JP2022176166A - 半導体装置、表示装置、及び電子機器 - Google Patents

半導体装置、表示装置、及び電子機器 Download PDF

Info

Publication number
JP2022176166A
JP2022176166A JP2022078958A JP2022078958A JP2022176166A JP 2022176166 A JP2022176166 A JP 2022176166A JP 2022078958 A JP2022078958 A JP 2022078958A JP 2022078958 A JP2022078958 A JP 2022078958A JP 2022176166 A JP2022176166 A JP 2022176166A
Authority
JP
Japan
Prior art keywords
transistor
circuit
terminal
gate
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022078958A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022176166A5 (enExample
Inventor
肇 木村
Hajime Kimura
隆之 池田
Takayuki Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JP2022176166A publication Critical patent/JP2022176166A/ja
Publication of JP2022176166A5 publication Critical patent/JP2022176166A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266—Details of drivers for scan electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0404—Matrix technologies
    • G09G2300/0417—Special arrangements specific to the use of low carrier mobility technology
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G09G2300/0452—Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0876—Supplementary capacities in pixels having special driving circuits and electrodes instead of being connected to common electrode or ground; Use of additional capacitively coupled compensation electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/08—Details of timing specific for flat panels, other than clock recovery
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Shift Register Type Memory (AREA)
  • Control Of El Displays (AREA)
JP2022078958A 2021-05-13 2022-05-12 半導体装置、表示装置、及び電子機器 Pending JP2022176166A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021081532 2021-05-13
JP2021081532 2021-05-13

Publications (2)

Publication Number Publication Date
JP2022176166A true JP2022176166A (ja) 2022-11-25
JP2022176166A5 JP2022176166A5 (enExample) 2025-04-25

Family

ID=83998748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022078958A Pending JP2022176166A (ja) 2021-05-13 2022-05-12 半導体装置、表示装置、及び電子機器

Country Status (2)

Country Link
US (2) US11699391B2 (enExample)
JP (1) JP2022176166A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024228083A1 (ja) * 2023-05-01 2024-11-07 株式会社半導体エネルギー研究所 半導体装置、駆動回路及び表示装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10575376B2 (en) * 2004-02-25 2020-02-25 Lynk Labs, Inc. AC light emitting diode and AC LED drive methods and apparatus
KR20220043463A (ko) * 2020-09-29 2022-04-05 에스케이하이닉스 주식회사 이미지 센싱 장치
US11763722B1 (en) * 2023-04-06 2023-09-19 Voxel Inc Flip chip space pixel arrangement structure, pixel multiplexing method and system, apparatus and storage medium

