JP2022142782A5 - - Google Patents

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Publication number
JP2022142782A5
JP2022142782A5 JP2022040869A JP2022040869A JP2022142782A5 JP 2022142782 A5 JP2022142782 A5 JP 2022142782A5 JP 2022040869 A JP2022040869 A JP 2022040869A JP 2022040869 A JP2022040869 A JP 2022040869A JP 2022142782 A5 JP2022142782 A5 JP 2022142782A5
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JP
Japan
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semiconductor
semiconductor device
layer
semiconductor layer
contact layer
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Pending
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JP2022040869A
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English (en)
Japanese (ja)
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JP2022142782A (ja
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Priority claimed from US17/203,293 external-priority patent/US11894489B2/en
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Publication of JP2022142782A publication Critical patent/JP2022142782A/ja
Publication of JP2022142782A5 publication Critical patent/JP2022142782A5/ja
Pending legal-status Critical Current

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JP2022040869A 2021-03-16 2022-03-16 半導体素子、該半導体素子を含む半導体装置及び表示パネル Pending JP2022142782A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/203,293 US11894489B2 (en) 2021-03-16 2021-03-16 Semiconductor device, semiconductor component and display panel including the same
US17/203293 2021-03-16

Publications (2)

Publication Number Publication Date
JP2022142782A JP2022142782A (ja) 2022-09-30
JP2022142782A5 true JP2022142782A5 (https=) 2025-03-19

Family

ID=83114734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022040869A Pending JP2022142782A (ja) 2021-03-16 2022-03-16 半導体素子、該半導体素子を含む半導体装置及び表示パネル

Country Status (6)

Country Link
US (2) US11894489B2 (https=)
JP (1) JP2022142782A (https=)
KR (1) KR20220129490A (https=)
CN (1) CN115084182A (https=)
DE (1) DE102022105994A1 (https=)
TW (1) TW202239017A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115172557A (zh) * 2022-08-03 2022-10-11 天津三安光电有限公司 发光二极管，发光二极管封装体和发光装置
CN116130572A (zh) * 2023-04-18 2023-05-16 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP4581540B2 (ja) * 2003-06-30 2010-11-17 日亜化学工業株式会社 半導体発光素子とそれを用いた発光装置
JP5255759B2 (ja) * 2005-11-14 2013-08-07 パロ・アルト・リサーチ・センター・インコーポレーテッド 半導体デバイス用超格子歪緩衝層
JP2008034822A (ja) * 2006-06-28 2008-02-14 Nichia Chem Ind Ltd 半導体発光素子
TWI378573B (en) * 2007-10-31 2012-12-01 Young Lighting Technology Corp Light emitting diode package
KR101221281B1 (ko) * 2008-03-13 2013-01-11 쇼와 덴코 가부시키가이샤 반도체 발광 소자 및 그 제조 방법
JP5334601B2 (ja) * 2009-01-21 2013-11-06 株式会社東芝 半導体発光ダイオード素子及び半導体発光装置
US8592847B2 (en) 2011-04-15 2013-11-26 Epistar Corporation Light-emitting device
KR20140146467A (ko) 2013-06-17 2014-12-26 한국전자통신연구원 발광 다이오드 및 그 제조 방법
KR102512027B1 (ko) * 2016-03-08 2023-03-21 엘지이노텍 주식회사 반도체 소자, 표시패널, 표시장치 및 표시패널 제조방법
KR101763072B1 (ko) * 2016-06-09 2017-08-04 고려대학교 산학협력단 광 추출 효율 및 전류 주입 효율 개선을 위한 led 소자
CN108336194A (zh) * 2018-01-11 2018-07-27 太原理工大学 一种led电极的制备方法
KR102552655B1 (ko) 2018-08-10 2023-07-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지 및 광원 모듈
KR102616245B1 (ko) * 2018-10-05 2023-12-21 삼성디스플레이 주식회사 디스플레이 장치
JP7603260B2 (ja) * 2019-03-29 2024-12-20 パナソニックＩｐマネジメント株式会社 光デバイス、光電変換装置、および燃料生成装置
US11152540B2 (en) * 2019-07-29 2021-10-19 Lextar Electronics Corporation Light emitting diode structure and method of manufacturing thereof
TWI715437B (zh) 2020-02-12 2021-01-01 光鋐科技股份有限公司 紫外光發光二極體及其製造方法
CN115315820A (zh) * 2020-03-20 2022-11-08 传感器电子技术股份有限公司 光学损失减少的光电子器件

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