TWI484672B - Light emitting diode structure and fabricating method thereof - Google Patents

Description

Light-emitting diode structure and manufacturing method thereof

The present invention relates to a photovoltaic element structure and a method of fabricating the same, and more particularly to a light emitting diode structure (LED structure) and a method of fabricating the same.

With the development of the technology of the Light Emitting Diode (LED), the light-emitting diode has been gradually replaced by the conventional light bulb and used in the field of illumination. Since the conventional light-emitting diodes are driven by direct current, they can only be used in a DC-driven environment; or, an AC-DC power converter and a transformer are required to convert a commercial alternating current into a low-voltage direct current to provide a light-emitting diode. Body use.

However, general commercial power consumption is 110V/220V AC power. Therefore, it is conventionally known that a DC light-emitting diode has a problem of inconvenient use. In view of the above, some researchers have developed AC light-emitting diodes (AC LEDs) or high-voltage light-emitting diodes (HV LEDs). The AC light-emitting diodes do not require an additional transformer, rectifier or drive circuit. The AC light-emitting diode is driven, and the high-voltage light-emitting diode (HV LED) does not need to be converted into a low-voltage direct current, and can be driven by a general direct current, thereby reducing the energy loss generated by the transformer.

The current AC/high-voltage LEDs are formed on a single-chip of a relatively small size to form an LED unit matrix and a metal interconnection, which are connected in series or in parallel using interconnect lines. A light-emitting diode unit is provided for the AC/high voltage light-emitting diode to have characteristics of adjustable voltage and current. However, the process of fabricating the interconnect wiring on a single wafer is quite complicated, and in the process of fabricating the interconnect wiring on a single wafer, the problem of disconnection or poor contact of the interconnect wiring often occurs. As a result, the production yield of the AC light-emitting diode is low, and the AC/high voltage light-emitting diode is prone to leakage.

In view of this, the present invention provides a light-emitting diode structure that can directly use alternating current or high-voltage direct current, has good fabrication yield, and can reduce leakage.

The invention provides a method for manufacturing a light-emitting diode structure, which has a simple process, can achieve good production yield, and can reduce leakage phenomenon.

The invention provides a light emitting diode structure, comprising: a light emitting chip and a conductive bracket. The light emitting wafer has a plurality of light emitting diode units. The conductive support has an electrical connection line and at least one pair of electrodes electrically connected to the electrical connection line, wherein the light emitting diode unit is opposite to the electrical connection line, and the light emitting diode units are electrically connected to each other via the electrical connection line .

The present invention also provides a method of fabricating a light emitting diode structure comprising the following steps. An illuminating wafer is provided, and a plurality of illuminating diode units are formed on the illuminating wafer. A conductive support is provided. The conductive support has an electrical connection line and at least one pair of electrodes electrically connected to the electrical connection line. The light-emitting diode and the conductive support are combined, wherein the light-emitting diode unit is opposite to the electrical connection line, and the light-emitting diode units are electrically connected to each other via the electrical connection line.

In an embodiment of the invention, the electrical connection line includes: an inner connection line and an outer connection line. The inner connecting lines are disposed corresponding to the light emitting diode units, and the light emitting diode units are electrically connected to each other by the inner connecting lines. The external connection line is disposed on the outer side of the inner connection line, and the inner connection line and the pair of electrodes are electrically connected by the outer connection line.

In an embodiment of the invention, the light emitting diode unit has (nxm) and is arranged on the light emitting wafer in an array of (nxm), and the m rows and the m rows of the n rows are electrically connected. The light emitting diode units are connected in series to each other to form a light emitting diode unit group, and become n light emitting diode unit groups, and the n light emitting diode unit groups are connected in parallel with each other, wherein n and m are larger than A natural number of 1, n is equal to or not equal to m.

In an embodiment of the invention, the light emitting diode unit has (nxm) and is arranged in an array of (nxm) on the light emitting chip, and the electrical connection line is used to make the n rows and the rows. The m light emitting diode units are connected in series to each other to form a light emitting diode unit group, and become n light emitting diode unit groups, and the n light emitting diode unit groups are connected in series with each other, wherein n and m are A natural number greater than 1, n equal to or not equal to m.

