CN102017143B - 辐射发射半导体芯片 - Google Patents

辐射发射半导体芯片 Download PDF

Info

Publication number
CN102017143B
CN102017143B CN200980115327.0A CN200980115327A CN102017143B CN 102017143 B CN102017143 B CN 102017143B CN 200980115327 A CN200980115327 A CN 200980115327A CN 102017143 B CN102017143 B CN 102017143B
Authority
CN
China
Prior art keywords
semiconductor
layer
carrier
contact
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200980115327.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN102017143A (zh
Inventor
帕特里克·罗德
卢茨·赫佩尔
卡尔·英格尔
托尼·阿尔布雷希特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102017143A publication Critical patent/CN102017143A/zh
Application granted granted Critical
Publication of CN102017143B publication Critical patent/CN102017143B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
CN200980115327.0A 2008-05-09 2009-04-17 辐射发射半导体芯片 Active CN102017143B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008022942.3 2008-05-09
DE102008022942A DE102008022942A1 (de) 2008-05-09 2008-05-09 Strahlungsemittierender Halbleiterchip
PCT/DE2009/000546 WO2009135457A1 (de) 2008-05-09 2009-04-17 Strahlungsemittierender halbleiterchip

Publications (2)

Publication Number Publication Date
CN102017143A CN102017143A (zh) 2011-04-13
CN102017143B true CN102017143B (zh) 2014-07-09

Family

ID=41059547

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980115327.0A Active CN102017143B (zh) 2008-05-09 2009-04-17 辐射发射半导体芯片

Country Status (7)

Country Link
US (1) US8319250B2 (https=)
EP (1) EP2274774B1 (https=)
JP (1) JP5479461B2 (https=)
KR (1) KR101590204B1 (https=)
CN (1) CN102017143B (https=)
DE (1) DE102008022942A1 (https=)
WO (1) WO2009135457A1 (https=)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008022942A1 (de) * 2008-05-09 2009-11-12 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102009006177A1 (de) * 2008-11-28 2010-06-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102009053064A1 (de) * 2009-11-13 2011-05-19 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100999784B1 (ko) * 2010-02-23 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
DE102010024079B4 (de) 2010-06-17 2025-08-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
KR101714039B1 (ko) * 2010-07-01 2017-03-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
DE102010046792A1 (de) 2010-09-28 2012-03-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
KR101154320B1 (ko) 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
DE102011011140A1 (de) 2011-02-14 2012-08-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
KR101766298B1 (ko) * 2011-03-30 2017-08-08 삼성전자 주식회사 발광소자 및 그 제조방법
DE102011016302B4 (de) * 2011-04-07 2026-01-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
CN102751431A (zh) * 2011-04-18 2012-10-24 北京地调科技发展有限公司 Led芯片及其制备方法
US9299742B2 (en) 2011-08-15 2016-03-29 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
US8723206B2 (en) 2011-09-09 2014-05-13 Samsung Electronics Co., Ltd. Semiconductor light emitting device with contact hole passing through active layer
EP2573827B1 (en) * 2011-09-23 2018-04-18 Samsung Electronics Co., Ltd. Semiconductor light emitting device
KR101827975B1 (ko) * 2011-10-10 2018-03-29 엘지이노텍 주식회사 발광소자
DE102011084363B4 (de) * 2011-10-12 2022-12-22 Pictiva Displays International Limited Organische Leuchtdiode
DE102012108627B4 (de) * 2012-09-14 2021-06-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Halbleitervorrichtung und Trägerverbund
DE102012218457A1 (de) * 2012-10-10 2014-04-10 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zu seiner herstellung
JP6071650B2 (ja) 2013-03-01 2017-02-01 スタンレー電気株式会社 半導体発光装置
DE102013103409A1 (de) * 2013-04-05 2014-10-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und optoelektronisches Modul
DE102013112881A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102015111487A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102015111485A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US10263150B2 (en) * 2016-05-10 2019-04-16 Rohm Co., Ltd. Semiconductor light emitting device capable of increasing luminous efficiency under a low applied current
CN107437542B (zh) * 2017-07-31 2023-05-05 广东工业大学 一种紫外led芯片及其制备方法
CN110176438B (zh) * 2019-06-11 2021-06-08 厦门市三安光电科技有限公司 发光二极管
EP4030494A1 (en) 2021-01-19 2022-07-20 Excellence Opto. Inc. Vertical light emitting diode structure with high current dispersion and high reliability
US11469345B2 (en) 2021-01-21 2022-10-11 Excellence Opto. Inc. Vertical light emitting diode structure with high current dispersion and high reliability
EP4060754B1 (en) 2021-03-19 2023-08-23 Excellence Opto. Inc. Light-emitting diode grain structure with multiple contact points
US11569418B2 (en) 2021-03-22 2023-01-31 Excellence Opto. Inc. Light-emitting diode grain structure with multiple contact points
US11869816B2 (en) 2021-07-26 2024-01-09 Excellence Opto. Inc. LED package with multiple test pads and parallel circuit elements
EP4125126A1 (en) 2021-07-28 2023-02-01 Excellence Opto. Inc. Led package with multiple test pads and parallel circuit elements

