JP2004342719A5 - - Google Patents

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Publication number
JP2004342719A5
JP2004342719A5 JP2003135408A JP2003135408A JP2004342719A5 JP 2004342719 A5 JP2004342719 A5 JP 2004342719A5 JP 2003135408 A JP2003135408 A JP 2003135408A JP 2003135408 A JP2003135408 A JP 2003135408A JP 2004342719 A5 JP2004342719 A5 JP 2004342719A5
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JP
Japan
Prior art keywords
semiconductor laser
conductivity type
cladding layer
layer
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003135408A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004342719A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003135408A priority Critical patent/JP2004342719A/ja
Priority claimed from JP2003135408A external-priority patent/JP2004342719A/ja
Priority to US10/845,666 priority patent/US7221692B2/en
Priority to TW093113784A priority patent/TWI236790B/zh
Publication of JP2004342719A publication Critical patent/JP2004342719A/ja
Publication of JP2004342719A5 publication Critical patent/JP2004342719A5/ja
Pending legal-status Critical Current

Links

JP2003135408A 2003-05-14 2003-05-14 半導体レーザ装置及びその製造方法 Pending JP2004342719A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003135408A JP2004342719A (ja) 2003-05-14 2003-05-14 半導体レーザ装置及びその製造方法
US10/845,666 US7221692B2 (en) 2003-05-14 2004-05-13 Semiconductor laser device and its manufacturing method
TW093113784A TWI236790B (en) 2003-05-14 2004-05-14 Semiconductor laser device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003135408A JP2004342719A (ja) 2003-05-14 2003-05-14 半導体レーザ装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2004342719A JP2004342719A (ja) 2004-12-02
JP2004342719A5 true JP2004342719A5 (https=) 2005-06-23

Family

ID=33525679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003135408A Pending JP2004342719A (ja) 2003-05-14 2003-05-14 半導体レーザ装置及びその製造方法

Country Status (3)

Country Link
US (1) US7221692B2 (https=)
JP (1) JP2004342719A (https=)
TW (1) TWI236790B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060055696A (ko) * 2004-11-18 2006-05-24 삼성전기주식회사 반도체 레이저 제조방법
WO2006077766A1 (ja) * 2005-01-18 2006-07-27 Matsushita Electric Industrial Co., Ltd. 半導体レーザ装置及びその製造方法
KR100674835B1 (ko) * 2005-02-28 2007-01-26 삼성전기주식회사 다파장 반도체 레이저 제조방법
JP4782463B2 (ja) * 2005-04-14 2011-09-28 三菱電機株式会社 半導体レーザの製造方法
JP2007280989A (ja) * 2006-04-03 2007-10-25 Nec Electronics Corp 半導体レーザ及びその製造方法
JP2008021705A (ja) * 2006-07-11 2008-01-31 Nec Electronics Corp 自励発振型半導体レーザとその製造方法
JP5379002B2 (ja) * 2007-07-17 2013-12-25 株式会社Ｑｄレーザ 半導体レーザ及びその製造方法
JP5385526B2 (ja) * 2007-11-16 2014-01-08 ローム株式会社 半導体レーザ
CN101820136A (zh) * 2010-04-21 2010-09-01 中国科学院半导体研究所 高功率非对称宽波导980nm半导体激光器结构
WO2017001062A1 (de) * 2015-06-30 2017-01-05 Forschungsverbund Berlin E.V. Laserdiode mit verteilter rückkopplung und verfahren zur herstellung
JP6385633B1 (ja) * 2018-04-02 2018-09-05 三菱電機株式会社 半導体光素子、半導体光集積素子、および半導体光素子の製造方法
JP7156850B2 (ja) * 2018-08-02 2022-10-19 日本ルメンタム株式会社 半導体光素子及び光送受信モジュール
CN111286901A (zh) * 2020-02-28 2020-06-16 安徽豹子头服饰有限公司 一种袖口定型装置
JP6809655B1 (ja) * 2020-03-16 2021-01-06 三菱電機株式会社 半導体装置および半導体装置の製造方法
US12349528B2 (en) * 2021-10-25 2025-07-01 Meta Platforms Technologies, Llc Strain management of III-P micro-LED epitaxy towards higher efficiency and low bow
FR3152095B1 (fr) * 2023-08-10 2025-07-25 Commissariat Energie Atomique Procédé de réalisation de dispositifs optoélectroniques

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5065404A (en) * 1989-07-12 1991-11-12 Kabushiki Kaisha Toshiba Transverse-mode oscillation semiconductor laser device
US5255281A (en) * 1990-04-26 1993-10-19 Fujitsu Limited Semiconductor laser having double heterostructure
US5438585A (en) * 1994-05-31 1995-08-01 University Of New Mexico Unstable resonator semiconductor laser
US6118800A (en) * 1996-03-01 2000-09-12 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and cleaving method
JPH11274637A (ja) * 1998-03-20 1999-10-08 Pioneer Electron Corp 横結合分布帰還リッジ型半導体レーザ及びその製造方法
EP1120872B1 (en) 1998-10-07 2006-12-20 Sharp Kabushiki Kaisha Semiconductor laser
WO2000052795A1 (en) * 1999-02-26 2000-09-08 The Furukawa Electric Co., Ltd. Semiconductor light-emitting device
JP2001230494A (ja) * 2000-02-17 2001-08-24 Mitsubishi Electric Corp 半導体レーザ素子及びその製造方法
KR100378352B1 (ko) * 2000-12-20 2003-03-29 삼성전기주식회사 리지 웨이브 가이드를 구비하는 반도체 레이저 다이오드및 그 제조 방법
JP2004014569A (ja) 2002-06-03 2004-01-15 Toshiba Corp 半導体レーザ及びその製造方法

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