TW202205695A - Light emitting device and manufacturing method thereof - Google Patents

Abstract

The invention discloses a light-emitting device and a manufacturing method thereof. The light-emitting device comprising: a light-emitting unit, the light-emitting unit comprises a non-light-emitting element and a light-emitting diode; a reflective layer covering the non-light-emitting element; a light-transmitting layer covering the reflective layer and the light-emitting diode; a metal connecting layer electrically connecting the non-light-emitting element and the light-emitting diode.

Description

Light-emitting device and method of manufacturing the same

The present invention relates to a light-emitting device and a manufacturing method thereof, in particular to a light-emitting device comprising a voltage regulator diode and a light-emitting diode, and a manufacturing method of the light-emitting device.

In order to prevent EOS (Electrical Over Stress, electrical overload) and ESD (Electro-Static discharge, electrostatic discharge) from damaging the light-emitting diode (Light-Emitting Diode, LED), some Zener characteristics are usually added to the circuit. of electronic components. This kind of electronic component with Zener characteristic does not affect the operation of the circuit at ordinary times, and can guide this abnormal discharge current to the ground terminal during the transient surge, so as to protect the circuit and the light-emitting diode. Commonly used electronic components are Zener Diode, Transient Voltage Suppressor Diode (TVS Diode), or Surface Mount Resistor (Varistor).

As shown in Figure 1, a common packaging method is to add a Zener diode connected in parallel with the light-emitting diode in the light-emitting diode package to protect the light-emitting diode, for example: a Zener diode The p-pole (anode or positive) Za of the body is electrically connected to the n-pole (cathode or negative) Bc of the light-emitting diode, and the n-pole (cathode or negative) Zc of the Zener diode is electrically connected to the p-pole of the light-emitting diode pole (anode or positive) Ba. The manufacturing method includes placing the light emitting diode and the zener diode on a carrier substrate, and making electrical connection by wire bonding, but the manufacturing method is complicated and the volume of the package structure cannot be reduced.

For the above-mentioned problems in the related art, no effective solution has yet been proposed.

In order to solve the problems existing in the prior art, according to an embodiment of the present invention, a light-emitting device is provided, comprising: a light-emitting unit, the light-emitting unit includes a non-light-emitting element and a light-emitting diode; a reflective layer covering the non-light-emitting element a light-transmitting layer covering the reflective layer and the light-emitting diode; a metal connection layer electrically connecting the non-light-emitting element and the light-emitting diode.

The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming the first part over or on the second part may include embodiments in which the first part and the second part are formed in direct contact, and may also include between the first part and the second part Embodiments in which additional components may be formed between, so that the first and second components may not be in direct contact.

Additionally, for ease of description, spatially relative terms such as "below", "below", "under", "above", "on", etc. may be used herein to describe what is shown in the figures The relationship of one element or part to another (or other) elements or parts. In addition to the orientation shown in the figures, spatially relative terms are intended to encompass different orientations of the device in use or operation. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

2A to 2J are schematic flowcharts of a method for manufacturing a light-emitting device according to an embodiment of the present invention. As shown in FIGS. 2A and 2B, a first temporary carrier board 102 is provided; a plurality of light-emitting units are arranged on the first temporary carrier board 102, and each light-emitting unit includes a zener diode 104 (non-light-emitting element) and Light emitting diode 106 (light emitting element). Zener diode 104 has electrode 1041 and light emitting diode 106 has electrode 1061 . Actually, the zener diode 104 and the light emitting diode 106 respectively have two electrodes (refer to FIG. 3A ). Due to the view, only one electrode is shown in FIGS. 2A to 2J .

As shown in FIG. 2A , a plurality of zener diodes 104 may be disposed on the first temporary carrier 102 with the electrodes 1041 facing the first temporary carrier 102 . In some embodiments, the zener diode 104 may be a Zener diode or a TVS diode. In this embodiment, the zener diode 104 is a Zener diode.

