KR101590204B1 - 복사 방출 반도체칩 - Google Patents

복사 방출 반도체칩 Download PDF

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Publication number
KR101590204B1
KR101590204B1 KR1020107020193A KR20107020193A KR101590204B1 KR 101590204 B1 KR101590204 B1 KR 101590204B1 KR 1020107020193 A KR1020107020193 A KR 1020107020193A KR 20107020193 A KR20107020193 A KR 20107020193A KR 101590204 B1 KR101590204 B1 KR 101590204B1
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South Korea
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semiconductor
layer
carrier
semiconductor chip
contact portion
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English (en)
Korean (ko)
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KR20110006650A (ko
Inventor
패트릭 로드
루츠 호펠
칼 엔글
토니 알브레츠
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
KR1020107020193A 2008-05-09 2009-04-17 복사 방출 반도체칩 Expired - Fee Related KR101590204B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008022942.3 2008-05-09
DE102008022942A DE102008022942A1 (de) 2008-05-09 2008-05-09 Strahlungsemittierender Halbleiterchip

Publications (2)

Publication Number Publication Date
KR20110006650A KR20110006650A (ko) 2011-01-20
KR101590204B1 true KR101590204B1 (ko) 2016-02-12

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KR1020107020193A Expired - Fee Related KR101590204B1 (ko) 2008-05-09 2009-04-17 복사 방출 반도체칩

Country Status (7)

Country Link
US (1) US8319250B2 (https=)
EP (1) EP2274774B1 (https=)
JP (1) JP5479461B2 (https=)
KR (1) KR101590204B1 (https=)
CN (1) CN102017143B (https=)
DE (1) DE102008022942A1 (https=)
WO (1) WO2009135457A1 (https=)

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KR100999784B1 (ko) * 2010-02-23 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
DE102010024079B4 (de) 2010-06-17 2025-08-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
KR101714039B1 (ko) * 2010-07-01 2017-03-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
DE102010046792A1 (de) 2010-09-28 2012-03-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
KR101154320B1 (ko) 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
DE102011011140A1 (de) 2011-02-14 2012-08-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
KR101766298B1 (ko) * 2011-03-30 2017-08-08 삼성전자 주식회사 발광소자 및 그 제조방법
DE102011016302B4 (de) * 2011-04-07 2026-01-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
CN102751431A (zh) * 2011-04-18 2012-10-24 北京地调科技发展有限公司 Led芯片及其制备方法
US9299742B2 (en) 2011-08-15 2016-03-29 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
US8723206B2 (en) 2011-09-09 2014-05-13 Samsung Electronics Co., Ltd. Semiconductor light emitting device with contact hole passing through active layer
EP2573827B1 (en) * 2011-09-23 2018-04-18 Samsung Electronics Co., Ltd. Semiconductor light emitting device
KR101827975B1 (ko) * 2011-10-10 2018-03-29 엘지이노텍 주식회사 발광소자
DE102011084363B4 (de) * 2011-10-12 2022-12-22 Pictiva Displays International Limited Organische Leuchtdiode
DE102012108627B4 (de) * 2012-09-14 2021-06-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Halbleitervorrichtung und Trägerverbund
DE102012218457A1 (de) * 2012-10-10 2014-04-10 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zu seiner herstellung
JP6071650B2 (ja) 2013-03-01 2017-02-01 スタンレー電気株式会社 半導体発光装置
DE102013103409A1 (de) * 2013-04-05 2014-10-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und optoelektronisches Modul
DE102013112881A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102015111487A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102015111485A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US10263150B2 (en) * 2016-05-10 2019-04-16 Rohm Co., Ltd. Semiconductor light emitting device capable of increasing luminous efficiency under a low applied current
CN107437542B (zh) * 2017-07-31 2023-05-05 广东工业大学 一种紫外led芯片及其制备方法
CN110176438B (zh) * 2019-06-11 2021-06-08 厦门市三安光电科技有限公司 发光二极管
EP4030494A1 (en) 2021-01-19 2022-07-20 Excellence Opto. Inc. Vertical light emitting diode structure with high current dispersion and high reliability
US11469345B2 (en) 2021-01-21 2022-10-11 Excellence Opto. Inc. Vertical light emitting diode structure with high current dispersion and high reliability
EP4060754B1 (en) 2021-03-19 2023-08-23 Excellence Opto. Inc. Light-emitting diode grain structure with multiple contact points
US11569418B2 (en) 2021-03-22 2023-01-31 Excellence Opto. Inc. Light-emitting diode grain structure with multiple contact points
US11869816B2 (en) 2021-07-26 2024-01-09 Excellence Opto. Inc. LED package with multiple test pads and parallel circuit elements
EP4125126A1 (en) 2021-07-28 2023-02-01 Excellence Opto. Inc. Led package with multiple test pads and parallel circuit elements

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US20020179914A1 (en) 2001-06-05 2002-12-05 Jinn-Kong Sheu Group III-V element-based LED having flip-chip structure and ESD protection capacity
US20050205887A1 (en) 2004-03-22 2005-09-22 Shih-Chang Shei [flip chip light-emitting diode package]

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US20020179914A1 (en) 2001-06-05 2002-12-05 Jinn-Kong Sheu Group III-V element-based LED having flip-chip structure and ESD protection capacity
US20050205887A1 (en) 2004-03-22 2005-09-22 Shih-Chang Shei [flip chip light-emitting diode package]

Also Published As

Publication number Publication date
KR20110006650A (ko) 2011-01-20
US20110272728A1 (en) 2011-11-10
JP5479461B2 (ja) 2014-04-23
WO2009135457A1 (de) 2009-11-12
JP2011520270A (ja) 2011-07-14
US8319250B2 (en) 2012-11-27
EP2274774B1 (de) 2019-06-05
DE102008022942A1 (de) 2009-11-12
EP2274774A1 (de) 2011-01-19
CN102017143A (zh) 2011-04-13
CN102017143B (zh) 2014-07-09

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