JP2009507135A - 無電解銅メッキによってパターン化銅線を形成するためのシステムおよび方法 - Google Patents
無電解銅メッキによってパターン化銅線を形成するためのシステムおよび方法 Download PDFInfo
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
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- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
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Abstract
【選択図】図1
Description
Claims (20)
- 基板の上に銅を形成するための方法であって、
銅源溶液を混合器に供給する工程と、
還元溶液を前記混合器に供給する工程と、
前記銅源溶液と前記還元溶液とを混合して、約6.5より大きいpHを有するメッキ溶液を形成する工程と、
前記メッキ溶液を前記基板に供給する工程と、
を備え、
前記基板は触媒層を備え、
前記メッキ溶液を前記基板に供給する工程は、前記触媒層の上に銅を形成する工程を備える、方法。 - 請求項1に記載の方法であって、前記メッキ溶液は、前記メッキ溶液を前記基板に供給するのと実質的に同時に形成される、方法。
- 請求項1に記載の方法であって、前記メッキ溶液は、約7.2から約7.8の間のpHを有する、方法。
- 請求項1に記載の方法であって、さらに、前記触媒の上に銅を形成した後に、前記メッキ溶液を廃棄する工程を備える、方法。
- 請求項1に記載の方法であって、前記基板は、パターン化フォトレジスト層を備え、前記パターン化フォトレジスト層は、前記触媒層の第1の部分を露出させ、前記メッキ溶液を前記基板に供給する工程は、前記触媒層の前記第1の部分の上に銅を形成する工程を備える、方法。
- 請求項5に記載の方法であって、さらに、
前記メッキ溶液を前記基板から除去する工程と、
前記基板をリンスする工程と、
前記基板を乾燥する工程と、
を備える、方法。 - 請求項6に記載の方法であって、さらに、
前記パターン化フォトレジストを除去する工程であって、前記触媒層の第2の部分を露出させる、工程と、
前記触媒層の前記第2の部分を除去する工程と、
を備える、方法。 - 請求項5に記載の方法であって、前記メッキ溶液は、保護されていないフォトレジストに適合する、方法。
- 請求項1に記載の方法であって、前記触媒層の上に形成された前記銅は、実質的に元素銅であり、前記触媒層の上に形成された前記銅は、実質的に水素含有物を含まない、方法。
- 請求項1に記載の方法であって、前記触媒層の上に形成された前記銅は、毎分約500オングストロームよりも大きい速さで形成される、方法。
- 請求項1に記載の方法であって、前記銅源溶液は、
酸化銅源と、
錯化剤と、
pH調整剤と、
ハロゲン化イオンと、
を備える、方法。 - 基板の上にパターン化銅構造を形成するための方法であって、
基板を受け入れる工程であって、前記基板は、
前記基板の上に形成された触媒層と、
前記触媒層の上に形成され、前記触媒層の第1の部分を露出させ、前記触媒層の第2の部分を覆うパターン化フォトレジスト層と、を備える、工程と、
銅源溶液を混合器に供給する工程と、
還元溶液を前記混合器に供給する工程と、
前記銅源溶液と前記還元溶液とを混合して、約7.2から約7.8の間のpHを有するメッキ溶液を形成する工程と、
前記メッキ溶液を前記基板に供給する工程と、
を備え、
前記メッキ溶液を前記基板に供給する工程は、前記触媒層の前記第1の部分の上に銅を形成する工程を備える、方法。 - 処理ツールであって、
低圧処理チャンバと、
大気圧処理チャンバと、
前記低圧処理チャンバと前記大気圧処理チャンバとの各々に接続された移送チャンバであって、制御された環境を備え、前記低圧処理チャンバから前記大気圧処理チャンバへ基板を移送する際に制御された環境を提供する、移送チャンバと、
前記低圧処理チャンバと、前記大気圧処理チャンバと、前記移送チャンバとに接続された制御部であって、前記低圧処理チャンバと、前記大気圧処理チャンバと、前記移送チャンバとの各々を制御するためのロジックを備える、制御部と、
を備える、処理ツール。 - 請求項13に記載の処理ツールであって、前記低圧処理チャンバは、1または複数のプラズマエッチング/除去チャンバを含む2以上の低圧処理チャンバを含み、前記大気圧処理チャンバは、銅メッキチャンバを含む、処理ツール。
- 請求項14に記載の処理ツールであって、前記銅メッキチャンバは、混合器を備える、処理ツール。
- 請求項14に記載の処理ツールであって、前記プラズマチャンバは、ダウンストリームプラズマチャンバである、処理ツール。
- 請求項14に記載の処理ツールであって、前記エッチング/除去チャンバは、湿式処理チャンバである、処理ツール。
- 請求項13に記載の処理ツールであって、前記移送チャンバは、入力/出力モジュールを備える、処理ツール。
- 請求項13に記載の処理ツールであって、前記制御部は、レシピを備え、
前記レシピは、
パターン化基板を前記銅メッキチャンバ内にロードするためのロジックと、
銅源溶液を前記混合器に供給するためのロジックと、
還元溶液を前記混合器に供給するためのロジックと、
前記銅源溶液と前記還元溶液とを混合して、約6.5より大きいpHを有するメッキ溶液を形成するためのロジックと、
前記メッキ溶液を前記パターン化基板に供給するためのロジックと、
を備え、
前記パターン化基板は触媒層を備え、前記メッキ溶液を前記基板に供給することは、前記触媒層の上に銅を形成することを含む、処理ツール。 - 請求項19に記載の処理ツールであって、前記パターン化基板は、前記触媒層の上に形成されたパターン化フォトレジスト層を備え、前記パターン化フォトレジスト層は、前記触媒層の第1の部分を露出させ、前記触媒層の第2の部分を覆う、処理ツール。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US71349405P | 2005-08-31 | 2005-08-31 | |
