DE102008022942A1 - Strahlungsemittierender Halbleiterchip - Google Patents

Strahlungsemittierender Halbleiterchip Download PDF

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Publication number
DE102008022942A1
DE102008022942A1 DE102008022942A DE102008022942A DE102008022942A1 DE 102008022942 A1 DE102008022942 A1 DE 102008022942A1 DE 102008022942 A DE102008022942 A DE 102008022942A DE 102008022942 A DE102008022942 A DE 102008022942A DE 102008022942 A1 DE102008022942 A1 DE 102008022942A1
Authority
DE
Germany
Prior art keywords
semiconductor
layer
carrier
contact
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102008022942A
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German (de)
English (en)
Inventor
Patrick Rode
Lutz Dr. Höppel
Karl Dr. Engl
Tony Dr. Albrecht
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102008022942A priority Critical patent/DE102008022942A1/de
Priority to CN200980115327.0A priority patent/CN102017143B/zh
Priority to US12/991,864 priority patent/US8319250B2/en
Priority to PCT/DE2009/000546 priority patent/WO2009135457A1/de
Priority to KR1020107020193A priority patent/KR101590204B1/ko
Priority to EP09741730.7A priority patent/EP2274774B1/de
Priority to JP2011507786A priority patent/JP5479461B2/ja
Publication of DE102008022942A1 publication Critical patent/DE102008022942A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
DE102008022942A 2008-05-09 2008-05-09 Strahlungsemittierender Halbleiterchip Withdrawn DE102008022942A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE102008022942A DE102008022942A1 (de) 2008-05-09 2008-05-09 Strahlungsemittierender Halbleiterchip
CN200980115327.0A CN102017143B (zh) 2008-05-09 2009-04-17 辐射发射半导体芯片
US12/991,864 US8319250B2 (en) 2008-05-09 2009-04-17 Radiation-emitting semiconductor chip
PCT/DE2009/000546 WO2009135457A1 (de) 2008-05-09 2009-04-17 Strahlungsemittierender halbleiterchip
KR1020107020193A KR101590204B1 (ko) 2008-05-09 2009-04-17 복사 방출 반도체칩
EP09741730.7A EP2274774B1 (de) 2008-05-09 2009-04-17 Strahlungsemittierender halbleiterchip
JP2011507786A JP5479461B2 (ja) 2008-05-09 2009-04-17 放射を放出する半導体チップ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008022942A DE102008022942A1 (de) 2008-05-09 2008-05-09 Strahlungsemittierender Halbleiterchip

Publications (1)

Publication Number Publication Date
DE102008022942A1 true DE102008022942A1 (de) 2009-11-12

Family

ID=41059547

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008022942A Withdrawn DE102008022942A1 (de) 2008-05-09 2008-05-09 Strahlungsemittierender Halbleiterchip

Country Status (7)

