JP2022544904A5 - - Google Patents

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Publication number
JP2022544904A5
JP2022544904A5 JP2022506570A JP2022506570A JP2022544904A5 JP 2022544904 A5 JP2022544904 A5 JP 2022544904A5 JP 2022506570 A JP2022506570 A JP 2022506570A JP 2022506570 A JP2022506570 A JP 2022506570A JP 2022544904 A5 JP2022544904 A5 JP 2022544904A5
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JP
Japan
Prior art keywords
material layer
selective etching
titanium
containing material
etching
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Application number
JP2022506570A
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English (en)
Japanese (ja)
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JP2022544904A (ja
JP7427155B2 (ja
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Priority claimed from PCT/US2020/031666 external-priority patent/WO2021040823A1/en
Publication of JP2022544904A publication Critical patent/JP2022544904A/ja
Publication of JP2022544904A5 publication Critical patent/JP2022544904A5/ja
Application granted granted Critical
Publication of JP7427155B2 publication Critical patent/JP7427155B2/ja
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JP2022506570A 2019-08-23 2020-05-06 別の金属及び誘電体に対してチューニング可能な選択性を有するチタン含有材料層の非プラズマエッチング Active JP7427155B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962891115P 2019-08-23 2019-08-23
US62/891,115 2019-08-23
PCT/US2020/031666 WO2021040823A1 (en) 2019-08-23 2020-05-06 Non-plasma etch of titanium-containing material layers with tunable selectivity to alternate metals and dielectrics

Publications (3)

Publication Number Publication Date
JP2022544904A JP2022544904A (ja) 2022-10-24
JP2022544904A5 true JP2022544904A5 (https=) 2023-04-13
JP7427155B2 JP7427155B2 (ja) 2024-02-05

Family

ID=74645626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022506570A Active JP7427155B2 (ja) 2019-08-23 2020-05-06 別の金属及び誘電体に対してチューニング可能な選択性を有するチタン含有材料層の非プラズマエッチング

Country Status (6)

Country Link
US (1) US11322350B2 (https=)
JP (1) JP7427155B2 (https=)
KR (1) KR102914940B1 (https=)
CN (1) CN114207787A (https=)
TW (1) TW202109664A (https=)
WO (1) WO2021040823A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115461846B (zh) 2020-03-31 2023-07-25 玛特森技术公司 使用氟碳等离子体的工件的加工
JP7664085B2 (ja) * 2021-05-28 2025-04-17 東京エレクトロン株式会社 エッチング方法およびエッチング装置
CN115775723A (zh) * 2022-12-22 2023-03-10 上海集成电路装备材料产业创新中心有限公司 一种去除干法刻蚀中聚合物的方法
WO2025122237A1 (en) * 2023-12-08 2025-06-12 Tokyo Electron Limited Selective non-plasma deposition of mask protection material

Family Cites Families (24)

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Publication number Priority date Publication date Assignee Title
JPH11214354A (ja) * 1998-01-20 1999-08-06 Toshiba Corp 半導体装置の製造方法
JP3887123B2 (ja) 1999-04-27 2007-02-28 芝浦メカトロニクス株式会社 ドライエッチング方法
US6531404B1 (en) * 2000-08-04 2003-03-11 Applied Materials Inc. Method of etching titanium nitride
US7521304B1 (en) * 2002-08-29 2009-04-21 Advanced Micro Devices, Inc. Method for forming integrated circuit
US7029536B2 (en) 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
US20060016783A1 (en) * 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
US7718032B2 (en) 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
JP2008270522A (ja) 2007-04-20 2008-11-06 Oki Electric Ind Co Ltd 半導体装置の製造方法
US7618894B2 (en) * 2007-07-26 2009-11-17 Unity Semiconductor Corporation Multi-step selective etching for cross-point memory
US8303716B2 (en) 2008-07-31 2012-11-06 Tokyo Electron Limited High throughput processing system for chemical treatment and thermal treatment and method of operating
US7972966B2 (en) * 2009-05-19 2011-07-05 International Business Machines Corporation Etching of tungsten selective to titanium nitride
JP5638413B2 (ja) * 2011-02-08 2014-12-10 東京エレクトロン株式会社 マスクパターンの形成方法
JP5931573B2 (ja) * 2011-05-13 2016-06-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8647991B1 (en) * 2012-07-30 2014-02-11 United Microelectronics Corp. Method for forming dual damascene opening
JP6032033B2 (ja) * 2013-02-01 2016-11-24 セントラル硝子株式会社 シリコンのドライエッチング方法
JP6139986B2 (ja) * 2013-05-31 2017-05-31 東京エレクトロン株式会社 エッチング方法
US10003022B2 (en) * 2014-03-04 2018-06-19 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell structure with conductive etch-stop layer
US9508561B2 (en) * 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications
US9553102B2 (en) * 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
KR20180014207A (ko) 2015-06-26 2018-02-07 도쿄엘렉트론가부시키가이샤 기상 식각 시스템 및 방법
JP6769760B2 (ja) 2016-07-08 2020-10-14 関東化学株式会社 エッチング液組成物およびエッチング方法
CN107887425B (zh) * 2016-09-30 2020-05-12 中芯国际集成电路制造(北京)有限公司 半导体装置的制造方法
US10546748B2 (en) * 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
DE102017206842A1 (de) * 2017-04-24 2018-10-25 Coperion Gmbh Verfahren zur pneumatischen Förderung von Kunststoffgranulat

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