TW202109664A - 相對於交替的金屬和介電質具有可調整選擇性的含鈦材料層的非電漿蝕刻 - Google Patents

相對於交替的金屬和介電質具有可調整選擇性的含鈦材料層的非電漿蝕刻 Download PDF

Info

Publication number
TW202109664A
TW202109664A TW109115185A TW109115185A TW202109664A TW 202109664 A TW202109664 A TW 202109664A TW 109115185 A TW109115185 A TW 109115185A TW 109115185 A TW109115185 A TW 109115185A TW 202109664 A TW202109664 A TW 202109664A
Authority
TW
Taiwan
Prior art keywords
material layer
etching
titanium
substrate
containing material
Prior art date
Application number
TW109115185A
Other languages
English (en)
Chinese (zh)
Inventor
伊藤　大輔
蘇巴迪普 卡爾
入江伸次
艾倫 莫斯登
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202109664A publication Critical patent/TW202109664A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
TW109115185A 2019-08-23 2020-05-07 相對於交替的金屬和介電質具有可調整選擇性的含鈦材料層的非電漿蝕刻 TW202109664A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962891115P 2019-08-23 2019-08-23
US62/891,115 2019-08-23

Publications (1)

Publication Number Publication Date
TW202109664A true TW202109664A (zh) 2021-03-01

Family

ID=74645626

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109115185A TW202109664A (zh) 2019-08-23 2020-05-07 相對於交替的金屬和介電質具有可調整選擇性的含鈦材料層的非電漿蝕刻

Country Status (6)

Country Link
US (1) US11322350B2 (https=)
JP (1) JP7427155B2 (https=)
KR (1) KR102914940B1 (https=)
CN (1) CN114207787A (https=)
TW (1) TW202109664A (https=)
WO (1) WO2021040823A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115461846B (zh) 2020-03-31 2023-07-25 玛特森技术公司 使用氟碳等离子体的工件的加工
JP7664085B2 (ja) * 2021-05-28 2025-04-17 東京エレクトロン株式会社 エッチング方法およびエッチング装置
CN115775723A (zh) * 2022-12-22 2023-03-10 上海集成电路装备材料产业创新中心有限公司 一种去除干法刻蚀中聚合物的方法
WO2025122237A1 (en) * 2023-12-08 2025-06-12 Tokyo Electron Limited Selective non-plasma deposition of mask protection material

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214354A (ja) * 1998-01-20 1999-08-06 Toshiba Corp 半導体装置の製造方法
JP3887123B2 (ja) 1999-04-27 2007-02-28 芝浦メカトロニクス株式会社 ドライエッチング方法
US6531404B1 (en) * 2000-08-04 2003-03-11 Applied Materials Inc. Method of etching titanium nitride
US7521304B1 (en) * 2002-08-29 2009-04-21 Advanced Micro Devices, Inc. Method for forming integrated circuit
US7029536B2 (en) 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
US20060016783A1 (en) * 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
US7718032B2 (en) 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
JP2008270522A (ja) 2007-04-20 2008-11-06 Oki Electric Ind Co Ltd 半導体装置の製造方法
US7618894B2 (en) * 2007-07-26 2009-11-17 Unity Semiconductor Corporation Multi-step selective etching for cross-point memory
US8303716B2 (en) 2008-07-31 2012-11-06 Tokyo Electron Limited High throughput processing system for chemical treatment and thermal treatment and method of operating
US7972966B2 (en) * 2009-05-19 2011-07-05 International Business Machines Corporation Etching of tungsten selective to titanium nitride
JP5638413B2 (ja) * 2011-02-08 2014-12-10 東京エレクトロン株式会社 マスクパターンの形成方法
JP5931573B2 (ja) * 2011-05-13 2016-06-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8647991B1 (en) * 2012-07-30 2014-02-11 United Microelectronics Corp. Method for forming dual damascene opening
JP6032033B2 (ja) * 2013-02-01 2016-11-24 セントラル硝子株式会社 シリコンのドライエッチング方法
JP6139986B2 (ja) * 2013-05-31 2017-05-31 東京エレクトロン株式会社 エッチング方法
US10003022B2 (en) * 2014-03-04 2018-06-19 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell structure with conductive etch-stop layer
US9508561B2 (en) * 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications
US9553102B2 (en) * 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
KR20180014207A (ko) 2015-06-26 2018-02-07 도쿄엘렉트론가부시키가이샤 기상 식각 시스템 및 방법
JP6769760B2 (ja) 2016-07-08 2020-10-14 関東化学株式会社 エッチング液組成物およびエッチング方法
CN107887425B (zh) * 2016-09-30 2020-05-12 中芯国际集成电路制造(北京)有限公司 半导体装置的制造方法
US10546748B2 (en) * 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
DE102017206842A1 (de) * 2017-04-24 2018-10-25 Coperion Gmbh Verfahren zur pneumatischen Förderung von Kunststoffgranulat

Also Published As

Publication number Publication date
JP2022544904A (ja) 2022-10-24
KR20220047256A (ko) 2022-04-15
CN114207787A (zh) 2022-03-18
US11322350B2 (en) 2022-05-03
JP7427155B2 (ja) 2024-02-05
KR102914940B1 (ko) 2026-01-19
US20210057213A1 (en) 2021-02-25
WO2021040823A1 (en) 2021-03-04

Similar Documents

Publication Publication Date Title
US10923356B2 (en) Gas phase etch with controllable etch selectivity of silicon-germanium alloys
US11322350B2 (en) Non-plasma etch of titanium-containing material layers with tunable selectivity to alternate metals and dielectrics
CN113851581B (zh) 用于形成mram应用中使用的具有期望的结晶度的结构的方法
TWI806835B (zh) 蝕刻方法及ｄｒａｍ電容器之製造方法
US20210217628A1 (en) GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING ARC OR SILICON OXYNITRIDE TO DIFFERENT FILMS OR MASKS
JP7195060B2 (ja) 基板処理方法及び基板処理装置
JP6139986B2 (ja) エッチング方法
TWI865561B (zh) 利用金屬的可控制蝕刻選擇性之氣相蝕刻
US20150040822A1 (en) Method and apparatus for precleaning a substrate surface prior to epitaxial growth
TWI675420B (zh) 蝕刻方法
US11380554B2 (en) Gas phase etching system and method
TW201810414A (zh) 氧化膜去除方法、去除裝置、接點形成方法、接點形成系統及記憶媒體
WO2022177836A1 (en) Methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers
US20230395386A1 (en) Etching processing apparatus and etching processing method
KR101716535B1 (ko) 에칭 장치 및 에칭 방법
WO2015186461A1 (ja) エッチング方法
KR20260059656A (ko) 에칭 방법 및 에칭 장치