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953985A (en) 1996-01-18 1999-09-21 Tohoku Ricoh Co., Ltd. Stencil printer
JP2000036385A (ja) 1998-07-21 2000-02-02 Sony Corp 有機ｅｌディスプレイの製造方法
JP2000113982A (ja) 1998-10-08 2000-04-21 Sony Corp 有機ｅｌディスプレイの製造方法
US6617186B2 (en) 2000-09-25 2003-09-09 Dai Nippon Printing Co., Ltd. Method for producing electroluminescent element
JP4869516B2 (ja) 2001-08-10 2012-02-08 株式会社半導体エネルギー研究所 半導体装置
JP4578032B2 (ja) 2001-08-22 2010-11-10 大日本印刷株式会社 エレクトロルミネッセント素子の製造方法
JP4339103B2 (ja) 2002-12-25 2009-10-07 株式会社半導体エネルギー研究所 半導体装置及び表示装置
CN1754316B (zh) 2003-02-28 2011-07-13 株式会社半导体能源研究所 半导体装置及其驱动方法
WO2005027085A1 (en) 2003-09-12 2005-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
KR100830296B1 (ko) * 2006-09-22 2008-05-19 삼성에스디아이 주식회사 주사구동부, 주사신호의 구동방법 및 그를 이용한유기전계발광표시장치
JP2008098106A (ja) 2006-10-16 2008-04-24 Dainippon Printing Co Ltd 有機エレクトロルミネッセンス素子の製造方法
JP2008147072A (ja) 2006-12-12 2008-06-26 Dainippon Printing Co Ltd 有機エレクトロルミネッセンス素子の製造方法
US20080238297A1 (en) 2007-03-29 2008-10-02 Masuyuki Oota Organic el display and method of manufacturing the same
JP2008251270A (ja) 2007-03-29 2008-10-16 Dainippon Printing Co Ltd 有機エレクトロルミネッセンス素子およびその製造方法
US8232947B2 (en) 2008-11-14 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5491833B2 (ja) 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 半導体装置
US8872751B2 (en) 2009-03-26 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having interconnected transistors and electronic device including the same
JP5751762B2 (ja) 2009-05-21 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
KR101929726B1 (ko) 2009-07-18 2018-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
TWI559501B (zh) 2009-08-07 2016-11-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR101988341B1 (ko) 2009-09-04 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
TW202507679A (zh) 2009-09-10 2025-02-16 日商半導體能源研究所股份有限公司 半導體裝置和顯示裝置
KR102151495B1 (ko) 2010-02-23 2020-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011145738A1 (en) 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
KR101928897B1 (ko) 2010-08-27 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
JP5839896B2 (ja) 2010-09-09 2016-01-06 株式会社半導体エネルギー研究所 表示装置
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
WO2012090771A1 (ja) 2010-12-27 2012-07-05 シャープ株式会社 蒸着膜の形成方法及び表示装置の製造方法
WO2012090770A1 (ja) 2010-12-27 2012-07-05 シャープ株式会社 蒸着膜の形成方法及び表示装置の製造方法
JP5933897B2 (ja) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 半導体装置
US8809879B2 (en) 2011-04-07 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and a method of manufacturing light-emitting device
KR101920374B1 (ko) 2011-04-27 2018-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 그 제작 방법
JP6016407B2 (ja) 2011-04-28 2016-10-26 キヤノン株式会社 有機ｅｌ表示装置の製造方法
JP6116149B2 (ja) 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
JP6080438B2 (ja) 2011-09-30 2017-02-15 キヤノン株式会社 有機ｅｌ装置の製造方法
JP2013077494A (ja) 2011-09-30 2013-04-25 Canon Inc 発光装置の製造方法
JP2013084576A (ja) 2011-09-30 2013-05-09 Canon Inc 有機ｅｌ表示装置の製造方法
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
JP2014011084A (ja) 2012-06-29 2014-01-20 Canon Inc 有機ｅｌ装置の製造方法
US8999738B2 (en) 2012-06-29 2015-04-07 Canon Kabushiki Kaisha Method for manufacturing organic electroluminescent display apparatus
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2014120218A (ja) 2012-12-13 2014-06-30 Canon Inc 有機ｅｌ表示装置の製造方法
JP2014135251A (ja) 2013-01-11 2014-07-24 Canon Inc 有機ｅｌ表示装置の製造方法
JP2014232568A (ja) 2013-05-28 2014-12-11 キヤノン株式会社 有機ｅｌ装置
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
TWI663820B (zh) 2013-08-21 2019-06-21 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
KR20160036597A (ko) 2013-08-29 2016-04-04 후지필름 가부시키가이샤 유기층을 리소그래피로 패터닝하기 위한 방법
JP6242121B2 (ja) 2013-09-02 2017-12-06 株式会社ジャパンディスプレイ 発光素子表示装置及び発光素子表示装置の製造方法
JP6282428B2 (ja) 2013-09-09 2018-02-21 株式会社ジャパンディスプレイ 有機エレクトロルミネッセンス表示装置及びその製造方法
JP6114670B2 (ja) 2013-09-19 2017-04-12 株式会社ジャパンディスプレイ 有機エレクトロルミネッセンス表示装置及び有機エレクトロルミネッセンス表示装置の製造方法
JP2015115178A (ja) 2013-12-11 2015-06-22 株式会社ジャパンディスプレイ 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
US10483293B2 (en) 2014-02-27 2019-11-19 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device, and module and electronic appliance including the same
US20150349000A1 (en) 2014-05-29 2015-12-03 Qualcomm Mems Technologies, Inc. Fabrication of transistor with high density storage capacitor
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6653315B2 (ja) 2014-08-01 2020-02-26 オーソゴナル，インコーポレイテッド 有機電子デバイスのフォトリソグラフィック・パターニング
US9766517B2 (en) 2014-09-05 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Display device and display module
WO2016055894A1 (en) 2014-10-06 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2016197494A (ja) 2015-04-02 2016-11-24 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
JP2017010000A (ja) 2015-04-13 2017-01-12 株式会社半導体エネルギー研究所 表示装置
JP6577224B2 (ja) 2015-04-23 2019-09-18 株式会社ジャパンディスプレイ 表示装置
JP6839659B2 (ja) 2015-06-29 2021-03-10 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ 有機層の高分解能パターニングのための方法
US10032921B2 (en) 2015-07-31 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
SG10201607278TA (en) 2015-09-18 2017-04-27 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic device
JP6864456B2 (ja) 2015-10-15 2021-04-28 株式会社半導体エネルギー研究所 半導体装置
US10297331B2 (en) 2015-10-30 2019-05-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9741400B2 (en) 2015-11-05 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, and method for operating the semiconductor device
JP2017091946A (ja) 2015-11-16 2017-05-25 株式会社ジャパンディスプレイ 表示装置および表示装置の製造方法
JP6811084B2 (ja) 2015-12-18 2021-01-13 株式会社半導体エネルギー研究所 半導体装置
KR102613318B1 (ko) 2015-12-28 2023-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10957237B2 (en) 2015-12-28 2021-03-23 Semiconductor Energy Laboratory Co., Ltd. Circuit, semiconductor device, display device, electronic device, and driving method of circuit
US9953695B2 (en) 2015-12-29 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and semiconductor wafer
US10115741B2 (en) 2016-02-05 2018-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10250247B2 (en) 2016-02-10 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
WO2019102293A1 (en) 2017-11-24 2019-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and dynamic logic circuit
JP2019179696A (ja) 2018-03-30 2019-10-17 株式会社ジャパンディスプレイ 有機ｅｌ表示装置および有機ｅｌ表示装置の製造方法
KR102706759B1 (ko) * 2018-12-12 2024-09-20 삼성디스플레이 주식회사 스캔 구동부 및 이를 포함하는 표시 장치
FR3091035B1 (fr) 2018-12-19 2020-12-04 Commissariat Energie Atomique PROCEDE DE FABRICATION D’UN PIXEL D’UN MICRO-ECRAN A OLEDs
WO2020165686A1 (ja) 2019-02-15 2020-08-20 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
JP2020160305A (ja) 2019-03-27 2020-10-01 株式会社ジャパンディスプレイ フレキシブルパネル装置
JPWO2021105828A1 (enExample) 2019-11-29 2021-06-03
KR20220116481A (ko) 2019-12-13 2022-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 및 전자 기기

