KR102914940B1 - 대체 금속과 유전체에 대한 조정가능한 선택성이 있는 티타늄-함유 재료층의 넌플라즈마 에칭 - Google Patents

대체 금속과 유전체에 대한 조정가능한 선택성이 있는 티타늄-함유 재료층의 넌플라즈마 에칭

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Publication number
KR102914940B1
KR102914940B1 KR1020227002387A KR20227002387A KR102914940B1 KR 102914940 B1 KR102914940 B1 KR 102914940B1 KR 1020227002387 A KR1020227002387 A KR 1020227002387A KR 20227002387 A KR20227002387 A KR 20227002387A KR 102914940 B1 KR102914940 B1 KR 102914940B1
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KR
South Korea
Prior art keywords
material layer
etching
titanium
containing material
substrate
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KR1020227002387A
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English (en)
Korean (ko)
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KR20220047256A (ko
Inventor
다이스케 이토
숩하딥 칼
신지 이리에
애란 모스덴
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20220047256A publication Critical patent/KR20220047256A/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
KR1020227002387A 2019-08-23 2020-05-06 대체 금속과 유전체에 대한 조정가능한 선택성이 있는 티타늄-함유 재료층의 넌플라즈마 에칭 Active KR102914940B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962891115P 2019-08-23 2019-08-23
US62/891,115 2019-08-23
PCT/US2020/031666 WO2021040823A1 (en) 2019-08-23 2020-05-06 Non-plasma etch of titanium-containing material layers with tunable selectivity to alternate metals and dielectrics

Publications (2)

Publication Number Publication Date
KR20220047256A KR20220047256A (ko) 2022-04-15
KR102914940B1 true KR102914940B1 (ko) 2026-01-19

Family

ID=74645626

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227002387A Active KR102914940B1 (ko) 2019-08-23 2020-05-06 대체 금속과 유전체에 대한 조정가능한 선택성이 있는 티타늄-함유 재료층의 넌플라즈마 에칭

Country Status (6)

Country Link
US (1) US11322350B2 (https=)
JP (1) JP7427155B2 (https=)
KR (1) KR102914940B1 (https=)
CN (1) CN114207787A (https=)
TW (1) TW202109664A (https=)
WO (1) WO2021040823A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115461846B (zh) 2020-03-31 2023-07-25 玛特森技术公司 使用氟碳等离子体的工件的加工
JP7664085B2 (ja) * 2021-05-28 2025-04-17 東京エレクトロン株式会社 エッチング方法およびエッチング装置
CN115775723A (zh) * 2022-12-22 2023-03-10 上海集成电路装备材料产业创新中心有限公司 一种去除干法刻蚀中聚合物的方法
WO2025122237A1 (en) * 2023-12-08 2025-06-12 Tokyo Electron Limited Selective non-plasma deposition of mask protection material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311887A (ja) * 1999-04-27 2000-11-07 Shibaura Mechatronics Corp ドライエッチング方法
US20100297848A1 (en) * 2009-05-19 2010-11-25 International Business Machines Corporation Etching of tungsten selective to titanium nitride

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JPH11214354A (ja) * 1998-01-20 1999-08-06 Toshiba Corp 半導体装置の製造方法
US6531404B1 (en) * 2000-08-04 2003-03-11 Applied Materials Inc. Method of etching titanium nitride
US7521304B1 (en) * 2002-08-29 2009-04-21 Advanced Micro Devices, Inc. Method for forming integrated circuit
US7029536B2 (en) 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
US20060016783A1 (en) * 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
US7718032B2 (en) 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
JP2008270522A (ja) 2007-04-20 2008-11-06 Oki Electric Ind Co Ltd 半導体装置の製造方法
US7618894B2 (en) * 2007-07-26 2009-11-17 Unity Semiconductor Corporation Multi-step selective etching for cross-point memory
US8303716B2 (en) 2008-07-31 2012-11-06 Tokyo Electron Limited High throughput processing system for chemical treatment and thermal treatment and method of operating
JP5638413B2 (ja) * 2011-02-08 2014-12-10 東京エレクトロン株式会社 マスクパターンの形成方法
JP5931573B2 (ja) * 2011-05-13 2016-06-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8647991B1 (en) * 2012-07-30 2014-02-11 United Microelectronics Corp. Method for forming dual damascene opening
JP6032033B2 (ja) * 2013-02-01 2016-11-24 セントラル硝子株式会社 シリコンのドライエッチング方法
JP6139986B2 (ja) * 2013-05-31 2017-05-31 東京エレクトロン株式会社 エッチング方法
US10003022B2 (en) * 2014-03-04 2018-06-19 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell structure with conductive etch-stop layer
US9508561B2 (en) * 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications
US9553102B2 (en) * 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
KR20180014207A (ko) 2015-06-26 2018-02-07 도쿄엘렉트론가부시키가이샤 기상 식각 시스템 및 방법
JP6769760B2 (ja) 2016-07-08 2020-10-14 関東化学株式会社 エッチング液組成物およびエッチング方法
CN107887425B (zh) * 2016-09-30 2020-05-12 中芯国际集成电路制造(北京)有限公司 半导体装置的制造方法
US10546748B2 (en) * 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
DE102017206842A1 (de) * 2017-04-24 2018-10-25 Coperion Gmbh Verfahren zur pneumatischen Förderung von Kunststoffgranulat

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Publication number Priority date Publication date Assignee Title
JP2000311887A (ja) * 1999-04-27 2000-11-07 Shibaura Mechatronics Corp ドライエッチング方法
US20100297848A1 (en) * 2009-05-19 2010-11-25 International Business Machines Corporation Etching of tungsten selective to titanium nitride

Also Published As

Publication number Publication date
JP2022544904A (ja) 2022-10-24
KR20220047256A (ko) 2022-04-15
CN114207787A (zh) 2022-03-18
US11322350B2 (en) 2022-05-03
JP7427155B2 (ja) 2024-02-05
TW202109664A (zh) 2021-03-01
US20210057213A1 (en) 2021-02-25
WO2021040823A1 (en) 2021-03-04

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