As shown in FIG. 2B , a plurality of light emitting diodes 106 are disposed on the first temporary carrier 102 and adjacent to the plurality of zener diodes 104 respectively. The electrodes 1061 of the plurality of light emitting diodes 106 face the first temporary carrier 102 . In this embodiment, the number of the light-emitting diodes 106 and the voltage-stabilizing diodes 104 is both four for description. Furthermore, a light-emitting diode 106 and a zener diode 104 are regarded as a light-emitting unit. However, in other embodiments, a light-emitting unit may include more than two light-emitting diodes 106 and a zener diode 104 . Alternatively, a light-emitting unit may include a light-emitting diode 106 and two or more voltage-stabilizing diodes 104 . Alternatively, a light-emitting unit may include two or more light-emitting diodes 106 and two or more voltage-stabilizing diodes 104 .

As shown in FIGS. 2C and 2D , a first insulating layer 110 is formed on the first temporary carrier 102 , and the first insulating layer 110 covers the plurality of voltage regulator diodes 104 and the plurality of light emitting diodes 106 . In this embodiment, the first insulating layer 110 is a light-transmitting layer. Optionally, phosphor particles can be mixed into the light-transmitting layer. The first insulating layer 110 may include silicone or epoxy, wherein the first insulating layer 110 may be formed by dispensing, spraying, or molding. In this embodiment, dispensing 108 is used as an example.

As shown in FIG. 2D, a physical removal step, such as grinding or polishing, is performed on the light-transmitting layer to form a surface 112 for bonding with the second temporary carrier 114 in a subsequent manufacturing process.

As shown in FIG. 2E , the second temporary carrier 114 is joined so that the plurality of light emitting diodes 106 and the plurality of zener diodes 104 are located on the first temporary carrier 102 and the second temporary carrier 114 which are opposite to each other. In between, that is, bonding the second temporary carrier 114 to the surface 112 of the light-transmitting layer.

As shown in FIG. 2F, after flipping the structure as shown in FIG. 2E and removing the first temporary carrier 102, a trench 116 is formed between any two adjacent light emitting cells. In other words, the trench 116 is formed between the zener diode 104 of one light-emitting unit and the light-emitting diode 106 of another adjacent light-emitting unit.

As shown in FIG. 2G , the white glue layer 118 is filled in the trench 116 . The white glue layer 118 is formed by mixing reflective particles into the matrix, and can reflect the light emitted by the light emitting diode 106, so it can also be regarded as a reflective layer. The color of the white glue layer 118 may depend on the reflective particles mixed in, and the common color is white, so it is called the white glue layer. The matrix can be an insulating material and includes silicone-based or epoxy-based; the reflective particles can include titanium dioxide, silicon dioxide, barium sulfate, or aluminum oxide. The white glue layer 118 may be formed by dispensing, spraying, printing or molding. In this embodiment, dispensing 120 is used as an example.

As shown in FIGS. 2H and 2I , a metal connection layer is formed on the side of the plurality of light emitting units away from the second temporary carrier 114 .

In one embodiment, as shown in FIG. 2H, the protective layer 122 is respectively covered on the electrode 1041 of each zener diode 104 and the electrode 1061 of each light-emitting diode 106; a second protective layer is filled between the protective layers. Insulating layer 124 . The second insulating layer 124 may be the aforementioned white glue layer. The protective layer 122 can be a photoresist (eg, photoresist).

In another embodiment, the second insulating layer 124 can be directly formed on the white glue layer 118 and the first insulating layer 110 by using printing technology, so it is not necessary to form the protective layer 122 on the electrodes 1041 and 1061 to simplify the Process. The second insulating layer 124 may also be formed on the electrodes 1041 and 1061 under a specific selected process. For example, the second insulating layer 124 covers the peripheries of the electrodes 1041 and 1061 but does not cover the middle portions thereof.

As shown in FIG. 2I, the protective layer 122 is removed and the electrodes 1041, 1061 are exposed, and a metal connection layer 128 is formed on the electrodes 1041, 1061 and the second insulating layer 124, wherein the metal connection layer 128 is connected to each zener diode The electrode 1041 of the body 104 and the electrode 1061 of each light emitting diode 106 (for the detailed structure, please refer to FIG. 3A and FIG. 3B ). The metal connection layer 128 may be formed by a printing technique or electroplating. The material of the metal connection layer 128 includes titanium, copper, nickel, silver, tin, gold, platinum, or a combination thereof.