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024228083A1 (ja) * 2023-05-01 2024-11-07 株式会社半導体エネルギー研究所 半導体装置、駆動回路及び表示装置

Also Published As

Publication number Publication date
US20220366845A1 (en) 2022-11-17
US20230298517A1 (en) 2023-09-21
US12482413B2 (en) 2025-11-25
US11699391B2 (en) 2023-07-11

Similar Documents

Publication Publication Date Title
US12482413B2 (en) Semiconductor device, display apparatus, and electronic device
US12482415B2 (en) Display apparatus and electronic device
US20250037654A1 (en) Electronic device
KR20230116807A (ko) 표시 장치의 제작 방법
US20240237435A1 (en) Semiconductor Device, Display Apparatus, and Electronic Device
US12200950B2 (en) Electronic device
WO2022248971A1 (ja) 表示装置、及び表示装置の作製方法
US12183287B2 (en) Semiconductor device, display apparatus, and electronic device
US12449898B2 (en) Electronic device
US20240412689A1 (en) Display apparatus and electronic device
US20240276833A1 (en) Display device and display system
US20240431178A1 (en) Display Apparatus, Electronic Device, And Operation Method Of Light-Emitting Apparatus
US12416970B2 (en) Electronic device and operation method of the electronic device
CN117337455A (zh) 半导体装置、显示装置及电子设备
US20240172488A1 (en) Display apparatus, display module, electronic device, and method for manufacturing display apparatus
US20250008818A1 (en) Display apparatus and method for manufacturing the display apparatus
US20240074224A1 (en) Display apparatus, display module, electronic device, and method of manufacturing display apparatus
CN119968775A (zh) 半导体装置、显示装置及电子设备
WO2023084354A1 (ja) 電子装置
JP2025139661A (ja) 表示装置、画像データの処理方法
CN118235194A (zh) 电子设备

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250417

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250417