US60/713,494 | 2005-08-31 | ||
US11/461,415 US20070048447A1 (en) | 2005-08-31 | 2006-07-31 | System and method for forming patterned copper lines through electroless copper plating |
US11/461,415 | 2006-07-31 | ||
PCT/US2006/034555 WO2007028156A2 (en) | 2005-08-31 | 2006-08-31 | System and method for forming patterned copper lines through electroless copper plating |
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Publication Number | Publication Date |
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JP2009507135A true JP2009507135A (ja) | 2009-02-19 |
JP2009507135A5 JP2009507135A5 (ja) | 2010-11-25 |
JP5043014B2 JP5043014B2 (ja) | 2012-10-10 |
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JP2008529370A Active JP5043014B2 (ja) | 2005-08-31 | 2006-08-31 | 無電解銅メッキによってパターン化銅線を形成するためのシステムおよび方法 |
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US (2) | US20070048447A1 (ja) |
JP (1) | JP5043014B2 (ja) |
KR (1) | KR101385419B1 (ja) |
TW (2) | TWI352402B (ja) |
WO (1) | WO2007028156A2 (ja) |
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JP2011129568A (ja) * | 2009-12-15 | 2011-06-30 | Tdk Corp | 電子部品の製造方法及び電子部品 |
JP2011134875A (ja) * | 2009-12-24 | 2011-07-07 | Tdk Corp | 電子部品の製造方法 |
JP2012233227A (ja) * | 2011-04-28 | 2012-11-29 | Nagoya Plating Co Ltd | 高分子繊維材料のめっき方法及び高分子繊維材料の製造方法並びに被めっき用高分子繊維材料 |
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WO2016077645A1 (en) * | 2014-11-12 | 2016-05-19 | Ontos Equipment Systems | Simultaneous hydrophilization of photoresist surface and metal surface preparation: methods, systems, and products |
US11208732B2 (en) | 2017-03-30 | 2021-12-28 | Lam Research Corporation | Monitoring surface oxide on seed layers during electroplating |
JP2019197851A (ja) * | 2018-05-11 | 2019-11-14 | 住友電気工業株式会社 | プリント配線板及びプリント配線板の製造方法 |
JP7063101B2 (ja) | 2018-05-11 | 2022-05-09 | 住友電気工業株式会社 | プリント配線板及びプリント配線板の製造方法 |
JPWO2020255739A1 (ja) * | 2019-06-17 | 2020-12-24 | ||
JP7262582B2 (ja) | 2019-06-17 | 2023-04-21 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
Also Published As
Publication number | Publication date |
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US20150034589A1 (en) | 2015-02-05 |
JP5043014B2 (ja) | 2012-10-10 |
TW201041091A (en) | 2010-11-16 |
US20070048447A1 (en) | 2007-03-01 |
WO2007028156A3 (en) | 2009-05-22 |
TW200721380A (en) | 2007-06-01 |
TWI419258B (zh) | 2013-12-11 |
TWI352402B (en) | 2011-11-11 |
KR101385419B1 (ko) | 2014-04-25 |
WO2007028156A2 (en) | 2007-03-08 |
KR20080041226A (ko) | 2008-05-09 |
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