TWI352402B - Method for forming copper on substrate - Google Patents
Method for forming copper on substrate Download PDFInfo
- Publication number
- TWI352402B TWI352402B TW095132131A TW95132131A TWI352402B TW I352402 B TWI352402 B TW I352402B TW 095132131 A TW095132131 A TW 095132131A TW 95132131 A TW95132131 A TW 95132131A TW I352402 B TWI352402 B TW I352402B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- copper
- layer
- solution
- chamber
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 77
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 58
- 229910052802 copper Inorganic materials 0.000 title claims description 47
- 239000010949 copper Substances 0.000 title claims description 47
- 238000000034 method Methods 0.000 title claims description 22
- 238000007772 electroless plating Methods 0.000 claims description 23
- 230000003197 catalytic effect Effects 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 7
- 229910000831 Steel Inorganic materials 0.000 claims description 6
- 239000010959 steel Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000003002 pH adjusting agent Substances 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000013329 compounding Methods 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 238000012545 processing Methods 0.000 description 42
- 239000000243 solution Substances 0.000 description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 26
- 239000008367 deionised water Substances 0.000 description 23
- 229910021641 deionized water Inorganic materials 0.000 description 23
- 239000012530 fluid Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 11
- 238000012546 transfer Methods 0.000 description 10
- 230000005499 meniscus Effects 0.000 description 8
- 238000001035 drying Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XTUSEBKMEQERQV-UHFFFAOYSA-N propan-2-ol;hydrate Chemical compound O.CC(C)O XTUSEBKMEQERQV-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000012487 rinsing solution Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 241000282376 Panthera tigris Species 0.000 description 1
- 235000006040 Prunus persica var persica Nutrition 0.000 description 1
- 240000006413 Prunus persica var. persica Species 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 210000004262 dental pulp cavity Anatomy 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000003229 sclerosing agent Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000012085 test solution Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1605—Process or apparatus coating on selected surface areas by masking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
- C23C18/1669—Agitation, e.g. air introduction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1882—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0571—Dual purpose resist, e.g. etch resist used as solder resist, solder resist used as plating resist
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/072—Electroless plating, e.g. finish plating or initial plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/087—Using a reactive gas
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing Of Printed Wiring (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71349405P | 2005-08-31 | 2005-08-31 | |
| US11/461,415 US20070048447A1 (en) | 2005-08-31 | 2006-07-31 | System and method for forming patterned copper lines through electroless copper plating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200721380A TW200721380A (en) | 2007-06-01 |
| TWI352402B true TWI352402B (en) | 2011-11-11 |
Family
ID=37804525
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095132131A TWI352402B (en) | 2005-08-31 | 2006-08-31 | Method for forming copper on substrate |
| TW099115332A TWI419258B (zh) | 2005-08-31 | 2006-08-31 | 以無電鍍銅方式形成圖案化銅線的系統及方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099115332A TWI419258B (zh) | 2005-08-31 | 2006-08-31 | 以無電鍍銅方式形成圖案化銅線的系統及方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20070048447A1 (enExample) |
| JP (1) | JP5043014B2 (enExample) |
| KR (1) | KR101385419B1 (enExample) |
| TW (2) | TWI352402B (enExample) |
| WO (1) | WO2007028156A2 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7297190B1 (en) * | 2006-06-28 | 2007-11-20 | Lam Research Corporation | Plating solutions for electroless deposition of copper |
| US7306662B2 (en) * | 2006-05-11 | 2007-12-11 | Lam Research Corporation | Plating solution for electroless deposition of copper |