In an embodiment of the invention, the electrical connection line is a Wheatstone bridge, and the LED units are electrically connected to each other.

In an embodiment of the invention, the light emitting diode structure further comprises: an insulating unit disposed on the light emitting chip, wherein the insulating unit is separated by the light emitting diode unit, so that the light emitting diode units are electrically insulated from each other.

In an embodiment of the invention, a portion of the above-described light emitting diode unit is embedded in an electrical connection line of the conductive support.

In an embodiment of the invention, each of the light emitting diode units includes: a first contact and a second contact, and electrically connecting the LED unit to the second contact via the first contact and the second contact Electrical connection line.

In an embodiment of the invention, the light emitting diode structure is a flip-chip light emitting diode structure, and the light emitting chip and the conductive support each have an upper surface and a lower surface, and the light emitting diode unit is disposed under the light emitting chip. The surface and the electrical connection line are disposed on the upper surface of the conductive bracket.

In an embodiment of the invention, the light emitting diode structure further includes: an external electronic device, and the light emitting diode structure is connected to the external electronic device via the pair of electrodes.

In an embodiment of the invention, the light emitting diode structure further includes: a conductive element disposed between the light emitting diode unit and the electrical connection line.

Based on the above, the light-emitting diode structure of the present invention has an electrical connection line formed on an external conductive support, and a plurality of light-emitting diode units on the light-emitting chip are connected in series and in parallel by an external electrical connection line. Therefore, it is not necessary to simultaneously fabricate an electrical connection line (interconnection process) in the process of the light-emitting chip, and the process of the light-emitting chip can be simplified. In addition, the internal connection is replaced by an externally-made electrical connection line, and the phenomenon of disconnection is less likely to occur, so that the leakage problem of the light-emitting diode structure can be effectively solved. Furthermore, with the above-described light-emitting diode structure, the design of the electrical connection line can be performed according to a predetermined voltage or current required by the customer, so that the same light-emitting chip can be combined with different conductive supports, that is, can have different reservations. Voltage or current. Therefore, the above-described light-emitting diode structure can achieve very good product compatibility.

The above described features and advantages of the present invention will be more apparent from the following description.

[Light emitting diode structure]

FIG. 1 is a perspective exploded view of a light emitting diode structure according to a preferred embodiment of the present invention. Referring to FIG. 1 , the LED structure 100 includes an illuminating wafer 110 and a conductive support 120 . The light emitting wafer 110 has a plurality of light emitting diode units 112 (four shown in FIG. 1). The conductive support 120 has an electrical connection line 122 and at least a pair of electrodes 124a, 124b electrically connected to the electrical connection line 122. The light emitting diode unit 112 is opposite to the electrical connection line 122, and the light emitting diode unit 112 is electrically connected to each other via the electrical connection line 122.

Referring to FIG. 1 , the LED structure 100 may be a flip-chip LED structure, and the LED wafer 110 and the conductive bracket 120 respectively have an upper surface US and a lower surface LS, and the LED unit 112 . The lower surface LS of the light emitting wafer 110 is disposed on the upper surface US of the conductive support 120. The light-emitting chip 110 and the conductive support 120 can be more easily combined by the design of the flip-chip light-emitting diode structure. However, the light-emitting diode structure 100 is not limited to the flip-chip light-emitting diode structure, and the light-emitting wafer 110 and the conductive support may be electrically connected by wire bonding.

In addition, a portion of the LED unit 112 can be embedded in the electrical connection line 122 of the conductive support 120. Specifically, referring to FIG. 1 , the conductive bracket 120 may have a plurality of recessed regions R , each recessed region R corresponding to each of the LED units 112 , and the electrical connection line 122 disposed in the recessed region R . Since a portion of each of the light emitting diode units 112 can be embedded in the recessed region R, alignment and bonding between the light emitting wafer 110 and the conductive support 120 can be easily performed, and the thickness of the entire light emitting diode structure 100 can be reduced. .

