JP2022507400A5 - - Google Patents
Info
- Publication number
- JP2022507400A5 JP2022507400A5 JP2021526290A JP2021526290A JP2022507400A5 JP 2022507400 A5 JP2022507400 A5 JP 2022507400A5 JP 2021526290 A JP2021526290 A JP 2021526290A JP 2021526290 A JP2021526290 A JP 2021526290A JP 2022507400 A5 JP2022507400 A5 JP 2022507400A5
- Authority
- JP
- Japan
- Prior art keywords
- chemical solution
- chemical
- substrate
- processing system
- wet etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862767808P | 2018-11-15 | 2018-11-15 | |
| US62/767,808 | 2018-11-15 | ||
| US16/287,658 | 2019-02-27 | ||
| US16/287,658 US10982335B2 (en) | 2018-11-15 | 2019-02-27 | Wet atomic layer etching using self-limiting and solubility-limited reactions |
| US16/402,611 US11437250B2 (en) | 2018-11-15 | 2019-05-03 | Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions |
| US16/402,611 | 2019-05-03 | ||
| PCT/US2019/061683 WO2020102657A1 (en) | 2018-11-15 | 2019-11-15 | Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022507400A JP2022507400A (ja) | 2022-01-18 |
| JP2022507400A5 true JP2022507400A5 (enExample) | 2022-11-09 |
| JP7454773B2 JP7454773B2 (ja) | 2024-03-25 |
Family
ID=70727909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021526290A Active JP7454773B2 (ja) | 2018-11-15 | 2019-11-15 | 自己律速型で有限溶解度の反応を使用した湿式原子層エッチングのための処理システム及びプラットフォーム |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11437250B2 (enExample) |
| JP (1) | JP7454773B2 (enExample) |
| KR (1) | KR102660772B1 (enExample) |
| CN (1) | CN113039634B (enExample) |
| SG (1) | SG11202104353QA (enExample) |
| TW (1) | TWI887218B (enExample) |
| WO (1) | WO2020102657A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11437250B2 (en) * | 2018-11-15 | 2022-09-06 | Tokyo Electron Limited | Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions |
| US12444610B2 (en) | 2018-11-15 | 2025-10-14 | Tokyo Electron Limited | Methods for etching a substrate using a hybrid wet atomic layer etching process |
| US12243752B2 (en) | 2018-11-15 | 2025-03-04 | Tokyo Electron Limited | Systems for etching a substrate using a hybrid wet atomic layer etching process |
| US12217968B2 (en) * | 2020-04-06 | 2025-02-04 | California Institute Of Technology | Atomic layer etching for smoothing of arbitrary surfaces |
| US11864472B2 (en) | 2020-07-10 | 2024-01-02 | California Institute Of Technology | Methods and systems for atomic layer etching and atomic layer deposition |
| US11915941B2 (en) * | 2021-02-11 | 2024-02-27 | Tokyo Electron Limited | Dynamically adjusted purge timing in wet atomic layer etching |
| JP7827394B2 (ja) * | 2021-02-19 | 2026-03-10 | 東京エレクトロン株式会社 | ハイブリッド湿式原子層エッチングプロセスを使用して基板をエッチングするための方法 |
| US11802342B2 (en) | 2021-10-19 | 2023-10-31 | Tokyo Electron Limited | Methods for wet atomic layer etching of ruthenium |
| US12276033B2 (en) * | 2021-10-19 | 2025-04-15 | Tokyo Electron Limited | Methods for wet etching of noble metals |
| US12506014B2 (en) * | 2021-10-19 | 2025-12-23 | Tokyo Electron Limited | Methods for non-isothermal wet atomic layer etching |
| US11866831B2 (en) | 2021-11-09 | 2024-01-09 | Tokyo Electron Limited | Methods for wet atomic layer etching of copper |
| US12546013B2 (en) * | 2021-11-16 | 2026-02-10 | Nanoclear Technologies, Inc. | Atomic layer roughness reducing methods and devices |
| TW202405932A (zh) * | 2022-06-08 | 2024-02-01 | 日商東京威力科創股份有限公司 | 非等溫濕式原子層蝕刻之方法 |
| WO2024107260A1 (en) * | 2022-11-14 | 2024-05-23 | Tokyo Electron Limited | Methods for wet etching of noble metals |
| US12463050B2 (en) * | 2023-08-30 | 2025-11-04 | Tokyo Electron Limited | Methods for wet atomic layer etching of molybdenum |
| US12604691B2 (en) | 2023-08-30 | 2026-04-14 | Tokyo Electron Limited | Methods for wet atomic layer etching of molybdenum in aqueous solution |
| US12506011B2 (en) * | 2023-12-15 | 2025-12-23 | Tokyo Electron Limited | Methods for wet atomic layer etching of transition metal oxide dielectric materials |
| US20250308917A1 (en) * | 2024-03-28 | 2025-10-02 | Tokyo Electron Limited | Methods for wet atomic layer etching of tungsten |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5374328A (en) * | 1993-03-25 | 1994-12-20 | Watkins Johnson Company | Method of fabricating group III-V compound |
| US6054333A (en) * | 1997-10-14 | 2000-04-25 | University Of Houston | Real time etch measurements and control using isotopes |
| US7338908B1 (en) * | 2003-10-20 | 2008-03-04 | Novellus Systems, Inc. | Method for fabrication of semiconductor interconnect structure with reduced capacitance, leakage current, and improved breakdown voltage |
| US6616014B1 (en) * | 2000-02-25 | 2003-09-09 | The Boc Group, Inc. | Precision liquid mixing apparatus and method |
| US6805769B2 (en) * | 2000-10-13 | 2004-10-19 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