| US7592259B2 (en) | 2006-12-18 | 2009-09-22 | Lam Research Corporation | Methods and systems for barrier layer surface passivation |
| US7752996B2 (en) * | 2006-05-11 | 2010-07-13 | Lam Research Corporation | Apparatus for applying a plating solution for electroless deposition |
| US8298325B2 (en) * | 2006-05-11 | 2012-10-30 | Lam Research Corporation | Electroless deposition from non-aqueous solutions |
| JP4755573B2 (ja) * | 2006-11-30 | 2011-08-24 | 東京応化工業株式会社 | 処理装置および処理方法、ならびに表面処理治具 |
| US8026605B2 (en) * | 2006-12-14 | 2011-09-27 | Lam Research Corporation | Interconnect structure and method of manufacturing a damascene structure |
| US7749893B2 (en) * | 2006-12-18 | 2010-07-06 | Lam Research Corporation | Methods and systems for low interfacial oxide contact between barrier and copper metallization |
| US7794530B2 (en) * | 2006-12-22 | 2010-09-14 | Lam Research Corporation | Electroless deposition of cobalt alloys |
| US7521358B2 (en) * | 2006-12-26 | 2009-04-21 | Lam Research Corporation | Process integration scheme to lower overall dielectric constant in BEoL interconnect structures |
| US8058164B2 (en) * | 2007-06-04 | 2011-11-15 | Lam Research Corporation | Methods of fabricating electronic devices using direct copper plating |
| US8673769B2 (en) * | 2007-06-20 | 2014-03-18 | Lam Research Corporation | Methods and apparatuses for three dimensional integrated circuits |
| US8877565B2 (en) * | 2007-06-28 | 2014-11-04 | Intel Corporation | Method of forming a multilayer substrate core structure using sequential microvia laser drilling and substrate core structure formed according to the method |
| JP4971078B2 (ja) * | 2007-08-30 | 2012-07-11 | 東京応化工業株式会社 | 表面処理装置 |
| US20110052797A1 (en) * | 2009-08-26 | 2011-03-03 | International Business Machines Corporation | Low Temperature Plasma-Free Method for the Nitridation of Copper |
| JP2011129568A (ja) * | 2009-12-15 | 2011-06-30 | Tdk Corp | 電子部品の製造方法及び電子部品 |
| JP2011134875A (ja) * | 2009-12-24 | 2011-07-07 | Tdk Corp | 電子部品の製造方法 |
| JP5492140B2 (ja) * | 2011-04-28 | 2014-05-14 | 名古屋メッキ工業株式会社 | 高分子繊維材料のめっき方法及び高分子繊維材料の製造方法並びに被めっき用高分子繊維材料 |
| EP2672520B1 (en) * | 2012-06-06 | 2018-07-04 | SEMIKRON Elektronik GmbH & Co. KG | Method for electroless deposition of a copper layer, electroless deposited copper layer and semiconductor component comprising said electroless deposited copper layer |
| US9865501B2 (en) * | 2013-03-06 | 2018-01-09 | Lam Research Corporation | Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer |
| US9469912B2 (en) * | 2014-04-21 | 2016-10-18 | Lam Research Corporation | Pretreatment method for photoresist wafer processing |
| KR20170106300A (ko) | 2014-11-12 | 2017-09-20 | 온토스 이큅먼트 시스템즈 | 포토레지스트 표면 및 금속 표면을 준비하는 동시 친수화: 방법, 시스템, 및 생성물 |
| US10535566B2 (en) | 2016-04-28 | 2020-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
| US10443146B2 (en) | 2017-03-30 | 2019-10-15 | Lam Research Corporation | Monitoring surface oxide on seed layers during electroplating |
| US10425704B2 (en) * | 2017-10-24 | 2019-09-24 | Landis+Gyr Innovations, Inc. | Radio and advanced metering device |
| JP7063101B2 (ja) * | 2018-05-11 | 2022-05-09 | 住友電気工業株式会社 | プリント配線板及びプリント配線板の製造方法 |
| WO2020255739A1 (ja) * | 2019-06-17 | 2020-12-24 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| JP7735686B2 (ja) * | 2021-05-24 | 2025-09-09 | 三菱瓦斯化学株式会社 | 無電解銅めっき用組成物および無電解銅めっき方法 |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56120943A (en) * | 1980-02-29 | 1981-09-22 | Hitachi Ltd | Manufacture of ph-detecting electrode |
| US4565575A (en) * | 1984-11-02 | 1986-01-21 | Shiplay Company Inc. | Apparatus and method for automatically maintaining an electroless plating bath |
| JPS61149479A (ja) * | 1984-12-25 | 1986-07-08 | Toshiba Corp | 化学銅めつき廃液の処理方法 |
| JP3089961B2 (ja) * | 1994-12-27 | 2000-09-18 | 松下電工株式会社 | セラミック基板の銅メタライズ法 |
| US5741626A (en) * | 1996-04-15 | 1998-04-21 | Motorola, Inc. | Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC) |
| US6424068B2 (en) * | 1997-06-27 | 2002-07-23 | Asahi Kogaku Kogyo Kabushiki Kaisha | Galvano mirror unit |
| US6117784A (en) * | 1997-11-12 | 2000-09-12 | International Business Machines Corporation | Process for integrated circuit wiring |
| US6204168B1 (en) * | 1998-02-02 | 2001-03-20 | Applied Materials, Inc. | Damascene structure fabricated using a layer of silicon-based photoresist material |