As shown in FIG. 1 , the electrical connection relationship between the plurality of LED units 112 on the illuminating wafer 110 (eg, series, parallel, and combinations thereof) is performed by the external conductive bracket 120 . The electrical connection line 122 is achieved, and no electrical connection lines are formed on the light-emitting wafer 110. Thereby, the predetermined electrical connection line 122 can be previously set on the external conductive support 120 according to a predetermined voltage or current required by the customer. As a result, after combining the light-emitting wafer 110 and the conductive support 120, the plurality of light-emitting diode units 112 can be connected in series and in parallel with each other according to a predetermined electrical connection relationship of the electrical connection lines 122, so that the light-emitting diode structure 100 obtains the above. Predetermined voltage or current. Such a light-emitting diode structure 100 has better product compatibility, i.e., the desired predetermined voltage or current is obtained by using the light-emitting wafer 110 in conjunction with the conductive support 120 having the desired electrical connection line 122.

In addition, since the electrical connection line 122 is formed on the outer conductive holder 120, it is not necessary to simultaneously manufacture an electrical connection line (interconnection process) in the process of the light-emitting chip 110, so that the process of the light-emitting wafer 110 can be simplified. In addition, the electrical connection line 122 is formed on the external conductive support 120, and the disconnection is less likely to occur during the manufacturing process. Therefore, the leakage phenomenon of the conventional AC light-emitting diode can be effectively solved, and the light emission can be improved. The yield of the diode structure 100 is good. Hereinafter, various embodiments of the above-described light-emitting wafer 110 will be described by way of example with reference to FIGS. 2 to 4 .

2 is a perspective view of a light-emitting wafer according to a preferred embodiment of the present invention, and FIG. 2 is a schematic bottom view of the light-emitting chip. Referring to FIG. 2, the illuminating wafer 110 has a plurality of illuminating diode units 112, and four illuminating diode units 112 are illustrated in FIG. 2, but are not limited thereto. The number of light emitting diode units 112 can be adjusted according to design needs.

The light emitting diode structure 110 may include an insulating unit 114 disposed on the light emitting wafer 110. The insulating unit 114 partitions the plurality of light emitting diode units 112 to electrically insulate the light emitting diode units 112 from each other. The insulating unit 114 is, for example, a cross-shaped trench disposed between the light emitting diode units 112.

Each of the light emitting diode units 112 may include a first contact 112a and a second contact 112b, and electrically connect the LED unit 112 to the electrical connection line 122 via the first contact 112a and the second contact 112b. (Also refer to Figure 1). The first contact 112 and the second contact 112b may be embedded in the recessed region R to be electrically connected to the electrical connection line 122.

3 is a schematic view showing the arrangement of a plurality of light emitting diode units of an illuminating wafer according to a preferred embodiment of the present invention. Referring to FIG. 3, the light emitting diode unit 112 has (n x m) arrays arranged on the light emitting wafer 110 in an array of (n x m). The m light-emitting diode units 112 of the n rows and the rows of the n rows are connected in series to form a light-emitting diode unit group 112G by the electrical connection line 122 as shown in FIG. 1 to become n light-emitting diode units. Group 112G, and the n light emitting diode unit groups 112G are connected in parallel with each other, wherein n, m are natural numbers greater than 1, and n is equal to or not equal to m.

For example, when n is equal to 2 and m is equal to 2 (n is equal to m), the light emitting wafer 110 has four light emitting diode units 112, and the light emitting diode units 112 are arranged in a (2 x 2) array on the light emitting wafer. 110 on. The two LED units 112 of the two rows and the two rows are connected in series to form one LED unit 112G, and become two LED units by the electrical connection line 122 as shown in FIG. Group 112G, and the two light emitting diode unit groups 112G are connected in parallel with each other.

