JP2008028029A - Varistor, and light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a varistor and a light emitting device which are capable of radiating heat efficiently. <P>SOLUTION: A through-hole 19 penetrating a varistor element 12 is formed at a part corresponding to the central region of a first main surface 12a in the varistor element 12. A buffer unit 21 is provided with a first main surface 21a and a second main surface 21b while the first main surface 21a is arranged so as to be contacted with the second main surface 12b of the varistor element 12. A through-hole 23 penetrating the buffer unit 21 is formed at a part corresponding to the central region of the first main surface 21a in the buffer unit 21, so as to be continued to the through-hole 19 formed on the varistor element 12. A base unit 31 is provided with a first main surface 31a and a second main surface 31b. The base unit 31 is formed of a material having a heat conductivity and a light reflection coefficient higher than those of the varistor element 12, and the first main surface 31a is arranged so as to be contacted with the second main surface 21b of the buffer unit 21. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a varistor and a light emitting device including the varistor.

As a varistor, an element body having a varistor element body that exhibits voltage non-linear characteristics and a pair of internal electrodes disposed inside the varistor element body with a part of the varistor element body interposed therebetween; A device including a pair of terminal electrodes formed on the surface and respectively connected to corresponding internal electrodes is known (see, for example, Patent Document 1).
JP 2002-246207 A

  By the way, the varistor can protect the semiconductor light emitting element from an ESD (Electrostatic Discharge) surge by being connected in parallel to the semiconductor light emitting element. This semiconductor light emitting device generates heat during operation. When the semiconductor light emitting element becomes high temperature, the light emitting operation is affected. For this reason, it is necessary to dissipate the generated heat efficiently.

  Therefore, an object of the present invention is to provide a varistor and a light-emitting device that can dissipate heat efficiently.

  The varistor according to the present invention includes a base part, a varistor part that is disposed on one main surface side of the base part and has a varistor element body that exhibits voltage nonlinear characteristics and at least two external electrodes. The base portion is made of a material having higher thermal conductivity and light reflectance than the varistor element body, and the varistor element body has a through hole reaching the base portion.

  In the varistor according to the present invention, since the base portion is made of a material having a higher thermal conductivity than the varistor element body, the heat transmitted to the varistor portion can be efficiently dissipated from the base portion.

  By the way, as a technique for increasing the light emission efficiency of a light emitting device including a varistor and a semiconductor light emitting element connected in parallel to the varistor, it is conceivable to arrange a light reflector around the semiconductor light emitting element. However, in this case, it is necessary to secure a space for arranging the light reflecting plate, and it is difficult to reduce the size of the entire light emitting device. Therefore, the present inventors considered that if the light reflectivity of the varistor itself can be increased, the light emission efficiency of the light emitting device can be increased while the entire light emitting device is reduced in size.

  In the varistor according to the present invention, the base portion is made of a material having higher light reflectance than the varistor element body, and a through-hole reaching the base portion is formed in the varistor element body. Thereby, one main surface of the base portion functions as a light reflecting surface, and the light reflectivity of the varistor can be improved.

  On the other hand, the light-emitting device according to the present invention is a light-emitting device including a varistor and a semiconductor light-emitting element, wherein the varistor is disposed on the main surface side of the base portion and the base portion, and the voltage non-linearity. A varistor part having characteristics and a varistor part having at least two external electrodes, and the base part is made of a material having higher thermal conductivity and light reflectance than the varistor element body. A through hole reaching the base portion is formed, and the semiconductor light emitting element is physically and electrically connected to at least two external electrodes so as to be connected in parallel to the varistor.

  In the light emitting device according to the present invention, since the semiconductor light emitting element is physically connected to the external electrode of the varistor, the heat generated in the semiconductor light emitting element is transferred to the varistor part of the varistor through the external electrode. . The heat transferred to the varistor part is transferred to the base part. However, since the base part is made of a material having a higher thermal conductivity than the varistor element body, the heat transferred to the base part is efficiently dissipated from the base part. can do.

