JP2024501237A5 - - Google Patents
Info
- Publication number
- JP2024501237A5 JP2024501237A5 JP2023537636A JP2023537636A JP2024501237A5 JP 2024501237 A5 JP2024501237 A5 JP 2024501237A5 JP 2023537636 A JP2023537636 A JP 2023537636A JP 2023537636 A JP2023537636 A JP 2023537636A JP 2024501237 A5 JP2024501237 A5 JP 2024501237A5
- Authority
- JP
- Japan
- Prior art keywords
- trench
- semiconductor device
- power semiconductor
- layer
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP20216115.4 | 2020-12-21 | ||
| EP20216115.4A EP4016638A1 (en) | 2020-12-21 | 2020-12-21 | Power semiconductor device with an insulated trench gate electrode |
| PCT/EP2021/086590 WO2022136179A1 (en) | 2020-12-21 | 2021-12-17 | Power semiconductor device with an insulated trench gate electrode and method of producing a power semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024501237A JP2024501237A (ja) | 2024-01-11 |
| JP2024501237A5 true JP2024501237A5 (https=) | 2024-12-20 |
Family
ID=73856430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023537636A Pending JP2024501237A (ja) | 2020-12-21 | 2021-12-17 | 絶縁トレンチゲート電極を有するパワー半導体デバイスおよびパワー半導体デバイスを製造する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240038879A1 (https=) |
| EP (1) | EP4016638A1 (https=) |
| JP (1) | JP2024501237A (https=) |
| CN (1) | CN116636012A (https=) |
| DE (1) | DE212021000529U1 (https=) |
| WO (1) | WO2022136179A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4394881B1 (en) * | 2022-12-30 | 2025-07-30 | Hitachi Energy Ltd | Semiconductor device and method for producing a semiconductor device |
| EP4394888A1 (en) * | 2022-12-30 | 2024-07-03 | Hitachi Energy Ltd | Semiconductor device and method for producing a semiconductor device |
| EP4394889A1 (en) * | 2022-12-30 | 2024-07-03 | Hitachi Energy Ltd | Semiconductor device and method for producing a semiconductor device |
| CN116230760A (zh) * | 2023-02-23 | 2023-06-06 | 成都森未科技有限公司 | 一种沟槽栅型igbt |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09331062A (ja) * | 1996-06-11 | 1997-12-22 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| WO2011111500A1 (ja) * | 2010-03-09 | 2011-09-15 | 富士電機システムズ株式会社 | 半導体装置 |
| JP5621703B2 (ja) * | 2011-04-26 | 2014-11-12 | 三菱電機株式会社 | 半導体装置 |
| JP5973730B2 (ja) * | 2012-01-05 | 2016-08-23 | ルネサスエレクトロニクス株式会社 | Ｉｅ型トレンチゲートｉｇｂｔ |
| EP2942816B1 (en) * | 2013-08-15 | 2020-10-28 | Fuji Electric Co., Ltd. | Semiconductor device |
| JP6356803B2 (ja) | 2013-11-29 | 2018-07-11 | アーベーベー・テクノロジー・アーゲー | 絶縁ゲートバイポーラトランジスタ |
| JP6353804B2 (ja) * | 2015-03-27 | 2018-07-04 | 株式会社 日立パワーデバイス | 半導体装置及びそれを用いた電力変換装置 |
| JP6605870B2 (ja) * | 2015-07-30 | 2019-11-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2017174923A (ja) * | 2016-03-23 | 2017-09-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP6673501B2 (ja) * | 2016-12-08 | 2020-03-25 | 富士電機株式会社 | 半導体装置 |
| JP6835568B2 (ja) * | 2016-12-22 | 2021-02-24 | ルネサスエレクトロニクス株式会社 | トレンチゲートｉｇｂｔ |
| DE102017107174B4 (de) | 2017-04-04 | 2020-10-08 | Infineon Technologies Ag | IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT |
| DE102017129955B4 (de) * | 2017-12-14 | 2021-10-07 | Infineon Technologies Austria Ag | Halbleitervorrichtung mit einem barrierengebiet sowie elektrische vorrichtung |
| JP7125339B2 (ja) * | 2018-12-26 | 2022-08-24 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
-
2020
- 2020-12-21 EP EP20216115.4A patent/EP4016638A1/en active Pending
-
2021
- 2021-12-17 CN CN202180085877.3A patent/CN116636012A/zh active Pending
- 2021-12-17 JP JP2023537636A patent/JP2024501237A/ja active Pending
- 2021-12-17 WO PCT/EP2021/086590 patent/WO2022136179A1/en not_active Ceased
- 2021-12-17 DE DE212021000529.2U patent/DE212021000529U1/de active Active
- 2021-12-17 US US18/268,804 patent/US20240038879A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10818782B2 (en) | Insulated-gate bipolar transistor (IGBT) including a branched gate trench | |
| JP2024501237A5 (https=) | ||
| JP6614326B2 (ja) | 半導体装置 | |
| JP7327672B2 (ja) | 半導体装置 | |
| CN110692140B (zh) | 半导体装置 | |
| US11569371B2 (en) | Semiconductor device | |
| JP6561611B2 (ja) | 半導体装置 | |
| JP6540906B2 (ja) | 半導体装置 | |
| JP2017147431A (ja) | 半導体装置 | |
| JP6576926B2 (ja) | 半導体装置のエッジ終端および対応する製造方法 | |
| JP2012064641A (ja) | 半導体装置 | |
| JP6606007B2 (ja) | スイッチング素子 | |
| KR101701667B1 (ko) | 트렌치 게이트 전극을 이용하는 ｉｇｂｔ | |
| EP3340311B1 (en) | Trench gate igbt | |
| JP5537359B2 (ja) | 半導体装置 | |
| WO2023127255A1 (ja) | 半導体装置 | |
| JP5531700B2 (ja) | 絶縁ゲートバイポーラトランジスタ | |
| US10748988B2 (en) | Semiconductor device | |
| CN107275388B (zh) | 一种横向高压器件 | |
| JP2016225343A (ja) | 半導体装置 | |
| US20110169080A1 (en) | Charge balance power device and manufacturing method thereof | |
| JP6531731B2 (ja) | 半導体装置 | |
| JP2009246037A (ja) | 横型半導体装置 | |
| US9312331B2 (en) | Semiconductor device | |
| CN109728082B (zh) | 功率半导体器件及其制造方法 |