In another example, when n is equal to 2, m is equal to 3 (n is not equal to m), the light emitting wafer 110 has 6 light emitting diode units 112, and the light emitting diode units 112 are arranged in a (2 x 3) array. On the light emitting wafer 110. The three light-emitting diode units 112 of the two rows and the two rows of the two rows are connected in series to form one light-emitting diode unit group 112G to form two light-emitting diode units by the electrical connection line 122 as shown in FIG. Group 112G, and the two light emitting diode unit groups 112G are connected in parallel with each other. The above n and m can be selected according to actual design requirements, and are not limited herein.

4 is a schematic cross-sectional view of a light-emitting chip. From FIG. 4, two light-emitting diode units electrically insulated from each other, and an electrical connection manner of the light-emitting diode unit and the conductive support can be seen. Referring to FIG. 4 , the illuminating wafer 110 is formed on the non-semiconductor substrate S (for example, a sapphire substrate) by using an epitaxial process to form a plurality of illuminating diode units 112 (two are shown in FIG. 4 ). The light emitting diode units 112 are electrically insulated from each other by an insulating unit 114 (for example, a trench).

It should be noted that each of the light emitting diode units 112 may include: a first contact 112a, a second contact 112b, a first type doped semiconductor layer 112c (eg, an n-type doped semiconductor layer), and a second type of doping The semiconductor layer 112d (for example, a P-type doped semiconductor layer) and the light-emitting layer 112e. The first type doped semiconductor layer 112c is disposed on the non-semiconductor substrate S. The light emitting layer 112e is disposed on the first type doped semiconductor layer 112c. The second type doped semiconductor layer 112d is disposed on the light emitting layer 112e. That is, the light emitting layer 112e is located between the first type doped semiconductor layer 112c and the second type doped semiconductor layer 112d. The first contact 112a is disposed on the first type doped semiconductor layer 112c and electrically connected to the first type doped semiconductor layer 112c. The second contact 112b is disposed on the second type doped semiconductor layer 112d and electrically connected to the second type doped semiconductor layer 112d.

It can be noted that the LED structure 100 can further include: a conductive element 130 disposed between the LED unit 112 and the electrical connection line 122. The conductive member 130 may be made of silver paste, conductive bumps, anisotropic conductive paste, or the like, disposed between the first contact 112a and the electrical connection line 122, and between the second contact 112b and the electrical connection line 122. The LED unit 112 and the electrical connection line 122 are electrically connected to each other.

In addition, referring to FIG. 4 , the LED structure 100 may further include: an external electronic device 140 , and the LED structure 100 is connected to the external electronic device 140 via the pair of electrodes 124 a , 124 b . The external electronic device 140 may be an alternating current power source, supplying a predetermined voltage to the light emitting diode structure 100; or a circuit for further adjusting the electronic characteristics of the light emitting diode structure 100; or a circuit board for controlling the light emitting diode structure 100; And so on, appropriate external electronics 140 can be used as needed for the design. That is to say, the LED structure 100 incorporating the illuminating wafer 110 and the conductive support 120 can be regarded as an integral device and connected to the external electronic device 140 to further adjust and control the LED structure 100.

Hereinafter, an embodiment of the conductive holder 120 will be described by way of example with reference to FIG. 5A. FIG. 5A is a perspective view of a conductive bracket according to a preferred embodiment of the present invention, and FIG. 5A is a schematic top view of the conductive bracket. Referring to FIG. 1 and FIG. 5A simultaneously, in the conductive bracket 120, the electrical connection line 122 may include an inner connecting line 122a and an outer connecting line 122b. The inner connecting line 122a is provided corresponding to the light emitting diode unit 112, and the light emitting diode units 112 are electrically connected to each other by the inner connecting line 122a. The outer connecting line 122b is disposed on the outer side of the inner connecting line 122a, and is electrically connected to the inner connecting line 122a and the pair of electrodes 124a, 124b by the outer connecting line 122b. As can be seen from FIG. 5, the conductive support 120 has a cross-shaped protrusion to further fit the insulating unit 114 (cross-shaped trench) of the light-emitting chip 110, enabling good alignment between the conductive support 120 and the light-emitting chip 110. .

