US20030189201A1 - Package of lightemitting diode with protective element - Google Patents
Package of lightemitting diode with protective element Download PDFInfo
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- US20030189201A1 US20030189201A1 US10/188,847 US18884702A US2003189201A1 US 20030189201 A1 US20030189201 A1 US 20030189201A1 US 18884702 A US18884702 A US 18884702A US 2003189201 A1 US2003189201 A1 US 2003189201A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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Abstract
Description
- 1. Field of the Invention
- The present invention pertains to the light-emitting diode, and more particularly to the package of a light-emitting diode with an electrostatic protection element.
- 2. Description of the Prior Art
- Generally, the light-emitting diode has the characteristics of: small volume, lower power consumption, longer life time, short response time, and with excellently monochromatic color. Generally, it is found to be applied in the home appliance, computer and its periphery, and communication products. Since, 1993 Nichia Chemical corp., successfully developed the gallium nitride (GaN), the blue light-emitting diode, which enables the light-emitting diode with fully colors to be realized and thus expands applications thereof to the fully color display, traffic light signal, traffic information panel and instrument panel in car, the braking light, and rear side-marker light. According to the research reports, the high intensity LED such as tour elements AlGaInP LED with wavelength ranges from yellow-green light to red light can reduce the chip number furthermore. The day of using LED instead of tungsten lamp to attain the purpose of lower maintenance and save electricity consumption seems to come approaching.
- In general, the GaN blue light emitting diode is grown on the sapphire substrate, which is an insulator. Thus the n-electrode and p-electrode thus are required to be formed on the same side and the chip could not be too small, the size of a chip is typically about 350 μm×350 μm. However, the P/N junction is very close to the surface, and thus is readily destroyed by the electrostatic charges. Particularly, under dry environment, the electrostatic charges are easily accumulated to a level of about 1-2 KV on the human body. Under such situation, if it happens that the man unintentionally touches one of the diode pins, even a minute current may still destroy the light-emitting diode, which is typically operate at the range of 1˜4 volt. In particular the blue light or blue-green light-emitting diode has the highest merchandise price among the various light emitting diode because the owners who have the manufacture technique are rare and high price of sapphire substrate. All of the factors support the price of the blue light or blue-green LED to be several folds or even hundred folds of others among three primitive colors. Thus, the package of the blue or blue-green LED associates with electrostatic element is very crucial.
- Currently, to prevent the light-emitting diode from the electrostatic discharge, the LED is in parallel with a protective element. FIG. 1 shows a schematic circuit of the light-emitting diode is shunt with a Zener
diode 2. The blue light or blue-green light-emitting diode 1 is operated at a voltage of forward biased between about 3-4V The Zenerdiode 2 is worked reverse biased, typically at a voltage of Zener breakdown, which is about 8V. In normal operation, the operation voltage is lower than Zener breakdown, as a result, no electricity power is consumed from the Zener diode because the off-state. However, in case of high voltage such as 1000V-2000V, accumulated by electrostatic charges is touched on any pin of the LED, will cause the LED device and Zener diode both turn on, however, the current is almost drained through the Zenerdiode 2, which is in Zener breakdown because of much low impedance In consequent, the light-emittingdiode 1 is being protected. - There are several of conventional methods proposed to construct the circuit as shown in FIG. 1. However, each of them though solve some disadvantages present in the prior art but new issues are associated with the newly method. For example, please see FIG. 2, a first embodiment, the package proposed by Inoue et al., in U.S. Pat. No. 6,333,522 may have the best brightness for a single blue light emitting diode as we had known. The Inoue's patent includes twelve embodiments. Most of them include only the minor structure modified on light-emitting diode or silicon diode. An exemplary one in them is shown please see FIG. 2 and FIG. 2A, the bottom of the Zener
diode 2 having an n-electrode 9 is positioned on the flat bottom of the cone-shaped reflector 15 through a conductivesilver paste layer 14. Thereflector 15 designed is in accordance with the reflective angle of light from the light emitting element. Beneath flat bottom of thereflector 15 is aleadframe 13 a, which connects to a positive terminal of DC (direct current). The Zenerdiode 2 includes a p-electrode 7 having a mini-bump 11 thereon, and abonding pad 10 on thep region 21, which is in the n+ dopedsubstrate 2, as well as an n-electrode 8 having abump 12 on the n-type substrate 20. In addition, the light-emittingdiode 1 having an n-electrode 6 and a p-electrode, respectively, mounted on thebump electrode 7 and n-electrode 8 of Zenerdiode 2. Agold wire 17 is then bonding to thebonding pad 10 of Zenerdiode 2 and the leadframe of thenegative electrode 13 b. Finally atransparent resin 18 as package material is then capsulated them to form the light-emitting diode entity. - For blue light LED is concerned, most of them are with the n-