Country Link
US (1) US8319250B2 (https=)
EP (1) EP2274774B1 (https=)
JP (1) JP5479461B2 (https=)
KR (1) KR101590204B1 (https=)
CN (1) CN102017143B (https=)
DE (1) DE102008022942A1 (https=)
WO (1) WO2009135457A1 (https=)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011157523A1 (de) * 2010-06-17 2011-12-22 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip
WO2012110364A1 (de) * 2011-02-14 2012-08-23 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung von optoelektronischen halbleiterchips
WO2012052257A3 (de) * 2010-09-28 2012-11-15 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zu dessen herstellung
EP2573827A1 (en) * 2011-09-23 2013-03-27 Samsung Electronics Co., Ltd. Semiconductor light emitting device
EP2362450A3 (en) * 2010-02-23 2014-05-07 LG Innotek Co., Ltd. Light emitting diode, light emitting diode package, method of manufacturing light emitting diode and illumination system
US8723206B2 (en) 2011-09-09 2014-05-13 Samsung Electronics Co., Ltd. Semiconductor light emitting device with contact hole passing through active layer
CN103858233A (zh) * 2011-08-15 2014-06-11 美光科技公司 高电压固态转换器及其相关系统和方法
WO2014161738A1 (de) * 2013-04-05 2014-10-09 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und optoelektronisches modul
EP2506315A3 (en) * 2011-03-30 2016-02-24 Samsung Electronics Co., Ltd. Light-emitting device and method of manufacturing the same
US20180190711A1 (en) 2015-07-15 2018-07-05 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
US10559556B2 (en) 2015-07-15 2020-02-11 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008022942A1 (de) * 2008-05-09 2009-11-12 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102009006177A1 (de) * 2008-11-28 2010-06-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102009053064A1 (de) * 2009-11-13 2011-05-19 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101714039B1 (ko) * 2010-07-01 2017-03-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
KR101154320B1 (ko) 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
DE102011016302B4 (de) * 2011-04-07 2026-01-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
CN102751431A (zh) * 2011-04-18 2012-10-24 北京地调科技发展有限公司 Led芯片及其制备方法
KR101827975B1 (ko) * 2011-10-10 2018-03-29 엘지이노텍 주식회사 발광소자
DE102011084363B4 (de) * 2011-10-12 2022-12-22 Pictiva Displays International Limited Organische Leuchtdiode
DE102012108627B4 (de) * 2012-09-14 2021-06-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Halbleitervorrichtung und Trägerverbund
DE102012218457A1 (de) * 2012-10-10 2014-04-10 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zu seiner herstellung
JP6071650B2 (ja) 2013-03-01 2017-02-01 スタンレー電気株式会社 半導体発光装置
DE102013112881A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US10263150B2 (en) * 2016-05-10 2019-04-16 Rohm Co., Ltd. Semiconductor light emitting device capable of increasing luminous efficiency under a low applied current
CN107437542B (zh) * 2017-07-31 2023-05-05 广东工业大学 一种紫外led芯片及其制备方法
CN110176438B (zh) * 2019-06-11 2021-06-08 厦门市三安光电科技有限公司 发光二极管
EP4030494A1 (en) 2021-01-19 2022-07-20 Excellence Opto. Inc. Vertical light emitting diode structure with high current dispersion and high reliability
US11469345B2 (en) 2021-01-21 2022-10-11 Excellence Opto. Inc. Vertical light emitting diode structure with high current dispersion and high reliability
EP4060754B1 (en) 2021-03-19 2023-08-23 Excellence Opto. Inc. Light-emitting diode grain structure with multiple contact points
US11569418B2 (en) 2021-03-22 2023-01-31 Excellence Opto. Inc. Light-emitting diode grain structure with multiple contact points
US11869816B2 (en) 2021-07-26 2024-01-09 Excellence Opto. Inc. LED package with multiple test pads and parallel circuit elements
EP4125126A1 (en) 2021-07-28 2023-02-01 Excellence Opto. Inc. Led package with multiple test pads and parallel circuit elements

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19945134C2 (de) * 1999-09-21 2003-08-14 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement hoher ESD-Festigkeit und Verfahren zu seiner Herstellung
US20030189201A1 (en) * 2002-03-04 2003-10-09 United Epitaxy Co., Ltd. Package of lightemitting diode with protective element
DE102004005269B4 (de) * 2003-11-28 2005-09-29 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement mit einer Schutzdiode
KR20060062715A (ko) * 2004-12-06 2006-06-12 삼성전기주식회사 정전방전 보호 다이오드를 구비한 ＧａＮ 계열 반도체발광 소자
JP2006228904A (ja) * 2005-02-16 2006-08-31 Sanken Electric Co Ltd 複合半導体装置
JP2007157926A (ja) * 2005-12-02 2007-06-21 Sanken Electric Co Ltd 保護ダイオードを伴った半導体発光装置及びその製造方法
EP1816686A1 (en) * 2004-11-25 2007-08-08 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, illuminating device, mobile communication device, camera, and manufacturing method therefor
JP2007201317A (ja) * 2006-01-30 2007-08-09 Sanken Electric Co Ltd 半導体発光装置及びその製造方法
DE102007021905A1 (de) * 2006-05-12 2007-11-29 Stanley Electric Co. Ltd. Leuchtvorrichtung mit Reflektor aus porösem Aluminiumoxid und seine Herstellung

