CN114207787A - 对交替的金属和电介质具有可调选择性的含钛材料层非等离子体刻蚀 - Google Patents

对交替的金属和电介质具有可调选择性的含钛材料层非等离子体刻蚀 Download PDF

Info

Publication number
CN114207787A
CN114207787A CN202080055950.8A CN202080055950A CN114207787A CN 114207787 A CN114207787 A CN 114207787A CN 202080055950 A CN202080055950 A CN 202080055950A CN 114207787 A CN114207787 A CN 114207787A
Authority
CN
China
Prior art keywords
titanium
etching
containing material
material layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080055950.8A
Other languages
English (en)
Chinese (zh)
Inventor
伊藤大辅
苏巴迪普·卡尔
入江伸次
艾兰·莫斯登
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN114207787A publication Critical patent/CN114207787A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
CN202080055950.8A 2019-08-23 2020-05-06 对交替的金属和电介质具有可调选择性的含钛材料层非等离子体刻蚀 Pending CN114207787A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962891115P 2019-08-23 2019-08-23
US62/891,115 2019-08-23
PCT/US2020/031666 WO2021040823A1 (en) 2019-08-23 2020-05-06 Non-plasma etch of titanium-containing material layers with tunable selectivity to alternate metals and dielectrics

Publications (1)

Publication Number Publication Date
CN114207787A true CN114207787A (zh) 2022-03-18

Family

ID=74645626

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080055950.8A Pending CN114207787A (zh) 2019-08-23 2020-05-06 对交替的金属和电介质具有可调选择性的含钛材料层非等离子体刻蚀

Country Status (6)

Country Link
US (1) US11322350B2 (https=)
JP (1) JP7427155B2 (https=)
KR (1) KR102914940B1 (https=)
CN (1) CN114207787A (https=)
TW (1) TW202109664A (https=)
WO (1) WO2021040823A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115410916A (zh) * 2021-05-28 2022-11-29 东京毅力科创株式会社 蚀刻方法和蚀刻装置
CN115775723A (zh) * 2022-12-22 2023-03-10 上海集成电路装备材料产业创新中心有限公司 一种去除干法刻蚀中聚合物的方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115461846B (zh) 2020-03-31 2023-07-25 玛特森技术公司 使用氟碳等离子体的工件的加工
WO2025122237A1 (en) * 2023-12-08 2025-06-12 Tokyo Electron Limited Selective non-plasma deposition of mask protection material

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060016783A1 (en) * 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
CN104969333A (zh) * 2013-02-01 2015-10-07 中央硝子株式会社 硅的干蚀刻方法
US20180240667A1 (en) * 2017-02-17 2018-08-23 Lam Research Corporation Tin oxide films in semiconductor device manufacturing

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214354A (ja) * 1998-01-20 1999-08-06 Toshiba Corp 半導体装置の製造方法
JP3887123B2 (ja) 1999-04-27 2007-02-28 芝浦メカトロニクス株式会社 ドライエッチング方法
US6531404B1 (en) * 2000-08-04 2003-03-11 Applied Materials Inc. Method of etching titanium nitride
US7521304B1 (en) * 2002-08-29 2009-04-21 Advanced Micro Devices, Inc. Method for forming integrated circuit
US7029536B2 (en) 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
US7718032B2 (en) 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
JP2008270522A (ja) 2007-04-20 2008-11-06 Oki Electric Ind Co Ltd 半導体装置の製造方法
US7618894B2 (en) * 2007-07-26 2009-11-17 Unity Semiconductor Corporation Multi-step selective etching for cross-point memory
US8303716B2 (en) 2008-07-31 2012-11-06 Tokyo Electron Limited High throughput processing system for chemical treatment and thermal treatment and method of operating
US7972966B2 (en) * 2009-05-19 2011-07-05 International Business Machines Corporation Etching of tungsten selective to titanium nitride
JP5638413B2 (ja) * 2011-02-08 2014-12-10 東京エレクトロン株式会社 マスクパターンの形成方法
JP5931573B2 (ja) * 2011-05-13 2016-06-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8647991B1 (en) * 2012-07-30 2014-02-11 United Microelectronics Corp. Method for forming dual damascene opening
JP6139986B2 (ja) * 2013-05-31 2017-05-31 東京エレクトロン株式会社 エッチング方法
US10003022B2 (en) * 2014-03-04 2018-06-19 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell structure with conductive etch-stop layer
US9508561B2 (en) * 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications
US9553102B2 (en) * 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
KR20180014207A (ko) 2015-06-26 2018-02-07 도쿄엘렉트론가부시키가이샤 기상 식각 시스템 및 방법
JP6769760B2 (ja) 2016-07-08 2020-10-14 関東化学株式会社 エッチング液組成物およびエッチング方法
CN107887425B (zh) * 2016-09-30 2020-05-12 中芯国际集成电路制造(北京)有限公司 半导体装置的制造方法
DE102017206842A1 (de) * 2017-04-24 2018-10-25 Coperion Gmbh Verfahren zur pneumatischen Förderung von Kunststoffgranulat

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060016783A1 (en) * 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
CN104969333A (zh) * 2013-02-01 2015-10-07 中央硝子株式会社 硅的干蚀刻方法
US20160005612A1 (en) * 2013-02-01 2016-01-07 Central Glass Company, Limited Silicon Dry Etching Method
US20180240667A1 (en) * 2017-02-17 2018-08-23 Lam Research Corporation Tin oxide films in semiconductor device manufacturing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115410916A (zh) * 2021-05-28 2022-11-29 东京毅力科创株式会社 蚀刻方法和蚀刻装置
CN115410916B (zh) * 2021-05-28 2026-04-03 东京毅力科创株式会社 蚀刻方法和蚀刻装置
CN115775723A (zh) * 2022-12-22 2023-03-10 上海集成电路装备材料产业创新中心有限公司 一种去除干法刻蚀中聚合物的方法

Also Published As

Publication number Publication date
JP2022544904A (ja) 2022-10-24
KR20220047256A (ko) 2022-04-15
US11322350B2 (en) 2022-05-03
JP7427155B2 (ja) 2024-02-05
KR102914940B1 (ko) 2026-01-19
TW202109664A (zh) 2021-03-01
US20210057213A1 (en) 2021-02-25
WO2021040823A1 (en) 2021-03-04

Similar Documents

Publication Publication Date Title
US20240301584A1 (en) Method and apparatus for precleaning a substrate surface prior to epitaxial growth
TWI784174B (zh) 具有矽鍺合金之可控制蝕刻選擇性的氣相蝕刻
TWI648791B (zh) Etching method
US11322350B2 (en) Non-plasma etch of titanium-containing material layers with tunable selectivity to alternate metals and dielectrics
KR101853522B1 (ko) 에칭 방법 및 기억 매체
TWI806835B (zh) 蝕刻方法及ｄｒａｍ電容器之製造方法
TWI648790B (zh) Etching method
TWI865561B (zh) 利用金屬的可控制蝕刻選擇性之氣相蝕刻
WO2015041746A1 (en) Methods for stabilizing an interface post etch to minimize queue time issues before next processing step
TW202301459A (zh) 氧化銦鎵鋅的蝕刻
US20150064921A1 (en) Low temperature plasma anneal process for sublimative etch processes
US20210074583A1 (en) Interconnection structure of selective deposition process
US20180247827A1 (en) Semiconductor manufacturing method and plasma processing apparatus
WO2021049306A1 (ja) 成膜方法、成膜装置および成膜システム

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20220318