  In the light emitting device according to the present invention, the base portion is made of a material having a higher light reflectance than the varistor element body, and a through hole reaching the base portion is formed in the varistor element body. Thereby, one main surface of the base portion functions as a light reflecting surface, and one main surface of the base portion reflects light traveling toward the varistor among the light generated by the semiconductor light emitting element. As a result, the light emission efficiency of the light emitting device can be increased.

  Preferably, the base portion is made of metal, and the varistor portion is arranged on one main surface side of the base portion through a buffer portion made of an electrically insulating material, and the buffer portion includes a varistor element body. A through hole that is continuous with the formed through hole and reaches the base portion is formed. In this case, since the base portion is made of a metal having a relatively high thermal conductivity, the heat transferred to the varistor portion can be dissipated more efficiently from the base portion. Moreover, since the buffer portion is made of a material having electrical insulation, it is possible to prevent the buffer portion and the base portion from adversely affecting the electrical characteristics of the varistor portion. Of course, since the through-hole is also formed in the buffer portion, the light reflectivity of the varistor does not deteriorate.

  Preferably, the varistor part further includes at least a pair of internal electrodes arranged so as to sandwich at least a part of the varistor element body, and each internal electrode is connected to a corresponding external electrode of at least two external electrodes. ing.

  ADVANTAGE OF THE INVENTION According to this invention, the varistor and light-emitting device which can dissipate heat efficiently can be provided.

  Further, according to the present invention, it is possible to provide a varistor excellent in light reflectivity or a light emitting device excellent in luminous efficiency.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description, the same reference numerals are used for the same elements or elements having the same function, and redundant description is omitted.

  With reference to FIGS. 1-4, the structure of the light-emitting device L which concerns on this embodiment is demonstrated. FIG. 1 is a schematic perspective view showing a light emitting device according to this embodiment. FIG. 2 is a schematic cross-sectional view taken along the line II-II in FIG. FIG. 3 is a schematic cross-sectional view taken along the line III-III in FIG. FIG. 4 is a schematic cross-sectional view taken along line IV-IV in FIG.

  The light emitting device L includes a semiconductor light emitting element 1 and a varistor 10. The semiconductor light emitting device 1 is disposed on the varistor 10.

  First, the configuration of the varistor 10 will be described. The varistor 10 includes a varistor part 11, a buffer part 21, and a base part 31. The varistor portion 11 has a substantially rectangular parallelepiped shape, and includes a varistor element body 12, a first external electrode 13, a second external electrode 14, a first internal electrode 15, and a second internal electrode 16. have.

  The varistor element body 12 is made of a material having voltage non-linear characteristics (varistor characteristics), and has a first main surface 12a and a second main surface 12b. The first main surface 12 a and the second main surface 12 b constitute the main surface of the varistor part 11. The varistor element body 12 is configured as a laminated body in which a plurality of varistor layers made of a material having varistor characteristics are laminated. Actually, the varistor layers are integrated so that the boundary between the varistor layers is not visible.

  Each varistor layer is composed of a sintered body of a ceramic green sheet containing a ceramic material (semiconductor ceramic) mainly composed of ZnO. The ceramic materials include rare earth elements, Co, IIIb group elements (B, Al, Ga, In), Si, Cr, Mo, alkali metal elements (K, Rb, Cs), and alkaline earth metal elements (Mg) as subcomponents. , Ca, Sr, Ba) and the like, and oxides thereof. In the present embodiment, the varistor layer contains Pr, Co, Cr, Ca, Si, K, Al, and the like as subcomponents. The ceramic material may contain Bi instead of the rare earth element.

  A through-hole 19 that penetrates the varistor element body 12 from the first main surface 12a to the second main surface 12b is formed in a portion of the varistor element body 12 corresponding to the central region of the first main surface 12a. Yes.

  The first external electrode 13 and the second external electrode 14 have a substantially rectangular parallelepiped shape, and are partially exposed from the first main surface 12a and the second main surface 12b of the varistor element body 12. The varistor element body 12 is disposed through. The first external electrode 13 is located in a region between the region where the through hole 19 is formed and the edge 12c when viewed from the direction perpendicular to the first main surface 12a. The second external electrode 14 is located in a region between the region where the through hole 19 is formed and the edge 12d when viewed from the direction perpendicular to the first main surface 12a. The first external electrode 13 and the second external electrode 14 are arranged so as to face each other across the region where the through hole 19 is formed.

