KR102914493B1 - 마이크로일렉트로닉스 패키지 어셈블리 및 제조 공정 - Google Patents

마이크로일렉트로닉스 패키지 어셈블리 및 제조 공정

Info

Publication number
KR102914493B1
KR102914493B1 KR1020237042365A KR20237042365A KR102914493B1 KR 102914493 B1 KR102914493 B1 KR 102914493B1 KR 1020237042365 A KR1020237042365 A KR 1020237042365A KR 20237042365 A KR20237042365 A KR 20237042365A KR 102914493 B1 KR102914493 B1 KR 102914493B1
Authority
KR
South Korea
Prior art keywords
coating
insulator
flange
package assembly
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237042365A
Other languages
English (en)
Korean (ko)
Other versions
KR20240006626A (ko
Inventor
라메쉬 코탄다파니
크리스토퍼 존슨
전웨이 티
레온 노엘 드
신리 탄
Original Assignee
마테리온 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마테리온 코포레이션 filed Critical 마테리온 코포레이션
Publication of KR20240006626A publication Critical patent/KR20240006626A/ko
Application granted granted Critical
Publication of KR102914493B1 publication Critical patent/KR102914493B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/461—Leadframes specially adapted for cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/254—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/042—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/048—Mechanical treatments, e.g. punching, cutting, deforming or cold welding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/435—Shapes or dispositions of insulating layers on leadframes, e.g. bridging members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/457—Materials of metallic layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/458—Materials of insulating layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/134—Containers comprising a conductive base serving as an interconnection having other interconnections parallel to the conductive base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H10W76/157—Containers comprising an insulating or insulated base having interconnections parallel to the insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/209—Vertical interconnections, e.g. vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/251—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for monolithic microwave integrated circuits [MMIC]

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
KR1020237042365A 2021-05-07 2022-05-05 마이크로일렉트로닉스 패키지 어셈블리 및 제조 공정 Active KR102914493B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163185768P 2021-05-07 2021-05-07
US63/185,768 2021-05-07
PCT/US2022/027846 WO2022235914A1 (en) 2021-05-07 2022-05-05 Microelectronics package assemblies and processes for making

Publications (2)

Publication Number Publication Date
KR20240006626A KR20240006626A (ko) 2024-01-15
KR102914493B1 true KR102914493B1 (ko) 2026-01-16

Family

ID=81927461

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237042365A Active KR102914493B1 (ko) 2021-05-07 2022-05-05 마이크로일렉트로닉스 패키지 어셈블리 및 제조 공정

Country Status (6)