| JPH11236678A (ja) * | 1998-02-20 | 1999-08-31 | Fuji Film Olin Kk | 金属薄膜パターン形成装置 |
| JPH11236679A (ja) * | 1998-02-20 | 1999-08-31 | Fuji Film Olin Kk | 金属薄膜パターン形成装置 |
| JP3032503B2 (ja) * | 1998-07-10 | 2000-04-17 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| EP0991115A1 (en) * | 1998-09-28 | 2000-04-05 | STMicroelectronics S.r.l. | Process for the definition of openings in a dielectric layer |
| JP2001011643A (ja) * | 1999-06-25 | 2001-01-16 | Inoac Corp | 不導体のめっき方法 |
| JP2001085397A (ja) * | 1999-09-10 | 2001-03-30 | Toshiba Corp | パターン形成方法 |
| US6559070B1 (en) * | 2000-04-11 | 2003-05-06 | Applied Materials, Inc. | Mesoporous silica films with mobile ion gettering and accelerated processing |
| JP4895420B2 (ja) * | 2000-08-10 | 2012-03-14 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US7253124B2 (en) * | 2000-10-20 | 2007-08-07 | Texas Instruments Incorporated | Process for defect reduction in electrochemical plating |
| US6790763B2 (en) * | 2000-12-04 | 2004-09-14 | Ebara Corporation | Substrate processing method |
| JP3772973B2 (ja) * | 2000-12-11 | 2006-05-10 | 株式会社荏原製作所 | 無電解めっき装置 |
| JP2002237486A (ja) * | 2001-02-08 | 2002-08-23 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
| KR100421036B1 (ko) * | 2001-03-13 | 2004-03-03 | 삼성전자주식회사 | 웨이퍼 처리 장치 및 이를 이용한 웨이퍼 처리 방법 |
| JP4595237B2 (ja) * | 2001-04-27 | 2010-12-08 | 日立金属株式会社 | 銅めっき液および銅めっき方法 |
| JP2002348673A (ja) * | 2001-05-24 | 2002-12-04 | Learonal Japan Inc | ホルムアルデヒドを使用しない無電解銅めっき方法および該方法に使用される無電解銅めっき液 |
| JP2002361787A (ja) | 2001-06-04 | 2002-12-18 | Kansai Paint Co Ltd | 高意匠性金属サイディング構造 |
| US7049226B2 (en) * | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US6875474B2 (en) * | 2001-11-06 | 2005-04-05 | Georgia Tech Research Corporation | Electroless copper plating solutions and methods of use thereof |
| JP3847611B2 (ja) | 2001-11-20 | 2006-11-22 | 日新製鋼株式会社 | 耐跡残り性，加工性に優れたクリア塗装ステンレス鋼板 |
| US6645567B2 (en) * | 2001-12-19 | 2003-11-11 | Intel Corporation | Electroless plating bath composition and method of using |
| JP2004115885A (ja) * | 2002-09-27 | 2004-04-15 | Tokyo Electron Ltd | 無電解メッキ方法 |
| US7293571B2 (en) * | 2002-09-30 | 2007-11-13 | Lam Research Corporation | Substrate proximity processing housing and insert for generating a fluid meniscus |
| US7153400B2 (en) * | 2002-09-30 | 2006-12-26 | Lam Research Corporation | Apparatus and method for depositing and planarizing thin films of semiconductor wafers |
| JP3864138B2 (ja) * | 2002-12-19 | 2006-12-27 | 株式会社荏原製作所 | 基板の銅配線形成方法 |
| US7256120B2 (en) * | 2004-12-28 | 2007-08-14 | Taiwan Semiconductor Manufacturing Co. | Method to eliminate plating copper defect |
| US20060246699A1 (en) * | 2005-03-18 | 2006-11-02 | Weidman Timothy W | Process for electroless copper deposition on a ruthenium seed |
| CN1901162B (zh) * | 2005-07-22 | 2011-04-20 | 米辑电子股份有限公司 | 连续电镀制作线路组件的方法及线路组件结构 |
| US20070099422A1 (en) * | 2005-10-28 | 2007-05-03 | Kapila Wijekoon | Process for electroless copper deposition |
| IL175011A (en) * | 2006-04-20 | 2011-09-27 | Amitech Ltd | Coreless cavity substrates for chip packaging and their fabrication |
| US7682972B2 (en) * | 2006-06-01 | 2010-03-23 | Amitec-Advanced Multilayer Interconnect Technoloiges Ltd. | Advanced multilayer coreless support structures and method for their fabrication |
| US9469912B2 (en) * | 2014-04-21 | 2016-10-18 | Lam Research Corporation | Pretreatment method for photoresist wafer processing |
-
2006
- 2006-07-31 US US11/461,415 patent/US20070048447A1/en not_active Abandoned
- 2006-08-31 TW TW095132131A patent/TWI352402B/zh active
- 2006-08-31 KR KR1020087004988A patent/KR101385419B1/ko active Active
- 2006-08-31 JP JP2008529370A patent/JP5043014B2/ja active Active
- 2006-08-31 TW TW099115332A patent/TWI419258B/zh active
- 2006-08-31 WO PCT/US2006/034555 patent/WO2007028156A2/en not_active Ceased
-
2014
- 2014-10-17 US US14/517,675 patent/US20150034589A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| TW201041091A (en) | 2010-11-16 |
| WO2007028156A2 (en) | 2007-03-08 |
| KR101385419B1 (ko) | 2014-04-25 |
| TWI419258B (zh) | 2013-12-11 |
| TW200721380A (en) | 2007-06-01 |
| US20150034589A1 (en) | 2015-02-05 |
| JP2009507135A (ja) | 2009-02-19 |
| KR20080041226A (ko) | 2008-05-09 |
| JP5043014B2 (ja) | 2012-10-10 |
| WO2007028156A3 (en) | 2009-05-22 |
| US20070048447A1 (en) | 2007-03-01 |
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