JP2011520270A5 - - Google Patents
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- Publication number
- JP2011520270A5 JP2011520270A5 JP2011507786A JP2011507786A JP2011520270A5 JP 2011520270 A5 JP2011520270 A5 JP 2011520270A5 JP 2011507786 A JP2011507786 A JP 2011507786A JP 2011507786 A JP2011507786 A JP 2011507786A JP 2011520270 A5 JP2011520270 A5 JP 2011520270A5
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- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- support
- contact
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 42
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 2
- 230000005855 radiation Effects 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008022942.3 | 2008-05-09 | ||
| DE102008022942A DE102008022942A1 (de) | 2008-05-09 | 2008-05-09 | Strahlungsemittierender Halbleiterchip |
| PCT/DE2009/000546 WO2009135457A1 (de) | 2008-05-09 | 2009-04-17 | Strahlungsemittierender halbleiterchip |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011520270A JP2011520270A (ja) | 2011-07-14 |
| JP2011520270A5 true JP2011520270A5 (https=) | 2012-05-10 |
| JP5479461B2 JP5479461B2 (ja) | 2014-04-23 |
Family
ID=41059547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011507786A Active JP5479461B2 (ja) | 2008-05-09 | 2009-04-17 | 放射を放出する半導体チップ |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8319250B2 (https=) |
| EP (1) | EP2274774B1 (https=) |
| JP (1) | JP5479461B2 (https=) |
| KR (1) | KR101590204B1 (https=) |
| CN (1) | CN102017143B (https=) |
| DE (1) | DE102008022942A1 (https=) |
| WO (1) | WO2009135457A1 (https=) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008022942A1 (de) * | 2008-05-09 | 2009-11-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
| DE102009006177A1 (de) * | 2008-11-28 | 2010-06-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
| DE102009053064A1 (de) * | 2009-11-13 | 2011-05-19 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements |
| KR100986560B1 (ko) * | 2010-02-11 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
| KR100999784B1 (ko) * | 2010-02-23 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
| DE102010024079B4 (de) | 2010-06-17 | 2025-08-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| KR101714039B1 (ko) * | 2010-07-01 | 2017-03-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템 |
| DE102010046792A1 (de) | 2010-09-28 | 2012-03-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
| KR101154320B1 (ko) | 2010-12-20 | 2012-06-13 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치 |
| DE102011011140A1 (de) | 2011-02-14 | 2012-08-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
| KR101766298B1 (ko) * | 2011-03-30 | 2017-08-08 | 삼성전자 주식회사 | 발광소자 및 그 제조방법 |
| DE102011016302B4 (de) * | 2011-04-07 | 2026-01-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
| CN102751431A (zh) * | 2011-04-18 | 2012-10-24 | 北京地调科技发展有限公司 | Led芯片及其制备方法 |
| US9299742B2 (en) | 2011-08-15 | 2016-03-29 | Micron Technology, Inc. | High-voltage solid-state transducers and associated systems and methods |
| US8723206B2 (en) | 2011-09-09 | 2014-05-13 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device with contact hole passing through active layer |
| EP2573827B1 (en) * | 2011-09-23 | 2018-04-18 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
| KR101827975B1 (ko) * | 2011-10-10 | 2018-03-29 | 엘지이노텍 주식회사 | 발광소자 |
| DE102011084363B4 (de) * | 2011-10-12 | 2022-12-22 | Pictiva Displays International Limited | Organische Leuchtdiode |
| DE102012108627B4 (de) * | 2012-09-14 | 2021-06-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische Halbleitervorrichtung und Trägerverbund |
| DE102012218457A1 (de) * | 2012-10-10 | 2014-04-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement und verfahren zu seiner herstellung |
| JP6071650B2 (ja) | 2013-03-01 | 2017-02-01 | スタンレー電気株式会社 | 半導体発光装置 |
| DE102013103409A1 (de) * | 2013-04-05 | 2014-10-09 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und optoelektronisches Modul |
| DE102013112881A1 (de) * | 2013-11-21 | 2015-05-21 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102015111487A1 (de) | 2015-07-15 | 2017-01-19 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| DE102015111485A1 (de) | 2015-07-15 | 2017-01-19 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
| US10263150B2 (en) * | 2016-05-10 | 2019-04-16 | Rohm Co., Ltd. | Semiconductor light emitting device capable of increasing luminous efficiency under a low applied current |
| CN107437542B (zh) * | 2017-07-31 | 2023-05-05 | 广东工业大学 | 一种紫外led芯片及其制备方法 |
| CN110176438B (zh) * | 2019-06-11 | 2021-06-08 | 厦门市三安光电科技有限公司 | 发光二极管 |
