、 A7 _B7_PA870280.AMD - 3/7 五、發明說明（） 【先前技術】 由於半導體元件的細微化，積體電路所需的電容絕緣 層二氧化矽薄膜和氮化矽薄膜，因介電常數過低，已逐漸 不合製程所需。鈦酸鋇锶薄膜因介電常數高，可望取代二 5 氧化矽薄膜和氮化矽薄膜，成為積體電路所需的電容絕緣 層。關於濺鍍方法製鍍鈦酸鋇勰薄膜，一般係使用單靶的 鈦酸鋇鰓靶材，由於锶和鋇元素的濺鍍產率不一樣，而造 成薄膜組成成份和靶材不一致或長時間使用後，薄膜組成 成份已未如預期組成成份一致，產生甚多困擾。 10 本案發明人鑑於上述習用單靶濺鍍製作鈦酸鋇锶薄膜 之方法所衍生的各項缺點，乃亟思加以改良創新，並經多 年苦心孤詣潛心研究後，終於成功研發完成本件混合濺鍍 製作鈦酸鋇锶薄膜之方法及其裝置。 【發明目的】 15 本發明之目的即在於提供一種混合濺鍍製作鈦酸鋇錕 薄膜之方法及其裝置，係使用雙靶，即藉由鈦酸鋇靶材和 鈦酸鋰靶材在高溫下混合濺鍍，製作鈇酸鋇鋰薄膜，由於 鈦酸鋇靶材和鈦酸锶靶材為獨立使用的靶材，可各自單獨 控制鈦酸锶靶材和鈦酸鋇靶材的濺鍍功率，解決控制鈦酸 20 鋇魏薄膜組成成份的問題。 【圖式簡單說明】 請參閱以下有關本發明一較佳實施例之詳細說明及其 附圖，將可進一步瞭解本發明之技術内容及其目的功效； 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注音？事項再填寫本頁) --------訂---------線， 經濟部智慧財產局員工消費合作社印製 A7 A7 -gAe702ftn δλ/ιγ> V7 10 五、發明說明（ 有關該實施例之附圖為： 圖一為本發明混合濺鍍製作鈦酸鋇锶薄膜之同時混合 錢锻鈦酸舞乾材和鈦酸鎖把材所使用的賤鑛機示意圖. ,,,圖一為謂混合激鍍製作鈦酸鋇.銀薄膜之方法及其事置 之量測鈦酸鋇锶薄膜介電常數，和漏電流的膜層結構示音 圖.； 亂三為該混合濺鍍製作鈦酸鋇銀薄膜之方法及其裂置 之使用雙乾不同錢鑛功率，所獲得鈦酸鋇銷薄膜的鋇原子 成份關係圖； _ .. . . . 圖四為該混合濺鍍製作鈦酸鋇锶薄膜之方法及其裝置 之鈦酸鋇锶薄膜的X光繞射圖； 周五為§亥混合藏鐘製作欽酸鎖銘薄膜之方法:及其穿置 之不同組成的欽酸類錫薄膜，與介'電常數的關係圖；以及 圖六為該混合濺鍍製J乍鈦酸鋇锶薄膜之方法及其裝置 15 之Bao·43 Sro·57 Ti〇3鈦酸鋇鋰薄膜的漏電流屬。 【主要部分代表符號】 10機械幫浦 12a磁控濺鍍搶 13基板 21二氧化矽（Si〇2)薄膜 23鉑膜（Pt) 【較佳實施例】 按，鈦酸鋇銘薄膜為多元化合物薄膜，本創作係使用 -4 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） I ——！·------- 丨訂---------線- (請先蘭讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製. 11冷凍幫浦 12b磁控濺鑛搶 2〇矽晶片（Si) 22鈦膜（Ti ) 24鈦酸鋇鰓薄膜 (BST) PA870280_1AMD-5/7> 經濟部智慧財產局員工消費合作社印製 、發明說明（ $酸錄材和鈦酸鋇树同時混合機鍍，產生鈦酸賴薄 材所:Ϊ閱圖一’為同時混合賤錢敎酸錄把材和鈦酸鋇把 3用J賤鍍機示意圖真空系統設備為機械幫浦师=1可抽至5Χ 機鑛機内擁有兩隻獨立 的磁控濺錄搶12a、12b，輕材與基;ten 0日 ih %板13間的距離相等，均 、力為Π公分，可叫混合濺賴^^材和㈣絲材。 請參閱圖二，為量測鈦酸鋇鋇薄膜介電常數和漏電流 的膜層結構示意圖。於石夕晶片⑻20上使用熱氧化過程 成長500nm的二氧化矽（別〇2)薄膜21，接著使用電子槍蒸 錢50nm的鈦膜（Ti) 22和120nm的鉑膜（Pt) 23，然後進行 混合賤鍍，得到鈇酸鋇勰薄膜（BST) 24，最後使用微影 過程和蒸鍍金膜製作上電極，成為具有電容結構的膜層。 在此為了考慮各製程溫度、基板和金屬薄膜之間的關係， 特別加了一層二氧化矽21作為阻障層、鈦22作為連接層， 以配合鈦酸鋇锶薄膜24、鉑膜23以及矽晶片20達到最佳連 接狀態。 請參閱圖三，為使用雙靶不同濺鍍功率，所獲得欽酸 鋇鳃薄膜的鋇原子成份關係圖，顯示雙靶混合溅錢方法， "T控制欽酸鎖雜薄膜的組成成份’鎖原子成份是由電子妒 错儀(ESC A)方法量測。 請參閱圖四，為鈦酸鋇锶薄膜的X光繞射圖，說明卷 製程溫度愈高時，混合濺鍍的鈦酸鋇锶薄膜結晶性越好。 請參閱圖五，為不同組成成份的鈦酸鋇鳃薄膜，與介 15 20 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） L -----lt--------訂------- — i λ» J(請先閲讀背面之注意事項再填寫本頁) A7 -------------- PA87Q280.AMD - 6/7 五、發明說明（） 電常數的關係圖《不同組成成份的鈦酸鋇锶薄膜24可使用 不同的濺鍍功率所獲得，在圖五中，介電常數最高者為 259，為Bao.43Sr〇.57Ti〇3，使用口5瓦的功率缚鍍鈦酸鋇靶， 同時使用230瓦的功率濺鍍鈦酸锶靶。 5 请參閱圖六，為Ba〇.43 Sro.57 TiCb鈦酸鋇锶薄膜的漏電 流圖，顯示混合濺鍍鈦酸銘靶材和鈦酸鋇靶材，所得的鈦 酸鋇銘薄膜’具有優良特性，可以成為積體電路所需的電 容絕緣層。 上列詳細說明係針對本發明之一可行實施例之且 W明’惟該實施例並非用以限制本發明之專利範圍，絲脫 離本發明技藝精神所為之等效實施或變更，均應包含於本 案之專利範圍中。 综上所述’本案不但在技術思想上確屬創新，並能較 省用物czni曰進上述多項功效，應已充分符合新賴性及進步 性之法定發明專利要件，爰依法提出申請，懇請貴局核 准本件發明專利申請案，以勵發明，至感德便。 —丨丨丨…-#· (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製、 A7 _B7_PA870280.AMD-3/7 V. Description of the invention () [Previous technology] Due to the miniaturization of semiconductor devices, the silicon dioxide film and silicon nitride film of the capacitor insulation layer required for integrated circuits, due to the excessive dielectric constant Low, has gradually become unsuitable for the process. Barium strontium titanate thin film is expected to replace silicon dioxide film and silicon nitride film due to its high dielectric constant, and it will become a capacitor insulation layer for integrated circuits. Regarding the barium titanate-titanium thin film prepared by the sputtering method, a single target barium titanate gill target is generally used. Due to the different sputtering yields of strontium and barium, the composition of the film and the target are inconsistent or prolonged. After use, the composition of the film has not been consistent with the expected composition, causing a lot of trouble. 