JP2022551136A - 薄膜型キャパシタ製造用ニッケル箔及びその製造方法 - Google Patents
薄膜型キャパシタ製造用ニッケル箔及びその製造方法 Download PDFInfo
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- nickel foil
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 100
- 239000003990 capacitor Substances 0.000 title claims description 29
- 239000010409 thin film Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 title description 24
- 238000009713 electroplating Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 229910001453 nickel ion Inorganic materials 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 9
- 239000008151 electrolyte solution Substances 0.000 claims description 8
- JHUFGBSGINLPOW-UHFFFAOYSA-N 3-chloro-4-(trifluoromethoxy)benzoyl cyanide Chemical compound FC(F)(F)OC1=CC=C(C(=O)C#N)C=C1Cl JHUFGBSGINLPOW-UHFFFAOYSA-N 0.000 claims description 7
- 239000006174 pH buffer Substances 0.000 claims description 7
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 claims description 7
- 229940081974 saccharin Drugs 0.000 claims description 7
- 235000019204 saccharin Nutrition 0.000 claims description 7
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000003607 modifier Substances 0.000 claims description 5
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical group [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 5
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 5
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 claims description 4
- JBTLOLAWFPERSC-UHFFFAOYSA-N 1-[4-(2-hydroxypropoxy)but-2-ynoxy]propan-2-ol Chemical compound CC(O)COCC#CCOCC(C)O JBTLOLAWFPERSC-UHFFFAOYSA-N 0.000 claims description 3
- IXAWTPMDMPUGLV-UHFFFAOYSA-N 2-[4-(2-hydroxyethoxy)but-2-ynoxy]ethanol Chemical compound OCCOCC#CCOCCO IXAWTPMDMPUGLV-UHFFFAOYSA-N 0.000 claims description 3
- REEBJQTUIJTGAL-UHFFFAOYSA-N 3-pyridin-1-ium-1-ylpropane-1-sulfonate Chemical compound [O-]S(=O)(=O)CCC[N+]1=CC=CC=C1 REEBJQTUIJTGAL-UHFFFAOYSA-N 0.000 claims description 3
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 claims description 3
- LVJKDYURDICKEE-UHFFFAOYSA-N [Cl-].C(=O)(O)CCNC(S)=[NH2+] Chemical compound [Cl-].C(=O)(O)CCNC(S)=[NH2+] LVJKDYURDICKEE-UHFFFAOYSA-N 0.000 claims description 3
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims description 3
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 claims description 3
- TVDSBUOJIPERQY-UHFFFAOYSA-N prop-2-yn-1-ol Chemical compound OCC#C TVDSBUOJIPERQY-UHFFFAOYSA-N 0.000 claims description 3
- NPAWNPCNZAPTKA-UHFFFAOYSA-M sodium;propane-1-sulfonate Chemical compound [Na+].CCCS([O-])(=O)=O NPAWNPCNZAPTKA-UHFFFAOYSA-M 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 abstract description 13