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US179914A (en) * 1876-07-18 Improvement in grates for brick-kilns
CN1564333A (zh) * 2004-04-01 2005-01-12 光磊科技股份有限公司 一种发光二极管
CN1588657A (zh) * 2004-07-02 2005-03-02 北京工业大学 高抗静电高效发光二极管及制作方法
CN1589087A (zh) * 2004-07-02 2005-03-02 北京工业大学 用于发光管的抗静电保护电路
EP1577958A1 (en) * 2004-03-19 2005-09-21 LumiLeds Lighting U.S., LLC Photonic crystal light emitting device
CN1681121A (zh) * 2004-04-09 2005-10-12 元砷光电科技股份有限公司 覆晶式发光二极管封装结构
US7105860B2 (en) * 2004-03-22 2006-09-12 Epitech Technology Corporation Flip chip light-emitting diode package

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251644A (ja) * 1998-02-27 1999-09-17 Matsushita Electron Corp 半導体発光装置
DE19945134C2 (de) 1999-09-21 2003-08-14 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement hoher ESD-Festigkeit und Verfahren zu seiner Herstellung
TW492202B (en) * 2001-06-05 2002-06-21 South Epitaxy Corp Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge
TW535307B (en) * 2002-03-04 2003-06-01 United Epitaxy Co Ltd Package of light emitting diode with protective diode
JP4492093B2 (ja) * 2003-10-27 2010-06-30 ソニー株式会社 半導体発光装置とその製造方法
DE102004005269B4 (de) * 2003-11-28 2005-09-29 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement mit einer Schutzdiode
US7825006B2 (en) * 2004-05-06 2010-11-02 Cree, Inc. Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method
JP2005322722A (ja) * 2004-05-07 2005-11-17 Korai Kagi Kofun Yugenkoshi 発光ダイオード
US7064353B2 (en) 2004-05-26 2006-06-20 Philips Lumileds Lighting Company, Llc LED chip with integrated fast switching diode for ESD protection
KR100576872B1 (ko) 2004-09-17 2006-05-10 삼성전기주식회사 정전기 방전 방지기능을 갖는 질화물 반도체 발광소자
JP4176703B2 (ja) * 2004-11-25 2008-11-05 松下電器産業株式会社 半導体発光装置、照明装置、携帯通信機器、カメラ、及び製造方法
KR20060062715A (ko) * 2004-12-06 2006-06-12 삼성전기주식회사 정전방전 보호 다이오드를 구비한 ＧａＮ 계열 반도체발광 소자
JP4697397B2 (ja) * 2005-02-16 2011-06-08 サンケン電気株式会社 複合半導体装置
TWI257186B (en) * 2005-09-29 2006-06-21 Formosa Epitaxy Inc Light-emitting diode chip
JP2007157926A (ja) * 2005-12-02 2007-06-21 Sanken Electric Co Ltd 保護ダイオードを伴った半導体発光装置及びその製造方法
JP4978014B2 (ja) * 2006-01-30 2012-07-18 サンケン電気株式会社 半導体発光装置及びその製造方法
JP2007305844A (ja) * 2006-05-12 2007-11-22 Stanley Electric Co Ltd 発光装置とその製造方法
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
KR20090022701A (ko) * 2007-08-31 2009-03-04 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102007061479A1 (de) * 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Leuchtdiodenchip mit Überspannungsschutz
DE102008022942A1 (de) * 2008-05-09 2009-11-12 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102009006177A1 (de) * 2008-11-28 2010-06-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
US8084775B2 (en) * 2010-03-16 2011-12-27 Bridgelux, Inc. Light sources with serially connected LED segments including current blocking diodes

