JP2009507135A5 - - Google Patents

Download PDF

Info

Publication number
JP2009507135A5
JP2009507135A5 JP2008529370A JP2008529370A JP2009507135A5 JP 2009507135 A5 JP2009507135 A5 JP 2009507135A5 JP 2008529370 A JP2008529370 A JP 2008529370A JP 2008529370 A JP2008529370 A JP 2008529370A JP 2009507135 A5 JP2009507135 A5 JP 2009507135A5
Authority
JP
Japan
Prior art keywords
substrate
catalyst layer
copper
supplying
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008529370A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009507135A (ja
JP5043014B2 (ja
Filing date
Publication date
Priority claimed from US11/461,415 external-priority patent/US20070048447A1/en
Application filed filed Critical
Publication of JP2009507135A publication Critical patent/JP2009507135A/ja
Publication of JP2009507135A5 publication Critical patent/JP2009507135A5/ja
Application granted granted Critical
Publication of JP5043014B2 publication Critical patent/JP5043014B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008529370A 2005-08-31 2006-08-31 無電解銅メッキによってパターン化銅線を形成するためのシステムおよび方法 Active JP5043014B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US71349405P 2005-08-31 2005-08-31
US60/713,494 2005-08-31
US11/461,415 US20070048447A1 (en) 2005-08-31 2006-07-31 System and method for forming patterned copper lines through electroless copper plating
US11/461,415 2006-07-31
PCT/US2006/034555 WO2007028156A2 (en) 2005-08-31 2006-08-31 System and method for forming patterned copper lines through electroless copper plating

Publications (3)

Publication Number Publication Date
JP2009507135A JP2009507135A (ja) 2009-02-19
JP2009507135A5 true JP2009507135A5 (enExample) 2010-11-25
JP5043014B2 JP5043014B2 (ja) 2012-10-10

Family

ID=37804525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008529370A Active JP5043014B2 (ja) 2005-08-31 2006-08-31 無電解銅メッキによってパターン化銅線を形成するためのシステムおよび方法

Country Status (5)