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US179914A (en) * 1876-07-18 Improvement in grates for brick-kilns
JPH11251644A (ja) * 1998-02-27 1999-09-17 Matsushita Electron Corp 半導体発光装置
TW492202B (en) * 2001-06-05 2002-06-21 South Epitaxy Corp Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge
JP4492093B2 (ja) * 2003-10-27 2010-06-30 ソニー株式会社 半導体発光装置とその製造方法
US20050205883A1 (en) 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
TWI260795B (en) * 2004-03-22 2006-08-21 South Epitaxy Corp Flip chip type- light emitting diode package
CN1324719C (zh) * 2004-04-01 2007-07-04 光磊科技股份有限公司 一种发光二极管
CN100514635C (zh) * 2004-04-09 2009-07-15 晶元光电股份有限公司 倒装式发光二极管封装结构
US7825006B2 (en) * 2004-05-06 2010-11-02 Cree, Inc. Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method
JP2005322722A (ja) * 2004-05-07 2005-11-17 Korai Kagi Kofun Yugenkoshi 発光ダイオード
US7064353B2 (en) 2004-05-26 2006-06-20 Philips Lumileds Lighting Company, Llc LED chip with integrated fast switching diode for ESD protection
CN1291493C (zh) * 2004-07-02 2006-12-20 北京工业大学 用于发光管的抗静电保护电路
CN100386891C (zh) * 2004-07-02 2008-05-07 北京工业大学 高抗静电高效发光二极管及制作方法
KR100576872B1 (ko) 2004-09-17 2006-05-10 삼성전기주식회사 정전기 방전 방지기능을 갖는 질화물 반도체 발광소자
TWI257186B (en) * 2005-09-29 2006-06-21 Formosa Epitaxy Inc Light-emitting diode chip
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
KR20090022701A (ko) * 2007-08-31 2009-03-04 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102007061479A1 (de) * 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Leuchtdiodenchip mit Überspannungsschutz
DE102008022942A1 (de) * 2008-05-09 2009-11-12 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102009006177A1 (de) * 2008-11-28 2010-06-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
US8084775B2 (en) * 2010-03-16 2011-12-27 Bridgelux, Inc. Light sources with serially connected LED segments including current blocking diodes

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19945134C2 (de) * 1999-09-21 2003-08-14 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement hoher ESD-Festigkeit und Verfahren zu seiner Herstellung
US20030189201A1 (en) * 2002-03-04 2003-10-09 United Epitaxy Co., Ltd. Package of lightemitting diode with protective element
DE102004005269B4 (de) * 2003-11-28 2005-09-29 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement mit einer Schutzdiode
EP1816686A1 (en) * 2004-11-25 2007-08-08 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, illuminating device, mobile communication device, camera, and manufacturing method therefor
KR20060062715A (ko) * 2004-12-06 2006-06-12 삼성전기주식회사 정전방전 보호 다이오드를 구비한 ＧａＮ 계열 반도체발광 소자
JP2006228904A (ja) * 2005-02-16 2006-08-31 Sanken Electric Co Ltd 複合半導体装置
JP2007157926A (ja) * 2005-12-02 2007-06-21 Sanken Electric Co Ltd 保護ダイオードを伴った半導体発光装置及びその製造方法
JP2007201317A (ja) * 2006-01-30 2007-08-09 Sanken Electric Co Ltd 半導体発光装置及びその製造方法
DE102007021905A1 (de) * 2006-05-12 2007-11-29 Stanley Electric Co. Ltd. Leuchtvorrichtung mit Reflektor aus porösem Aluminiumoxid und seine Herstellung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
I. Schnitzer et al., Appl. Phys. Lett. 63 (16), 18. Oktober 1993, 2174-2176