| JP4004266B2 (ja) * | 2000-10-13 | 2007-11-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
| JP3725051B2 (ja) * | 2001-07-27 | 2005-12-07 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| US6896600B1 (en) * | 2002-03-29 | 2005-05-24 | Lam Research Corporation | Liquid dispense manifold for chemical-mechanical polisher |
| US6825123B2 (en) * | 2003-04-15 | 2004-11-30 | Saint-Goban Ceramics & Plastics, Inc. | Method for treating semiconductor processing components and components formed thereby |
| US7531463B2 (en) * | 2003-10-20 | 2009-05-12 | Novellus Systems, Inc. | Fabrication of semiconductor interconnect structure |
| US7582181B2 (en) * | 2004-09-30 | 2009-09-01 | Tokyo Electron Limited | Method and system for controlling a velocity field of a supercritical fluid in a processing system |
| US7442319B2 (en) | 2005-06-28 | 2008-10-28 | Micron Technology, Inc. | Poly etch without separate oxide decap |
| US8771804B2 (en) * | 2005-08-31 | 2014-07-08 | Lam Research Corporation | Processes and systems for engineering a copper surface for selective metal deposition |
| WO2007088182A1 (en) * | 2006-02-01 | 2007-08-09 | Koninklijke Philips Electronics N.V. | Pulsed chemical dispense system |
| US20080149147A1 (en) * | 2006-12-22 | 2008-06-26 | Lam Research | Proximity head with configurable delivery |
| US8283258B2 (en) | 2007-08-16 | 2012-10-09 | Micron Technology, Inc. | Selective wet etching of hafnium aluminum oxide films |
| US7776741B2 (en) * | 2008-08-18 | 2010-08-17 | Novellus Systems, Inc. | Process for through silicon via filing |
| US20100279435A1 (en) * | 2009-04-30 | 2010-11-04 | Applied Materials, Inc. | Temperature control of chemical mechanical polishing |
| US8642448B2 (en) | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
| US20140199840A1 (en) * | 2013-01-11 | 2014-07-17 | Applied Materials, Inc. | Chemical mechanical polishing apparatus and methods |
| JP6308910B2 (ja) * | 2013-11-13 | 2018-04-11 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄システムおよび記憶媒体 |
| JP6163434B2 (ja) * | 2014-01-16 | 2017-07-12 | 株式会社東芝 | 薬液処理装置及び薬液処理方法 |
| US9385197B2 (en) * | 2014-08-29 | 2016-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd | Semiconductor structure with contact over source/drain structure and method for forming the same |
| KR101621482B1 (ko) * | 2014-09-30 | 2016-05-17 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| US10301580B2 (en) * | 2014-12-30 | 2019-05-28 | Versum Materials Us, Llc | Stripping compositions having high WN/W etching selectivity |
| JP6454605B2 (ja) * | 2015-06-01 | 2019-01-16 | 東芝メモリ株式会社 | 基板処理方法および基板処理装置 |
| JP6521242B2 (ja) * | 2015-06-16 | 2019-05-29 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| KR102437717B1 (ko) * | 2015-06-17 | 2022-08-29 | 인텔 코포레이션 | 디바이스 제조를 위한 산화물 층들의 원자 층 제거에 의한 전이 금속 건식 에칭 |
| US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
| JP6611172B2 (ja) * | 2016-01-28 | 2019-11-27 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法 |
| US9991128B2 (en) * | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
| JP6613181B2 (ja) * | 2016-03-17 | 2019-11-27 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| JP6742165B2 (ja) * | 2016-06-14 | 2020-08-19 | 東京エレクトロン株式会社 | 窒化珪素膜の処理方法および窒化珪素膜の形成方法 |
| KR101870650B1 (ko) * | 2016-08-25 | 2018-06-27 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| JP6870944B2 (ja) * | 2016-09-26 | 2021-05-12 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| JP7034645B2 (ja) * | 2017-09-22 | 2022-03-14 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP6933960B2 (ja) * | 2017-11-15 | 2021-09-08 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| SG11202009105YA (en) * | 2018-03-20 | 2020-10-29 | Tokyo Electron Ltd | Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same |
| US11398379B2 (en) * | 2018-03-20 | 2022-07-26 | Tokyo Electron Limited | Platform and method of operating for integrated end-to-end self-aligned multi-patterning process |
| KR102711640B1 (ko) * | 2018-03-20 | 2024-09-27 | 도쿄엘렉트론가부시키가이샤 | 통합된 단부-대-단부 게이트 콘택 프로세스를 위한 플랫폼 및 동작 방법 |
| US11437250B2 (en) * | 2018-11-15 | 2022-09-06 | Tokyo Electron Limited | Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions |
-
2019
- 2019-05-03 US US16/402,611 patent/US11437250B2/en active Active
- 2019-11-15 JP JP2021526290A patent/JP7454773B2/ja active Active
- 2019-11-15 WO PCT/US2019/061683 patent/WO2020102657A1/en not_active Ceased
- 2019-11-15 CN CN201980074922.8A patent/CN113039634B/zh active Active
- 2019-11-15 TW TW108141589A patent/TWI887218B/zh active
- 2019-11-15 KR KR1020217017192A patent/KR102660772B1/ko active Active
- 2019-11-15 SG SG11202104353QA patent/SG11202104353QA/en unknown
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