electrode 6 and the p-electrode 5 on one side due to the insulation of the sapphire substrate. Of course as the substrate is silicon carbide the n-electrode and the p-electrode may at different sides. For flip-chip as Inoue et al proposed, only onebonding wire 17 is required, the upward surface of the light-emitting surface is free from any bonding pad. As a result, as the light intensity is concerned, it gives most satisfied brightness among all LED packages. - However, to tell about the package process, several issues are found. Since the area of the light-emitting diode chip is about several tens mil square typically, is about 12 mil×12 mil (1 mil is about {fraction (1/1000)} inch), and the solder is about 30-50 μm in height for a conventional bump process. Thus for a chip is flipped, the difficulty of alignment is drastically increased while the p-
electrode 5 of the and n-electrode of the light-emitting diode, respectively, aligned withsuch miniature bumps electrode 8 and the p-electrode 7 of Zener diode It will be detrimental to the mass produce and the yield. Worthwhile increasing the size of the solder bump is not appropriated since it will cause the risk of the circuit in short between the p-electrode 7 and the n-electrode 8. Furthermore, to avoid thesilver paste 14 over filled, the Si-base substrate: the Zener diode can not be formed too thin in thickness. Typically the thickness is about 1500 μm-200 μm. Still, the heat dissipation can only slowly dissipate through the light-emitting diode itself and part of them from the silicon diode. Therefore the package techniques provided by Inoue still have room to improve. - For the silicon diode manufacture technique is concerned, the p-
region 21 formed in then substrate 20 is through lithographic and doping processes. It will increase fabrication cost compared with those Zener diode, which has p-electrode and n-electrode on the different sides. - Please refer to FIG. 3, the second embodiment of conventional technique issued to Sonobe et al in U.S. Pat. No. 6,054,716. By contrast to first embodiment, the chip of the light-emitting diode and the chip Zener
diode 55 are positioned at different heights. One is on thebottom 61 of the reflector, atop the leadframe ofpositive electrode 52 a, the other one is on theflange 62 of the reflector. In the second embodiment the Zenerdiode 55 has a p-electrode and an n-electrode on different sides. The n-electrode 55 a of the silicon Zener diode is mounted on theflange 62 of the reflector through thesilver paste 58. The p-electrode 55 b of Zenerdiode 55 is then throughconductive wire 68 connects to the leadframe of thenegative electrode 52 b. The p-electrode 65 of the light-emittingdiode 53 is then connected to the leadframe ofpositive electrode 52 a through awire 66. The n-electrode 63 of the light-emittingdiode 53 connected to the p-electrode 55 b of the Zenerdiode 55 through awire 67. Finally, the light-emittingdiode 53 and Zenerdiode 55 and thereflector 61 along with thewires transparent resin 73. - In the second embodiment, it require three wires (means two
pads diode 1 merely. However, the yield and mass producing can be attained significantly improvement. Although the benefits as depicted above, some fatal problems are associated with the structure of the second embodiment: (1) the position height of theflange 62 and the bottom 61 of the reflector are different, and both of them are required to have a silver paste layer welded, and thus the welding stud machine would be much expensive than those for just one point stud. Furthermore, the area of theflange 62 is far less than the area of the bottom 61 of the reflector, As a result, the difficulty for pasting the silver paste thereon. In summary, it's still required to improve. - Please refer to FIG. 4 of a schematic diagram of the third embodiment according to the prior art. The present embodiment is in accordance with the U.S. Pat. No. 6,084,252 disclosed by Isokawa. A
Zener diode 105 has an n-electrode (not shown) formed at its bottom face welded on a lateral position of a positive electrode of theleadframe 107 a with a silver paste layer. A p-electrode formed at a top face of theZener diode 105 electrically connects to a lateral surface of a negative electrode of theleadframe 107 b viaconductive wire 104. ALED 103 mounted on a recess portion of a cone-shapedreflector 101 has a p-electrode 111 and an n-electrode 113. The p-electrode 111 and the n-electrode 113 respectively connect to the positive electrode of theleadframe 107 a and to the negative electrode of theleadframe 107 b of the reflector viaconductive wires leadframes 107 a and 107B and theabove element 103, are molded withtransparent resin 116 to form a dome-shaped LED structure. - The package structure of the third embodiment can solve the problems of about misaligning the
Zener diode 10 with theLED 20 according to the first embodiment, and can also solve the problems of silver paste welding difficulty on theflange 62 of the cone-shaped reflector according to the second embodiment. However, for practical welding process is concerned, to weld the silver paste layer stud on a predetermined position of to the lateral position of aleadframe 107 a by robot arms would at least have to turn leadframe or turn robot arm by 90° with respect to the upright position. Therefore, it's unpractical technique unless the silver paste-welding machine is re-designed or re-equipped. - An object of the present invention is thus proposed a package design to raise the process yield as well as mass producing the light-emitting diode with an electrostatic protection device.
