JP2005108917A5 - - Google Patents

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Publication number
JP2005108917A5
JP2005108917A5 JP2003336765A JP2003336765A JP2005108917A5 JP 2005108917 A5 JP2005108917 A5 JP 2005108917A5 JP 2003336765 A JP2003336765 A JP 2003336765A JP 2003336765 A JP2003336765 A JP 2003336765A JP 2005108917 A5 JP2005108917 A5 JP 2005108917A5
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JP
Japan
Prior art keywords
layer
convex
flat
semiconductor laser
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003336765A
Other languages
English (en)
Japanese (ja)
Other versions
JP4286097B2 (ja
JP2005108917A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003336765A priority Critical patent/JP4286097B2/ja
Priority claimed from JP2003336765A external-priority patent/JP4286097B2/ja
Publication of JP2005108917A publication Critical patent/JP2005108917A/ja
Publication of JP2005108917A5 publication Critical patent/JP2005108917A5/ja
Application granted granted Critical
Publication of JP4286097B2 publication Critical patent/JP4286097B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003336765A 2003-09-29 2003-09-29 半導体レーザ素子および半導体レーザ装置 Expired - Fee Related JP4286097B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003336765A JP4286097B2 (ja) 2003-09-29 2003-09-29 半導体レーザ素子および半導体レーザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003336765A JP4286097B2 (ja) 2003-09-29 2003-09-29 半導体レーザ素子および半導体レーザ装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008285969A Division JP4883536B2 (ja) 2008-11-06 2008-11-06 半導体レーザ素子および半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2005108917A JP2005108917A (ja) 2005-04-21
JP2005108917A5 true JP2005108917A5 (https=) 2005-10-27
JP4286097B2 JP4286097B2 (ja) 2009-06-24

Family

ID=34532769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003336765A Expired - Fee Related JP4286097B2 (ja) 2003-09-29 2003-09-29 半導体レーザ素子および半導体レーザ装置

Country Status (1)

Country Link
JP (1) JP4286097B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4726572B2 (ja) * 2005-08-09 2011-07-20 三洋電機株式会社 半導体レーザ装置
US7655953B2 (en) 2004-08-31 2010-02-02 Sanyo Electric Co., Ltd. Semiconductor laser apparatus
JP2007042944A (ja) * 2005-08-04 2007-02-15 Rohm Co Ltd 窒化物半導体素子の製法
JP5098166B2 (ja) * 2005-12-12 2012-12-12 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JP5082504B2 (ja) * 2006-03-31 2012-11-28 日亜化学工業株式会社 発光素子及び発光素子の製造方法
JP2011009610A (ja) 2009-06-29 2011-01-13 Sharp Corp 窒化物半導体レーザ素子及びウェハ
US8564010B2 (en) * 2011-08-04 2013-10-22 Toshiba Techno Center Inc. Distributed current blocking structures for light emitting diodes

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