JP2022148177A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 65
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 91
- 229920005591 polysilicon Polymers 0.000 claims description 28
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000011084 recovery Methods 0.000 abstract description 13
- 229910021332 silicide Inorganic materials 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 108091006146 Channels Proteins 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Abstract
Description
図1は、第1実施形態の半導体装置1の模式平面図である。なお、図1では、説明をわかりやすくするために特徴的な部分のみを示している。
図2は、図1におけるA-A線に沿った模式断面図である。
図3は、第2実施形態の半導体装置2の模式断面図である。
図4は、第3実施形態の半導体装置3の模式断面図である。
図5は、第4実施形態の半導体装置4の模式断面図である。
Claims (9)
- 上部電極と、
下部電極と、
前記上部電極と前記下部電極との間に位置し、前記下部電極に接する第1導電型のシリコン基板と、
前記シリコン基板と前記上部電極との間に位置するシリコン層であって、セル領域と、側面と、前記セル領域と前記側面との間に位置する終端領域とを有するシリコン層と、
前記シリコン層の前記セル領域に設けられたゲート電極と、
前記ゲート電極と前記シリコン層との間に設けられたゲート絶縁膜と、
前記シリコン層の前記終端領域に埋め込まれ、前記シリコン層に接し、前記シリコン層よりも結晶グレイン密度が高い多結晶シリコン部であって、重金属を含む多結晶シリコン部と、を備え、
前記シリコン層は、前記セル領域及び前記終端領域に設けられ、前記シリコン基板よりも第1導電型不純物濃度が低く、前記多結晶シリコン部に含まれる重金属と同じ種類の重金属を含む第1導電型のドリフト層と、前記セル領域の前記ドリフト層上に設けられ、前記上部電極に接する第2導電型のベース層と、前記ベース層上に設けられ、前記上部電極に接し、前記ドリフト層よりも第1導電型不純物濃度が高い第1導電型のソース層とを有し、
前記終端領域は、前記上部電極に接する前記ベース層、前記上部電極に接する前記ソース層、及び前記ゲート電極を含まない半導体装置。 - 前記多結晶シリコン部は、前記セル領域を連続して囲んでいる請求項1に記載の半導体装置。
- 前記ゲート電極及び前記ゲート絶縁膜は、前記セル領域の前記シリコン層内に埋め込まれた構造部内に設けられ、
前記多結晶シリコン部と前記下部電極との間の距離は、前記構造部と前記下部電極との間の距離よりも短い請求項1または2に記載の半導体装置。 - 前記構造部は、前記上部電極または前記ゲート電極と電気的に接続されたフィールドプレート電極をさらに含み、
前記フィールドプレート電極は、前記ゲート電極と前記シリコン基板との間にある請求項3に記載の半導体装置。 - 前記シリコン層は、前記ドリフト層と前記多結晶シリコン部との間に設けられ、前記ドリフト層よりも第1導電型不純物濃度が高い第1導電型のチャネルストッパをさらに有する請求項1~4のいずれか1つに記載の半導体装置。
- 前記セル領域の前記ドリフト層内の重金属濃度、及び前記セル領域と前記多結晶シリコン部との間の領域の前記ドリフト層内の重金属濃度は、前記多結晶シリコン部と前記側面との間の領域の前記ドリフト層内の重金属濃度よりも高い請求項1~5のいずれか1つに記載の半導体装置。
- 前記重金属は、PtまたはAuである請求項1~6のいずれか1つに記載の半導体装置。
- 前記多結晶シリコン部は、第1の多結晶シリコン部と、前記第1の多結晶シリコン部と前記側面との間に位置する第2の多結晶シリコン部とを有する請求項1~7のいずれか1つに記載の半導体装置。
- 前記ゲート電極及び前記ゲート絶縁膜は、前記セル領域の前記シリコン層内に埋め込まれた構造部内に設けられ、
前記第1の多結晶シリコン部と前記下部電極との間の距離は、前記構造部と前記下部電極との間の距離よりも長い請求項8に記載の半導体装置。
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JP2021049759A JP7506628B2 (ja) | 2021-03-24 | 2021-03-24 | 半導体装置 |
CN202111001629.4A CN115132844A (zh) | 2021-03-24 | 2021-08-30 | 半导体装置 |
US17/471,739 US11942539B2 (en) | 2021-03-24 | 2021-09-10 | Semiconductor device |
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JP2021049759A JP7506628B2 (ja) | 2021-03-24 | 2021-03-24 | 半導体装置 |
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JP2008124346A (ja) * | 2006-11-14 | 2008-05-29 | Toshiba Corp | 電力用半導体素子 |
JP5083885B2 (ja) | 2007-11-20 | 2012-11-28 | 日本インター株式会社 | Jbsおよびmosfet |
JP2011054813A (ja) | 2009-09-03 | 2011-03-17 | Toyota Motor Corp | 縦型半導体装置 |
JP5190485B2 (ja) | 2010-04-02 | 2013-04-24 | 株式会社豊田中央研究所 | 半導体装置 |
JP5449094B2 (ja) * | 2010-09-07 | 2014-03-19 | 株式会社東芝 | 半導体装置 |
CN102870201B (zh) | 2010-11-10 | 2016-01-13 | 丰田自动车株式会社 | 半导体装置的制造方法 |
JP2012204395A (ja) | 2011-03-23 | 2012-10-22 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2014120656A (ja) * | 2012-12-18 | 2014-06-30 | Toshiba Corp | 半導体装置 |
DE102014114683B4 (de) | 2014-10-09 | 2016-08-04 | Infineon Technologies Ag | Verfahren zur herstellung eines halbleiter-wafers mit einer niedrigen konzentration von interstitiellem sauerstoff |
JP6018163B2 (ja) | 2014-12-02 | 2016-11-02 | トヨタ自動車株式会社 | 半導体装置 |
DE102015105016A1 (de) * | 2015-03-31 | 2016-10-06 | Infineon Technologies Ag | Halbleiterbauteil mit Kanalstopper und Verfahren zur Herstellung desselben |
JP6398861B2 (ja) | 2015-05-12 | 2018-10-03 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP6677613B2 (ja) | 2016-09-15 | 2020-04-08 | 株式会社東芝 | 半導体装置 |
JP7187787B2 (ja) | 2018-03-15 | 2022-12-13 | 富士電機株式会社 | 半導体装置 |
US11538911B2 (en) * | 2018-05-08 | 2022-12-27 | Ipower Semiconductor | Shielded trench devices |
JP7189848B2 (ja) | 2019-08-07 | 2022-12-14 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP7345354B2 (ja) * | 2019-10-25 | 2023-09-15 | 三菱電機株式会社 | 半導体装置 |
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