| EP4030494A1 (en) | 2021-01-19 | 2022-07-20 | Excellence Opto. Inc. | Vertical light emitting diode structure with high current dispersion and high reliability |
| US11469345B2 (en) | 2021-01-21 | 2022-10-11 | Excellence Opto. Inc. | Vertical light emitting diode structure with high current dispersion and high reliability |
| EP4060754B1 (en) | 2021-03-19 | 2023-08-23 | Excellence Opto. Inc. | Light-emitting diode grain structure with multiple contact points |
| US11569418B2 (en) | 2021-03-22 | 2023-01-31 | Excellence Opto. Inc. | Light-emitting diode grain structure with multiple contact points |
| US11869816B2 (en) | 2021-07-26 | 2024-01-09 | Excellence Opto. Inc. | LED package with multiple test pads and parallel circuit elements |
| EP4125126A1 (en) | 2021-07-28 | 2023-02-01 | Excellence Opto. Inc. | Led package with multiple test pads and parallel circuit elements |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US179914A (en) * | 1876-07-18 | Improvement in grates for brick-kilns | ||
| JPH11251644A (ja) * | 1998-02-27 | 1999-09-17 | Matsushita Electron Corp | 半導体発光装置 |
| DE19945134C2 (de) | 1999-09-21 | 2003-08-14 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Halbleiterbauelement hoher ESD-Festigkeit und Verfahren zu seiner Herstellung |
| TW492202B (en) * | 2001-06-05 | 2002-06-21 | South Epitaxy Corp | Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge |
| TW535307B (en) * | 2002-03-04 | 2003-06-01 | United Epitaxy Co Ltd | Package of light emitting diode with protective diode |
| JP4492093B2 (ja) * | 2003-10-27 | 2010-06-30 | ソニー株式会社 | 半導体発光装置とその製造方法 |
| DE102004005269B4 (de) * | 2003-11-28 | 2005-09-29 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Halbleiterbauelement mit einer Schutzdiode |
| US20050205883A1 (en) | 2004-03-19 | 2005-09-22 | Wierer Jonathan J Jr | Photonic crystal light emitting device |
| TWI260795B (en) * | 2004-03-22 | 2006-08-21 | South Epitaxy Corp | Flip chip type- light emitting diode package |
| CN1324719C (zh) * | 2004-04-01 | 2007-07-04 | 光磊科技股份有限公司 | 一种发光二极管 |
| CN100514635C (zh) * | 2004-04-09 | 2009-07-15 | 晶元光电股份有限公司 | 倒装式发光二极管封装结构 |
| US7825006B2 (en) * | 2004-05-06 | 2010-11-02 | Cree, Inc. | Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method |
| JP2005322722A (ja) * | 2004-05-07 | 2005-11-17 | Korai Kagi Kofun Yugenkoshi | 発光ダイオード |
| US7064353B2 (en) | 2004-05-26 | 2006-06-20 | Philips Lumileds Lighting Company, Llc | LED chip with integrated fast switching diode for ESD protection |
| CN1291493C (zh) * | 2004-07-02 | 2006-12-20 | 北京工业大学 | 用于发光管的抗静电保护电路 |
| CN100386891C (zh) * | 2004-07-02 | 2008-05-07 | 北京工业大学 | 高抗静电高效发光二极管及制作方法 |
| KR100576872B1 (ko) | 2004-09-17 | 2006-05-10 | 삼성전기주식회사 | 정전기 방전 방지기능을 갖는 질화물 반도체 발광소자 |
| JP4176703B2 (ja) * | 2004-11-25 | 2008-11-05 | 松下電器産業株式会社 | 半導体発光装置、照明装置、携帯通信機器、カメラ、及び製造方法 |
| KR20060062715A (ko) * | 2004-12-06 | 2006-06-12 | 삼성전기주식회사 | 정전방전 보호 다이오드를 구비한 GaN 계열 반도체발광 소자 |
| JP4697397B2 (ja) * | 2005-02-16 | 2011-06-08 | サンケン電気株式会社 | 複合半導体装置 |
| TWI257186B (en) * | 2005-09-29 | 2006-06-21 | Formosa Epitaxy Inc | Light-emitting diode chip |
| JP2007157926A (ja) * | 2005-12-02 | 2007-06-21 | Sanken Electric Co Ltd | 保護ダイオードを伴った半導体発光装置及びその製造方法 |
| JP4978014B2 (ja) * | 2006-01-30 | 2012-07-18 | サンケン電気株式会社 | 半導体発光装置及びその製造方法 |
| JP2007305844A (ja) * | 2006-05-12 | 2007-11-22 | Stanley Electric Co Ltd | 発光装置とその製造方法 |
| DE102007022947B4 (de) | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
| US7759670B2 (en) * | 2007-06-12 | 2010-07-20 | SemiLEDs Optoelectronics Co., Ltd. | Vertical LED with current guiding structure |
| KR20090022701A (ko) * | 2007-08-31 | 2009-03-04 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| DE102007061479A1 (de) * | 2007-12-20 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip mit Überspannungsschutz |
| DE102008022942A1 (de) * | 2008-05-09 | 2009-11-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
| DE102009006177A1 (de) * | 2008-11-28 | 2010-06-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
| US8084775B2 (en) * | 2010-03-16 | 2011-12-27 | Bridgelux, Inc. | Light sources with serially connected LED segments including current blocking diodes |
-
2008
- 2008-05-09 DE DE102008022942A patent/DE102008022942A1/de not_active Withdrawn
-
2009
- 2009-04-17 EP EP09741730.7A patent/EP2274774B1/de active Active
- 2009-04-17 KR KR1020107020193A patent/KR101590204B1/ko not_active Expired - Fee Related
- 2009-04-17 WO PCT/DE2009/000546 patent/WO2009135457A1/de not_active Ceased
- 2009-04-17 CN CN200980115327.0A patent/CN102017143B/zh active Active
- 2009-04-17 JP JP2011507786A patent/JP5479461B2/ja active Active
- 2009-04-17 US US12/991,864 patent/US8319250B2/en active Active
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