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2362450A3 (en) * 2010-02-23 2014-05-07 LG Innotek Co., Ltd. Light emitting diode, light emitting diode package, method of manufacturing light emitting diode and illumination system
US9257612B2 (en) 2010-06-17 2016-02-09 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip
CN102947936B (zh) * 2010-06-17 2016-04-06 奥斯兰姆奥普托半导体有限责任公司 用于制造光电子半导体芯片的方法和光电子半导体芯片
CN102947936A (zh) * 2010-06-17 2013-02-27 奥斯兰姆奥普托半导体有限责任公司 用于制造光电子半导体芯片的方法和光电子半导体芯片
US9627588B2 (en) 2010-06-17 2017-04-18 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip
WO2011157523A1 (de) * 2010-06-17 2011-12-22 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip
US9136431B2 (en) 2010-09-28 2015-09-15 Osram Opto Semiconductor Gmbh Optoelectronic semiconductor chip
US8823034B2 (en) 2010-09-28 2014-09-02 Osram Opto Semiconductors Gmbh Optoelectric semiconductor chip
WO2012052257A3 (de) * 2010-09-28 2012-11-15 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zu dessen herstellung
US9293652B2 (en) 2010-09-28 2016-03-22 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip having reduced strain between different constituent materials of the chip
US9722136B2 (en) 2011-02-14 2017-08-01 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips
CN103384923A (zh) * 2011-02-14 2013-11-06 欧司朗光电半导体有限公司 光电子半导体芯片和用于制造光电子半导体芯片的方法
US10164143B2 (en) 2011-02-14 2018-12-25 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips
CN103384923B (zh) * 2011-02-14 2016-06-15 欧司朗光电半导体有限公司 光电子半导体芯片和用于制造光电子半导体芯片的方法
WO2012110364A1 (de) * 2011-02-14 2012-08-23 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung von optoelektronischen halbleiterchips
US9343637B2 (en) 2011-02-14 2016-05-17 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips
EP2506315A3 (en) * 2011-03-30 2016-02-24 Samsung Electronics Co., Ltd. Light-emitting device and method of manufacturing the same
CN103858233A (zh) * 2011-08-15 2014-06-11 美光科技公司 高电压固态转换器及其相关系统和方法
US10381535B2 (en) 2011-08-15 2019-08-13 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
EP2745323A4 (en) * 2011-08-15 2015-04-01 Micron Technology Inc HIGH VOLTAGE SOLID BODY TRANSFORMERS AND RELATED SYSTEMS AND METHOD
CN103858233B (zh) * 2011-08-15 2017-02-15 美光科技公司 高电压固态转换器及其相关系统和方法
US10777721B2 (en) 2011-08-15 2020-09-15 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
EP3188237A1 (en) * 2011-08-15 2017-07-05 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
US9711701B2 (en) 2011-08-15 2017-07-18 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
US11804586B2 (en) 2011-08-15 2023-10-31 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
US9299742B2 (en) 2011-08-15 2016-03-29 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
US11367822B2 (en) 2011-08-15 2022-06-21 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
US12155026B2 (en) 2011-08-15 2024-11-26 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
US8723206B2 (en) 2011-09-09 2014-05-13 Samsung Electronics Co., Ltd. Semiconductor light emitting device with contact hole passing through active layer
EP2573827A1 (en) * 2011-09-23 2013-03-27 Samsung Electronics Co., Ltd. Semiconductor light emitting device
US9947847B2 (en) 2013-04-05 2018-04-17 Osram Opto Semiconductor Gmbh Optoelectronic semiconductor chip and optoelectronic module
WO2014161738A1 (de) * 2013-04-05 2014-10-09 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und optoelektronisches modul
US20180190711A1 (en) 2015-07-15 2018-07-05 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
US10559556B2 (en) 2015-07-15 2020-02-11 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
US10217792B2 (en) 2015-07-15 2019-02-26 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

Also Published As

Publication number Publication date
KR20110006650A (ko) 2011-01-20
US20110272728A1 (en) 2011-11-10
JP5479461B2 (ja) 2014-04-23
WO2009135457A1 (de) 2009-11-12
JP2011520270A (ja) 2011-07-14
US8319250B2 (en) 2012-11-27
KR101590204B1 (ko) 2016-02-12
EP2274774B1 (de) 2019-06-05
EP2274774A1 (de) 2011-01-19
CN102017143A (zh) 2011-04-13
CN102017143B (zh) 2014-07-09

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