As can be seen from Figures 1 and 5A, the light-emitting diode unit 112 has four, forming a (2 x 2) array arrangement. The inner connecting line 122a can be combined with the first contact 112a and the second contact 112b so that the two light emitting diode units 112 of the same row are connected in series to each other to form two light emitting diode unit groups 112G. Then, the external connection line 122b can connect the two LED units 112G in parallel with each other, that is, in the embodiment of FIG. 5A, the two-series, two-parallel electrical connection is used to electrically connect the light. Diode unit 112. The same series and parallel modes have been described in FIG.

FIG. 5B is a top plan view of another conductive support according to a preferred embodiment of the present invention. Referring to FIG. 2 and FIG. 5B simultaneously, the LED unit 112 may have (nxm) and arranged in an array of (nxm) on the light-emitting chip 110, where n and m are natural numbers greater than 1, and n is equal to or not equal to m. In this embodiment, n = 2 and m = 2.

It can be noted that, as shown in FIG. 5B, the two light-emitting diode units 112 of the two rows and the two rows are connected in series to form one light-emitting diode unit group by the electrical connection line 122, and become two light-emitting diodes. The body unit group, and the two light emitting diode unit groups are connected in series with each other. That is to say, in the embodiment of FIG. 5B, all of the LED units 112 can be electrically connected in a full series by the electrical connection line 122.

In addition, the electrical connection line 122 can also be designed as a Wheatstone bridge (not shown) to electrically connect the plurality of LED units 112 to each other. The design of the electrical connection line 122 is not limited herein, and the electrical connection may be designed as long as the required predetermined voltage or current is met.

In summary, the LED structure 100 is formed on the external conductive support by the electrical connection line, and the plurality of light-emitting diode units on the light-emitting chip are connected in series and in parallel by an external electrical connection line. Therefore, the process of the light-emitting chip can be simplified, the leakage problem of the light-emitting diode structure can be solved, and the design of the electrical connection line can be performed in advance according to a predetermined voltage or current required by the customer, and a very good product compatibility can be achieved.

[Manufacturing method of light-emitting diode structure]

FIG. 6 is a flow chart showing the steps of a method for fabricating a light emitting diode structure according to a preferred embodiment of the present invention. Referring to FIG. 6 , the method 200 for manufacturing a light emitting diode structure includes steps S210 to S230 , and the method of manufacturing the light emitting diode structure 200 will be understood with reference to FIGS. 1 to 5 .

In step S210, an illuminating wafer 110 is provided, and a plurality of illuminating diode units 112 are formed on the illuminating wafer 110. In one embodiment, the light-emitting diode 110 is formed by, for example, forming an insulating unit 114 on the non-semiconductor substrate S to form a plurality of regions, and then forming a light-emitting diode unit 112 by using a thin film deposition process, a lithography process, or the like in each region. . Each of the light emitting diode units 112 may have: a first contact 112a, a second contact 112b, a first type doped semiconductor layer 112c (eg, an n-type doped semiconductor layer), and a second type doped semiconductor layer 112d ( For example, a P-type doped semiconductor layer) and a light-emitting layer 112e.

In step S220, a conductive support 120 is provided. The conductive support 120 has an electrical connection line 122 and at least one pair of electrodes 124a, 124b electrically connected to the electrical connection line 122. In one embodiment, a substrate can be provided, and an electrical connection line 122 and a pair of electrodes 124a, 124b are formed on the substrate by a thin film deposition process and a photolithography process to complete the fabrication of the conductive support 120.

In step S230, the light emitting wafer 110 and the conductive support 120 are combined, wherein the light emitting diode unit 112 is opposite to the electrical connection line 122, and the light emitting diode unit 112 is electrically connected to each other via the electrical connection line 122. In the process of combining the light-emitting wafer 110 and the conductive support 120, the conductive element 130 (such as silver paste, conductive bump, anisotropic conductive adhesive, etc.) can be utilized to ensure a good electrical connection.

The above steps S210 and S220 can be interchanged, as long as step S230 is finally performed to combine the light emitting wafer 110 and the conductive support 120. Various embodiments of the light-emitting wafer 110 and the conductive support 120 have been described above, and will not be repeated here.

