JP2009027205A5 - - Google Patents

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Publication number
JP2009027205A5
JP2009027205A5 JP2008285969A JP2008285969A JP2009027205A5 JP 2009027205 A5 JP2009027205 A5 JP 2009027205A5 JP 2008285969 A JP2008285969 A JP 2008285969A JP 2008285969 A JP2008285969 A JP 2008285969A JP 2009027205 A5 JP2009027205 A5 JP 2009027205A5
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JP
Japan
Prior art keywords
layer
current blocking
convex portion
blocking layer
semiconductor laser
Prior art date
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Granted
Application number
JP2008285969A
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English (en)
Japanese (ja)
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JP4883536B2 (ja
JP2009027205A (ja
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Publication date
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Priority to JP2008285969A priority Critical patent/JP4883536B2/ja
Priority claimed from JP2008285969A external-priority patent/JP4883536B2/ja
Publication of JP2009027205A publication Critical patent/JP2009027205A/ja
Publication of JP2009027205A5 publication Critical patent/JP2009027205A5/ja
Application granted granted Critical
Publication of JP4883536B2 publication Critical patent/JP4883536B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2008285969A 2008-11-06 2008-11-06 半導体レーザ素子および半導体レーザ装置 Expired - Lifetime JP4883536B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008285969A JP4883536B2 (ja) 2008-11-06 2008-11-06 半導体レーザ素子および半導体レーザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008285969A JP4883536B2 (ja) 2008-11-06 2008-11-06 半導体レーザ素子および半導体レーザ装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2003336765A Division JP4286097B2 (ja) 2003-09-29 2003-09-29 半導体レーザ素子および半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2009027205A JP2009027205A (ja) 2009-02-05
JP2009027205A5 true JP2009027205A5 (https=) 2010-03-25
JP4883536B2 JP4883536B2 (ja) 2012-02-22

Family

ID=40398646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008285969A Expired - Lifetime JP4883536B2 (ja) 2008-11-06 2008-11-06 半導体レーザ素子および半導体レーザ装置

Country Status (1)

Country Link
JP (1) JP4883536B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010206071A (ja) * 2009-03-05 2010-09-16 Sony Corp 半導体レーザ素子
JP2013021022A (ja) * 2011-07-07 2013-01-31 Sumitomo Electric Ind Ltd 半導体レーザ素子

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0728102B2 (ja) * 1988-12-08 1995-03-29 松下電器産業株式会社 半導体レーザおよびその製造方法
US5088099A (en) * 1990-12-20 1992-02-11 At&T Bell Laboratories Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence
JPH04291781A (ja) * 1991-03-20 1992-10-15 Fujitsu Ltd 光半導体装置及びその製造方法
KR960014732B1 (ko) * 1992-12-22 1996-10-19 양승택 Rwg형 반도체 레이저장치 및 제조방법
JPH08111565A (ja) * 1994-10-12 1996-04-30 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子および製造方法
JPH08220358A (ja) * 1995-02-09 1996-08-30 Hitachi Ltd 導波路型光素子
JPH11145558A (ja) * 1997-11-05 1999-05-28 Hitachi Ltd 半導体光素子、送受信モジュールおよび光通信システム
JP3864634B2 (ja) * 1998-09-25 2007-01-10 三菱化学株式会社 半導体発光装置及びその製造方法
WO2001039342A1 (fr) * 1999-11-22 2001-05-31 Sony Corporation Element electroluminescent a semi-conducteur
JP2003518758A (ja) * 1999-12-20 2003-06-10 コーニング レイザートロン インコーポレイテッド リッジが広いポンプレーザ
JP2003069153A (ja) * 2001-08-29 2003-03-07 Hitachi Ltd 半導体光デバイス及び集積型光半導体装置

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