  The first external electrode 13 and the second external electrode 14 are made of, for example, a sintered body of conductive paste. As an electrically conductive paste, what mixed the organic binder and the organic solvent in the metal powder which has a metal particle (for example, Au particle | grains or Pt particle | grains) as a main component can be used. The first external electrode 13 and the second external electrode 14 function as input / output terminal electrodes and pad electrodes that are electrically connected to the semiconductor light emitting element 1. The number of external electrodes 13 and 14 may be plural, corresponding to the electrodes of the semiconductor light emitting device 1.

  The first internal electrode 15 and the second internal electrode 16 have a substantially rectangular shape when viewed from the direction perpendicular to the first main surface 12a, and the regions where the through holes 19 are formed and the edges 12e and 12f. Located in the area between. The first internal electrode 15 and the second internal electrode 16 are arranged so as to sandwich at least a part (at least one varistor layer) of the varistor element body 12. A region overlapping the first internal electrode 15 and the second internal electrode 16 in the varistor element body 12 (varistor layer) functions as a region expressing varistor characteristics.

  The first internal electrode 15 is electrically and physically connected to the first external electrode 13 at the end thereof. The second internal electrode 16 is electrically and physically connected to the second external electrode 14 at the end thereof. The first internal electrode 15 and the second internal electrode 16 are made of, for example, a sintered body of conductive paste. As an electrically conductive paste, what mixed the organic binder and the organic solvent in the metal powder which has a metal particle (for example, Pd particle | grains or Ag-Pd alloy particle | grains etc.) as a main component can be used.

  In the present embodiment, a plurality of internal electrode pairs composed of one first internal electrode 15 and one second internal electrode 16 are arranged across the region where the through hole 19 is formed. Only one of the internal electrode pairs may be arranged. A plurality of first internal electrodes 15 and second internal electrodes 16 may be arranged.

  The buffer unit 21 has a first main surface 21 a and a second main surface 21 b, and the first main surface 21 a is disposed so as to be in contact with the second main surface 12 b of the varistor element body 12. Yes. The buffer unit 21 is made of an electrically insulating material (for example, a material containing glass as a main component). When the material of the buffer part 21 is glass, the buffer part 21 will be comprised from the sintered compact of the glass paste which mixed glass powder, the organic binder, and the organic solvent. Examples of the glass used for the buffer unit 21 include bismuth oxide, zinc oxide, phosphoric acid, and borosilicate. The thickness of the buffer unit 21 is, for example, about 1 to 1000 μm.

  In the portion corresponding to the central region of the first main surface 21a in the buffer portion 21, the buffer portion 21 is connected to the second main surface 21a from the first main surface 21a continuously to the through hole 19 formed in the varistor element body 12. A through hole 23 penetrating the main surface 21b is formed. The inner diameter shape of the through hole 19 and the inner diameter shape of the through hole 23 are substantially the same.

  The base portion 31 has a first main surface 31a and a second main surface 31b, and has a substantially rectangular parallelepiped shape. The base portion 31 is disposed such that the first main surface 31 a is in contact with the second main surface 21 b of the buffer portion 21. As a result, the varistor part 11 is arranged on the first main surface 31 a side of the base part 31 via the buffer part 21. The base portion 31 is made of a metal having higher thermal conductivity and light reflectance than the varistor element body 12, for example, Ag or Cu. Ag is particularly preferable as the material of the base portion 31 because Ag has a reflectance of 90% or more over the entire visible light region.

  The through hole 19 reaches the first main surface 31 a of the base portion 31, and corresponds to the through holes 19 and 23 in the first main surface 31 a when viewed from the first main surface 12 a side of the varistor element body 12. The area to be exposed is exposed. The through holes 19 and 23 may be filled with a material that is optically transparent to light emitted from the semiconductor light emitting element.

  The buffer unit 21 preferably includes a substance and a compound or alloy contained in the varistor element body 12 as a subsidiary component, and a substance that produces a compound and compound or alloy contained in the base part 31. . Thereby, the buffer part 21, the varistor element body 12, and the base | substrate part 31 can be joined firmly. For example, when the varistor element body 12 includes Pr and the base portion 31 includes Ag, Pd can be used as a subcomponent. In this case, a Pr—Pd alloy is formed in the interface between the varistor element body 12 and the buffer portion 21 and in the vicinity of the interface, and an Ag—Pd alloy is formed in the interface between the base portion 31 and the buffer portion 21 and in the vicinity of the interface. It will be.

  Next, the configuration of the semiconductor light emitting element 1 will be described.

  The semiconductor light emitting element 1 is arranged on the varistor part 11 (varistor element body 12) so as to cover the region where the through hole 19 of the varistor element body 12 is formed.

  The semiconductor light-emitting element 1 is a light-emitting diode (LED) of a GaN (gallium nitride) semiconductor, and includes a substrate 2 and a layer structure formed on the substrate 2. GaN-based semiconductor LEDs are well known and will be described briefly. The substrate 2 is an optically transparent and electrically insulating substrate made of sapphire. The layer structure includes an n-type (first conductivity type) semiconductor region 3, a light emitting layer 4, and a p-type (second conductivity type) semiconductor region 5 which are stacked. The semiconductor light emitting element 1 emits light according to a voltage applied between the n-type semiconductor region 3 and the p-type semiconductor region 5.

  The n-type semiconductor region 3 includes an n-type nitride semiconductor. In this embodiment, the n-type semiconductor region 3 is formed by epitaxially growing GaN on the substrate 2 and has an n-type conductivity by adding an n-type dopant such as Si. Further, the n-type semiconductor region 3 may have a composition such that the refractive index is smaller than that of the light emitting layer 4 and the band gap is increased. In this case, the n-type semiconductor region 3 serves as a lower cladding for the light emitting layer 4.

  The light emitting layer 4 is formed on the n-type semiconductor region 3, and carriers (electrons and holes) supplied from the n-type semiconductor region 3 and the p-type semiconductor region 5 are recombined to emit light in the light-emitting region. Is generated. The light emitting layer 4 can have, for example, a multiple quantum well (MQW) structure in which barrier layers and well layers are alternately stacked over a plurality of periods. In this case, the barrier layer and the well layer are made of InGaN, and the band gap of the barrier layer is configured to be larger than the band gap of the well layer by appropriately selecting the composition of In (indium). The light emitting region is generated in a region where carriers are injected in the light emitting layer 4.

  The p-type semiconductor region 5 includes a p-type nitride semiconductor. In the present embodiment, the p-type semiconductor region 5 is formed by epitaxially growing AlGaN on the light emitting layer 4 and has p-type conductivity by adding a p-type dopant such as Mg. The p-type semiconductor region 5 may have a composition that has a refractive index smaller than that of the light emitting layer 4 and a larger band gap. In this case, the p-type semiconductor region 5 serves as an upper cladding for the light emitting layer 4.

  A cathode electrode 6 is formed on the n-type semiconductor region 3. The cathode electrode 6 is made of a conductive material and realizes ohmic contact with the n-type semiconductor region 3. An anode electrode 7 is formed on the p-type semiconductor region 5. The anode electrode 7 is made of a conductive material, and has an ohmic contact with the p-type semiconductor region 5. Bump electrodes 8 are formed on the cathode electrode 6 and the anode electrode 7.

  In the semiconductor light emitting device 1 having the above-described configuration, when a predetermined voltage is applied between the anode electrode 7 (bump electrode 8) and the cathode electrode 6 (bump electrode 8) and a current flows, the light emitting region 4 emits light. Luminescence will occur.

  The semiconductor light emitting element 1 is bump-connected to the external electrodes 13 and 14. That is, the anode electrode 7 is electrically and physically connected to the first external electrode 13 via the bump electrode 8. The cathode electrode 6 is electrically and physically connected to the second external electrode 14 via the bump electrode 8. Thereby, the varistor (the portion constituted by the first internal electrode 15, the second internal electrode 16, and the region overlapping the internal electrodes 15, 16 in the varistor element body 12) is connected in parallel to the semiconductor light emitting element 1. Will be.

  As described above, according to this embodiment, since the varistor 10 is connected in parallel to the semiconductor light emitting element 1, the semiconductor light emitting element 1 can be protected from an ESD surge.

  In the present embodiment, since the semiconductor light emitting element 1 is physically connected to the external electrodes 13 and 14 of the varistor 10, the heat generated in the semiconductor light emitting element 1 passes through the external electrodes 13 and 14. Will be transmitted to the varistor section 11. The heat transferred to the varistor part 11 is transferred to the base part 31. Since the base part 31 is made of a material having a higher thermal conductivity than the varistor element body 12, the heat transferred to the base part 31 is transferred to the base part 31. It is possible to efficiently dissipate from the portion 31. In particular, since the base portion 31 is made of a metal having a relatively high thermal conductivity, the heat transmitted to the varistor portion 11 can be dissipated from the base portion 31 more efficiently. In addition, since the first external electrode 13 and the second external electrode 14 have a substantially rectangular parallelepiped shape, the heat transfer path from the semiconductor light emitting element 1 to the base portion 31 becomes relatively large, and heat is efficiently generated. Can communicate.

  The heat transmitted to the external electrodes 13 and 14 is also dissipated by being transmitted to the corresponding internal electrodes 15 and 16. Thereby, the heat radiation path of the heat generated in the semiconductor light emitting element 1 is expanded, and the heat generated in the semiconductor light emitting element 1 can be efficiently dissipated. By the way, the varistor element body 12 (varistor layer) contains ZnO as a main component. ZnO has a thermal conductivity comparable to that of alumina or the like normally used as a heat dissipation substrate, and has a relatively good thermal conductivity. Therefore, it is possible to suppress the heat dissipation from the internal electrodes 15 and 16 from being inhibited by the varistor element body 12.

  In the present embodiment, the base portion 31 is made of a metal having a light reflectance higher than that of the varistor element body 12, and through-holes 19 and 23 reaching the base portion 31 are formed in the varistor element body 12 and the buffer portion 21. . Therefore, the first main surface 31a of the base portion 31 functions as a light reflecting surface, and the light traveling toward the varistor 10 among the light generated by the semiconductor light emitting element 1 is the varistor element body 12 and the buffer portion 21. The first main surface 31a of the base portion 31 is incident and reflected through the through holes 19 and 23 formed in the first and second holes. Therefore, the light reflectivity of the varistor 10 can be increased, and the light emission efficiency of the light emitting device L can be increased.

  In the present embodiment, since the buffer unit 21 is made of an electrically insulating material, the buffer unit 21 and the base unit 31 can be prevented from adversely affecting the electrical characteristics of the varistor unit 11.

  Then, with reference to FIGS. 5-14, the structure of the 1st-3rd modification of a varistor is demonstrated.

  In the first modification shown in FIGS. 5 to 7, the varistor portion 11 further includes a through-hole conductor 41, and the first external electrode 13 and the second external electrode 14 are the varistor element body 12. It arrange | positions on the 1st main surface 12a. The schematic cross-sectional view shown in FIG. 5 is a schematic cross-sectional view when the varistor 10 according to the modification is cut along a line corresponding to the line II-II shown in FIG. The cross-sectional view shown in FIG. 6 is a schematic cross-sectional view when the varistor 10 according to the modification is cut along a line corresponding to the line III-III shown in FIG. The cross-sectional view shown in FIG. 7 is a schematic cross-sectional view when the varistor 10 according to the modification is cut along a line corresponding to the IV-IV line shown in FIG.

  The through-hole conductor 41 is disposed on the varistor element body 12 so that one end is exposed from the first main surface 12 a of the varistor element body 12. The through-hole conductor 41 is electrically and physically connected to the corresponding external electrodes 13 and 14 at one end exposed at the first main surface 12a. The through-hole conductor 41 is electrically and physically connected to the corresponding internal electrodes 15 and 16 in the middle part thereof. As a result, the external electrodes 13 and 14 and the corresponding internal electrodes 15 and 16 are electrically connected through the through-hole conductor 41. The through-hole conductor 41 can be composed of a sintered body of the conductive paste described above.