- A package structure of light-emitting diode with an electrostatic protective diode is disclosed. The package structure comprises a light-emitting diode, an electrostatic protective diode, an electrical & heat conductive pad, and an electrical & heat conductive base substrate. In the first preferred embodiment, the light-emitting diode is flipped and with its p-electrode and n-electrode, respectively, mounted on the n-electrode of the electrostatic protective diode and the electrical & heat conductive pad by conductive bumps. The latter two are separated themselves by a gap or an insulation layer and both of them are mounted on and electrically connected to the electrical & heat conductive base substrate. The structure is then through a bonding wire bonding to a bonding pad and the electrical & heat conductive base substrate, respectively, connected to a positive and a negative terminal of a DC power to implement the electrical connection. Forgoing bonding pad is located on the exposed portion of n-electrode of the electrostatic protective diode.
- In the second preferred embodiment, the package structure is the same members as the first preferred embodiment. However the positions of the electrostatic protective diode and the electrical & heat conductive pad are swapped and also the electrodes of the electrostatic protective diode are turned over. That is the electrical & heat conductive pad connected to the p-electrode of the light-emitting diode, which is flipped and the p-electrode of the electrostatic protective diode come into contact with the n-electrode of the light-emitting diode by a conductive bump.
- As a result, the bonding pad for a wire is formed on the p-electrode of the electrostatic protective diode. The n-electrode and the p-electrode of the LED respectively, mounted on the p-electrode of the electrostatic protective diode and the electrical & heat conductive pad by conductive bumps. The latter two are separated themselves by a gap or an insulation layer and both of them are mounted on and electrically connected to the electrical & heat conductive base substrate. The structure is then through a bonding wire bonding to a bonding pad and the electrical & heat conductive base substrate, respectively, connected to a negative and a positive terminal of a DC power to implement the electrical connection. Forgoing bonding pad is located on the exposed portion of p-electrode of the electrostatic protective diode while the LED is overlapped to the silicon Zener diode and the electrical & heat conductive pad.
- In the present invention, the electrostatic protective diode and the electrical & heat conductive pad can have a thickness thinner than 100 μm, and even lower than 50 μm Thus the heat generated from the LED can be dissipated rapidly and injected into the electrical & heat conductive base substrate: the copper base substrate or the aluminum base substrate. Consequently the LED can be operated at a higher power than conventional one to increase the light intensity.
- The foregoing aspects and many of the attendant advantages of this invention will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the accompanying drawings, wherein:
- FIG. 1 is a schematic equivalent circuit of a LED in parallel connection with an electrostatic protective diode, the former one is of forward-biased and the latter is of a reverse-biased.
- FIG. 2 is a schematic diagram of the first embodiment according to the prior art; a LED positioned in a flip-chip configuration aligns with a Zener diode to form a LED structure with an electrostatic protective function.
- FIG. 3 is a schematic diagram of the second embodiment according to the prior art, a LED and a Zener diode mounted on different position of a lampstand so as to form a LED structure with an electrostatic protective function.
- FIG. 4 is a schematic diagram of the third embodiment according to the prior art, a LED mounted on a bottom face of a lampstand and a Zener diode mounted on the lateral position of a positive electrode of the leadfranme so as to form a LED structure with an electrostatic protective function.
- FIG. 5 the LED is flipped and with its p-electrode and n-electrode, respectively, mounted on the n-electrode of the electrostatic protective diode and the electrical & heat conductive pad, the latter two then mounted on the electrical & heat conductive base substrate.