Country Link
US (1) US12074099B2 (https=)
JP (1) JP2024516742A (https=)
KR (1) KR102914493B1 (https=)
CN (1) CN117280457A (https=)
TW (1) TW202249583A (https=)
WO (1) WO2022235914A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12224218B2 (en) * 2022-02-11 2025-02-11 Wolfspeed, Inc. Semiconductor packages with increased power handling
USD1056862S1 (en) 2022-08-24 2025-01-07 Wolfspeed, Inc. Semiconductor package
GB2635648A (en) * 2023-10-17 2025-05-28 Trak Microwave Ltd Radio frequency components and manufacturing of radio-frequency components
TWI866712B (zh) * 2023-12-21 2024-12-11 矽品精密工業股份有限公司 散熱結構及其電子封裝件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040229457A1 (en) * 2003-05-16 2004-11-18 Chartered Semiconductor Manufacturing Ltd. Method to fill a trench and tunnel by using ALD seed layer and electroless plating
US20060102694A1 (en) * 2004-11-13 2006-05-18 Stats Chippac Ltd. Semiconductor system with fine pitch lead fingers
WO2017201260A1 (en) * 2016-05-20 2017-11-23 Materion Corporation Copper flanged air cavity packages for high frequency devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819385B2 (ja) * 1974-09-04 1983-04-18 日本電気株式会社 ロウヅケホウホウ
JPS58500463A (ja) * 1981-03-23 1983-03-24 モトロ−ラ・インコ−ポレ−テッド めっきのしてないパッケ−ジを含む半導体デバイス
SG157957A1 (en) * 2003-01-29 2010-01-29 Interplex Qlp Inc Package for integrated circuit die
JP2006196810A (ja) * 2005-01-17 2006-07-27 Kyocera Corp セラミック回路基板および電子部品モジュール
JP4816049B2 (ja) * 2005-12-13 2011-11-16 大日本印刷株式会社 センサーパッケージおよびその製造方法
US8617926B2 (en) * 2010-09-09 2013-12-31 Advanced Micro Devices, Inc. Semiconductor chip device with polymeric filler trench
EP2973672B1 (en) 2013-03-15 2018-07-11 Materion Corporation Method of spot-welding a die bond sheet preform containing gold and tin to a die bond area on a semiconductor package
US10211115B2 (en) 2014-05-21 2019-02-19 Materion Corporation Method of making a ceramic combo lid with selective and edge metallizations
US20170069560A1 (en) 2014-05-23 2017-03-09 Materion Corporation Air cavity package
US9543170B2 (en) * 2014-08-22 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor packages and methods of forming the same
US11646255B2 (en) * 2021-03-18 2023-05-09 Taiwan Semiconductor Manufacturing Company Limited Chip package structure including a silicon substrate interposer and methods for forming the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040229457A1 (en) * 2003-05-16 2004-11-18 Chartered Semiconductor Manufacturing Ltd. Method to fill a trench and tunnel by using ALD seed layer and electroless plating
US20060102694A1 (en) * 2004-11-13 2006-05-18 Stats Chippac Ltd. Semiconductor system with fine pitch lead fingers
WO2017201260A1 (en) * 2016-05-20 2017-11-23 Materion Corporation Copper flanged air cavity packages for high frequency devices

Also Published As

Publication number Publication date
US12074099B2 (en) 2024-08-27
US20220359351A1 (en) 2022-11-10
JP2024516742A (ja) 2024-04-16
WO2022235914A1 (en) 2022-11-10
KR20240006626A (ko) 2024-01-15
TW202249583A (zh) 2022-12-16
CN117280457A (zh) 2023-12-22

Similar Documents

Publication Publication Date Title
KR102914493B1 (ko) 마이크로일렉트로닉스 패키지 어셈블리 및 제조 공정
US7157744B2 (en) Surface mount package for a high power light emitting diode
US11257740B2 (en) Device carrier configured for interconnects, a package implementing a device carrier having interconnects, and processes of making the same
US20010038140A1 (en) High rigidity, multi-layered semiconductor package and method of making the same
EP1430007B1 (en) Brazeable matallizations for diamond components
US5814880A (en) Thick film copper metallization for microwave power transistor packages
US11616040B2 (en) Semiconductor dies having ultra-thin wafer backmetal systems, microelectronic devices containing the same, and associated fabrication methods
JP2970723B2 (ja) 半導体パッケージおよびその製造方法
CN113140465A (zh) 使用银烧结制造的直接接合铜衬底
US12230614B2 (en) Multi-typed integrated passive device (IPD) components and devices and processes implementing the same
JP2017126648A (ja) 電子モジュール
US12402240B2 (en) Silicon carbide thermal bridge integrated on a low thermal conductivity substrate and processes implementing the same
US20220399318A1 (en) Integrated passive device (ipd) components and a package and processes implementing the same
WO2023114961A1 (en) Configurable metal – insulator – metal capacitor and devices and processes implementing the same
JP2509428B2 (ja) 超小型電子パッケ―ジ
JPS6286833A (ja) セラミック接合方法及びセラミックパッケージの製法及びセラミックパッケージ
JP2013016597A (ja) 高放熱型半導体素子収納用基板
JPH03266457A (ja) 半導体装置
JPS63122253A (ja) 半導体パツケ−ジ

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13 Pre-grant limitation requested

Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13 Application amended

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

U12 Designation fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U12-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)