DE212021000529U1 - Leistungshalbleitervorrichtung mit isolierter Graben-Gate-Elektrode - Google Patents

Leistungshalbleitervorrichtung mit isolierter Graben-Gate-Elektrode Download PDF

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Publication number
DE212021000529U1
DE212021000529U1 DE212021000529.2U DE212021000529U DE212021000529U1 DE 212021000529 U1 DE212021000529 U1 DE 212021000529U1 DE 212021000529 U DE212021000529 U DE 212021000529U DE 212021000529 U1 DE212021000529 U1 DE 212021000529U1
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Germany
Prior art keywords
trench
semiconductor device
power semiconductor
layer
extends
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DE212021000529.2U
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German (de)
English (en)
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Hitachi Energy Ltd
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Hitachi Energy Switzerland AG
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Publication of DE212021000529U1 publication Critical patent/DE212021000529U1/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE212021000529.2U 2020-12-21 2021-12-17 Leistungshalbleitervorrichtung mit isolierter Graben-Gate-Elektrode Active DE212021000529U1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20216115.4 2020-12-21
EP20216115.4A EP4016638A1 (en) 2020-12-21 2020-12-21 Power semiconductor device with an insulated trench gate electrode
PCT/EP2021/086590 WO2022136179A1 (en) 2020-12-21 2021-12-17 Power semiconductor device with an insulated trench gate electrode and method of producing a power semiconductor device

Publications (1)

Publication Number Publication Date
DE212021000529U1 true DE212021000529U1 (de) 2023-12-01

Family

ID=73856430

Family Applications (1)

Application Number Title Priority Date Filing Date
DE212021000529.2U Active DE212021000529U1 (de) 2020-12-21 2021-12-17 Leistungshalbleitervorrichtung mit isolierter Graben-Gate-Elektrode

Country Status (6)

Country Link
US (1) US20240038879A1 (https=)
EP (1) EP4016638A1 (https=)
JP (1) JP2024501237A (https=)
CN (1) CN116636012A (https=)
DE (1) DE212021000529U1 (https=)
WO (1) WO2022136179A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4394881B1 (en) * 2022-12-30 2025-07-30 Hitachi Energy Ltd Semiconductor device and method for producing a semiconductor device
EP4394888A1 (en) * 2022-12-30 2024-07-03 Hitachi Energy Ltd Semiconductor device and method for producing a semiconductor device
EP4394889A1 (en) * 2022-12-30 2024-07-03 Hitachi Energy Ltd Semiconductor device and method for producing a semiconductor device
CN116230760A (zh) * 2023-02-23 2023-06-06 成都森未科技有限公司 一种沟槽栅型igbt

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9825158B2 (en) 2013-11-29 2017-11-21 Abb Schweiz Ag Insulated gate bipolar transistor
US20200006539A1 (en) 2017-04-04 2020-01-02 Infineon Technologies Ag IGBT Having a Barrier Region

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09331062A (ja) * 1996-06-11 1997-12-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
WO2011111500A1 (ja) * 2010-03-09 2011-09-15 富士電機システムズ株式会社 半導体装置
JP5621703B2 (ja) * 2011-04-26 2014-11-12 三菱電機株式会社 半導体装置
JP5973730B2 (ja) * 2012-01-05 2016-08-23 ルネサスエレクトロニクス株式会社 Ｉｅ型トレンチゲートｉｇｂｔ
EP2942816B1 (en) * 2013-08-15 2020-10-28 Fuji Electric Co., Ltd. Semiconductor device
JP6353804B2 (ja) * 2015-03-27 2018-07-04 株式会社 日立パワーデバイス 半導体装置及びそれを用いた電力変換装置
JP6605870B2 (ja) * 2015-07-30 2019-11-13 ルネサスエレクトロニクス株式会社 半導体装置
JP2017174923A (ja) * 2016-03-23 2017-09-28 ルネサスエレクトロニクス株式会社 半導体装置
JP6673501B2 (ja) * 2016-12-08 2020-03-25 富士電機株式会社 半導体装置
JP6835568B2 (ja) * 2016-12-22 2021-02-24 ルネサスエレクトロニクス株式会社 トレンチゲートｉｇｂｔ
DE102017129955B4 (de) * 2017-12-14 2021-10-07 Infineon Technologies Austria Ag Halbleitervorrichtung mit einem barrierengebiet sowie elektrische vorrichtung
JP7125339B2 (ja) * 2018-12-26 2022-08-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9825158B2 (en) 2013-11-29 2017-11-21 Abb Schweiz Ag Insulated gate bipolar transistor
US20200006539A1 (en) 2017-04-04 2020-01-02 Infineon Technologies Ag IGBT Having a Barrier Region

Also Published As

Publication number Publication date
WO2022136179A1 (en) 2022-06-30
JP2024501237A (ja) 2024-01-11
CN116636012A (zh) 2023-08-22
US20240038879A1 (en) 2024-02-01
EP4016638A1 (en) 2022-06-22

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Representative=s name: DENNEMEYER & ASSOCIATES RECHTSANWALTSGESELLSCH, DE

Representative=s name: DENNEMEYER & ASSOCIATES S.A., DE

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