10 In view of the various shortcomings derived from the above-mentioned conventional single target sputtering method for making barium strontium titanate thin films, the inventor has eagerly improved and innovated, and after years of painstaking and meticulous research, finally successfully developed this hybrid sputtering production Method and device for barium strontium titanate thin film. [Objective of the Invention] 15 The purpose of the present invention is to provide a method and a device for preparing barium hafnium titanate thin film by hybrid sputtering, which uses a dual target, that is, a barium titanate target and a lithium titanate target at a high temperature. Mixed sputtering is used to make lithium barium titanate thin film. Since the barium titanate target and strontium titanate target are independent targets, the sputtering power of the strontium titanate target and barium titanate target can be controlled independently. Solve the problem of controlling the composition of the 20 barium titanate film. [Brief description of the drawings] Please refer to the following detailed description of a preferred embodiment of the present invention and the accompanying drawings, to further understand the technical content of the present invention and its purpose and efficacy; This paper size is applicable to Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) (Please read the phonetic on the back? Matters before filling out this page) -------- Order --------- line, Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Consumption Cooperative Printed A7 A7 -gAe702ftn δλ / ιγ > V7 10 V. Description of the invention (The drawings related to this embodiment are as follows: Figure 1 shows the mixed sputter plating of barium strontium titanate film and the mixed metal forging titanate dance dry material Schematic diagram of the base ore machine used with the titanate lock material. Figure 1, is a method for preparing barium titanate by hybrid laser plating. The method of silver film and its measurement of the dielectric constant of barium strontium titanate film, and Schematic diagram of the film structure of the leakage current; The method of making the barium silver titanate thin film for the mixed sputtering and the splitting method uses different dry powers to obtain the barium atomic composition of the barium titanate pin thin film Relation diagram; _ .... Figure 4 shows the mixed sputtering process for barium strontium titanate thin film. X-ray diffraction pattern of barium strontium titanate thin film of the method and its device; Friday, the method of making cinnamic acid lock film for §Hai mixed Tibetan bell: and wearing a cinnamic acid tin film of different composition, and medium ' The relationship diagram of the electric constants; and Fig. 6 shows the leakage current of Bao · 43 Sro · 57 Ti〇3 lithium barium titanate thin film of the method and device 15 of the method and device for preparing J barium strontium thin film by hybrid sputtering. [Main Some representative symbols] 10 mechanical pumps 12a magnetron sputtering 13 substrate 21 silicon dioxide (SiO2) film 23 platinum film (Pt) [preferred embodiment] According to the barium titanate film is a multi-component compound film, This creative department uses -4-This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 public love) I ——! · ------- 丨 order --------- line -(Please read the precautions on the reverse side before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 11 Freezing Pump 12b Magnetron Sputtering Grab 20 Silicon Wafer (Si) 22 Titanium Film (Ti) 24 Barium titanate gill film (BST) PA870280_1AMD-5 / 7 > Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economy When the machine is plated by a mixer, the thin film of titanium titanate is produced: See Figure 1 'for the simultaneous mixing of cheap money, acid recording materials and barium titanate handles. 3 Schematic diagram of J base plating machine. Vacuum system equipment is mechanical pump division = 1 It can be pumped to 5 × machine. There are two independent magnetrons in the mining machine. 