- 238000005259 measurement Methods 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 20
- 238000009826 distribution Methods 0.000 description 11
- 239000011888 foil Substances 0.000 description 10
- 239000003792 electrolyte Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000007517 polishing process Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 4
- 229910002113 barium titanate Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000006179 pH buffering agent Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005305 interferometry Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
- H01G4/302—Stacked capacitors obtained by injection of metal in cavities formed in a ceramic body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/085—Vapour deposited
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1272—Semiconductive ceramic capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
Claims (8)
- 算術平均粗さRaが0.05μm以下であり、10点平均粗さRzが0.20μm以下であり、突起の最大高さRtが0.50μm以下であり、60°鏡面光沢度が200GU以上である平坦面を少なくとも一面に具備したことを特徴とする、電解ニッケル箔。
- 前記平坦面は、Raが0.03μm以下、Rzが0.15μm以下、Rtが0.30μm以下であり、60°鏡面光沢度が400GU以上であることを特徴とする、請求項1に記載の電解ニッケル箔。
- 前記電解ニッケル箔の厚さは、1~100μmであることを特徴とする、請求項1又は請求書2に記載の電解ニッケル箔。
- ニッケルイオン前駆体400~600g/L、pH緩衝剤10~30g/L及び粗さ調節剤0.5~2.0g/Lを含み、pHが1~5である電解液を用いて電解メッキする段階を含むことを特徴とする、電解ニッケル箔の製造方法。
- 前記ニッケルイオン前駆体は、硫酸ニッケル、スルファミン酸ニッケル、塩化ニッケル及び窒酸ニッケルからなる群より1種以上選択されることを特徴とする、請求項4に記載の電解ニッケル箔の製造方法。
- 前記粗さ調節剤は、サッカリン、カルボキシエチルイソチオウロニウムクロリド(carboxyethyl isothiuronium chloride)、アリルスルホン酸ナトリウム(sodium allyl sulfonate)、ブチネジオールプロポキシレート(butynediol propoxylate)、ブチネジオールエトキシレート(butynediol ethoxylate)、プロパルギルアルコールプロポキシレート(propargyl alcohol propoxylate)、ピリジニウムプロピルスルフォベタイン(pyridinium propyl sulfobetaine)、プロパンスルホン酸ナトリウム塩(propanesulfonic acid sodium salt)からなる群より2種以上選択されることを特徴とする、請求項4に記載の電解ニッケル箔の製造方法。
- 前記電解メッキは、メッキ液温度40~60℃で電流密度10~100A/dm2の電流を印加することを特徴とする、請求項4に記載の電解ニッケル箔の製造方法。
- 請求項1又は請求項2に記載の電解ニッケル箔、前記電解ニッケル箔の上部に形成された誘電体、前記誘電体の上に形成された伝導性金属層を含むことを特徴とする、薄膜キャパシタ。
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KR1020190132806A KR102281132B1 (ko) | 2019-10-24 | 2019-10-24 | 박막형 커패시터 제조용 전해니켈박 및 그의 제조방법 |
PCT/KR2019/017919 WO2021080085A1 (ko) | 2019-10-24 | 2019-12-17 | 박막형 커패시터 제조용 니켈박 및 그의 제조방법 |
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JP2024045763A Pending JP2024075708A (ja) | 2019-10-24 | 2024-03-21 | 薄膜型キャパシタ製造用ニッケル箔及びその製造方法 |
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Country Status (6)
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US (1) | US20220367114A1 (ja) |
EP (1) | EP4050628A4 (ja) |
JP (2) | JP2022551136A (ja) |
KR (1) | KR102281132B1 (ja) |
CN (1) | CN114586121A (ja) |
WO (1) | WO2021080085A1 (ja) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06346271A (ja) * | 1993-06-03 | 1994-12-20 | Kyushu Hitachi Maxell Ltd | ニッケル積層体並びにその製造方法 |
JP2004087772A (ja) * | 2002-08-27 | 2004-03-18 | Shin Kobe Electric Mach Co Ltd | ニッケルめっき電極 |
JP2006140454A (ja) * | 2004-10-08 | 2006-06-01 | Rohm & Haas Electronic Materials Llc | コンデンサ構造 |
JP2006281575A (ja) * | 2005-03-31 | 2006-10-19 | Daicel Polymer Ltd | 被メッキ樹脂組成物及びメッキ被覆体 |
WO2006118237A1 (ja) * | 2005-04-28 | 2006-11-09 | Mitsui Mining & Smelting Co., Ltd | キャパシタ層形成材及びそのキャパシタ層形成材の製造方法 |
JP2008050673A (ja) * | 2006-08-28 | 2008-03-06 | Toyota Motor Corp | めっき処理方法及びファインピッチ配線基板の製造方法 |
JP2013174671A (ja) * | 2012-02-23 | 2013-09-05 | Nok Corp | 定着用金属複層部材 |
JP2014091845A (ja) * | 2012-11-01 | 2014-05-19 | Dowa Metaltech Kk | ニッケルめっき材およびその製造方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DK422181A (da) * | 1980-10-23 | 1982-04-24 | Hooker Chemicals Plastics Corp | Bad og fremgangsmaade til hoejhastigheds-nikkelelektroplettering |
JPH07278845A (ja) * | 1994-04-14 | 1995-10-24 | Marui Kogyo Kk | クロムめっき製品及びその製造方法 |
JPH08319540A (ja) * | 1995-05-19 | 1996-12-03 | Nippon Steel Corp | レジスト性の優れたFe−Ni合金薄板およびその製造方法 |
JPH11220233A (ja) * | 1998-02-02 | 1999-08-10 | Risho Kogyo Co Ltd | 摺動回路板用ニッケル箔張り積層板 |
JP2000219996A (ja) * | 1999-02-01 | 2000-08-08 | Kobe Steel Ltd | 電子部品用銅又は銅合金板の製造方法 |
JP4090467B2 (ja) * | 2002-05-13 | 2008-05-28 | 三井金属鉱業株式会社 | チップオンフィルム用フレキシブルプリント配線板 |
JP2006049653A (ja) * | 2004-08-05 | 2006-02-16 | Ngk Spark Plug Co Ltd | コンデンサの製造方法 |
JP2006054320A (ja) * | 2004-08-11 | 2006-02-23 | Nikko Metal Manufacturing Co Ltd | プリント配線基板用金属材料 |
JP2006165400A (ja) * | 2004-12-09 | 2006-06-22 | Mitsui Mining & Smelting Co Ltd | キャパシタ層形成材の製造方法及びその製造方法で得られたキャパシタ層形成材 |
US7192654B2 (en) * | 2005-02-22 | 2007-03-20 | Oak-Mitsui Inc. | Multilayered construction for resistor and capacitor formation |
CN101146933B (zh) * | 2005-03-31 | 2010-11-24 | 三井金属矿业株式会社 | 电解铜箔及电解铜箔的制造方法、采用该电解铜箔得到的表面处理电解铜箔、采用该表面处理电解铜箔的覆铜层压板及印刷电路板 |
BRPI0612981A2 (pt) * | 2005-06-20 | 2010-12-14 | Pavco Inc | composiÇço aquosa de galvanizaÇço com liga de zinco-nÍquel e mÉtodo para a deposiÇço de uma liga de zinco-nÍquel sobre um substrato |
JP4904933B2 (ja) * | 2005-09-27 | 2012-03-28 | 日立電線株式会社 | ニッケルめっき液とその製造方法、ニッケルめっき方法およびプリント配線板用銅箔 |
JP2008239420A (ja) * | 2007-03-28 | 2008-10-09 | Matsushita Electric Ind Co Ltd | セラミックグリーンシートの製造方法、セラミックグリーンシートとそれを用いたセラミックコンデンサ |
CN100588748C (zh) * | 2007-09-12 | 2010-02-10 | 福州大学 | 一种高强度高塑性纳米镍及其镀液和制备方法 |
JP5588607B2 (ja) * | 2007-10-31 | 2014-09-10 | 三井金属鉱業株式会社 | 電解銅箔及びその電解銅箔の製造方法 |
US8088658B2 (en) | 2009-04-28 | 2012-01-03 | E. I. Du Pont De Nemours And Company | Thin film capacitor and method of fabrication thereof |
SG178584A1 (en) * | 2009-08-26 | 2012-04-27 | Toyo Kohan Co Ltd | Ni-plated steel sheet for battery can having excellent pressability |
JP2011168818A (ja) * | 2010-02-16 | 2011-09-01 | Brother Co Ltd | 炭素繊維強化炭素複合材からの炭素繊維の脱落防止方法及びその方法を用いて得られる金属被覆炭素繊維強化炭素複合材 |
CN102320559B (zh) * | 2011-09-14 | 2014-06-18 | 上海交通大学 | 一种中空结构的微阵列电极的制备方法 |
JP5958028B2 (ja) * | 2012-04-02 | 2016-07-27 | ソニー株式会社 | スパッタリングターゲットの製造方法 |
US9732434B2 (en) * | 2014-04-18 | 2017-08-15 | Lam Research Corporation | Methods and apparatuses for electroplating nickel using sulfur-free nickel anodes |
JP6582669B2 (ja) * | 2015-07-22 | 2019-10-02 | Tdk株式会社 | 薄膜キャパシタ及び半導体装置 |
JP2017199706A (ja) * | 2016-04-25 | 2017-11-02 | 住友金属鉱山株式会社 | 薄膜キャパシタ材、及び薄膜キャパシタ材の製造方法 |
JP7033905B2 (ja) * | 2017-02-07 | 2022-03-11 | Jx金属株式会社 | 表面処理銅箔、キャリア付銅箔、積層体、プリント配線板の製造方法及び電子機器の製造方法 |
CN107829115B (zh) * | 2017-02-23 | 2020-05-22 | 常州华威新材料有限公司 | 一种背涂模具珍珠镍的电镀工艺与用途 |
KR102065215B1 (ko) * | 2017-12-19 | 2020-01-10 | 주식회사 포스코 | 전기도금법에 의한 표면조도가 우수한 Fe-Ni계 합금 포일의 제조 방법 및 표면조도 향상용 도금액 |
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2019
- 2019-10-24 KR KR1020190132806A patent/KR102281132B1/ko active IP Right Grant
- 2019-12-17 CN CN201980101536.3A patent/CN114586121A/zh active Pending
- 2019-12-17 EP EP19950163.6A patent/EP4050628A4/en active Pending
- 2019-12-17 JP JP2022521004A patent/JP2022551136A/ja active Pending
- 2019-12-17 US US17/753,873 patent/US20220367114A1/en active Pending
- 2019-12-17 WO PCT/KR2019/017919 patent/WO2021080085A1/ko unknown
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06346271A (ja) * | 1993-06-03 | 1994-12-20 | Kyushu Hitachi Maxell Ltd | ニッケル積層体並びにその製造方法 |
JP2004087772A (ja) * | 2002-08-27 | 2004-03-18 | Shin Kobe Electric Mach Co Ltd | ニッケルめっき電極 |
JP2006140454A (ja) * | 2004-10-08 | 2006-06-01 | Rohm & Haas Electronic Materials Llc | コンデンサ構造 |
JP2006281575A (ja) * | 2005-03-31 | 2006-10-19 | Daicel Polymer Ltd | 被メッキ樹脂組成物及びメッキ被覆体 |
WO2006118237A1 (ja) * | 2005-04-28 | 2006-11-09 | Mitsui Mining & Smelting Co., Ltd | キャパシタ層形成材及びそのキャパシタ層形成材の製造方法 |
JP2008050673A (ja) * | 2006-08-28 | 2008-03-06 | Toyota Motor Corp | めっき処理方法及びファインピッチ配線基板の製造方法 |
JP2013174671A (ja) * | 2012-02-23 | 2013-09-05 | Nok Corp | 定着用金属複層部材 |
JP2014091845A (ja) * | 2012-11-01 | 2014-05-19 | Dowa Metaltech Kk | ニッケルめっき材およびその製造方法 |
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KR102281132B1 (ko) | 2021-07-26 |
JP2024075708A (ja) | 2024-06-04 |
CN114586121A (zh) | 2022-06-03 |
EP4050628A1 (en) | 2022-08-31 |
US20220367114A1 (en) | 2022-11-17 |
EP4050628A4 (en) | 2023-01-11 |
WO2021080085A1 (ko) | 2021-04-29 |
KR20210048757A (ko) | 2021-05-04 |
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