In summary, the LED structure of the present invention and the method of fabricating the same have at least the following advantages:

The electrical connection lines are formed on the outer conductive support, and the plurality of light-emitting diode units on the light-emitting wafer are connected in series and in parallel by an external electrical connection line. Therefore, in the process of the light-emitting chip, it is not necessary to simultaneously make an electrical connection line, and the process of the light-emitting chip can be simplified. Moreover, the electrical connection line formed outside is less likely to be broken, and the leakage problem of the light-emitting diode structure can be effectively solved. Furthermore, the design of the electrical connection line can be carried out in advance according to a predetermined voltage or current required by the customer, and the light-emitting chip can be combined with the required conductive support to obtain a desired predetermined voltage or current, which can achieve very good product compatibility. Sex.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

100. . . Light-emitting diode structure

110. . . Light emitting chip

112. . . Light-emitting diode unit

112a. . . First contact

112b. . . Second contact

112c. . . First type doped semiconductor layer

112d. . . Second type doped semiconductor layer

112e. . . Luminous layer

112G. . . Light-emitting diode unit

114. . . Insulation unit

120. . . Conductive bracket

122. . . Electrical connection line

122a. . . Internal connection line

122b. . . External connection line

130. . . Conductive component

140. . . External electronic device

124a, 124b. . . electrode

200. . . Method for manufacturing light emitting diode structure

LS. . . lower surface

R. . . Sag area

S. . . Non-conductor substrate

S210～S230. . . step

US. . . Upper surface

FIG. 1 is a perspective exploded view of a light emitting diode structure according to a preferred embodiment of the present invention.

2 is a perspective view of a light-emitting wafer according to a preferred embodiment of the present invention, and FIG. 2 is a schematic bottom view of the light-emitting chip.

3 is a schematic view showing the arrangement of a plurality of light emitting diode units of an illuminating wafer according to a preferred embodiment of the present invention.

4 is a schematic cross-sectional structural view of a light-emitting diode. From FIG. 4, two light-emitting diode units electrically insulated from each other, and an electrical connection manner of the light-emitting diode unit and the conductive support can be seen.

FIG. 5A is a perspective view of a conductive bracket according to a preferred embodiment of the present invention, and FIG. 5A is a schematic top view of the conductive bracket.

FIG. 5B is a top plan view of another conductive support according to a preferred embodiment of the present invention.

FIG. 6 is a flow chart showing the steps of a method for fabricating a light emitting diode structure according to a preferred embodiment of the present invention.

100. . . Light-emitting diode structure

110. . . Light emitting chip

112. . . Light-emitting diode unit

112a. . . First contact

112b. . . Second contact

120. . . Conductive bracket

122. . . Electrical connection line

124a, 124b. . . electrode

LS. . . lower surface

R. . . Sag area

US. . . Upper surface

Claims (22)