As shown in FIG. 2J , the metal connection layer 128 , the second insulating layer 124 and the white glue layer 118 are cut, and finally the second temporary carrier 114 is removed to form a plurality of light emitting devices 130 . The cutting for forming the plurality of light-emitting devices 130 is performed according to the position of the white glue layer 118 , that is, the cutting is performed along the straight line L. The light-emitting device 130 includes a light-emitting unit, a first insulating layer 110 , a white glue layer 118 , a second insulating layer 124 and a metal connection layer 128 . The zener diode 104 and the light emitting diode 106 in each light emitting unit are electrically connected to each other. The first insulating layer 110 covers the zener diode 104 and the light emitting diode 106 .

As shown in FIGS. 3A and 3B , a bottom view and a cross-sectional view of a light-emitting device 131 in one embodiment are exemplarily shown. Fig. 3B is a cross-sectional view of the line X-X of Fig. 3A. In order to clearly show the relative relationship of the various elements, the various elements are drawn with solid lines. However, in an actual product, only the second insulating layer 124 and the metal connection layer 128 can be seen in the bottom view of the light-emitting device 131 .

As shown in FIG. 3A , the light emitting diode 106 has two electrodes 1061 (a first electrode 1061A and a second electrode 1061B). For example, the first electrode 1061A is a p-pole (anode or anode), and the second electrode 1061B is an n-pole (cathode or anode). The Zener diode 104 has two electrodes 1041 (a third electrode 1041A and a fourth electrode 1041B). The third electrode 1041A is a p-pole, and the fourth electrode 1041B is an n-pole. The metal connection layer includes a first connection portion 128A and a second connection portion 128B. The first connection portion 128A directly covers and contacts the first electrode 1061A (p-pole) of the light-emitting diode 106 and the fourth electrode 1041B (n-pole) of the zener diode 104 , whereby the first electrode 1061A (n-pole) of the light-emitting diode 106 The electrode 1061A (p-pole) is connected to the fourth electrode 1041B (n-pole) of the zener diode 104 . Similarly, the second connection portion 128B directly covers and contacts the second electrode 1061B (n-pole) of the light-emitting diode 106 and the third electrode 1041A (p-pole) of the zener diode 104 , whereby the light-emitting diode 106 The second electrode 1061B (n pole) of the zener diode 104 is connected to the third electrode 1041A (p pole) of the zener diode 104 . Therefore, the light-emitting diodes 106 and the zener diodes 104 are connected in anti-parallel connection (for an equivalent circuit diagram, please refer to FIG. 1 ). In addition, in the bottom view of FIG. 3A , the first connecting portion 128A completely covers the first electrode 1061A (p-pole) contacting the light-emitting diode 106 and does not completely cover the fourth electrode 1041B (n-pole) of the zener diode 104 The second connection portion 128B completely covers the second electrode 1061B (n-pole) of the light-emitting diode 106 and does not completely cover the third electrode 1041A (p-pole) of the zener diode 104 . The third electrode 1041A (p-pole) and the fourth electrode 1041B (n-pole) of the zener diode 104 not covered by the metal connection layer are covered by the second insulating layer 124 . In other words, the third electrode 1041A (p-pole) (the fourth electrode 1041B (n-pole)) of the Zener diode 104 has a part covered by the first connection part 128A (the second connection part 128B), and the other part is covered by the insulating layer covered. Furthermore, the white glue layer 118 only covers two opposite sides of the first insulating layer 110 .

According to the manufacturing method of the embodiment of the present invention, using the CSP (Chip Level Packaging) manufacturing method, the voltage stabilizing diodes with anti-static shock protection function are firstly arranged on the first temporary substrate, and then the light emitting diode chips are placed Next, after the process of dispensing, polishing, flip cutting, and screen printing, the voltage regulator diode and the light emitting diode are finally electrically connected. The invention provides a manufacturing method of a light-emitting device without a substrate and a simple process, and the light-emitting device obtained by the manufacturing method has a small volume and a CSP package structure with the same function.

4A to 4H are schematic flowcharts of a method for manufacturing a light emitting device according to an embodiment of the present invention. As shown in FIG. 4A and FIG. 4B , a first temporary carrier board 102 is provided; a plurality of light emitting units are arranged on the first temporary carrier board 102 , and each light emitting unit includes a voltage regulator diode 104 and a light emitting diode 106 . Zener diode 104 has electrode 1041 and light emitting diode 106 has electrode 1061 . Actually, the zener diode 104 and the light emitting diode 106 respectively have two electrodes (refer to FIG. 5A ). Due to the view, only one electrode is shown in FIGS. 4A to 4H .