- FIG. 6 is a top view of the electrical & heat conductive base substrate t according to the present invention: the first portion is for supporting the silicon diode and the second portion is for supporting electrical & heat conductive pad, wherein a top surface of the silicon diode having an exposed region for forming a bonding pad.
- FIG. 7 shows an equivalent circuit according the package structure of FIG. 5.
- FIG. 8a & b respectively, show the front view and said view of the package structure housed in the lampstand according to the present invention.
- FIG. 9 shows a cross-sectional view of the package structure according to the present invention.
- FIG. 10 shows a package structure housed in the lampstand according the second embodiment of the present invention.
- As forgoing prior art depicted for the light-emitting diode with protective diode, while a new package structure is proposed to solve the issues of the prior art thereof, however, a new problem is often generated accompanying with the newly proposed method. Although light intensity of the flip-chip package for the light-emitting diode with the p-electrode and the n-electrode on the same side is the best among all because it without the light degraded by the shielding of the electrode, it has the problem of alignment for Zener diode and the LED each other and thus it is not suitable to mass produce In addition, the manufacture cost of Zener diode of p-electrode and the n-electrode on the one side is higher than those of on the two side. For examples, the package method as depicted in the second, the third, or the fourth preferred embodiment of the background of the invention, which are without the alignment problem and thus the yield anticipated to be increased, however, they generally required either to update the apparatus or complicate the package processes. Moreover, the light degrade is their common disadvantage.
- The present invention is thus provided a novel package structure for the light-emitting diode. In package structure, the LED chip is flipped. None of any light emerged from the upper surface is required to sacrifice. At the meantime, the p-electrode and the n-electrode is respectively, positioned on the different side of the Zener diode or other protective diode or electrostatic protection device, would reduce the manufacture cost. Furthermore, in the preferred embodiment according to the present invention, an electrical conductive heat dissipation base substrate with heat dissipation capability better than silicon is provided for supporting the light emitting diode, and thus the light-emitting diode can be allowed to operate at higher power to increase the light intensity
- The package structure is composed of a light-emitting
diode 201 having an n-electrode and a p-electrode on the same side, aZener diode 202. or other electrostatic protective diode, an electrical & heatconductive base substrate 230 and an electrical & heatconductive pad 235 according to the present invention, as is shown in FIG. 5. TheZener diode 202 is formed with an n-electrode and a p-electrode on the other side. The electrical connections are such that the p-electrode 205 r and n-electrode 206 of the light-emittingdiode 201 are connected to the n-electrode 202 n of thesilicon diode 202 and the electrical & heatconductive pad 235 by means of a solder layer or aconductive bump 211 a andconductive bump 211 b, respectively. TheZener diode 202 and the electrical & heatconductive pad 235 are mounted on the electrical & heatconductive base substrate 230 by using solder layer. - Still referring to FIG. 5, a cross-sectional view of the light-emitting diode is shown. The GaN base light-emitting
diode 201 consisting of atransparent substrate 203 such as a sapphire substrate or a silicon carbide(SiC) substrate, which does not absorb or little absorb the light generated from the light emitting layer (or say the active layer 204). - The GaN base light-emitting
diode 201 comprises, from a bottom thereof, thetransparent substrate 203, an n-type GaN layer 206, an InGaN/GaN multi-quantum well structure 204, a p-type GaN layer 205 and ametal reflector 205 r. The GaN base light-emittingdiode 201 is etched by a lithographic and a etch technique to expose a portion of n-type GaN layer 206 and then an n-type ohmic-contact electrode 206 n is formed on the exposed n-type GaN layer 206. Aforementioned GaN light-emittingdiode 201 is to illustrate the n-electrode and the p-electrode at the same side, and the type of the LED is not limit thereto. The present invention is suitable to other LED such as AlGaInP LED too if the LED is demanded with n-electrode and the p-electrode on one side. - Referring to FIG. 6, shows the top view of the electrical & heat
