fine pitch lead fingers |
| US8617926B2 (en) * | 2010-09-09 | 2013-12-31 | Advanced Micro Devices, Inc. | Semiconductor chip device with polymeric filler trench |
| EP2973672B1 (en) | 2013-03-15 | 2018-07-11 | Materion Corporation | Method of spot-welding a die bond sheet preform containing gold and tin to a die bond area on a semiconductor package |
| US10211115B2 (en) | 2014-05-21 | 2019-02-19 | Materion Corporation | Method of making a ceramic combo lid with selective and edge metallizations |
| US9543170B2 (en) * | 2014-08-22 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor packages and methods of forming the same |
| WO2017201260A1 (en) * | 2016-05-20 | 2017-11-23 | Materion Corporation | Copper flanged air cavity packages for high frequency devices |
| US11646255B2 (en) * | 2021-03-18 | 2023-05-09 | Taiwan Semiconductor Manufacturing Company Limited | Chip package structure including a silicon substrate interposer and methods for forming the same |
-
2022
- 2022-05-05 US US17/737,564 patent/US12074099B2/en active Active
- 2022-05-05 WO PCT/US2022/027846 patent/WO2022235914A1/en not_active Ceased
- 2022-05-05 KR KR1020237042365A patent/KR102914493B1/ko active Active
- 2022-05-05 JP JP2023568590A patent/JP2024516742A/ja active Pending
- 2022-05-05 CN CN202280033171.7A patent/CN117280457A/zh active Pending
- 2022-05-09 TW TW111117271A patent/TW202249583A/zh unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5128555A (https=) * | 1974-09-04 | 1976-03-10 | Nippon Electric Co | |
| JPS58500463A (ja) * | 1981-03-23 | 1983-03-24 | モトロ−ラ・インコ−ポレ−テッド | めっきのしてないパッケ−ジを含む半導体デバイス |
| JP2006196810A (ja) * | 2005-01-17 | 2006-07-27 | Kyocera Corp | セラミック回路基板および電子部品モジュール |
| JP2007165494A (ja) * | 2005-12-13 | 2007-06-28 | Dainippon Printing Co Ltd | センサーパッケージおよびその製造方法 |
| JP2017518640A (ja) * | 2014-05-23 | 2017-07-06 | マテリオン コーポレイション | エアキャビティパッケージ |
Also Published As
| Publication number | Publication date |
|---|---|
| US12074099B2 (en) | 2024-08-27 |
| US20220359351A1 (en) | 2022-11-10 |
| WO2022235914A1 (en) | 2022-11-10 |
| KR20240006626A (ko) | 2024-01-15 |
| TW202249583A (zh) | 2022-12-16 |
| CN117280457A (zh) | 2023-12-22 |
| KR102914493B1 (ko) | 2026-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2024516742A (ja) | マイクロエレクトロニクスパッケージアセンブリおよび作製方法 | |
| US7157744B2 (en) | Surface mount package for a high power light emitting diode | |
| US6830780B2 (en) | Methods for preparing brazeable metallizations for diamond components | |
| US20010038140A1 (en) | High rigidity, multi-layered semiconductor package and method of making the same | |
| US6531226B1 (en) | Brazeable metallizations for diamond components | |
| EP4091194A1 (en) | Device carrier configured for interconnects, a package implementing a device carrier having interconnects, and processes of making the same | |
| JPH04144259A (ja) | パワートランジスタ用パッケージ | |
| US20170236769A1 (en) | High thermal conductive hermetic rf packaging | |
| Occhionero et al. | Aluminum silicon carbide (AlSiC) for advanced microelectronic packages | |
| JPH05291425A (ja) | 半導体パッケージおよびその製造方法 | |
| JP2017126648A (ja) | 電子モジュール | |
| JP4336016B2 (ja) | 半導体素子収納用パッケージ | |
| JP2014086581A (ja) | 半導体素子収納用パッケージ | |
| CN106409691A (zh) | 一种封装外壳内腔不同位置的不同厚度金层的制备方法 | |
| US12230614B2 (en) | Multi-typed integrated passive device (IPD) components and devices and processes implementing the same | |
| JP2005252121A (ja) | 半導体素子収納用パッケージ及びその製造方法 | |
| JPH0997865A (ja) | 放熱部品 | |
| JPH02208033A (ja) | 回路基板用セラミックス板 | |
| JPS63289950A (ja) | 半導体用パツケ−ジ | |
| JP3850312B2 (ja) | 半導体素子収納用パッケージおよび半導体装置 | |
| JP3872391B2 (ja) | 半導体素子収納用パッケージ | |
| JPS6286833A (ja) | セラミック接合方法及びセラミックパッケージの製法及びセラミックパッケージ | |
| JPH0465544B2 (https=) | ||
| JPS63122253A (ja) | 半導体パツケ−ジ | |
| JP2000349098A (ja) | セラミック基板と半導体素子の接合体及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250424 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250424 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20250424 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20250723 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20251015 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20260106 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20260406 |