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US179914A (en) * 1876-07-18 Improvement in grates for brick-kilns
EP1577958A1 (en) * 2004-03-19 2005-09-21 LumiLeds Lighting U.S., LLC Photonic crystal light emitting device
US7105860B2 (en) * 2004-03-22 2006-09-12 Epitech Technology Corporation Flip chip light-emitting diode package
CN1564333A (zh) * 2004-04-01 2005-01-12 光磊科技股份有限公司 一种发光二极管
CN1681121A (zh) * 2004-04-09 2005-10-12 元砷光电科技股份有限公司 覆晶式发光二极管封装结构
CN1588657A (zh) * 2004-07-02 2005-03-02 北京工业大学 高抗静电高效发光二极管及制作方法
CN1589087A (zh) * 2004-07-02 2005-03-02 北京工业大学 用于发光管的抗静电保护电路

Also Published As

Publication number Publication date
KR20110006650A (ko) 2011-01-20
US20110272728A1 (en) 2011-11-10
JP5479461B2 (ja) 2014-04-23
WO2009135457A1 (de) 2009-11-12
JP2011520270A (ja) 2011-07-14
US8319250B2 (en) 2012-11-27
KR101590204B1 (ko) 2016-02-12
EP2274774B1 (de) 2019-06-05
DE102008022942A1 (de) 2009-11-12
EP2274774A1 (de) 2011-01-19
CN102017143A (zh) 2011-04-13

Similar Documents

Publication Publication Date Title
CN102017143B (zh) 辐射发射半导体芯片
JP5511813B2 (ja) 静電放電に対する保護を有する放射放出半導体チップおよびその製造方法
CN102227807B (zh) 发射辐射的半导体芯片及其制造方法
US7649193B2 (en) Semiconductor body and semiconductor chip comprising a semiconductor body
CN105679902B (zh) 微型发光二极管
US20120223416A1 (en) Thin-film semiconductor component with protection diode structure and method for producing a thin-film semiconductor component
CN103069568B (zh) 光电子半导体芯片和用于制造光电子半导体芯片的方法
US8946761B2 (en) Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip
JP2013009013A (ja) オプトエレクトロニクス半導体チップ、オプトエレクトロニクスモジュールおよびオプトエレクトロニクス半導体チップの製造方法
JP2019009438A (ja) 赤外線発光ダイオード
KR100986440B1 (ko) 발광소자 및 그 제조방법
US8835949B2 (en) Three-terminal light emitting device (LED) with built-in electrostatic discharge (ESD) protection device
US20150076444A1 (en) Semiconductor light emitting element and light emitting device including the same
CN110383506A (zh) 发射辐射的半导体本体和半导体芯片
KR20100067441A (ko) 정전기 보호 기능을 갖는 수직구조 반도체 발광소자
US20140339498A1 (en) Radiation-emitting semiconductor chip
KR20160054331A (ko) 발광소자 및 이를 구비한 발광소자 패키지

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant