JP7427155B2 - 別の金属及び誘電体に対してチューニング可能な選択性を有するチタン含有材料層の非プラズマエッチング - Google Patents

別の金属及び誘電体に対してチューニング可能な選択性を有するチタン含有材料層の非プラズマエッチング Download PDF

Info

Publication number
JP7427155B2
JP7427155B2 JP2022506570A JP2022506570A JP7427155B2 JP 7427155 B2 JP7427155 B2 JP 7427155B2 JP 2022506570 A JP2022506570 A JP 2022506570A JP 2022506570 A JP2022506570 A JP 2022506570A JP 7427155 B2 JP7427155 B2 JP 7427155B2
Authority
JP
Japan
Prior art keywords
material layer
titanium
etching
containing material
selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022506570A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022544904A (ja
JP2022544904A5 (https=
Inventor
大輔 伊藤
カル，スバディープ
伸次 入江
モスデン，アエラン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2022544904A publication Critical patent/JP2022544904A/ja
Publication of JP2022544904A5 publication Critical patent/JP2022544904A5/ja
Application granted granted Critical
Publication of JP7427155B2 publication Critical patent/JP7427155B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
JP2022506570A 2019-08-23 2020-05-06 別の金属及び誘電体に対してチューニング可能な選択性を有するチタン含有材料層の非プラズマエッチング Active JP7427155B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962891115P 2019-08-23 2019-08-23
US62/891,115 2019-08-23
PCT/US2020/031666 WO2021040823A1 (en) 2019-08-23 2020-05-06 Non-plasma etch of titanium-containing material layers with tunable selectivity to alternate metals and dielectrics

Publications (3)

Publication Number Publication Date
JP2022544904A JP2022544904A (ja) 2022-10-24
JP2022544904A5 JP2022544904A5 (https=) 2023-04-13
JP7427155B2 true JP7427155B2 (ja) 2024-02-05

Family

ID=74645626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022506570A Active JP7427155B2 (ja) 2019-08-23 2020-05-06 別の金属及び誘電体に対してチューニング可能な選択性を有するチタン含有材料層の非プラズマエッチング

Country Status (6)

Country Link
US (1) US11322350B2 (https=)
JP (1) JP7427155B2 (https=)
KR (1) KR102914940B1 (https=)
CN (1) CN114207787A (https=)
TW (1) TW202109664A (https=)
WO (1) WO2021040823A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115461846B (zh) 2020-03-31 2023-07-25 玛特森技术公司 使用氟碳等离子体的工件的加工
JP7664085B2 (ja) * 2021-05-28 2025-04-17 東京エレクトロン株式会社 エッチング方法およびエッチング装置
CN115775723A (zh) * 2022-12-22 2023-03-10 上海集成电路装备材料产业创新中心有限公司 一种去除干法刻蚀中聚合物的方法
WO2025122237A1 (en) * 2023-12-08 2025-06-12 Tokyo Electron Limited Selective non-plasma deposition of mask protection material

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311887A (ja) 1999-04-27 2000-11-07 Shibaura Mechatronics Corp ドライエッチング方法
JP2008270522A (ja) 2007-04-20 2008-11-06 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP2018006715A (ja) 2016-07-08 2018-01-11 関東化學株式会社 エッチング液組成物およびエッチング方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214354A (ja) * 1998-01-20 1999-08-06 Toshiba Corp 半導体装置の製造方法
US6531404B1 (en) * 2000-08-04 2003-03-11 Applied Materials Inc. Method of etching titanium nitride
US7521304B1 (en) * 2002-08-29 2009-04-21 Advanced Micro Devices, Inc. Method for forming integrated circuit
US7029536B2 (en) 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
US20060016783A1 (en) * 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
US7718032B2 (en) 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
US7618894B2 (en) * 2007-07-26 2009-11-17 Unity Semiconductor Corporation Multi-step selective etching for cross-point memory
US8303716B2 (en) 2008-07-31 2012-11-06 Tokyo Electron Limited High throughput processing system for chemical treatment and thermal treatment and method of operating
US7972966B2 (en) * 2009-05-19 2011-07-05 International Business Machines Corporation Etching of tungsten selective to titanium nitride
JP5638413B2 (ja) * 2011-02-08 2014-12-10 東京エレクトロン株式会社 マスクパターンの形成方法
JP5931573B2 (ja) * 2011-05-13 2016-06-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8647991B1 (en) * 2012-07-30 2014-02-11 United Microelectronics Corp. Method for forming dual damascene opening
JP6032033B2 (ja) * 2013-02-01 2016-11-24 セントラル硝子株式会社 シリコンのドライエッチング方法
JP6139986B2 (ja) * 2013-05-31 2017-05-31 東京エレクトロン株式会社 エッチング方法
US10003022B2 (en) * 2014-03-04 2018-06-19 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell structure with conductive etch-stop layer
US9508561B2 (en) * 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications
US9553102B2 (en) * 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
KR20180014207A (ko) 2015-06-26 2018-02-07 도쿄엘렉트론가부시키가이샤 기상 식각 시스템 및 방법
CN107887425B (zh) * 2016-09-30 2020-05-12 中芯国际集成电路制造(北京)有限公司 半导体装置的制造方法
US10546748B2 (en) * 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
DE102017206842A1 (de) * 2017-04-24 2018-10-25 Coperion Gmbh Verfahren zur pneumatischen Förderung von Kunststoffgranulat

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311887A (ja) 1999-04-27 2000-11-07 Shibaura Mechatronics Corp ドライエッチング方法
JP2008270522A (ja) 2007-04-20 2008-11-06 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP2018006715A (ja) 2016-07-08 2018-01-11 関東化學株式会社 エッチング液組成物およびエッチング方法

Also Published As

Publication number Publication date
JP2022544904A (ja) 2022-10-24
KR20220047256A (ko) 2022-04-15
CN114207787A (zh) 2022-03-18
US11322350B2 (en) 2022-05-03
KR102914940B1 (ko) 2026-01-19
TW202109664A (zh) 2021-03-01
US20210057213A1 (en) 2021-02-25
WO2021040823A1 (en) 2021-03-04

Similar Documents

Publication Publication Date Title
US10923356B2 (en) Gas phase etch with controllable etch selectivity of silicon-germanium alloys
US20240301584A1 (en) Method and apparatus for precleaning a substrate surface prior to epitaxial growth
JP7427155B2 (ja) 別の金属及び誘電体に対してチューニング可能な選択性を有するチタン含有材料層の非プラズマエッチング
US20210217628A1 (en) GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING ARC OR SILICON OXYNITRIDE TO DIFFERENT FILMS OR MASKS
JP6469705B2 (ja) エッチング後のインターフェースを安定化し、次の処理ステップ前のキュータイム問題を最小化する方法
US8772162B2 (en) Method for removing native oxide and associated residue from a substrate
US11380554B2 (en) Gas phase etching system and method
TWI865561B (zh) 利用金屬的可控制蝕刻選擇性之氣相蝕刻
US11094588B2 (en) Interconnection structure of selective deposition process
CN101133682B (zh) 用于蚀刻具有受控制的制程结果分配的方法
KR100899244B1 (ko) 프로세스 결과들의 제어되는 분포를 갖는 에칭을 위한 방법
WO2021049306A1 (ja) 成膜方法、成膜装置および成膜システム

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230327

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230327

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230808

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231101

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20231205

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20231219

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20231219

R150 Certificate of patent or registration of utility model

Ref document number: 7427155

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150