  In the second modification shown in FIGS. 8 to 11, the varistor section 11 has a counter electrode 43 instead of the first internal electrode 15 and the second internal electrode 16. FIG. 8 is a schematic perspective view showing a second modification of the varistor. FIG. 9 is a schematic cross-sectional view along the line IX-IX in FIG. FIG. 10 is a schematic cross-sectional view along the line XX in FIG. FIG. 11 is a schematic cross-sectional view along the line XI-XI in FIG.

  The counter electrode 43 is disposed on at least a part of the varistor element body 12 (at least one varistor layer) on the first external electrode 13 and the second external electrode 14 disposed on the first main surface 12a of the varistor element body 12. ) Across the board. Similar to the first internal electrode 15 and the second internal electrode 16, the counter electrode 43 has a substantially rectangular shape when viewed from the direction perpendicular to the first main surface 12 a and the through-hole 19 is formed. It is located in the area between the area and the edges 12e, 12f. The counter electrode 43 is disposed so as to be exposed on the second main surface 12b of the varistor element body 12. However, the counter electrode 43 may be disposed in the varistor element body 12 without being exposed on the second main surface 12b. Good. The counter electrode 43 can be composed of a sintered body of the conductive paste described above.

  A region of the varistor element body 12 (varistor layer) that overlaps the counter electrode 43 and the external electrodes 13 and 14 functions as a region that exhibits varistor characteristics. That is, the counter electrode 43, the first external electrode 13, and the first portion having a varistor function, which is configured by the region overlapping the counter electrode 43 and the first external electrode 13 in the varistor element body 12, The electrode 43, the second external electrode 14, and a second portion having a varistor function configured by a region overlapping the counter electrode 43 and the second external electrode 14 in the varistor element body 12, The external electrode 13 and the second external electrode 14 are electrically connected in series.

  In the third modification shown in FIGS. 12 to 14, the varistor portion 11 does not have electrodes corresponding to the internal electrodes 15 and 16 and the counter electrode 43. In this case, a region located between the first external electrode 13 and the second external electrode 14 in the varistor element body 12 functions as a region that develops varistor characteristics. The schematic cross-sectional view shown in FIG. 12 is a schematic cross-sectional view when the varistor 10 according to the modification is cut along a line corresponding to the line IX-IX shown in FIG. The schematic cross-sectional view shown in FIG. 13 is a schematic cross-sectional view when the varistor 10 according to the modification is cut along a line corresponding to the line XX shown in FIG. The schematic cross-sectional view shown in FIG. 14 is a schematic cross-sectional view when the varistor 10 according to the modification is cut along a line corresponding to the XI-XI line shown in FIG.

  The preferred embodiments of the present invention have been described above. However, the present invention is not necessarily limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention.

  For example, the shapes of the varistor part 11, the buffer part 21, and the base part 31 constituting the varistor 10 are not limited to those illustrated. Similarly, the shape of the varistor element body 12, the first external electrode 13, the second external electrode 14, the first internal electrode 15, and the second internal electrode 16 included in the varistor part 11, and the through holes 19, The shape of 23 is not limited to the illustrated one.

  The base portion 31 may not be a metal as long as it has a higher thermal conductivity and light reflectance than the varistor element body 12. The base portion 31 can be made of, for example, AlN, SiC, or the like.

  In the case where the base portion 31 is a material further having electrical insulation, the buffer portion 21 is not necessarily required. In this case, the varistor portion 11 is arranged so that the second main surface 12 b is in contact with the first main surface 31 a of the base portion 31.

  By the way, when the varistor part 11 is arranged so that the second main surface 12b is in contact with the first main surface 31a of the base part 31, the varistor part 11 and the base part 31 are formed by simultaneous firing. The varistor may be deformed or cracks may be generated due to the difference between the shrinkage rate and the base portion 31. In particular, when the varistor element body 12 is made of a ceramic material and the base portion 31 is made of a metal, the difference in shrinkage rate during firing becomes large, and the above-described problem becomes significant. For this reason, the buffer part 21 is positioned between the varistor part 11 and the base part 31, and the material of the buffer part 21 is reduced by the shrinkage rate of the material constituting the varistor element body 12 and the shrinkage of the material constituting the base part 31. It is preferable that the material has a shrinkage rate intermediate to the rate.

  In the present embodiment, a light-emitting diode of a GaN-based semiconductor LED is used as the semiconductor light-emitting element 1, but the present invention is not limited to this. As the semiconductor light emitting element 1, for example, a nitride semiconductor LED other than GaN-based (for example, InGaNAs-based semiconductor LED), a compound semiconductor LED other than nitride-based, or a laser diode (LD) may be used. .

  In the present embodiment, the semiconductor light emitting device 1 is mounted on the varistor by flip chip bonding and is electrically connected to the varistor 10, but the present invention is not limited to this. For example, the semiconductor light emitting element 1 is fixed on the varistor 10 so as to cover the through holes 19 and 23 with a gold-tin alloy (Au—Sn) solder or an adhesive, and is electrically connected to the varistor 10 by wire bonding. Also good.

It is a perspective view which shows the light-emitting device which concerns on this embodiment. It is a schematic sectional drawing in alignment with the II-II line | wire in FIG. It is a schematic sectional drawing in alignment with the III-III line in FIG. It is a schematic sectional drawing in alignment with the IV-IV line in FIG. It is a schematic sectional drawing which shows the 1st modification of a varistor. It is a schematic sectional drawing which shows the 1st modification of a varistor. It is a schematic sectional drawing which shows the 1st modification of a varistor. It is a schematic perspective view which shows the 2nd modification of a varistor. It is a schematic sectional drawing in alignment with the IX-IX line in FIG. It is a schematic sectional drawing in alignment with the XX line in FIG. It is a schematic sectional drawing in alignment with the XI-XI line in FIG. It is a schematic sectional drawing which shows the 3rd modification of a varistor. It is a schematic sectional drawing which shows the 3rd modification of a varistor. It is a schematic sectional drawing which shows the 3rd modification of a varistor.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Semiconductor light emitting element, 10 ... Varistor, 11 ... Varistor part, 12 ... Varistor element | base_body, 12a ... 1st main surface, 12b ... 2nd main surface, 13 ... 1st external electrode, 14 ... 2nd External electrode, 15 ... first internal electrode, 16 ... second internal electrode, 19 ... through hole, 21 ... buffer portion, 21a ... first main surface, 21b ... second main surface, 23 ... through hole, 31 ... Base part, 31a ... 1st main surface, 31b ... 2nd main surface, L ... Light-emitting device.

Claims (6)

A base part;
A varistor part that is arranged on one main surface side of the base part and has a varistor element body that expresses voltage nonlinear characteristics and at least two external electrodes;
The base portion is made of a material having higher thermal conductivity and light reflectance than the varistor element body,
The varistor element body is formed with a through hole reaching the base portion. The base portion is made of metal,
The varistor part is disposed on the one main surface side of the base part through a buffer part made of an electrically insulating material,
2. The varistor according to claim 1, wherein the buffer part is formed with a through hole that is continuous with the through hole formed in the varistor element body and reaches the base part. The varistor part further includes at least a pair of internal electrodes arranged to sandwich at least a part of the varistor element body;
The varistor according to claim 1, wherein each of the internal electrodes is connected to a corresponding external electrode of the at least two external electrodes. A light emitting device including a varistor and a semiconductor light emitting element,
The varistor is
A base part;
A varistor part that is arranged on one main surface side of the base part and has a varistor element body that expresses voltage nonlinear characteristics and at least two external electrodes;
The base portion is made of a material having higher thermal conductivity and light reflectance than the varistor element body,
In the varistor element body, a through hole reaching the base portion is formed,
The light-emitting device, wherein the semiconductor light-emitting element is physically and electrically connected to the at least two external electrodes so as to be connected in parallel to the varistor. The base portion is made of metal,
The varistor part is disposed on the one main surface side of the base part through a buffer part made of an insulating material,
The light emitting device according to claim 4, wherein the buffer portion includes a through hole that is continuous with the through hole formed in the varistor element body and reaches the base portion. The varistor part further includes at least a pair of internal electrodes arranged to sandwich at least a part of the varistor element body;
5. The light emitting device according to claim 4, wherein each of the internal electrodes is connected to a corresponding external electrode of the at least two external electrodes.

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