12a, 12b, light material and base; the distance between the i0% and the plate 13 on the tenth day is equal, and the average force is Π cm. It can be called mixed splashing. ^^ 材 和 ㈣ 丝 材。 Please refer to Figure 2, which is a schematic diagram of the film structure for measuring the dielectric constant and leakage current of the barium titanate thin film. On the Shixi wafer 20, a 500 nm silicon dioxide (Be 02) film 21 was grown using a thermal oxidation process, and then a 50 nm titanium film (Ti) 22 and a 120 nm platinum film (Pt) 23 were steamed using an electron gun, and then mixed. Base plating was performed to obtain a barium osmium osmium thin film (BST) 24. Finally, a photolithography process and an evaporation gold film were used to make the upper electrode, which became a film layer with a capacitor structure. In order to consider the relationship between the process temperature, the substrate and the metal film, a layer of silicon dioxide 21 is added as a barrier layer and titanium 22 is used as a connection layer to match the barium strontium titanate film 24, platinum film 23, and silicon. The wafer 20 reaches an optimal connection state. Please refer to Figure 3, which shows the barium atomic composition of the barium cinnamate gill film obtained by using two targets with different sputtering powers, showing the dual target mixed sputtering method, " T controls the composition of the enamel lock film Atomic components are measured by the Electronic Error Correction (ESC A) method. Please refer to Figure 4 for the X-ray diffraction pattern of the barium strontium titanate thin film, which shows that the higher the temperature of the rolling process, the better the crystallinity of the barium strontium titanate thin film prepared by hybrid sputtering. Please refer to Figure 5. It is a barium titanate gill film with different composition, and the paper size is 15 20 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) L ----- lt ---- ---- Order ------- — i λ »J (Please read the notes on the back before filling this page) A7 -------------- PA87Q280.AMD-6 / 7 Fifth, the description of the invention () The relationship diagram of the electrical constant "barium strontium titanate thin film 24 with different composition can be obtained using different sputtering power. In Figure 5, the highest dielectric constant is 259, which is Bao. 43Sr.57Ti03, a barium titanate target was plated with a power of 5 watts, and a strontium titanate target was sputtered with a power of 230 watts. 5 Please refer to Figure 6, which is the leakage current diagram of Ba.43 Sro.57 TiCb barium strontium titanate thin film, showing the mixed sputtering of titanate target and barium titanate target. The obtained barium titanate thin film has Excellent characteristics, can be used as a capacitor insulation layer for integrated circuits. The above detailed description is directed to one of the feasible embodiments of the present invention and it is clear that this embodiment is not intended to limit the patent scope of the present invention, and equivalent implementations or changes that depart from the technical spirit of the present invention should be included Within the scope of the patent in this case. In summary, 'This case is not only innovative in terms of technical ideas, but also more effective than the above-mentioned czni. It should have fully met the new and progressive statutory invention patent requirements, and applied in accordance with the law. Your office approves this patent application for invention to encourage invention and it is a matter of virtue. — 丨 丨 丨…-# · (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs