JP2001015815A - Semiconductor light-emitting device - Google Patents
Semiconductor light-emitting deviceInfo
- Publication number
- JP2001015815A JP2001015815A JP2000122583A JP2000122583A JP2001015815A JP 2001015815 A JP2001015815 A JP 2001015815A JP 2000122583 A JP2000122583 A JP 2000122583A JP 2000122583 A JP2000122583 A JP 2000122583A JP 2001015815 A JP2001015815 A JP 2001015815A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- semiconductor
- semiconductor light
- electrodes
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 154
- 239000000758 substrate Substances 0.000 claims description 30
- 239000000126 substance Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 13
- 230000002457 bidirectional effect Effects 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 10
- 229910002601 GaN Inorganic materials 0.000 abstract description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 8
- 230000000694 effects Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 238000007789 sealing Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 150000004703 alkoxides Chemical class 0.000 description 3
- 239000012700 ceramic precursor Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 101100316860 Autographa californica nuclear polyhedrosis virus DA18 gene Proteins 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- -1 cerium-activated yttrium aluminate Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体発光装置に関
し、詳細には保護素子を内蔵した半導体発光装置に関す
る。[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device having a built-in protection element.
【０００２】[0002]
【従来の技術】近年、半導体発光素子として窒化ガリウ
ム系半導体を用いた半導体発光装置（発光ダイオード）
が注目を浴びている。この発光ダイオードでは、青色系
から緑色系の発光色が得られるため、種々の用途に利用
されることが期待されている。図１は従来のこの種の半
導体発光装置１を示し、図２はこの発光装置１に使用さ
れている窒化ガリウム系半導体発光素子２を示す。半導
体発光装置１は、一対のリード端子３、４と、この一方
のリード端子３に形成されたカップ状電極５に固着され
た半導体発光素子２と、この発光素子２の電極とリード
端子３、４との間を電気的に接続する接続導体（リード
細線）６、７と、発光素子２及びリード端子３、４の一
端側を被覆する樹脂封止体８とから構成されている。発
光素子２は、サファイヤ等から成る絶縁性基板９と、こ
の上面に順次形成された窒化ガリウム系半導体から成る
第１の導電形（例えば、Ｎ形）の第１の半導体領域１０
及び第２の導電形（例えば、Ｐ形）の第２の半導体領域
１１と、第１の半導体領域１０の上面に電気的に接続さ
れた第１の電極（例えば、カソード電極）１３と、第２
の半導体領域１１の上面に電気的に接続された第２の電
極（例えば、アノード電極）１３とを備えている。半導
体素子２の絶縁性基板９はカップ状電極５の底面に接着
剤１４を介して固着されており、第１の電極１２と第２
の電極１３とがそれぞれ一方のリード端子３と他方のリ
ード端子４に接続導体６、７を介して電気的に接続され
ている。一対のリード端子３、４を通じて一対の電極１
２、１３間に所定の電圧を印加すると、発光素子２の一
対の電極１２、１３間に電流が流れ、キャリヤの再結合
に基づく発光が生じる。2. Description of the Related Art In recent years, a semiconductor light emitting device (light emitting diode) using a gallium nitride based semiconductor as a semiconductor light emitting element.
Is getting attention. This light emitting diode can emit blue to green light and is therefore expected to be used in various applications. FIG. 1 shows a conventional semiconductor light emitting device 1 of this type, and FIG. 2 shows a gallium nitride-based semiconductor light emitting element 2 used in the light emitting device 1. The semiconductor light emitting device 1 includes a pair of lead terminals 3 and 4, a semiconductor light emitting element 2 fixed to a cup-shaped electrode 5 formed on one of the lead terminals 3, and an electrode of the light emitting element 2 and the lead terminal 3. 4 and a resin sealing body 8 that covers one end of the light emitting element 2 and the lead terminals 3 and 4. The light emitting element 2 includes an insulating substrate 9 made of sapphire or the like, and a first semiconductor region 10 of a first conductivity type (for example, N type) made of a gallium nitride-based semiconductor sequentially formed on the upper surface thereof.
A second semiconductor region 11 of a second conductivity type (for example, P-type), a first electrode (for example, a cathode electrode) 13 electrically connected to an upper surface of the first semiconductor region 10, 2
And a second electrode (eg, an anode electrode) 13 electrically connected to the upper surface of the semiconductor region 11. The insulating substrate 9 of the semiconductor element 2 is fixed to the bottom surface of the cup-shaped electrode 5 via an adhesive 14, and the first electrode 12 and the second electrode
Are electrically connected to one lead terminal 3 and the other lead terminal 4 via connection conductors 6 and 7, respectively. A pair of electrodes 1 through a pair of lead terminals 3 and 4
When a predetermined voltage is applied between the electrodes 2 and 13, a current flows between the pair of electrodes 12 and 13 of the light emitting element 2, and light emission is generated based on the recombination of carriers.
【０００３】[0003]
【発明が解決しようとする課題】ところで、この種の窒
化ガリウム系の半導体発光素子はリン化ガリウム系の発
光素子などに比べると静電破壊に弱いことが知られてい
る。一般に、冬場などに乾燥する時期には衣類の摩擦な
どによって容易に１０００Ｖを超える高電圧の静電気が
発生し、窒化ガリウム系の半導体発光素子では数１０Ｖ
のサージ電圧によって容易に破壊にいたるため、製品の
信頼性を確保するためには取り扱いや取付け（実装）に
厳重な管理を要する。また、同発光素子を組み込んだ回
路にも、これを考慮した回路設計が求められる。このこ
とは、製造、保管、流通及び使用等する上でコストアッ
プする大きな要因となっていた。It is known that this type of gallium nitride based semiconductor light emitting device is more vulnerable to electrostatic breakdown than a gallium phosphide based light emitting device. Generally, high-voltage static electricity exceeding 1000 V is easily generated due to friction of clothes during a period of drying in winter or the like, and a gallium nitride based semiconductor light emitting device has several tens of volts.
The surge voltage easily causes damage, and strict control is required for handling and mounting (mounting) to ensure product reliability. In addition, a circuit incorporating the same light emitting element is required to have a circuit design taking this into consideration. This has been a major factor in increasing costs in production, storage, distribution, use, and the like.
【０００４】上記問題を解決する手段として、静電破壊
防止用の電子部品としての定電圧ダイオードやバリスタ
を発光ダイオードに外付けに接続する試みがある。しか
し、この方法では発光ダイオードとは別に静電破壊防止
用の電子部品を回路基板上に配置しなければならず、回
路基板装置の小型化の妨げとなり、また部品の回路基板
への実装工程も複雑であった。As means for solving the above problem, there is an attempt to externally connect a constant voltage diode or a varistor as an electronic component for preventing electrostatic breakdown to a light emitting diode. However, in this method, electronic components for preventing electrostatic destruction must be arranged on the circuit board in addition to the light emitting diode, which hinders miniaturization of the circuit board device, and also requires a process of mounting the components on the circuit board. It was complicated.
【０００５】そこで、本願発明者は静電破壊防止用の電
子部品の上に発光ダイオードを重ねて配置し、これをリ
ードフレームのカップ電極に配置することを試みた。こ
の方法によれば、発光ダイオードと静電破壊防止用の電
子部品とが一体化しているため、回路基板装置の小型
化、回路基板への実装工程の簡単化が期待された。しか
し、この方法には以下の解決すべき課題があった。 発光ダイオードを静電破壊防止用の電子部品に重ね
て配置した分だけ素子の高さが大きくなるため、カップ
電極５のカップの深さを大きくしなければならない。カ
ップ電極５は周知のように金属フレームを押しつぶして
形成するため、カップの深さを大きくすればカップの径
が増大し、結果として装置の大型化を招来する。ここ
で、静電破壊防止用の電子部品は薄形化するにも限界が
あり、例えば１００μｍ以下の厚さの定電圧ダイオード
を形成しようとすれば、製造工程でチップ割れが生じて
歩留りが著しく低下する。また、静電破壊防止用の電子
部品は、その一方の電極を発光ダイオードの電極にワイ
ヤ（リード細線）で電気的に接続する必要があり、この
ワイヤの接続領域（ボンディングパッド）を形成する必
要があるため面積が大きくなる。この結果、やはり電子
部品を搭載するカップ電極の径を増大する必要があり、
装置の大型化を招来してしまう。 発光ダイオードの上面には、上記のようにアノード
電極１３とカソード電極１２が形成されているため、発
光ダイオードのＰＮ接合で生じて上方に導かれた光の一
部は、この一対の電極１２、１３によって外部への導出
が妨げられる。この結果、発光輝度を十分に高めること
が困難であった。Therefore, the inventor of the present application attempted to arrange a light emitting diode on an electronic component for preventing electrostatic breakdown and to arrange the light emitting diode on a cup electrode of a lead frame. According to this method, since the light emitting diode and the electronic component for preventing electrostatic destruction are integrated, miniaturization of the circuit board device and simplification of the mounting process on the circuit board are expected. However, this method has the following problems to be solved. The height of the element is increased by an amount corresponding to the arrangement of the light emitting diode on the electronic component for preventing electrostatic breakdown, so that the cup depth of the cup electrode 5 must be increased. As is well known, since the cup electrode 5 is formed by crushing a metal frame, if the depth of the cup is increased, the diameter of the cup increases, resulting in an increase in the size of the apparatus. Here, there is a limit in reducing the thickness of an electronic component for preventing electrostatic breakdown. For example, if an attempt is made to form a constant voltage diode having a thickness of 100 μm or less, chip cracks occur in the manufacturing process and the yield is remarkable. descend. Also, in the electronic component for preventing electrostatic breakdown, it is necessary to electrically connect one electrode to the electrode of the light emitting diode by a wire (lead wire), and it is necessary to form a connection region (bonding pad) of this wire. Because of this, the area becomes large. As a result, it is still necessary to increase the diameter of the cup electrode on which the electronic component is mounted,
This leads to an increase in the size of the device. Since the anode electrode 13 and the cathode electrode 12 are formed on the upper surface of the light emitting diode as described above, part of the light generated at the PN junction of the light emitting diode and guided upward is generated by the pair of electrodes 12. 13 prevents the outflow to the outside. As a result, it was difficult to sufficiently increase the light emission luminance.
【０００６】そこで、本発明はこれらの問題点を解決す
ることができる保護素子を内蔵した半導体発光装置を提
供することを目的とする。Accordingly, an object of the present invention is to provide a semiconductor light emitting device having a built-in protection element capable of solving these problems.
【０００７】[0007]
【課題を解決するための手段】上記課題を解決し、上記
目的を達成するための本発明は、半導体発光素子と、こ
の半導体発光素子を保護するための保護素子と、前記半
導体発光素子から放射された光を特定方向に反射させる
ための光反射板と、外部接続用リード部材とを備えた半
導体発光装置であって、前記リード部材の端部に平坦な
素子搭載面が形成され、前記保護素子が前記素子搭載面
に搭載され、前記光反射板及び前記半導体発光素子が前
記保護素子の上に配置されていることを特徴とする半導
体発光装置に係わるものである。SUMMARY OF THE INVENTION In order to solve the above problems and achieve the above object, the present invention provides a semiconductor light emitting device, a protection device for protecting the semiconductor light emitting device, and radiation from the semiconductor light emitting device. A light reflecting plate for reflecting the reflected light in a specific direction, and a lead member for external connection, wherein a flat element mounting surface is formed at an end of the lead member, An element is mounted on the element mounting surface, and the light reflecting plate and the semiconductor light emitting element are arranged on the protection element.
【０００８】なお、請求項２に示すように保護素子を定
電圧ダイオードとすることができる。また、請求項３に
示すように保護素子の主面に凹部を設け、この中に半導
体発光素子を配置し、且つ凹部の側壁に光反射層を設け
ることができる。また、請求項４に示すように、保護素
子を定電圧ダイオードとし、半導体発光素子を発光ダイ
オードとし、定電圧ダイオードの主面の対の電極に発光
ダイオードを接続し、凹部の側壁に定電圧ダイオードの
電極を延在させることができる。また、請求項５に示す
ように、半導体発光素子に第１及び第２の突起電極を設
け、これ等を保護素子の主面上の電極に接続することが
望ましい。また、請求項６に示すように、保護素子を双
方向定電圧ダイオードにすることが望ましい。また、請
求項７に示すように保護素子をバリスタとすることがで
きる。また、請求項８に示すように光波長変換物質（例
えば蛍光物質）を含有する被覆体を発光素子の上に設け
ることができる。[0008] The protection element may be a constant voltage diode. In addition, as described in claim 3, a concave portion is provided on the main surface of the protection element, a semiconductor light emitting element is disposed therein, and a light reflecting layer can be provided on a side wall of the concave portion. Further, as described in claim 4, the protection element is a constant voltage diode, the semiconductor light emitting element is a light emitting diode, the light emitting diode is connected to a pair of electrodes on the main surface of the constant voltage diode, and the constant voltage diode is provided on the side wall of the recess. Electrodes can be extended. It is preferable that the semiconductor light emitting element is provided with first and second protruding electrodes, and these are connected to the electrodes on the main surface of the protection element. It is desirable that the protection element be a bidirectional constant voltage diode. Further, the protection element can be a varistor. Further, as described in claim 8, a coating containing a light wavelength conversion substance (for example, a fluorescent substance) can be provided on the light emitting element.
【０００９】[0009]
【発明の効果】各請求項の発明によれば、半導体発光素
子が保護素子の主面上に配置されるので、発光装置の小
型化を達成することができる。また、請求項１及び２の
発明によれば、光反射板がリード部材とは別個に形成さ
れているので、発光効率を向上させるための光反射板を
設けたにも拘らず、発光装置を小型に保つことができ
る。また、請求項３の発明によれば、保護素子の凹部に
よって光反射効果を得ることができるので、小型化と高
効率化との両方を容易に達成することができる。また、
請求項４の発明によれば、定電圧ダイオードの電極を光
反射層として使用するので、光反射層を容易に得ること
ができる。また、請求項５の発明によれば、半導体発光
素子が突起電極（バンプ電極）を有し、これによって保
護素子に接続されるので、発光素子の光の放射方向に電
極が配置されず、発光効率を高めることができる。ま
た、請求項６の発明によれば、発光素子のマトリックス
回路における不要な電流通路の形成を阻止することがで
きる。また、請求項７によれば、比較的安価なバリスタ
を使用することによって発光装置のコストの低減を図る
ことができる。また、請求項８の発明によれば、発光素
子から放出された光と光波長変換物質による変換によっ
て得られた光との混合光を取り出すことができる。According to the invention of each claim, since the semiconductor light emitting element is disposed on the main surface of the protection element, the size of the light emitting device can be reduced. According to the first and second aspects of the present invention, since the light reflecting plate is formed separately from the lead member, the light emitting device is provided despite the provision of the light reflecting plate for improving the luminous efficiency. Can be kept small. According to the third aspect of the present invention, since the light reflecting effect can be obtained by the concave portion of the protection element, both miniaturization and high efficiency can be easily achieved. Also,
According to the invention of claim 4, since the electrode of the constant voltage diode is used as the light reflecting layer, the light reflecting layer can be easily obtained. According to the fifth aspect of the present invention, since the semiconductor light emitting element has the protruding electrode (bump electrode) and is connected to the protection element by this, the electrode is not arranged in the light emission direction of the light emitting element, and the light emission is performed. Efficiency can be increased. According to the invention of claim 6, formation of an unnecessary current path in the matrix circuit of the light emitting element can be prevented. According to claim 7, the cost of the light emitting device can be reduced by using a relatively inexpensive varistor. Further, according to the invention of claim 8, it is possible to extract a mixed light of the light emitted from the light emitting element and the light obtained by the conversion by the light wavelength conversion substance.
【００１０】[0010]
【実施形態及び実施例】次に、図３〜図１７を参照して
本発明の実施例及び実施形態を説明する。Embodiments and Examples Next, examples and embodiments of the present invention will be described with reference to FIGS.
【００１１】[0011]
【第１の実施例】図３〜図６に示す第１の実施例に係わ
る発光装置は、発光素子としての発光ダイオードチップ
２０と、保護素子としての定電圧ダイオード素子２１
と、第１及び第２のリード部材２２、２３と、反射板２
４と、内部接続ワイヤ２５と、光透過性樹脂封止体２６
とから成る。First Embodiment A light emitting device according to a first embodiment shown in FIGS. 3 to 6 has a light emitting diode chip 20 as a light emitting element and a constant voltage diode element 21 as a protection element.
, First and second lead members 22 and 23, and reflector 2
4, internal connection wire 25, and light-transmitting resin sealing body 26
Consisting of
【００１２】図３に示すように、第１のリード部材２２
は、一方の端部に定電圧ダイオード素子２１を搭載する
ための素子搭載部２２ａとここに連結されたリード部２
２ｂとから成る。第２のリード部材２３はワイヤ２５が
接続されたワイヤ接続部２３ａとここに連結されたリー
ド部２３ｂとから成る。これ等を更に詳細に説明する
と、素子搭載部２２ａは棒状金属部材をこれが延びる方
向に押しつぶして形成した部分であり、平坦な素子搭載
面２７を有する。ワイヤ接続部２３ａは棒状金属部材を
押しつぶして形成した部分であって、先端に平坦なワイ
ヤ接続面２８を有する。素子搭載面２７は定電圧ダイオ
ード素子２１の平面形状にほぼ一致する四角形の平面形
状を有し、ワイヤ接続面２８よりも大きな面積を有す
る。第１及び第２のリード部２２ｂ、２３ｂは直線状に
延びている棒状部であって、これ等の一部は封止体２６
に被覆され、これ等の残部は封止体２６から外に導出さ
れている。As shown in FIG. 3, the first lead member 22
Is a device mounting portion 22a for mounting the constant voltage diode device 21 at one end and a lead portion 2 connected thereto.
2b. The second lead member 23 includes a wire connection portion 23a to which the wire 25 is connected and a lead portion 23b connected to the wire connection portion 23a. More specifically, the element mounting portion 22a is a portion formed by crushing a rod-shaped metal member in a direction in which the rod-shaped metal member extends, and has a flat element mounting surface 27. The wire connection portion 23a is a portion formed by crushing a rod-shaped metal member, and has a flat wire connection surface 28 at the tip. The element mounting surface 27 has a rectangular planar shape substantially matching the planar shape of the constant voltage diode element 21 and has an area larger than the wire connection surface 28. The first and second lead portions 22b and 23b are rod-like portions extending linearly, and a part of these
The rest of these are led out of the sealing body 26.
【００１３】静電気破壊防止用の保護素子としての定電
圧ダイオード素子２１は、図３に示すように、シリコン
半導体から成るＰＮ接合ダイオードであって、Ｐ＋形の
高不純物濃度の第１のＰ形半導体領域２９と、この第１
のＰ形半導体領域２９よりも不純物濃度の低い第２のＰ
形半導体領域３０と、Ｎ形半導体領域３１と、第１及び
第２のアノード電極３２、３３と、第１及び第２のカソ
ード電極３４、３５と、絶縁膜３６とから成る。第１の
Ｐ形半導体領域２９は定電圧ダイオード素子２１の半導
体基体３７の一方の主面３８に露出するように配置さ
れ、第２のＰ形半導体領域３０は半導体基体３７の他方
の主面３９に露出するように配置され、Ｎ形半導体領域
３１は第２のＰ形半導体領域３０の中に島状に配置され
ている。定電圧ダイオード素子２１の上面を発光ダイオ
ードチップ２０の搭載領域と光反射板２４の搭載領域と
の両方に使用するためにＮ形半導体領域３１が半導体基
体３７の上側の主面３９の右半分の領域に配置されてい
る。[0013] constant voltage diode 21 as a protection element for preventing electrostatic breakdown, as shown in FIG. 3, a PN junction diode made of silicon semiconductor, a first P-type high impurity concentration P + form The semiconductor region 29 and the first
The second P having a lower impurity concentration than the P-type semiconductor region 29 of FIG.
The semiconductor device includes a semiconductor region 30, an N-type semiconductor region 31, first and second anode electrodes 32 and 33, first and second cathode electrodes 34 and 35, and an insulating film 36. The first P-type semiconductor region 29 is disposed so as to be exposed on one main surface 38 of the semiconductor substrate 37 of the constant voltage diode element 21, and the second P-type semiconductor region 30 is disposed on the other main surface 39 of the semiconductor substrate 37. The N-type semiconductor region 31 is arranged in an island shape in the second P-type semiconductor region 30. In order to use the upper surface of the constant voltage diode element 21 for both the mounting region of the light emitting diode chip 20 and the mounting region of the light reflecting plate 24, the N-type semiconductor region 31 is formed on the right half of the upper main surface 39 of the semiconductor base 37. Located in the area.
【００１４】第１のアノード電極３２は半導体基体３７
の下側の主面３８に配置され、第１のＰ形半導体領域２
９に接続されている。第２のアノード電極３３は半導体
基体３７の上側の主面３９の中央領域において第２のＰ
形半導体領域３０に接続されている。第１のカソード電
極３４は半導体基体３７の上側の主面３９の中央領域に
おいてＮ形半導体領域３１に接続され、且つ第２のアノ
ード電極３３に対して平行に配置されている。第２のカ
ソード電極３５は半導体基体３７の第１の角部３７ａの
近傍にてＮ形半導体領域３１に接続されている。なお、
第１及び第２のカソード電極３４、３５を連続させて１
つのカソード電極とすることもできる。絶縁膜３６は半
導体基体３７の上側の主面３９の電極３３、３４、３５
以外の領域を覆っている。なお、図３では、図面を単純
にするために絶縁膜３６が省略されている。The first anode electrode 32 is a semiconductor substrate 37
Of the first P-type semiconductor region 2
9 is connected. The second anode electrode 33 has a second P electrode in the central region of the upper main surface 39 of the semiconductor substrate 37.
Connected to the semiconductor region 30. The first cathode electrode 34 is connected to the N-type semiconductor region 31 in a central region of the upper main surface 39 of the semiconductor base 37 and is arranged in parallel with the second anode electrode 33. The second cathode electrode 35 is connected to the N-type semiconductor region 31 near the first corner 37a of the semiconductor substrate 37. In addition,
The first and second cathode electrodes 34 and 35 are continuously connected to one another.
One cathode electrode can also be used. The insulating film 36 is formed of the electrodes 33, 34, and 35 on the upper main surface 39 of the semiconductor substrate 37.
Covering the area other than. In FIG. 3, the insulating film 36 is omitted to simplify the drawing.
【００１５】発光ダイオードチップ２１は、窒化ガリウ
ム系の半導体発光素子であって、図７に示すようにサフ
ァイヤから成る光透過性の絶縁性基板４０とＮ形半導体
領域４１とＰ形半導体領域４２とアノード電極４３とカ
ソード電極４４と第１及び第２のバンプ電極４５、４６
とから成る。Ｎ形半導体領域４１は絶縁性基板４０の一
方の主面２１ａに隣接配置され、Ｐ形半導体領域４２は
Ｎ形半導体領域４１に隣接配置されている。アノード電
極４３はＰ形半導体領域４２に接続されている。Ｐ形半
導体領域４２及びＮ形半導体領域４１の一部を除去する
ことによって段部４７が形成され、これによって露出し
たＮ形半導体領域４１の下側主面にカソード電極４４が
接続されている。フェースダウンボンディングを行うた
めにアノード電極４３とカソード電極４４に第１及び第
２の半球状突起電極即ちバンプ電極４５、４６が形成さ
れている。なお、第１及び第２のバンプ電極４５、４６
をそれぞれ複数個（例えば２個）形成することができ
る。The light emitting diode chip 21 is a gallium nitride based semiconductor light emitting device, as shown in FIG. 7, a light transmissive insulating substrate 40 made of sapphire, an N type semiconductor region 41 and a P type semiconductor region 42. Anode electrode 43, cathode electrode 44, and first and second bump electrodes 45 and 46
Consisting of N-type semiconductor region 41 is arranged adjacent to one main surface 21 a of insulating substrate 40, and P-type semiconductor region 42 is arranged adjacent to N-type semiconductor region 41. The anode electrode 43 is connected to the P-type semiconductor region 42. A step 47 is formed by removing part of the P-type semiconductor region 42 and the N-type semiconductor region 41, and the cathode electrode 44 is connected to the lower main surface of the exposed N-type semiconductor region 41. First and second hemispherical projection electrodes, that is, bump electrodes 45 and 46 are formed on the anode electrode 43 and the cathode electrode 44 for performing face-down bonding. The first and second bump electrodes 45, 46
(For example, two) can be formed.
【００１６】発光ダイオードチップ２０と定電圧ダイオ
ード素子２１とは図８に示すように逆方向並列に接続し
て使用する。図８の接続を外部接続部材を使用しないで
直接に行うために、図３及び図４から明らかなように定
電圧ダイオード素子２１の中央領域の上に発光ダイオー
ドチップ２０が直接に搭載されている。即ち、発光ダイ
オードチップ２０の第１のバンプ電極４５が定電圧ダイ
オード素子２１の第１のカソード電極３４に半田で接続
され、第２のバンプ電極４６が第２のアノード電極３３
に半田で接続されている。この実施例では、光透過性の
絶縁性基板４０が取付面とならず、開放面となっている
ので、Ｎ形半導体領域４１とＰ形半導体領域４２との間
のＰＮ接合に基づいて発生した光は主として絶縁性基板
４０を介して上方向及び側面方向に放射される。The light emitting diode chip 20 and the constant voltage diode element 21 are used by being connected in parallel in the reverse direction as shown in FIG. In order to make the connection of FIG. 8 directly without using an external connection member, the light emitting diode chip 20 is directly mounted on the central region of the constant voltage diode element 21 as is apparent from FIGS. . That is, the first bump electrode 45 of the light emitting diode chip 20 is connected to the first cathode electrode 34 of the constant voltage diode element 21 by soldering, and the second bump electrode 46 is connected to the second anode electrode 33.
Are connected by solder. In this embodiment, since the light-transmitting insulating substrate 40 is not an attachment surface but an open surface, it is generated based on the PN junction between the N-type semiconductor region 41 and the P-type semiconductor region 42. Light is mainly emitted upward and sideways via the insulating substrate 40.
【００１７】発光ダイオードチップ２０のＰＮ接合から
放射される光は、チップ２０の側面方向にも進む。この
側面方向に進む光を上方向に導くために光反射可能な材
料から成る光反射板２４が発光ダイオードチップ２０の
周囲に配置されている。光反射板２４は、図９（Ａ）に
示すように平面形状８角形であって、第１、第２、第
３、第４、第５、第６、第７及び第８の辺５１、５２、
５３、５４、５５、５６、５７及び５８を有する。第
１、第３、第５及び第７の辺５１、５３、５５、５７は
直線であって、図６の定電圧ダイオード素子２１の第
１、第２、第３及び第４の辺３８ａ、３８ｂ、３８ｃ、
３８ｄの中央部分に一致するように設定されている。第
２、第４、第６及び第８の辺５２、５４、５６、５８は
円弧であって、図６の定電圧ダイオードチップ２１の第
１、第２、第３及び第４の角部３７ａ、３７ｂ、３７
ｃ、３７ｃの近傍を露出させるように内側に湾曲し、切
り欠き部を形成している。光反射板２４は中央に先細の
貫通孔５９を有し、この貫通孔５９の壁面６０は傾斜面
になっている。この貫通孔５９は図３及び図４から明ら
かなように発光ダイオードチップ２０を収容できる大き
さに形成されている。Light emitted from the PN junction of the light emitting diode chip 20 also travels in the lateral direction of the chip 20. A light reflecting plate 24 made of a light-reflective material is arranged around the light-emitting diode chip 20 to guide the light traveling in the side direction upward. As shown in FIG. 9A, the light reflecting plate 24 has a planar octagon, and has first, second, third, fourth, fifth, sixth, seventh, and eighth sides 51, 52,
53, 54, 55, 56, 57 and 58. The first, third, fifth, and seventh sides 51, 53, 55, and 57 are straight lines, and the first, second, third, and fourth sides 38a, 38a, of the constant voltage diode element 21 in FIG. 38b, 38c,
38d is set so as to coincide with the central portion. The second, fourth, sixth, and eighth sides 52, 54, 56, 58 are arcs, and are the first, second, third, and fourth corners 37a of the constant voltage diode chip 21 of FIG. , 37b, 37
It is curved inward so as to expose the vicinity of c and 37c to form a notch. The light reflecting plate 24 has a tapered through hole 59 at the center, and a wall surface 60 of the through hole 59 is an inclined surface. This through hole 59 is formed in a size that can accommodate the light emitting diode chip 20, as is clear from FIGS.
【００１８】光反射板２４は図３及び図４に示すように
定電圧ダイオード素子２１の上面に絶縁性接着剤６１に
よって固着されている。この実施例では、発光ダイオー
ドチップ２０が光反射板２４よりも後に定電圧ダイオー
ド素子２１に搭載されているので、光反射板２４を定電
圧ダイオード素子２１に固着した直後には平面的に見て
円形の貫通孔５９の中に第２のアノード電極３３と第１
のカソード電極３４とが露出する。また、図４に示すよ
うに光反射板２４の湾曲している第２の辺５２の外側に
第２のカソード電極３５が露出する。The light reflecting plate 24 is fixed to the upper surface of the constant voltage diode element 21 by an insulating adhesive 61 as shown in FIGS. In this embodiment, since the light emitting diode chip 20 is mounted on the constant voltage diode element 21 after the light reflecting plate 24, the light reflecting plate 24 is viewed in a plane immediately after being fixed to the constant voltage diode element 21. In the circular through hole 59, the second anode 33 and the first
And the cathode electrode 34 is exposed. Further, as shown in FIG. 4, the second cathode electrode 35 is exposed outside the curved second side 52 of the light reflection plate 24.
【００１９】定電圧ダイオード素子２１は、図３に示す
ように第１のリード部材２２の素子搭載面２７に、導電
性接着剤６２によって固着されている。これにより、第
１のアノード電極３２が第１のリード部材２２に電気的
に接続される。また、第２のアノード電極３３は第１及
び第２のＰ形半導体領域２９、３０を介して第１のアノ
ード電極３２に接続されているので、発光ダイオードチ
ップ２０の第２のバンプ電極４６も第１のリード部材２
２に電気的に接続される。第２のカソード電極３５は内
部接続部材としての金属ワイヤ２５によって第２のリー
ド部材２３のワイヤ接続面２８に接続されている。第１
及び第２のカソード電極３４、３５はＮ形半導体領域３
１を介して接続されているので、発光ダイオードチップ
２０の第２のバンプ電極４５は第２のリード部材２３に
電気的に接続されていることになる。The constant voltage diode element 21 is fixed to the element mounting surface 27 of the first lead member 22 by a conductive adhesive 62 as shown in FIG. Thus, the first anode electrode 32 is electrically connected to the first lead member 22. Further, since the second anode electrode 33 is connected to the first anode electrode 32 via the first and second P-type semiconductor regions 29 and 30, the second bump electrode 46 of the light emitting diode chip 20 is also connected. First lead member 2
2 is electrically connected. The second cathode electrode 35 is connected to a wire connection surface 28 of the second lead member 23 by a metal wire 25 as an internal connection member. First
And the second cathode electrodes 34 and 35 are N-type semiconductor regions 3
1, the second bump electrode 45 of the light emitting diode chip 20 is electrically connected to the second lead member 23.
【００２０】光透過性樹脂封止体２６は発光ダイオード
チップ２０、定電圧ダイオード素子２１、光反射板２
４、第１及び第２のリード部材２２、２３の一部、ワイ
ヤ２８を被覆するように形成されている。The light-transmitting resin sealing member 26 includes a light emitting diode chip 20, a constant voltage diode element 21, and a light reflecting plate 2.
4. A part of the first and second lead members 22 and 23 and the wire 28 are formed so as to cover them.
【００２１】図３の半導体発光装置の製造方法の１例を
次に説明する。 （１） まず、素子搭載部２２ａを有する第１のリード
部材２２とワイヤ接続部２３ａを有する第２のリード部
材２３とを備えたリードフレームを用意する。 （２） 次に定電圧ダイオード素子２１と光反射板２４
との組立体を用意する。この実施例では、半導体発光装
置を量産するために、図１０に示すように複数の定電圧
ダイオード素子２１が形成されたシリコン半導体ウエハ
７０の上面に、複数の光反射板２４を構成する光反射板
構成体７１を絶縁性接着剤を介して固着する。光反射板
構成体７１は、光反射用の貫通孔５９と図９（Ａ）に示
す第２、第４、第６及び第８の辺５２、５４、５６、５
８に隣接する切り欠き領域を得るための複数の貫通孔７
２とを有する。切り欠き用貫通孔７２は４つの光反射板
２４にまたがるように配置されている。１つの切り欠き
用貫通孔７２の中に露出する４つの定電圧ダイオード素
子２１の中の１つの第２のカソード電極３５が切り欠き
用貫通孔７２を介して露出している。なお、各光反射板
２４の中央の光反射用貫通孔５９からは第２のアノード
電極３３と第１のカソード電極３４とが露出している。
次に、切り欠き用貫通孔７２の中心を通り且つ互いに直
交している垂直方向仮想線７３と水平方向仮想線７４と
に沿って半導体ウエハ７０及び光反射板構成体７１を切
断し、個別の組立体を得る。 （３） 次に、図３及び図４に示すように定電圧ダイオ
ード素子２１の中央の発光ダイオード搭載領域としての
電極３３、３４の上に発光ダイオードチップ２０のバン
プ電極４５、４６を半田又は導電性接着剤で固着する。 （４） 次に、発光ダイオードチップ２０の固着された
組立体を第１のリード部材２２の素子搭載部２２ａに導
電性接着剤６２で固着する。 （５） 次に、定電圧ダイオード素子２１の第２のカソ
ード電極３５と第２のリード部材２３のワイヤ接続部２
３ａとの間をワイヤ２５で接続する。 （６） 最後に、周知のトランスファモールド方法によ
って樹脂封止体２６を形成し、図３の半導体発光装置を
完成させる。An example of a method for manufacturing the semiconductor light emitting device of FIG. 3 will be described below. (1) First, a lead frame including a first lead member 22 having an element mounting portion 22a and a second lead member 23 having a wire connection portion 23a is prepared. (2) Next, the constant voltage diode element 21 and the light reflecting plate 24
And an assembly is prepared. In this embodiment, in order to mass-produce a semiconductor light emitting device, a plurality of light reflecting plates 24 are formed on a top surface of a silicon semiconductor wafer 70 on which a plurality of constant voltage diode elements 21 are formed as shown in FIG. The plate member 71 is fixed via an insulating adhesive. The light reflecting plate structure 71 includes a light reflecting through-hole 59 and second, fourth, sixth, and eighth sides 52, 54, 56, and 5 shown in FIG.
Plural through-holes 7 for obtaining a notched area adjacent to 8
And 2. The notch through-hole 72 is disposed so as to straddle the four light reflecting plates 24. One second cathode electrode 35 of the four constant voltage diode elements 21 exposed in one notch through hole 72 is exposed through the notch through hole 72. In addition, the second anode electrode 33 and the first cathode electrode 34 are exposed from the light reflection through hole 59 at the center of each light reflection plate 24.
Next, the semiconductor wafer 70 and the light reflecting plate structure 71 are cut along a vertical virtual line 73 and a horizontal virtual line 74 which pass through the center of the notch through-hole 72 and are orthogonal to each other. Obtain the assembly. (3) Next, as shown in FIGS. 3 and 4, the bump electrodes 45, 46 of the light emitting diode chip 20 are soldered or conductive on the electrodes 33, 34 as the light emitting diode mounting area in the center of the constant voltage diode element 21. Fix with a functional adhesive. (4) Next, the assembly to which the light emitting diode chip 20 is fixed is fixed to the element mounting portion 22a of the first lead member 22 with the conductive adhesive 62. (5) Next, the second cathode electrode 35 of the constant voltage diode element 21 and the wire connecting portion 2 of the second lead member 23
3a is connected with the wire 25. (6) Finally, the resin sealing body 26 is formed by a known transfer molding method, and the semiconductor light emitting device of FIG. 3 is completed.
【００２２】本実施例の半導体発光装置によれば、以下
の効果を得ることができる。 （１） 定電圧ダイオード素子２１は、発光ダイオード
チップ２０に正常時に印加される逆方向電圧よりも高
く、発光ダイオードチップ２０の逆方向破壊電圧（耐電
圧）よりも低い値でブレークダウンし、両端子間電圧を
ほぼ一定値に制限するので、発光ダイオードチップ２０
の静電破壊を防止することができる。 （２） 半導体発光装置の小型化を達成することができ
る。即ち、発光ダイオードチップ２０と静電破壊防止用
の定電圧ダイオード素子２１との重ね合せ構造によって
小型化が達成されているのみでなく、リード部材２２に
カップ電極を形成しないで光反射板２４を別に設ける構
造にしたことによっても小型化が達成されている。要す
るに、リード部材２２に光反射用のカップ電極を設ける
ことが不要であるので、素子搭載部２２ａを大きく形成
することが不要になり、素子搭載面２７の面積を定電圧
ダイオード素子２１の面積とほぼ同一に形成でき、小型
化が達成される。なお、実施例の光反射板２４はリード
部材２２とは別体であり、リード部材２２をカップ状に
加工する場合に比べて容易に小型化できる。また、発光
ダイオードチップ２０はバンプ電極４５、４６によって
定電圧ダイオード素子２１に接続されているので、両者
間をワイヤで接続することが不要になり、この点でも装
置の小型化が達成される。 （３） 定電圧ダイオード素子２１の製造歩留りを向上
できる。即ち、本実施例では定電圧ダイオード素子２１
をカップ電極の中又は反射用孔の中に配置する必要がな
いので、定電圧ダイオード素子２１を比較的厚く形成し
ても差し支えない。このため、半導体チップの割れを防
ぐことができ、製造歩留りが向上する。 （４） 大きな発光輝度が得られる。即ち、本実施例の
装置では、光反射板２４が従来のカップ電極と同様の反
射板としての機能を有する。従って、発光輝度が十分に
大きくなる。また、発光ダイオードチップ２０を絶縁性
基板４０側を上方に向けて配置する構造となっているの
で、発光輝度が向上する。即ち、サファイヤから成る絶
縁性基板４０には電極が配置されていないので、図１の
従来の装置で生じた電極１２、１３による光の吸収、及
び接着剤１４による光の吸収が生じない。この結果、発
光ダイオードチップ２０の上方向に光を良好に取り出す
ことができ、発光効率が向上する。 （５） 図１０に示すように多数の定電圧ダイオード素
子２１と多数の光反射板２４とを一体的に形成するの
で、定電圧ダイオード素子２１と光反射板２４との組立
体を容易且つ低コストに製造することができる。 （６） 定電圧ダイオード素子２１の角部３７ａの近傍
が露出するように光反射板２４を形成し、カソード電極
３５を露出させるので、カソード電極３５とリード部材
２３との間のワイヤ２５による接続を小型化を確保して
容易に達成することができる。According to the semiconductor light emitting device of this embodiment, the following effects can be obtained. (1) The constant voltage diode element 21 breaks down at a value higher than the reverse voltage applied to the light emitting diode chip 20 at normal time and lower than the reverse breakdown voltage (withstand voltage) of the light emitting diode chip 20. Since the child voltage is limited to a substantially constant value, the light emitting diode chip 20
Can be prevented from being electrostatically damaged. (2) The miniaturization of the semiconductor light emitting device can be achieved. That is, not only the miniaturization is achieved by the superposed structure of the light emitting diode chip 20 and the constant voltage diode element 21 for preventing electrostatic destruction, but also the light reflecting plate 24 is formed without forming the cup electrode on the lead member 22. Miniaturization is also achieved by adopting a structure provided separately. In short, since it is not necessary to provide a light reflecting cup electrode on the lead member 22, it is not necessary to form the element mounting portion 22a large, and the area of the element mounting surface 27 is reduced by the area of the constant voltage diode element 21. They can be formed almost identically, and miniaturization is achieved. The light reflecting plate 24 of the embodiment is separate from the lead member 22, and can be easily reduced in size as compared with a case where the lead member 22 is processed into a cup shape. Further, since the light emitting diode chip 20 is connected to the constant voltage diode element 21 by the bump electrodes 45 and 46, it is not necessary to connect the both with a wire, and in this respect, the device can be downsized. (3) The manufacturing yield of the constant voltage diode element 21 can be improved. That is, in this embodiment, the constant voltage diode element 21
Need not be disposed in the cup electrode or the reflection hole, the constant voltage diode element 21 may be formed relatively thick. Therefore, cracking of the semiconductor chip can be prevented, and the production yield is improved. (4) A large emission luminance can be obtained. That is, in the device of the present embodiment, the light reflection plate 24 has a function as a reflection plate similar to the conventional cup electrode. Therefore, the emission luminance becomes sufficiently large. In addition, since the light emitting diode chip 20 is arranged with the insulating substrate 40 side facing upward, the light emission luminance is improved. That is, since no electrodes are arranged on the insulating substrate 40 made of sapphire, light absorption by the electrodes 12 and 13 and light absorption by the adhesive 14 which occur in the conventional apparatus of FIG. 1 do not occur. As a result, light can be satisfactorily extracted in the upward direction of the light emitting diode chip 20, and luminous efficiency is improved. (5) As shown in FIG. 10, a large number of constant voltage diode elements 21 and a large number of light reflection plates 24 are integrally formed, so that an assembly of the constant voltage diode elements 21 and the light reflection plate 24 can be easily and inexpensively formed. Can be manufactured to cost. (6) Since the light reflecting plate 24 is formed so as to expose the vicinity of the corner portion 37a of the constant voltage diode element 21 and the cathode electrode 35 is exposed, the connection between the cathode electrode 35 and the lead member 23 by the wire 25 is made. Can be easily achieved while ensuring miniaturization.
【００２３】[0023]
【第２の実施例】次に、図１１及び図１２を参照して第
２の実施例の半導体発光装置を説明する。但し、第２の
実施例を示す図１１及び図１２、更に別の実施例を示す
図１３〜図１９において、図３〜図１０と実質的に同一
の部分には同一の符号を付してその説明を省略する。Second Embodiment Next, a semiconductor light emitting device according to a second embodiment will be described with reference to FIGS. However, in FIGS. 11 and 12 showing the second embodiment, and FIGS. 13 to 19 showing still another embodiment, substantially the same parts as those in FIGS. The description is omitted.
【００２４】図１１及び図１２に示す第２の実施例の半
導体発光装置は、第１の実施例の光反射板２４と同様な
機能を有する部分を保護素子としての定電圧ダイオード
素子２１ａに一体的に形成し、これ以外の点は第１の実
施例と同様に形成したものである。In the semiconductor light emitting device of the second embodiment shown in FIGS. 11 and 12, a portion having the same function as the light reflecting plate 24 of the first embodiment is integrated with a constant voltage diode element 21a as a protection element. The other points are the same as those of the first embodiment.
【００２５】図１１のダイオード素子２１ａは、図３及
び図５のダイオード素子２１と同様に第１及び第２のＰ
形半導体領域２９、３０とＮ形半導体領域３１とを有
し、第１のアノード電極３２は導電性接着剤６２によっ
て第１のリード部材２２の素子搭載部２２ａに固着され
ている。The diode element 21a shown in FIG. 11 has the first and second P elements as in the diode element 21 shown in FIGS.
The first anode electrode 32 is fixed to the element mounting portion 22 a of the first lead member 22 by a conductive adhesive 62.
【００２６】シリコン半導体基板３７の上側の主面３９
にはＰ形半導体領域３０とＮ形半導体領域３１とにまた
がるように凹部８０が形成されている。この凹部８０は
基体３７の下側の主面３８に平行な底面８１と４つの傾
斜側面とを有する。凹部８０は底面８１に向って先細に
なるように形成されている。第２のアノード電極３３ａ
は光反射性金属によって第２のＰ形半導体領域３０に形
成されている。この第２のアノード電極３３ａは凹部８
０の底面８１の左半分のみでなく、凹部８０の左半分の
傾斜側面にも形成されている。Upper main surface 39 of silicon semiconductor substrate 37
Has a recess 80 formed so as to extend over the P-type semiconductor region 30 and the N-type semiconductor region 31. The recess 80 has a bottom surface 81 parallel to the lower main surface 38 of the base 37 and four inclined side surfaces. The concave portion 80 is formed so as to be tapered toward the bottom surface 81. Second anode electrode 33a
Is formed in the second P-type semiconductor region 30 by a light-reflective metal. This second anode electrode 33a is
It is formed not only on the left half of the bottom surface 81 of the zero, but also on the inclined side surface of the left half of the concave portion 80.
【００２７】カソード電極３４ａは、光反射性金属によ
ってＮ形半導体領域３１に形成されている。このカソー
ド電極３４ａは凹部８０の底面８１の右半分のみでな
く、凹部８０の右半分の傾斜側面と上側の主面３９の一
部にも形成されている。アノード電極３３ａとカソード
電極３４ａは勿論電気的に分離され、電気的接続層とし
て機能している他に、光反射層としても機能している。
カソード電極３４ａはワイヤ２５によって第２のリード
部材２３のワイヤ接続面２８に接続されている。The cathode electrode 34a is formed in the N-type semiconductor region 31 using a light-reflective metal. The cathode electrode 34 a is formed not only on the right half of the bottom surface 81 of the concave portion 80 but also on the inclined side surface of the right half of the concave portion 80 and a part of the upper main surface 39. The anode electrode 33a and the cathode electrode 34a are, of course, electrically separated and function not only as an electrical connection layer but also as a light reflection layer.
The cathode electrode 34a is connected to the wire connection surface 28 of the second lead member 23 by the wire 25.
【００２８】発光ダイオードチップ２０は凹部８０に収
容され、この第１のパッド４５はカソード電極３４ａに
接続され、第２のパッド４６はアノード電極３３ａに接
続されている。この発光ダイオードチップ２０は図７に
示すものと同一の構造を有し、絶縁性基板４０が上側に
配置されている。The light emitting diode chip 20 is accommodated in the concave portion 80, the first pad 45 is connected to the cathode electrode 34a, and the second pad 46 is connected to the anode electrode 33a. This light emitting diode chip 20 has the same structure as that shown in FIG. 7, and an insulating substrate 40 is disposed on the upper side.
【００２９】定電圧ダイオード素子２１ａの凹部８０は
周知のエッチング技術によって形成されたものであり、
発光ダイオードチップ２０の全体の高さ（約１００μ
ｍ）よりも深い約２００〜３００μｍに形成されてい
る。第２の実施例では凹部８０を形成するためにＮ形半
導体領域３１が第１の実施例よりも深く形成されてい
る。The concave portion 80 of the constant voltage diode element 21a is formed by a known etching technique.
The overall height of the light emitting diode chip 20 (about 100 μm)
m) is formed at a depth of about 200 to 300 μm. In the second embodiment, the N-type semiconductor region 31 is formed deeper than in the first embodiment to form the recess 80.
【００３０】第２の実施例の凹部８０とアノード電極３
３ａとカソード電極３４ａとは、第１の実施例の光反射
板２４と同様に機能する。従って、第２の実施例によれ
ば、第１の実施例と同様に小型化、発光効率の向上を図
ることができ、且つ反射部を容易に構成することができ
る。The concave portion 80 and the anode electrode 3 of the second embodiment
The 3a and the cathode electrode 34a function similarly to the light reflection plate 24 of the first embodiment. Therefore, according to the second embodiment, as in the first embodiment, downsizing and improvement in luminous efficiency can be achieved, and the reflecting section can be easily configured.
【００３１】[0031]
【第３の実施例】図１３〜図１５に示す第３の実施例の
半導体発光装置は、第１の実施例の定電圧ダイオード素
子２１を双方向定電圧ダイオード素子２１ｂに変形した
他は第１の実施例と同一に構成したものである。Third Embodiment A semiconductor light emitting device according to a third embodiment shown in FIGS. 13 to 15 is similar to the semiconductor light emitting device except that the constant voltage diode element 21 of the first embodiment is changed to a bidirectional constant voltage diode element 21b. The configuration is the same as that of the first embodiment.
【００３２】この第３の実施例の双方向定電圧ダイオー
ド素子２１ｂは、図１３に示すように第１及び第２の定
電圧ダイオードＤ1 、Ｄ2 を逆方向直列に接続したもの
である。図１３のように双方向定電圧ダイオード素子２
１ｂを発光ダイオードチップ２０に並列に接続すると、
発光ダイオードのマトリックス回路における異常電流通
路の形成を阻止することができる。即ち、図８に示す単
一方向の定電圧ダイオード素子２１を接続したものを発
光ダイオードのマトリックス回路に使用すると、マトリ
ックス回路において発光が要求されていない発光ダイオ
ードと定電圧ダイオード素子とを介した閉回路が形成さ
れ、この閉回路に異常電流が流れ、発光が要求されてい
ない発光ダイオードが発光する。これに対して、図３の
双方向定電圧ダイオード素子２１ｂを伴なった発光ダイ
オードチップ２０によってマトリックス回路を形成する
と、第１の定電圧ダイオードＤ1 の順方向電流の向きの
異常電流を第２の定電圧ダイオードＤ2 によって阻止す
ることができ、異常電流が流れない。The bidirectional constant-voltage diode element 21b of the third embodiment has a configuration in which first and second constant-voltage diodes D1 and D2 are connected in series in the reverse direction as shown in FIG. As shown in FIG. 13, the bidirectional constant voltage diode element 2
1b is connected in parallel to the light emitting diode chip 20;
The formation of the abnormal current path in the matrix circuit of the light emitting diodes can be prevented. That is, when the unidirectional constant voltage diode element 21 shown in FIG. 8 is connected to the matrix circuit of the light emitting diode, the light emitting diode which is not required to emit light in the matrix circuit and the closed circuit via the constant voltage diode element are connected. A circuit is formed, and an abnormal current flows in this closed circuit, and a light emitting diode that does not require light emission emits light. On the other hand, when a matrix circuit is formed by the light emitting diode chip 20 with the bidirectional constant voltage diode element 21b of FIG. 3, the abnormal current in the forward current direction of the first constant voltage diode D1 is reduced to the second current. It can be blocked by the constant voltage diode D2, and no abnormal current flows.
【００３３】図１３の双方向定電圧ダイオード素子２１
ｂを形成するため、図１４及び図１５に示すようにシリ
コン半導体基体３７にＰ＋形の第１の半導体領域２９ａ
と、Ｐ形の第２の半導体領域３０ａと、Ｎ＋形の第３の
半導体領域３１ａと、Ｐ形の第４の半導体領域９１と、
Ｐ＋形の第５及び第６の半導体領域９２、９３が設けら
れている。第１、第２、第３、第４及び第５の半導体領
域２９ａ、３０ａ、３１ａ、９１、９２は基体３７の右
側領域において順次積層されている。第６の半導体領域
９３は基体３７の右側領域の上側の主面３９に露出する
ように形成されている。この第６の半導体領域９３には
第１の実施例の第２のアノード電極３３と同様に電極３
３ｂが接続されている。第５の半導体領域９２には、第
１の実施例の第１のカソード電極３４と同様に電極３４
ｂに接続されている。第３の実施例において第５の半導
体領域９２の角領域に配置された電極３５ｂは第１の実
施例の第２のカソード電極３５と同様に使用するもので
ある。The bidirectional constant voltage diode element 21 shown in FIG.
14B, a P + -type first semiconductor region 29a is formed in the silicon semiconductor base 37 as shown in FIGS.
A P-type second semiconductor region 30a, an N + -type third semiconductor region 31a, a P-type fourth semiconductor region 91,
P + -type fifth and sixth semiconductor regions 92 and 93 are provided. The first, second, third, fourth, and fifth semiconductor regions 29a, 30a, 31a, 91, and 92 are sequentially stacked in the right region of the base 37. The sixth semiconductor region 93 is formed so as to be exposed on the upper main surface 39 of the right side region of the base 37. This sixth semiconductor region 93 has an electrode 3 similar to the second anode electrode 33 of the first embodiment.
3b is connected. The fifth semiconductor region 92 has an electrode 34 in the same manner as the first cathode electrode 34 of the first embodiment.
b. In the third embodiment, the electrodes 35b arranged in the corner regions of the fifth semiconductor region 92 are used similarly to the second cathode electrode 35 of the first embodiment.
【００３４】図１４及び図１５に示す双方向定電圧ダイ
オード素子２１ｂに対して、第１の実施例と同様に光反
射板２４が固着され、また電極３３ｂ、３４ｂに発光ダ
イオード２０チップのバンプ電極４５、４６が第１の実
施例と同様に固着される。また、図１４の電極３２ｂは
第１の実施例と同様に第１のリード部材２２の素子取付
面２９に接続される。また、図１４及び図１５の電極３
５ｂは第１の実施例と同様にワイヤ２５で第１のリード
部材２３に接続される。A light reflecting plate 24 is fixed to the bidirectional constant voltage diode element 21b shown in FIGS. 14 and 15, as in the first embodiment, and the bump electrodes of the light emitting diode 20 chip are attached to the electrodes 33b and 34b. 45 and 46 are fixed in the same manner as in the first embodiment. The electrode 32b in FIG. 14 is connected to the element mounting surface 29 of the first lead member 22, as in the first embodiment. The electrode 3 shown in FIGS.
5b is connected to the first lead member 23 by a wire 25 as in the first embodiment.
【００３５】第３の実施例によれば、第１の実施例と同
様な効果を得ることができる他に、マトリックス回路に
おける異常電流の防止効果を得ることができる。According to the third embodiment, an effect similar to that of the first embodiment can be obtained, and also an effect of preventing an abnormal current in the matrix circuit can be obtained.
【００３６】[0036]
【第４の実施例】図１６に示す第４の実施例の半導体発
光装置は、第１の実施例の定電圧ダイオード２１をバリ
スタ２１ｃに変えた他は、第１の実施例と実質的に同一
に構成したものである。バリスタ２１ｃは平面的に見て
四角形のセラミックバリスタ素体９４と絶縁膜９５と一
対の電極９６、９７とから成る。一方の電極９６は素体
９４の側面に接触し、且つ上面と下面との両方に延在し
ている。他方の電極９７は素体９４の側面に接触し、且
つ上面に延在している。発光ダイオードチップ２０の一
対のバンプ電極４５、４６は一対の電極９６、９７に半
田で固着されている。また、棒状導体２５ａが電極９７
とリード部材２３の接続部２３ａとに半田９８ａ、９８
ｂで接続されている。バリスタ２１ｃの上面には第１の
実施例と同一形状の光反射板２４が接着剤６１で固着さ
れている。また、バリスタ２１ｃの下面は導電性接着剤
６０でリード部材２２の素子接続部２２ａに固着されて
いる。Fourth Embodiment A semiconductor light emitting device according to a fourth embodiment shown in FIG. 16 is substantially the same as the first embodiment except that the constant voltage diode 21 of the first embodiment is replaced with a varistor 21c. They have the same configuration. The varistor 21c includes a square ceramic varistor element 94, an insulating film 95, and a pair of electrodes 96 and 97 which are square when viewed in plan. One electrode 96 is in contact with the side surface of the element body 94 and extends on both the upper surface and the lower surface. The other electrode 97 contacts the side surface of the element body 94 and extends to the upper surface. The pair of bump electrodes 45 and 46 of the light emitting diode chip 20 are fixed to the pair of electrodes 96 and 97 by soldering. Further, the rod-shaped conductor 25a is
And solder 98a, 98 to the connecting portion 23a of the lead member 23.
b. The light reflector 24 having the same shape as that of the first embodiment is fixed to the upper surface of the varistor 21c with an adhesive 61. The lower surface of the varistor 21c is fixed to the element connecting portion 22a of the lead member 22 with a conductive adhesive 60.
【００３７】第４の実施例のバリスタ２１ｃは双方向で
定電圧特性を示し、発光ダイオードチップ２０を過電圧
から保護する。従って、第４の実施例によっても第１及
び第２の実施例と同様な効果を得ることができる。The varistor 21c of the fourth embodiment exhibits constant voltage characteristics in both directions, and protects the light emitting diode chip 20 from overvoltage. Therefore, the same effects as those of the first and second embodiments can be obtained by the fourth embodiment.
【００３８】[0038]
【第５の実施例】図１７の第５の実施例の半導体発光装
置は、上面に凹部８０ａを有するバリスタ２１ｄを設
け、凹部８０ａに発光ダイオードチップ２０を配置した
他は図１６と実質的に同一に構成したものである。図１
７の凹部６０ａは図１１の凹部８０と同様に形成され、
この傾斜壁面に光反射性を有する金属から成る電極９
６、９７が形成されている。従って、凹部８０ａの中の
電極９６、９７は光反射体としても機能している。Fifth Embodiment A semiconductor light emitting device according to a fifth embodiment of FIG. 17 is substantially the same as FIG. 16 except that a varistor 21d having a concave portion 80a is provided on the upper surface, and the light emitting diode chip 20 is arranged in the concave portion 80a. They have the same configuration. FIG.
7 are formed in the same manner as the recess 80 of FIG.
An electrode 9 made of a metal having light reflectivity on the inclined wall surface
6, 97 are formed. Therefore, the electrodes 96 and 97 in the concave portion 80a also function as light reflectors.
【００３９】第５の実施例は第１、第３及び第４の実施
例と同様に小型化、及び効率向上の効果を有すると共
に、第２の実施例と同様に光反射板が不要になるという
効果を有する。The fifth embodiment has the effect of reducing the size and improving the efficiency as in the first, third and fourth embodiments, and eliminates the need for a light reflecting plate as in the second embodiment. It has the effect of.
【００４０】[0040]
【第６の実施例】図１８に示す第６の実施例の半導体発
光装置は、図３に示す第１の実施例の半導体発光装置
に、光波長変換物質としての蛍光物質を含有している被
覆体１００を付加し、この他は図３と同一に構成したも
のである。被覆体１００は、光透過性を有する樹脂、ガ
ラス材、セラミックコーティング材などを母材とし、こ
れに蛍光物質を混合したものから成り、図１８では発光
ダイオードチップ２０を覆うように光反射板２４の貫通
孔５９の中に注入されている。Sixth Embodiment A semiconductor light emitting device according to a sixth embodiment shown in FIG. 18 includes a fluorescent material as a light wavelength conversion material in the semiconductor light emitting device according to the first embodiment shown in FIG. The structure is the same as that shown in FIG. 3 except that a coating 100 is added. The coating body 100 is made of a base material made of a resin, glass material, ceramic coating material or the like having a light-transmitting property and mixed with a fluorescent substance. In FIG. 18, the light reflecting plate 24 covers the light emitting diode chip 20. Is injected into the through hole 59.
【００４１】図１８に示すように蛍光物質を含む被覆体
１００を設けると、発光ダイオードチップ２０から発光
された光の少なくとも一部は、被覆体１００に含有され
る蛍光物質によって吸収されて波長変換され、蛍光物質
から発光ダイオードチップ２０から発生した光の波長と
は異なる波長の光が放出される。結果として、封止体２
１の外部には、発光ダイオードチップ２０から発生した
光と蛍光物質から発生した光との混合光即ち混色光が導
出される。As shown in FIG. 18, when the cover 100 containing a fluorescent substance is provided, at least a part of the light emitted from the light emitting diode chip 20 is absorbed by the fluorescent substance contained in the cover 100 and the wavelength conversion is performed. Then, light having a wavelength different from the wavelength of the light generated from the light emitting diode chip 20 is emitted from the fluorescent substance. As a result, the sealing body 2
A light mixture of light generated from the light emitting diode chip 20 and light generated from the fluorescent substance, that is, mixed color light, is led out of the light emitting diode 1.
【００４２】被覆体１００に含有させるための光波長変
換物質として、例えばセリウム付活のイットリウム・ア
ルミン酸塩系蛍光体等の蛍光物質を使用することができ
る。発光ダイオードチップ２０の発光層が窒化ガリウム
系化合物半導体から成り、発光スペクトルが４００ｎｍ
〜５３０ｎｍの単色性ピーク波長を有する青色発光ダイ
オードに上記蛍光物質を含有する被覆体１００を設ける
と、発光ダイオードチップ２０からの青色光が被覆体１
００を通過する時に、被覆体１００中の蛍光物質が励起
されて波長変換され、封止体の外部には発光ダイオード
チップ２０からの青色光と蛍光物質で波長変換された光
との混色光（白色系光）を導出することができる。As the light wavelength conversion substance to be contained in the coating 100, a fluorescent substance such as a cerium-activated yttrium aluminate-based fluorescent substance can be used. The light emitting layer of the light emitting diode chip 20 is made of a gallium nitride-based compound semiconductor and has an emission spectrum of 400 nm.
When the covering 100 containing the above fluorescent substance is provided on a blue light emitting diode having a monochromatic peak wavelength of about 530 nm, the blue light from the light emitting diode chip 20 emits the covering 1
00, the fluorescent substance in the cover 100 is excited and wavelength-converted, and outside the encapsulant, mixed color light of blue light from the light emitting diode chip 20 and light wavelength-converted by the fluorescent substance ( White light) can be derived.
【００４３】被覆体１００の母材即ちコーティング剤と
して、例えば、金属アルコキシドまたはセラミック前駆
体ポリマーなどによって形成したポリメタロキサンまた
はセラミックを使用することができる。母材としてこの
種の材料を使用すると、有機樹脂を母材とした場合に比
べて紫外線、近紫外線、青色光などの波長の短い光が長
い期間照射されても劣化しない信頼性の高い発光装置を
実現できる。また、このような発光装置は、低融点ガラ
スを被覆体の母材とした場合に比べても、被覆体中の不
純物が極めて少なくでき、発光ダイオードチップ２０の
特性に悪影響を与えないなどの種々の利点が得られる。
このような金属アルコキシドまたはセラミック前駆体ポ
リマーなどを母材とする被覆体は、金属アルコキシドよ
り得られたポリメタロキサン・ゾルまたはセラミック前
駆体を貫通孔５９内に塗布した後、乾燥及び熱処理を施
すことで容易に形成できる。As a base material or coating agent of the cover 100, for example, a polymetalloxane or ceramic formed by a metal alkoxide or a ceramic precursor polymer can be used. When this kind of material is used as a base material, a highly reliable light emitting device that does not deteriorate even when irradiated with light having a short wavelength, such as ultraviolet light, near ultraviolet light, or blue light, for a long period of time, compared to a case where an organic resin is used as a base material. Can be realized. Further, such a light emitting device can reduce impurities in the coating very much compared to the case where low melting glass is used as a base material of the coating, and do not adversely affect the characteristics of the light emitting diode chip 20. Is obtained.
The coated body having such a metal alkoxide or a ceramic precursor polymer as a base material is subjected to drying and heat treatment after applying a polymetalloxane sol or a ceramic precursor obtained from the metal alkoxide in the through hole 59. It can be easily formed.
【００４４】本実施例は第１の実施例と同一の効果を有
する他に、発光ダイオードチップ２０のみでは得ること
ができない光を容易に得ることができるという効果を有
する。This embodiment has the same effect as that of the first embodiment, and also has the effect that light which cannot be obtained only by the light emitting diode chip 20 can be easily obtained.
【００４５】[0045]
【第７の実施例】図１９に示す第７の実施例の半導体発
光装置は、図１８の被覆体１００を被覆体１０１に変形
した他は、図１８と同一に構成したものである。図１９
の被覆体１０１は、半導体チップ２０の上面即ち図７に
示す例えばサファイア等から成る絶縁性基板４０の上
に、周知のスクリーン印刷方法でコーティングしたもの
であり、第６の実施例と同一の光波長変換物質としての
蛍光物質を含むものである。図７に示すサファイアなど
から構成される絶縁性基板４０は光透過性を有するた
め、Ｎ型半導体領域４１とＰ型半導体領域４２との間の
ＰＮ接合に基づいて発生した光は絶縁性基板４０を介し
て上方に放射され、蛍光物質を含有する被覆体１０１を
通過する。このとき、発光ダイオードチップ２０から放
射された光の少なくとも一部は被覆体１０１中の蛍光物
質によって吸収されて波長変換され、第６の実施例と同
様に封止体２１の外部に混色光を導出することができ
る。Seventh Embodiment A semiconductor light emitting device according to a seventh embodiment shown in FIG. 19 has the same configuration as that of FIG. 18 except that the cover 100 of FIG. FIG.
Is coated on the upper surface of the semiconductor chip 20, that is, the insulating substrate 40 made of, for example, sapphire shown in FIG. 7 by a known screen printing method. It contains a fluorescent substance as a wavelength conversion substance. Since the insulating substrate 40 made of sapphire or the like shown in FIG. 7 has optical transparency, light generated based on the PN junction between the N-type semiconductor region 41 and the P-type semiconductor region 42 is not applied to the insulating substrate 40. , And passes through the coating 101 containing the fluorescent substance. At this time, at least a part of the light emitted from the light emitting diode chip 20 is absorbed by the fluorescent substance in the cover 101 and wavelength-converted, and mixed light is emitted to the outside of the sealing body 21 as in the sixth embodiment. Can be derived.
【００４６】第７の実施例は第１の実施例と同一の効果
を有する他に、第６の実施例と同一の効果も有する。ま
た、この第７の実施例によれば、発光ダイオードチップ
２０を光反射板２４の中に配置する前に蛍光物質を含む
被覆体１０１を発光ダイオードチップ２０に設けるの
で、蛍光物質を含む被覆体１０１が容易になる。The seventh embodiment has the same effects as the first embodiment, and also has the same effects as the sixth embodiment. Further, according to the seventh embodiment, before the light emitting diode chip 20 is disposed in the light reflecting plate 24, the covering 101 containing the fluorescent substance is provided on the light emitting diode chip 20, so that the covering substance containing the fluorescent substance is provided. 101 becomes easier.
【００４７】[0047]
【変形例】本発明は上述の実施例に限定されるものでは
なく、例えば次の変形が可能なものである。 （１） 図１４の双方向定電圧ダイオード素子２１ｂの
半導体基体３７に図１１の凹部８０と同様なものを設
け、光反射板２４を省いた構成にすることができる。 （２） 定電圧ダイオード素子２１、２１ａ、２１ｂ又
はバリスタ２１ｃ、２１ｄに対する発光ダイオードチッ
プ２０の取付け時点を、定電圧ダイオード素子２１、２
１ａ、２１ｂ又はバリスタ２１ｃ、２１ｄをリード部材
２２に取付けた後に行うこともできる。また、定電圧ダ
イオード素子２１、２１ｂ又はバリスタ２１ｃに光反射
板２４を固着する前に、これ等に発光ダイオードチップ
２０を固着することができる。 （３） 図１８の被覆体１００又は図１９の被覆体１０
１を第２〜第５の実施例の半導体発光装置にも同様に適
用することができる。（４） 被覆体１００又は１０１
をディップ法等で形成することもできる。[Modifications] The present invention is not limited to the above-described embodiment, and for example, the following modifications are possible. (1) The same structure as the concave portion 80 in FIG. 11 can be provided in the semiconductor substrate 37 of the bidirectional constant voltage diode element 21b in FIG. (2) The time when the light emitting diode chip 20 is attached to the constant voltage diode elements 21, 21a, 21b or the varistors 21c, 21d is determined by the constant voltage diode elements 21, 2a.
It can also be performed after attaching 1a, 21b or varistors 21c, 21d to the lead member 22. Before the light reflecting plate 24 is fixed to the constant voltage diode elements 21 and 21b or the varistor 21c, the light emitting diode chip 20 can be fixed to them. (3) The cover 100 of FIG. 18 or the cover 10 of FIG.
1 can be similarly applied to the semiconductor light emitting devices of the second to fifth embodiments. (4) Cover 100 or 101
Can be formed by a dipping method or the like.
【図１】従来の半導体発光装置を概略的に示す断面図で
ある。FIG. 1 is a sectional view schematically showing a conventional semiconductor light emitting device.
【図２】図１の発光ダイオードチップの拡大断面図であ
る。FIG. 2 is an enlarged sectional view of the light emitting diode chip of FIG.
【図３】第１の実施例の半導体発光装置を概略的に示す
断面図である。FIG. 3 is a sectional view schematically showing the semiconductor light emitting device of the first embodiment.
【図４】図３の定電圧ダイオード素子と光反射板との組
立体の平面図である。FIG. 4 is a plan view of an assembly of the constant voltage diode element and the light reflecting plate of FIG. 3;
【図５】図１の定電圧ダイオード素子を図６のＡ−Ａ線
で示す拡大断面図である。FIG. 5 is an enlarged sectional view showing the constant voltage diode element of FIG. 1 along the line AA of FIG. 6;
【図６】図５の定電圧ダイオード素子の平面図である。FIG. 6 is a plan view of the constant voltage diode element of FIG.
【図７】図３の発光ダイオードチップの拡大断面図であ
る。FIG. 7 is an enlarged sectional view of the light emitting diode chip of FIG. 3;
【図８】図３の発光ダイオードチップと定電圧ダイオー
ド素子との電気的接続を示す回路図である。FIG. 8 is a circuit diagram showing an electrical connection between the light emitting diode chip of FIG. 3 and a constant voltage diode element.
【図９】図２の光反射板を拡大して示すものであって、
（Ａ）は平面図、（Ｂ）は（Ａ）のＢ−Ｂ線断面図であ
る。FIG. 9 is an enlarged view of the light reflecting plate of FIG. 2;
(A) is a plan view, and (B) is a cross-sectional view taken along line BB of (A).
【図１０】図４の定電圧ダイオード素子と光反射板との
組立体を製造するための半導体ウエハと反射板構成体と
の組み合せ体を示す平面図である。FIG. 10 is a plan view showing a combination of a semiconductor wafer and a reflector structure for manufacturing the assembly of the constant voltage diode element and the light reflector of FIG. 4;
【図１１】第２の実施例の半導体発光装置一部を図１２
のＣ−Ｃ線に相当する部分で示す断面図である。FIG. 11 shows a part of the semiconductor light emitting device of the second embodiment in FIG.
FIG. 5 is a cross-sectional view showing a portion corresponding to line CC of FIG.
【図１２】図２の定電圧ダイオード素子を示す平面図で
ある。FIG. 12 is a plan view showing the constant voltage diode element of FIG. 2;
【図１３】第３の実施例の半導体発光装置の等価回路図
である。FIG. 13 is an equivalent circuit diagram of the semiconductor light emitting device of the third embodiment.
【図１４】第３の実施例の半導体発光装置の一部を示す
断面図である。FIG. 14 is a sectional view showing a part of the semiconductor light emitting device according to the third embodiment.
【図１５】図１４の双方向定電圧ダイオード素子２１ｂ
の表面を絶縁膜を省いて示す縮小平面図である。15 is a bidirectional constant voltage diode element 21b shown in FIG.
FIG. 3 is a reduced plan view showing the surface of FIG.
【図１６】第４の実施例の半導体発光装置の一部を示す
断面図である。FIG. 16 is a sectional view showing a part of a semiconductor light emitting device according to a fourth embodiment.
【図１７】第５の実施例の半導体発光装置の一部を示す
断面図である。FIG. 17 is a sectional view showing a part of a semiconductor light emitting device according to a fifth embodiment.
【図１８】第６の実施例の半導体発光装置の一部を示す
断面図である。FIG. 18 is a sectional view showing a part of a semiconductor light emitting device according to a sixth embodiment.
【図１９】第７の実施例の半導体発光装置の一部を示す
断面図である。FIG. 19 is a sectional view showing a part of a semiconductor light emitting device according to a seventh embodiment.
２０ 発光ダイオードチップ ２１ 定電圧ダイオード素子 ２４ 光反射板 ３３ アノード電極 ３４ カソード電極 ４５、４６ バンプ電極 Reference Signs List 20 light emitting diode chip 21 constant voltage diode element 24 light reflection plate 33 anode electrode 34 cathode electrode 45, 46 bump electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小林 信夫 埼玉県新座市北野三丁目６番３号 サンケ ン電気株式会社内 Ｆターム(参考） 5F041 AA06 AA23 DA04 DA09 DA13 DA16 DA19 DA32 DA36 DA39 DA43 DA83 EE23 ────────────────────────────────────────────────── ─── Continued on the front page (72) Nobuo Kobayashi 3-6-3 Kitano, Niiza-shi, Saitama F-term (reference) in Sanken Electric Co., Ltd. 5F041 AA06 AA23 DA04 DA09 DA13 DA16 DA19 DA32 DA36 DA39 DA43 DA83 EE23
Claims (8)
を保護するための保護素子と、前記半導体発光素子から
放射された光を特定方向に反射させるための光反射板
と、外部接続用リード部材とを備えた半導体発光装置で
あって、 前記リード部材の端部に平坦な素子搭載面が形成され、 前記保護素子が前記素子搭載面に搭載され、 前記光反射板及び前記半導体発光素子が前記保護素子の
上に配置されていることを特徴とする半導体発光装置。1. A semiconductor light emitting device, a protection device for protecting the semiconductor light emitting device, a light reflecting plate for reflecting light emitted from the semiconductor light emitting device in a specific direction, and a lead member for external connection A flat element mounting surface is formed at an end of the lead member, the protection element is mounted on the element mounting surface, and the light reflecting plate and the semiconductor light emitting element are A semiconductor light emitting device, which is disposed on a protection element.
り、 前記定電圧ダイオードはＰＮ接合を含む半導体基体と、
前記半導体基体の一方の主面に形成された第１の電極
と、前記半導体基体の他方の主面に形成された第２及び
第３の電極とを有し、 前記第１の電極と前記第２の電極は前記半導体基体の中
のＰＮ接合を含まない同一導電形領域を介して電気的に
接続され、 前記第１の電極は前記素子搭載面に固着され、 前記半導体発光素子は一対の電極を有する発光ダイオー
ドであり、 前記発光ダイオードの一対の電極が前記第２及び第３の
電極に接続され、 前記光反射板は平面的に見て前記発光ダイオードを囲む
ように配置されていることを特徴とする請求項１記載の
半導体発光装置。2. The semiconductor device according to claim 2, wherein the protection element is a constant voltage diode, wherein the constant voltage diode includes a semiconductor body including a PN junction,
A first electrode formed on one main surface of the semiconductor substrate, and second and third electrodes formed on the other main surface of the semiconductor substrate, wherein the first electrode and the The two electrodes are electrically connected via the same conductivity type region not including a PN junction in the semiconductor substrate, the first electrode is fixed to the element mounting surface, and the semiconductor light emitting element is a pair of electrodes. A pair of electrodes of the light emitting diode are connected to the second and third electrodes, and the light reflecting plate is arranged so as to surround the light emitting diode when viewed in plan. 2. The semiconductor light emitting device according to claim 1, wherein:
を保護するための保護素子と、外部接続用リード部材と
を備えた半導体発光装置であって、 前記リード部材の端部に平坦な素子搭載面が形成され、 前記保護素子が前記素子搭載面に搭載され、 前記保護素子の主面に凹部が形成され、 前記凹部の中に前記半導体発光素子が配置され、 前記凹部の側壁に光反射層が形成されていることを特徴
とする半導体発光装置。3. A semiconductor light emitting device comprising a semiconductor light emitting element, a protection element for protecting the semiconductor light emitting element, and a lead member for external connection, wherein a flat element is mounted on an end of the lead member. A surface is formed, the protection element is mounted on the element mounting surface, a recess is formed in a main surface of the protection element, the semiconductor light emitting element is disposed in the recess, and a light reflection layer is provided on a side wall of the recess. A semiconductor light-emitting device, characterized by forming:
り、 前記定電圧ダイオードは、ＰＮ接合を含む半導体基体
と、前記半導体基体の一方の主面に形成された第１の電
極と、前記半導体基体の他方の主面に形成された第２及
び第３の電極とを有し、 前記第１の電極と前記第２の電極は前記半導体基体の中
のＰＮ接合を含まない同一導電形領域を介して電気的に
接続され、 前記第１の電極は前記素子搭載面に固着され、 前記半導体発光素子は一対の電極を有する発光ダイオー
ドであり、 前記発光ダイオードの一対の電極が前記第２及び第３の
電極に接続され、 前記保護素子の前記第２及び第３の電極は光反射性を有
する材料から成り且つ前記凹部の側壁に延在しているこ
とを特徴とする請求項３記載の半導体発光装置。4. The protection element is a constant voltage diode, wherein the constant voltage diode includes a semiconductor base including a PN junction, a first electrode formed on one main surface of the semiconductor base, and the semiconductor base. And second and third electrodes formed on the other main surface of the semiconductor substrate, wherein the first electrode and the second electrode are connected via the same conductivity type region not including a PN junction in the semiconductor substrate. The first electrode is fixed to the element mounting surface, the semiconductor light emitting element is a light emitting diode having a pair of electrodes, and the pair of electrodes of the light emitting diode are the second and third electrodes. 4. The semiconductor light emitting device according to claim 3, wherein the second and third electrodes of the protection element are made of a light-reflective material and extend on sidewalls of the recess. 5. apparatus.
を保護するための保護素子と、外部接続用リード部材と
を備えた半導体発光装置であって、 前記リード部材の端部に平坦な素子搭載面が形成され、 前記保護素子が前記素子搭載面に搭載され、 前記半導体発光素子が前記保護素子の主面上に配置さ
れ、 前記保護素子は前記主面上に少なくとも２つの電極を有
し、 前記半導体発光素子は、光透過性基板と、ＰＮ接合を含
む半導体基体と、アノード電極と、カソード電極と、前
記アノード電極に接続された第１の突起電極と、前記カ
ソード電極に接続された第２の突起電極とを有する発光
ダイオードであり、 前記発光ダイオードの前記半導体基体の一方の主面が前
記光透過性基板に接触し、 前記アノード電極と前記カソード電極が前記半導体基体
の他方の主面に配置され、 前記第１及び第２の突起電極が前記保護素子の主面の２
つの電極に接続されていることを特徴とする半導体発光
装置。5. A semiconductor light-emitting device comprising a semiconductor light-emitting element, a protection element for protecting the semiconductor light-emitting element, and a lead member for external connection, wherein a flat element is mounted on an end of the lead member. A surface is formed, the protection element is mounted on the element mounting surface, the semiconductor light emitting element is disposed on a main surface of the protection element, the protection element has at least two electrodes on the main surface, The semiconductor light-emitting device includes a light-transmitting substrate, a semiconductor substrate including a PN junction, an anode electrode, a cathode electrode, a first protruding electrode connected to the anode electrode, and a second electrode connected to the cathode electrode. A light-emitting diode having two projecting electrodes, wherein one main surface of the semiconductor substrate of the light-emitting diode is in contact with the light-transmitting substrate; Disposed on the other main surface of the body substrate, 2 the first and second protrusion electrodes of the main surface of the protective element
A semiconductor light emitting device characterized by being connected to two electrodes.
列に接続された双方向定電圧ダイオード素子であること
を特徴とする請求項１又は２又は３又は４又は５記載の
半導体発光装置。6. The semiconductor light emitting device according to claim 1, wherein said protection element is a bidirectional constant voltage diode element connected in parallel to said semiconductor light emitting element.
列に接続されたバリスタであることを特徴とする請求項
１又は２又は３又は４又は５記載の半導体発光装置。7. The semiconductor light emitting device according to claim 1, wherein the protection element is a varistor connected in parallel to the semiconductor light emitting element.
質を含有する被覆体が設けられていることを特徴とする
請求項１乃至７のいずれかに記載の半導体発光装置。8. The semiconductor light emitting device according to claim 1, wherein a coating containing a light wavelength conversion substance is provided on said semiconductor light emitting element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000122583A JP2001015815A (en) | 1999-04-28 | 2000-04-24 | Semiconductor light-emitting device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11-121612 | 1999-04-28 | ||
| JP12161299 | 1999-04-28 | ||
| JP2000122583A JP2001015815A (en) | 1999-04-28 | 2000-04-24 | Semiconductor light-emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001015815A true JP2001015815A (en) | 2001-01-19 |
Family
ID=26458922
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000122583A Pending JP2001015815A (en) | 1999-04-28 | 2000-04-24 | Semiconductor light-emitting device |
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| Country | Link |
|---|---|
| JP (1) | JP2001015815A (en) |
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