conductive base substrate 230 in according to the present invention. To provide function of heat dissipation, the electrical & heatconductive base substrate 230 can be selected from the material such as aluminum, copper, silicon carbide or the like which has excellently electrical and heat conductivity. The planar surface of theconductive base substrate 230 can be viewed from two portions: thefirst portion 231 is for settingsilicon Zener diode 202 up and thesecond portion 232 for mounting the electrical & heatconductive pad 235. The electrical & heatconductive pad 235 is chosen from silicon semiconductor such as the material the same as thesilicon Zener diode 202, or a silicon carbide. The gap between thesilicon diode 202 and electrical & heatconductive pad 235 can optionally have an insulator layer such as resin in between. It is noted that aportion 202 b ofsilicon Zener diode 202 is still exposed while the light-emittingdiode 201 is overlapped on thesilicon diode 201 and the electrical & heatconductive pad 235 Theregion 202 b is reserved to form a bonding pad thereon so as to bonding awire 217, thereto connect to theleadframe 213 p: a positive electrode. - Please refer to FIG. 8A and 8B, which are side-view along the line b-b′ and a-a′, respectively. The
conductive base substrate 230 is connected to theleadframe 213 n: the negative electrode, by a silver paste layer. - Of above mentioned electrical connections is equivalent to an equivalent circuit, as is shown in FIG. 7. The electrical & heat
conductive pad 235 is equivalent to a resistor R in FIG. 7. - To enhance the heat dissipation capability of the package structure, thinner
silicon Zener diode 202 and the electrical & heatconductive pad 235 are preferred. Thinner of them will provide a shorter route between theLED 201 and electrical & heatconductive base substrate 230 so that the heat generated from the light-emitting diode can rapidly dissipate and thus allow increase the power of the light-emittingdiode 201. Therefore, the thickness of Si Zener diode should be less than 100 μm. The preferred thickness of the SiZener diode is 50 μm or less. - The first preferred embodiment make the n-
electrode 202 n of thesilicon diode 202 aligned with the p-electrode 205 r of the flippedLED 201 and the electrical & heatconductive pad 235 aligned with the n-electrode 206 of the light-emitting diode. Then the electrical & heatconductive pad 235 and thesilicon Zener diode 202 mounted on thefirst portion 231 and thesecond portion 232 of the electrical & heatconductive base substrate 230. The package can also be modified as follows, for example, the positions of the electrostatic protective diode and the electrical & heat conductive pad are swapped and also the n and the p-electrode of the electrostatic protective diode are turn over, a result of cross-sectional view is shown in FIG. 9 and the package structure positioned in a recess portion of the reflector is shown in FIG. 10. In that, the bonding pad is on the p-electrode 202 p instead of the n-electrode 202 n. - The benefits of the present invention:
- The package is by a way that the light-emitting diode is flipped and thus the light-emitting diode itself without any bonding pad on the upward surface as consequently, no light detraction is occurred
- The p and n-electrode of the Zener diode is on different side, and thus can simplify the package process.
- The present invention provides an easy package and high yield. Since the package process without worry the occurrence of short circuit between the n-electrode and the p-electrode due to large bump, and thus easier to align the flipped LED with the silicon diode and the electrical & heat conductive pad.
- The heat dissipation capability is higher than the conventional one due to the thinner silicon Zener diode. In the conventional flip-chip LED on the zener silicon diode package, the silicon Zener diode should have a thickness higher than 200 μm to prevent short circuit due to overflow of the silver paste. In the present invention, the heat generated from the LED can be dissipated through thinner Zener diode and into the electrical & heat conductive base substrate: the copper base substrate or the aluminum base substrate Consequently the LED can be applied at a higher power than conventional one to increase the light intensity.
- As is understood by a person skilled in the art, the foregoing preferred embodiment of the present invention is an illustration of the present invention rather than limiting thereon. It is intended to cover various modifications and similar arrangements included within the spirit and scope of the appended claims, the scope of which should be accorded the broadest interpretation so as to encompass all such modifications and similar structure. For examples, the prime examples of the light-emitting diode and electro-static protective diode are package in the housing space of the reflector. The package can have multiple LED dies package together or without the reflector as above.
Claims (20)
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TW091103964A TW535307B (en) | 2002-03-04 | 2002-03-04 | Package of light emitting diode with protective diode |
TW91103964 | 2002-04-03 |
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US20030189201A1 true US20030189201A1 (en) | 2003-10-09 |
US6861677B2 US6861677B2 (en) | 2005-03-01 |
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US10/188,847 Expired - Fee Related US6861677B2 (en) | 2002-03-04 | 2002-07-05 | Package of lightemitting diode with protective element |
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Also Published As
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TW535307B (en) | 2003-06-01 |
JP3713687B2 (en) | 2005-11-09 |
JP2003258315A (en) | 2003-09-12 |
US6861677B2 (en) | 2005-03-01 |
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