Country Link
US (2) US20070048447A1 (enExample)
JP (1) JP5043014B2 (enExample)
KR (1) KR101385419B1 (enExample)
TW (2) TWI352402B (enExample)
WO (1) WO2007028156A2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7297190B1 (en) * 2006-06-28 2007-11-20 Lam Research Corporation Plating solutions for electroless deposition of copper
US7306662B2 (en) * 2006-05-11 2007-12-11 Lam Research Corporation Plating solution for electroless deposition of copper
US7592259B2 (en) 2006-12-18 2009-09-22 Lam Research Corporation Methods and systems for barrier layer surface passivation
US7752996B2 (en) * 2006-05-11 2010-07-13 Lam Research Corporation Apparatus for applying a plating solution for electroless deposition
US8298325B2 (en) * 2006-05-11 2012-10-30 Lam Research Corporation Electroless deposition from non-aqueous solutions
JP4755573B2 (ja) * 2006-11-30 2011-08-24 東京応化工業株式会社 処理装置および処理方法、ならびに表面処理治具
US8026605B2 (en) * 2006-12-14 2011-09-27 Lam Research Corporation Interconnect structure and method of manufacturing a damascene structure
US7749893B2 (en) * 2006-12-18 2010-07-06 Lam Research Corporation Methods and systems for low interfacial oxide contact between barrier and copper metallization
US7794530B2 (en) * 2006-12-22 2010-09-14 Lam Research Corporation Electroless deposition of cobalt alloys
US7521358B2 (en) * 2006-12-26 2009-04-21 Lam Research Corporation Process integration scheme to lower overall dielectric constant in BEoL interconnect structures
US8058164B2 (en) * 2007-06-04 2011-11-15 Lam Research Corporation Methods of fabricating electronic devices using direct copper plating
US8673769B2 (en) * 2007-06-20 2014-03-18 Lam Research Corporation Methods and apparatuses for three dimensional integrated circuits
US8877565B2 (en) * 2007-06-28 2014-11-04 Intel Corporation Method of forming a multilayer substrate core structure using sequential microvia laser drilling and substrate core structure formed according to the method
JP4971078B2 (ja) * 2007-08-30 2012-07-11 東京応化工業株式会社 表面処理装置
US20110052797A1 (en) * 2009-08-26 2011-03-03 International Business Machines Corporation Low Temperature Plasma-Free Method for the Nitridation of Copper
JP2011129568A (ja) * 2009-12-15 2011-06-30 Tdk Corp 電子部品の製造方法及び電子部品
JP2011134875A (ja) * 2009-12-24 2011-07-07 Tdk Corp 電子部品の製造方法
JP5492140B2 (ja) * 2011-04-28 2014-05-14 名古屋メッキ工業株式会社 高分子繊維材料のめっき方法及び高分子繊維材料の製造方法並びに被めっき用高分子繊維材料
EP2672520B1 (en) * 2012-06-06 2018-07-04 SEMIKRON Elektronik GmbH & Co. KG Method for electroless deposition of a copper layer, electroless deposited copper layer and semiconductor component comprising said electroless deposited copper layer
US9865501B2 (en) * 2013-03-06 2018-01-09 Lam Research Corporation Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer
US9469912B2 (en) * 2014-04-21 2016-10-18 Lam Research Corporation Pretreatment method for photoresist wafer processing
KR20170106300A (ko) 2014-11-12 2017-09-20 온토스 이큅먼트 시스템즈 포토레지스트 표면 및 금속 표면을 준비하는 동시 친수화: 방법, 시스템, 및 생성물
US10535566B2 (en) 2016-04-28 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10443146B2 (en) 2017-03-30 2019-10-15 Lam Research Corporation Monitoring surface oxide on seed layers during electroplating
US10425704B2 (en) * 2017-10-24 2019-09-24 Landis+Gyr Innovations, Inc. Radio and advanced metering device
JP7063101B2 (ja) * 2018-05-11 2022-05-09 住友電気工業株式会社 プリント配線板及びプリント配線板の製造方法
WO2020255739A1 (ja) * 2019-06-17 2020-12-24 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7735686B2 (ja) * 2021-05-24 2025-09-09 三菱瓦斯化学株式会社 無電解銅めっき用組成物および無電解銅めっき方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56120943A (en) * 1980-02-29 1981-09-22 Hitachi Ltd Manufacture of ph-detecting electrode
US4565575A (en) * 1984-11-02 1986-01-21 Shiplay Company Inc. Apparatus and method for automatically maintaining an electroless plating bath
JPS61149479A (ja) * 1984-12-25 1986-07-08 Toshiba Corp 化学銅めつき廃液の処理方法
JP3089961B2 (ja) * 1994-12-27 2000-09-18 松下電工株式会社 セラミック基板の銅メタライズ法
US5741626A (en) * 1996-04-15 1998-04-21 Motorola, Inc. Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC)
US6424068B2 (en) * 1997-06-27 2002-07-23 Asahi Kogaku Kogyo Kabushiki Kaisha Galvano mirror unit
US6117784A (en) * 1997-11-12 2000-09-12 International Business Machines Corporation Process for integrated circuit wiring
US6204168B1 (en) * 1998-02-02 2001-03-20 Applied Materials, Inc. Damascene structure fabricated using a layer of silicon-based photoresist material
JPH11236678A (ja) * 1998-02-20 1999-08-31 Fuji Film Olin Kk 金属薄膜パターン形成装置
JPH11236679A (ja) * 1998-02-20 1999-08-31 Fuji Film Olin Kk 金属薄膜パターン形成装置
JP3032503B2 (ja) * 1998-07-10 2000-04-17 松下電器産業株式会社 半導体装置の製造方法
EP0991115A1 (en) * 1998-09-28 2000-04-05 STMicroelectronics S.r.l. Process for the definition of openings in a dielectric layer
JP2001011643A (ja) * 1999-06-25 2001-01-16 Inoac Corp 不導体のめっき方法
JP2001085397A (ja) * 1999-09-10 2001-03-30 Toshiba Corp パターン形成方法
US6559070B1 (en) * 2000-04-11 2003-05-06 Applied Materials, Inc. Mesoporous silica films with mobile ion gettering and accelerated processing
JP4895420B2 (ja) * 2000-08-10 2012-03-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7253124B2 (en) * 2000-10-20 2007-08-07 Texas Instruments Incorporated Process for defect reduction in electrochemical plating
US6790763B2 (en) * 2000-12-04 2004-09-14 Ebara Corporation Substrate processing method
JP3772973B2 (ja) * 2000-12-11 2006-05-10 株式会社荏原製作所 無電解めっき装置
JP2002237486A (ja) * 2001-02-08 2002-08-23 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
KR100421036B1 (ko) * 2001-03-13 2004-03-03 삼성전자주식회사 웨이퍼 처리 장치 및 이를 이용한 웨이퍼 처리 방법
JP4595237B2 (ja) * 2001-04-27 2010-12-08 日立金属株式会社 銅めっき液および銅めっき方法
JP2002348673A (ja) * 2001-05-24 2002-12-04 Learonal Japan Inc ホルムアルデヒドを使用しない無電解銅めっき方法および該方法に使用される無電解銅めっき液
JP2002361787A (ja) 2001-06-04 2002-12-18 Kansai Paint Co Ltd 高意匠性金属サイディング構造
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6875474B2 (en) * 2001-11-06 2005-04-05 Georgia Tech Research Corporation Electroless copper plating solutions and methods of use thereof
JP3847611B2 (ja) 2001-11-20 2006-11-22 日新製鋼株式会社 耐跡残り性，加工性に優れたクリア塗装ステンレス鋼板
US6645567B2 (en) * 2001-12-19 2003-11-11 Intel Corporation Electroless plating bath composition and method of using
JP2004115885A (ja) * 2002-09-27 2004-04-15 Tokyo Electron Ltd 無電解メッキ方法
US7293571B2 (en) * 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7153400B2 (en) * 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
JP3864138B2 (ja) * 2002-12-19 2006-12-27 株式会社荏原製作所 基板の銅配線形成方法
US7256120B2 (en) * 2004-12-28 2007-08-14 Taiwan Semiconductor Manufacturing Co. Method to eliminate plating copper defect
US20060246699A1 (en) * 2005-03-18 2006-11-02 Weidman Timothy W Process for electroless copper deposition on a ruthenium seed
CN1901162B (zh) * 2005-07-22 2011-04-20 米辑电子股份有限公司 连续电镀制作线路组件的方法及线路组件结构
US20070099422A1 (en) * 2005-10-28 2007-05-03 Kapila Wijekoon Process for electroless copper deposition
IL175011A (en) * 2006-04-20 2011-09-27 Amitech Ltd Coreless cavity substrates for chip packaging and their fabrication
US7682972B2 (en) * 2006-06-01 2010-03-23 Amitec-Advanced Multilayer Interconnect Technoloiges Ltd. Advanced multilayer coreless support structures and method for their fabrication
US9469912B2 (en) * 2014-04-21 2016-10-18 Lam Research Corporation Pretreatment method for photoresist wafer processing