As shown in FIG. 4A , a plurality of zener diodes 104 may be disposed on the first temporary carrier board 102 with the electrodes 1041 facing the first temporary carrier board 102 . In some embodiments, the zener diode 104 may be a Zener diode or a TVS diode. In this embodiment, the zener diode 104 is a Zener diode. In this embodiment, the number of the light emitting diodes 106 and the Zener diodes 104 is both four for description. Similarly, a light-emitting diode 106 and a zener diode 104 are regarded as a light-emitting unit. However, in other embodiments, a light-emitting unit may include more than two light-emitting diodes 106 and a zener diode 104 . Alternatively, a light-emitting unit may include a light-emitting diode 106 and two or more voltage-stabilizing diodes 104 . Alternatively, a light-emitting unit may include two or more light-emitting diodes 106 and two or more voltage-stabilizing diodes 104

As shown in FIG. 4B , a plurality of light-transmitting layers 210 are formed to cover the respective light-emitting diodes 106 . Optionally, phosphor particles can be mixed into the light-transmitting layer. The light-transmitting layer may include silicone or epoxy. The light-transmitting layer 210 only covers the light-emitting diode 106 and does not cover the zener diode 104 . In one embodiment, the light-emitting diodes 106 may be disposed on the first temporary carrier 102 first, and then the light-transmitting layer 210 may be selectively coated on the light-emitting diodes 106 without being formed on the zener diodes 104 . superior. Alternatively, the light emitting diode 106 that has been coated with the light-transmitting layer 210 is disposed on the first temporary carrier 102 .

As shown in FIG. 4C , a white glue layer 118 is formed on the first temporary carrier 102 , and the white glue layer 118 covers the plurality of zener diodes 104 and the plurality of light-transmitting layers 210 . The white glue layer 118 covers the light emitting diode 106 but does not directly contact the light emitting diode 106 . The white glue layer 118 completely covers and directly contacts the zener diode 104 . For the material of the white glue layer 118, reference may be made to the above-mentioned relevant paragraphs.

As shown in FIG. 4D, a physical removal step, such as grinding or polishing, is performed on the white glue layer 118 to expose the light-transmitting layer 210 covering the light-emitting diode 106, and is formed in the subsequent manufacturing process with the second temporary carrier The surface 212 to which the plate 114 is to be joined. As shown in FIG. 4E , the second temporary carrier 114 is joined so that the plurality of light emitting diodes 106 and the plurality of zener diodes 104 are located on the first temporary carrier 102 and the second temporary carrier 114 which are opposite to each other. In between, that is, bonding the second temporary carrier plate 114 to the surface 212 .

As shown in FIGS. 4F and 4G , the structure shown in FIG. 4E is reversed and the first temporary carrier 102 is removed. A metal connection layer 128 is formed on a side of the plurality of light emitting units away from the second temporary carrier 114 .

Specifically, as shown in FIG. 4F, after removing the first temporary carrier plate 102, the protective layer 122 is respectively covered on the electrodes 1041 of the respective zener diodes 104 and the electrodes 1061 of the respective light-emitting diodes 106; The second insulating layer 124 is filled between the protective layers 122 by printing. The material of the second insulating layer 124 may be white glue. The protective layer 122 can be a photoresist (eg, photoresist).

As shown in FIG. 4G, the protective layer 122 is removed and the electrodes 1041, 1061 are exposed, and a metal connection layer 128 is formed on the electrodes 1041, 1061 and the second insulating layer 124, wherein the metal connection layer 128 is connected to each zener diode The electrode 1041 of the body 104 and the electrode 1061 of each light-emitting diode 106 (for the detailed structure, please refer to FIG. 5A and FIG. 5B ). The metal connection layer 128 may be formed by a printing technique or electroplating. The material of the metal connection layer 128 includes titanium, copper, nickel, silver, tin, gold, platinum, or a combination thereof.

As shown in FIG. 4H, the metal connection layer 128, the second insulating layer 124 and the white glue layer 118 are cut along the direction perpendicular to the second temporary substrate 114, that is, along the line L, and finally, the second temporary carrier is removed 114 to form a plurality of light emitting devices 230 .

The light-emitting device 230 includes a light-emitting unit, a light-transmitting layer 210 , a white glue layer 118 , a second insulating layer 124 and a metal connection layer 128 . The zener diode 104 and the light emitting diode 106 in each light emitting unit are electrically connected to each other. The white glue layer 118 surrounds the transparent layer 210 and does not cover the upper surface of the transparent layer 210 .

As shown in FIGS. 5A and 5B , a bottom view and a cross-sectional view of a light-emitting device 231 in one embodiment are exemplarily shown. Fig. 5B is a cross-sectional view of the line X-X in Fig. 5A. In order to clearly show the relative relationship of the various elements, the various elements are drawn with solid lines. However, in an actual product, only the second insulating layer 124 and the metal connection layer 128 can be seen in the bottom view of the light-emitting device 231 .

As shown in FIG. 5A , the light emitting diode 106 has two electrodes 1061 (a first electrode 1061A and a second electrode 1061B). The first electrode 1061A is a p-pole (anode or anode), and the second electrode 1061B is an n-pole (cathode or a cathode). The Zener diode 104 has two electrodes 1041 (a third electrode 1041A and a fourth electrode 1041B). The third electrode 1041A is a p-pole, and the fourth electrode 1041B is an n-pole. The metal connection layer includes a first connection portion 128A and a second connection portion 128B. The first connection portion 128A directly covers and contacts the first electrode 1061A (p-pole) of the light-emitting diode 106 and the fourth electrode 1041B (n-pole) of the zener diode 104 , whereby the first electrode 1061A (n-pole) of the light-emitting diode 106 The electrode 1061A (p-pole) is connected to the fourth electrode 1041B (n-pole) of the zener diode 104 . Similarly, the second connection portion 128B directly covers and contacts the second electrode 1061B (n-pole) of the light-emitting diode 106 and the third electrode 1041A (p-pole) of the zener diode 104 , whereby the light-emitting diode 106 The second electrode 1061B (n pole) of the zener diode 104 is connected to the third electrode 1041A (p pole) of the zener diode 104 . Therefore, the light-emitting diodes 106 and the zener diodes 104 are connected in anti-parallel connection (for an equivalent circuit diagram, please refer to FIG. 1 ).

In addition, in the top view of FIG. 5A , the first connecting portion 128A completely covers the first electrode 1061A (p-pole) of the light-emitting diode 106 and does not completely cover the fourth electrode 1041B (n-pole) of the zener diode 104 ; The second connecting portion 128B completely covers the second electrode 1061B (n-pole) of the light-emitting diode 106 and does not completely cover the third electrode 1041A (p-pole) of the zener diode 104 . The third electrode 1041A (p-pole) and the fourth electrode 1041B (n-pole) of the zener diode 104 not covered by the metal connection layer are covered by the second insulating layer 124 . In other words, the third electrode 1041A (p-pole) (the fourth electrode 1041B (n-pole)) of the zener diode 104 has a part covered by the first connection part 128A (the second connection part 128B), and the other part is covered by the first connection part 128A (the second connection part 128B). covered by two insulating layers 124 .

According to the manufacturing method of the embodiment of the present invention, a Zener diode (eg, a Zener diode) is placed in a highly reflective material (such as a white glue layer) containing reflective particles, so as to reduce the absorption of the light-emitting diode by the Zener diode. The light emitted by the polar body further enhances the luminous efficiency of the light-emitting device.

6A to 6H are schematic flowcharts of a method for manufacturing the light emitting device 330 according to an embodiment of the present invention.

As shown in FIG. 6A , a first temporary carrier board 102 is provided; a plurality of light emitting units are arranged on the first temporary carrier board 102 , and each light emitting unit includes a zener diode 104 and a light emitting diode 106 . In some embodiments, the zener diode 104 may be a Zener diode or a TVS diode. In the present embodiment, two light emitting diodes 106 and two zener diodes 104 are shown for illustration. Similarly, a light-emitting diode 106 and a zener diode 104 are regarded as a light-emitting unit. However, in other embodiments, a light-emitting unit may include more than two light-emitting diodes 106 and a zener diode 104 . Alternatively, a light-emitting unit may include a light-emitting diode 106 and two or more voltage-stabilizing diodes 104 . Alternatively, a light-emitting unit may include two or more light-emitting diodes 106 and two or more voltage-stabilizing diodes 104 .

As shown in FIG. 6A , the zener diode 104 has two electrodes 1041 , the light emitting diode 106 has two electrodes 1061 , and the electrodes 1041 and 1061 face the first temporary carrier 102 . The zener diode 104 is firstly coated on the white glue layer 301 and then placed on the first temporary carrier 102 . The white glue layer 301 is formed by mixing reflective particles into a matrix. The matrix can be an insulating material and includes silicone-based or epoxy-based; the reflective particles can include titanium dioxide, silicon dioxide, barium sulfate, or aluminum oxide.

As shown in FIG. 6B , a light-transmitting layer 310 is formed to cover the light-emitting diode 106 and the white glue layer 301 . The phosphor particles can be selectively mixed into the light-transmitting layer 310 . The light-transmitting layer 310 may include silicone or epoxy. The light-transmitting layer 310 may be formed by spraying or molding.

As shown in FIG. 6C , after the second temporary carrier 314 is bonded to the light-transmitting layer 310 , the structure shown in FIG. 6B is reversed and the first temporary carrier 102 is removed. Next, the light-transmitting layer 310 is cut to form trenches 316, wherein the trenches 316 have sloped sidewalls.

As shown in FIG. 6D , metal bumps 323 are formed on the side of the plurality of light emitting units away from the second temporary carrier 314 . Each metal bump 323 is located on the electrode 1061 of the light emitting diode and the electrode 1041 of the zener diode, respectively. In one embodiment, the metal bump 323 is a lead-free solder comprising at least one material selected from the group consisting of tin, copper, silver, bismuth, indium, zinc, and antimony.

As shown in FIG. 6E, a third insulating layer 318 covering the light emitting cells and the metal bumps 323 is formed. In this embodiment, the third insulating layer 318 is a white glue layer.

As shown in FIG. 6F , the third insulating layer 318 is ground to expose the metal bumps 323 .

As shown in FIG. 6G, a metal connection layer 128 connected to the metal bumps 323 is formed. The metal connection layer 128 is connected to the electrode 1041 of the zener diode 104 and the electrode 1061 of the light emitting diode 106 . The metal connection layer 128 may be formed by a printing technique or electroplating. The material of the metal connection layer 128 includes titanium, copper, nickel, silver, tin, gold, platinum, or a combination thereof.

As shown in FIG. 6H, a metal connection layer can also be optionally formed by applying a copper paste 329.

As shown in FIG. 6I, the metal connection layer 128 and the third insulating layer 318 are cut between adjacent light-emitting units, that is, cutting along the straight line L, to form a plurality of light-emitting devices 330, the light-emitting devices 330 including light-emitting units , the white glue layer 301 , the transparent layer 310 , the third insulating layer 318 , the metal bumps 323 and the metal connection layer 128 . The zener diode 104 and the light emitting diode 106 in each light emitting unit are electrically connected to each other. In addition, the transparent layer 310 completely covers the white glue layer 301 . The third insulating layer 318 surrounds the light-transmitting layer 310 and the metal bumps 323 .

As shown in FIG. 6J , the light emitting device 330 connects the light emitting unit to the device 340 through a solder 325 . In one embodiment, the above-mentioned device 340 may be a substrate with electrical connection lines, such as a PCB board, or metal lines formed on an insulating carrier board.

According to the manufacturing method of the embodiment of the present invention, the voltage stabilizing diode (eg, a Zener diode) is coated with a high-reflection material first, and then a subsequent packaging process is performed with the light-emitting diode. Compared with forming the second insulating layer 218 by a printing process in FIG. 4F, in this embodiment, the metal bumps 323 and the third insulating layer 318 are formed first, and then the metal bumps 323 are exposed by grinding, thereby reducing the risk of Yield loss caused by misalignment in the printing process.

As shown in FIG. 7 , a bottom view of the light-emitting device 331 is exemplarily shown in one embodiment.

As shown in FIG. 7 , the light emitting diode 106 has two electrodes 1061 (a first electrode 1061A and a second electrode 1061B). The first electrode 1061A is a p-pole (anode or anode), and the second electrode 1061B is an n-pole (cathode or a cathode). The Zener diode 104 has two electrodes 1041 (a third electrode 1041A and a fourth electrode 1041B). The third electrode 1041A is a p-pole 1041A and the fourth electrode 1041B is an n-pole 1041B. The metal connection layer includes a first connection portion 128A and a second connection portion 128B. The first connection portion 128A directly covers and contacts the first electrode 1061A (p-pole) of the light-emitting diode 106 and the fourth electrode 1041B (n-pole) of the zener diode 104 , whereby the first electrode 1061A (n-pole) of the light-emitting diode 106 The electrode 1061A (p-pole) is connected to the fourth electrode 1041B (n-pole) of the zener diode 104 . Similarly, the second connection portion 128B directly covers and contacts the second electrode 1061B (n-pole) of the light-emitting diode 106 and the third electrode 1041A (p-pole) of the zener diode 104 , whereby the light-emitting diode 106 The second electrode 1061B (n pole) of the zener diode 104 is connected to the third electrode 1041A (p pole) of the zener diode 104 . Therefore, the light-emitting diodes 106 and the zener diodes 104 are connected in anti-parallel connection (for an equivalent circuit diagram, please refer to FIG. 1 ).

In addition, in the bottom view of FIG. 7 , the first connection portion 128A completely covers the first electrode 1061A (p-pole) of the light-emitting diode 106 and the fourth electrode 1041B (n-pole; second electrode) of the zener diode 104 The connection part 128B completely covers the second electrode 1061B (n-pole) of the light-emitting diode 106 and the third electrode 1041A (p-pole) of the zener diode 104. The first connection part 128A is on the outer layer and surrounds the second connection portion 128B. In addition, the third insulating layer 318 surrounds the periphery of the light-transmitting layer 310 .

As shown in FIG. 8 , after removing the second temporary carrier 314 from the structure shown in FIG. 6D , the light emitting unit is connected to the device 340 through the metal bumps 323 . The device 340 can be a substrate with electrical connection lines, that is, the light-emitting unit can be directly bonded and fixed on the substrate through the metal bumps 323, and only a flux (flux, not shown) needs to be applied between the substrate and the light-emitting unit, and no further maintenance is required. Additional coating of solder (solder).

As shown in FIG. 9 , after removing the second temporary carrier board 314 from the structure shown in FIG. 6F , the light emitting unit is connected to the device 340 through the metal bumps 323 . Similar to Figure 8, the light-emitting unit can be directly bonded and fixed on the substrate through the metal bumps 323, and only a flux (not shown) needs to be applied between the substrate and the light-emitting unit without additional coating of solder (solder). .

Table 1 and Table 2 respectively show the optoelectronic data of the light-emitting device 130 and the light-emitting device 230 according to the embodiment of the present invention (five samples were taken for each light-emitting device for testing). It can be seen from Tables 1 and 2 that the average luminous intensity of the light-emitting device 230 is higher than that of the light-emitting device 130 by about 6.5%. Table 1 NO. Luminous flux [lm] Radiant flux [W] Dominant wavelength [nm] Peak wavelength [nm] Half-wave width [nm] Voltage [V] Current [A] Power consumption [W] Luminous efficiency [lm/W] 1 6.8072 0.2584 450.3 444.8158 15.9 2.8631 0.1604 0.4592 14.8 2 7.1461 0.2565 451.3 446.6667 16.3 2.8491 0.1604 0.4569 15.6 3 7.108 0.2548 451.3 446.6667 15.5 2.8507 0.1604 0.4572 15.5 4 7.6123 0.258 452.3 447.0367 15.9 2.8516 0.1604 0.4573 16.6 5 7.1145 0.2586 451 446.2966 15.9 2.8574 0.1604 0.4583 15.5 AVG. 0.25726 Table 2 NO. Luminous flux [lm] Radiant flux [W] Dominant wavelength [nm] Peak wavelength [nm] Half-wave width [nm] Voltage [V] Current [A] Power consumption [W] Luminous efficiency [lm/W] 1 7.6161 0.2742 451.2 446.2966 15.9 2.8436 0.1604 0.456 16.7 2 7.7354 0.2741 451.4 446.6667 15.9 2.844 0.1604 0.4561 17 3 7.469 0.2741 450.8 445.5562 15.9 2.8457 0.1603 0.4563 16.4 4 7.5125 0.2742 451 445.5562 15.9 2.8444 0.1603 0.456 16.5 5 7.4547 0.2735 450.8 445.5562 15.9 2.8461 0.1603 0.4563 16.4 AVG. 0.27402

After conducting the Human Body Mode Electro Static Discharge test on the light-emitting device without voltage regulator diode and the light-emitting device 230 , it can be seen that the voltage drop ratio of the light-emitting device 230 is relatively low. Therefore, the light emitting device 230 has a high anti-static shock capability.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the present invention. within the scope of protection.

102: The first temporary carrier board 104: Zener diode 1041: Electrodes 1041A: Third electrode 1041B: Fourth electrode 106: Light Emitting Diodes 1061: Electrodes 1061A: First Electrode 1061B: Second Electrode 108: Dispensing 110: first insulating layer 112: Surface 114: Second temporary carrier board 116: Groove 118: White glue layer 120: Dispensing 122: protective layer 124: Second insulating layer 128: Metal connection layer 128A: The first connecting part 128B: Second connecting part 130, 131: Lighting device 210: Translucent layer 212: Surface 230, 231: Lighting device 301: White glue layer 310: transparent layer 314: Second Temporary Carrier 316: Groove 318: The third insulating layer 323: Metal bumps 325: Solder 329: Copper paste 330, 331: Lighting device 340: Device L: straight line Bc, Zc: n pole Ba, Za: p pole

Figure 1 is a schematic circuit diagram of the connection between the light-emitting diode and the Zener diode;

2A to 2J are schematic cross-sectional views of a manufacturing process of a method for manufacturing a light-emitting device according to an embodiment of the present invention;

3A is a schematic bottom view of a light-emitting device according to an embodiment of the present invention;

Figure 3B is a schematic cross-sectional view at X-X in Figure 3A;

4A to 4H are schematic cross-sectional views of a manufacturing process of a method for manufacturing a light-emitting device according to an embodiment of the present invention;

5A is a schematic bottom view of a light-emitting device according to an embodiment of the present invention;

Figure 5B is a schematic cross-sectional view at X-X in Figure 5A;

6A to 6I are schematic cross-sectional views of a manufacturing process of a method for manufacturing a light-emitting device according to an embodiment of the present invention;

FIG. 6J is a schematic diagram of the connection between the light-emitting device and the device according to the embodiment of the present invention.

FIG. 7 is a schematic bottom view of a light-emitting device according to an embodiment of the present invention;

FIG. 8 is a schematic diagram of the structure of FIG. 6D connected to the device.

FIG. 9 is a schematic diagram of the structure and device connection of FIG. 6F.

104: Zener diode

106: Light Emitting Diodes

1041B: Fourth electrode

1061A: First Electrode

110: first insulating layer

118: White glue layer

124: Second insulating layer

128: Metal connection layer

Claims (10)

A light-emitting device, comprising: a light-emitting element with a light-emitting top surface; a non-light-emitting element having a non-light-emitting top surface; a metal connection layer completely under the light-emitting element and the non-light-emitting element and electrically connecting the two to each other; and a reflective layer surrounding the light-emitting element but exposing the light-emitting top surface, burying the non-light-emitting element and shielding the non-light-emitting top surface; Wherein, the outermost sidewall of the reflective layer is exposed to the ambient medium. The light-emitting device according to claim 1, further comprising an insulating layer (124) located between the light-emitting element and the metal connection layer, and between the non-light-emitting element and the metal connection layer. The light-emitting device according to claim 1, wherein the light-emitting element has a first electrode and a second electrode facing the metal connection layer, and the non-light-emitting element has a third electrode and a fourth electrode facing the metal a connection layer, and the metal connection layer has a first connection part connecting the first electrode and the fourth electrode and a second connection part connecting the second electrode and the third electrode. The light-emitting device according to claim 1, further comprising a light-transmitting layer covering the light-emitting top surface. The light-emitting device according to claim 4, wherein the light-transmitting layer surrounds the light-emitting element and is in contact with the reflective layer. The light-emitting device according to claim 1, wherein the reflective layer covers and surrounds the non-light-emitting element. The light-emitting device according to claim 2, wherein the reflective layer is in direct contact with the insulating layer. The light-emitting device according to claim 2, wherein the insulating layer (124) includes a plurality of holes, and the metal connection layer (128) is electrically connected to the light-emitting element (106) and the non-light-emitting element through the plurality of holes . The light-emitting device according to claim 1, wherein the reflective layer is higher than the light-emitting element. The light-emitting device according to claim 1, wherein the reflective layer comprises titanium dioxide, silicon dioxide, barium sulfate or aluminum oxide.

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