Similar Documents

Publication Publication Date Title
JP2009507135A5 (enExample)
TWI887218B (zh) 使用自限制及溶解度限制反應之濕式原子層蝕刻用的處理系統及平台
JP5043014B2 (ja) 無電解銅メッキによってパターン化銅線を形成するためのシステムおよび方法
CN113016056B (zh) 使用自限制和溶解度受限反应的原子层湿法蚀刻
JP2022507400A5 (enExample)
JP2008524851A5 (enExample)
JP2006049798A5 (enExample)
US20250069947A1 (en) Semiconductor device with composite barrier structure and method for fabricating the same
CN102509697A (zh) 一种制备超细线条的方法
JP2025519414A (ja) 非等温湿式原子層エッチングの方法
WO2005091796A3 (en) Method and system for treating a hard mask to improve etch characteristics
US9679770B2 (en) Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
JP2010027952A (ja) 半導体装置の製造方法
US20230317508A1 (en) Method for fabricating semiconductor device with pre-cleaning treatment
CN101567312A (zh) 制备ono结构的方法
JP2007531322A (ja) 互いに適合性を有する薬剤を用いた基板のブラシスクラブおよび近接洗浄乾燥手順、近接基板前処理手順、並びに、その方法、装置、および、システム
CN112670175B (zh) 半导体结构的制作方法
JP2006019552A (ja) プラズマ処理装置およびそれを用いた半導体装置の製造方法
JP4078434B2 (ja) 基板の処理方法及びその装置
TWI276915B (en) Photo-resist stripping process and equipment
CN103177955B (zh) 一种实现可剥离侧壁的制程方法
CN114582722B (zh) 半导体器件及其形成方法
JP2008147434A (ja) 半導体装置の製造方法
CN107492484A (zh) Sab层图形结构的制造方法
JP2005086080A (ja) 半導体装置の製造方法