An illuminating diode structure comprising: a luminescent wafer having a plurality of illuminating diode units; and a conductive support having an electrical connection line and at least one pair of electrodes electrically connected to the electrical connection line; The light emitting diode units are opposite to the electrical connection line, and the light emitting diode units are electrically connected to each other in series, in parallel or in series and parallel via the electrical connection line. The light-emitting diode structure of claim 1, wherein the electrical connection line comprises: an inner connecting line, corresponding to the light-emitting diode units, wherein the inner connecting lines are used to make the light-emitting diodes The light emitting diode units are electrically connected to each other; and an outer connecting line is disposed on an outer side of the inner connecting line, and the inner connecting line and the pair of electrodes are electrically connected by the outer connecting line. The illuminating diode structure of claim 1, wherein the illuminating diode units have (nxm) and are arranged in an array of (nxm) on the illuminating wafer by the electrical connection line. The m light-emitting diode units of the n rows and the rows are connected in series to form one light-emitting diode unit group, and become n light-emitting diode unit groups, and the n light-emitting diode unit groups are Parallel to each other, where n, m are natural numbers greater than 1, and n is equal to or not equal to m. The light-emitting diode structure according to claim 1, wherein The light-emitting diode units have (nxm) and are arranged in an array of (nxm) on the light-emitting chip, and the light-emitting diodes are used to make m light-emitting diodes in the n rows and the rows. The cells are connected in series to form a group of light emitting diodes, and become n light emitting diode unit groups, and the n light emitting diode unit groups are connected in series with each other, wherein n and m are natural numbers greater than 1. n is equal to or not equal to m. The light-emitting diode structure according to claim 1, wherein the electrical connection line is a Wheatstone bridge, and the light-emitting diode units are electrically connected to each other. The illuminating diode structure of claim 1, further comprising: an insulating unit disposed on the illuminating wafer, the insulating unit separating the illuminating diode units to enable the illuminating diodes The units are electrically insulated from each other. The light emitting diode structure of claim 1, wherein a part of the light emitting diode units are embedded in the electrical connection line of the conductive bracket. The illuminating diode structure of claim 1, wherein each of the illuminating diode units comprises: a first contact and a second contact, via the first contact and the second connection The points electrically connect the light emitting diode units to the electrical connection line. The light-emitting diode structure of claim 1, wherein the light-emitting diode structure is a flip-chip light-emitting diode structure, and the light-emitting chip and the conductive support each have an upper surface and a lower surface. The hair The photodiode unit is disposed on the lower surface of the illuminating wafer, and the electrical connection line is disposed on the upper surface of the conductive bracket. The light emitting diode structure of claim 1, further comprising: an external electronic device connected to the external electronic device via the pair of electrodes. The light-emitting diode structure of claim 1, further comprising: a conductive element disposed between the light-emitting diode units and the electrical connection line. A method for manufacturing a light emitting diode structure includes: providing a light emitting chip, wherein the light emitting chip is formed with a plurality of light emitting diode units; and providing a conductive bracket having an electrical connection line and electrically connected to At least one pair of electrodes of the electrical connection line; and the light-emitting diode and the conductive support, wherein the light-emitting diode units are opposite to the electrical connection line, and the light-emitting diode units are connected via the electrical connection line They are electrically connected to each other in series, in parallel or in series and parallel. The method for manufacturing a light emitting diode structure according to claim 12, wherein the electrical connection line comprises: an inner connecting line, corresponding to the light emitting diode units, by the inner connecting line The light emitting diode units are electrically connected to each other; and an outer connecting line is disposed on an outer side of the inner connecting line, and the inner connecting line and the pair of electrodes are electrically connected by the outer connecting line. The method for fabricating a light-emitting diode structure according to claim 12, wherein the light-emitting diode units have (nxm) arrays arranged on the light-emitting wafer in an (nxm) array. Electrically connecting lines, so that m light-emitting diode units in each of the n rows are connected in series to form a light-emitting diode unit group, and become n light-emitting diode unit groups, and the n light-emitting diodes The cell groups are connected in parallel with each other, wherein n, m are natural numbers greater than 1, and n is equal to or not equal to m. The method for fabricating a light-emitting diode structure according to claim 12, wherein the light-emitting diode units have (nxm) arrays arranged on the light-emitting wafer in an (nxm) array. Electrically connecting lines, so that m light-emitting diode units in each of the n rows are connected in series to form a light-emitting diode unit group, and become n light-emitting diode unit groups, and the n light-emitting diodes The cell groups are connected in series with each other, wherein n, m are natural numbers greater than 1, and n is equal to or not equal to m. The method for manufacturing a light-emitting diode structure according to claim 12, wherein the electrical connection line is a Wheatstone bridge, and the light-emitting diode units are electrically connected to each other. The method for manufacturing a light emitting diode structure according to claim 12, further comprising: providing an insulating unit disposed on the light emitting chip, the insulating unit separating the light emitting diode units to make the The light emitting diode units are electrically insulated from each other. The method for fabricating a light emitting diode structure according to claim 12, wherein a part of the light emitting diode units are embedded in the light emitting diode structure The electrical connection line of the conductive bracket. The method of fabricating a light emitting diode structure according to claim 12, wherein each of the light emitting diode units comprises: a first contact and a second contact, via the first contact The second contact electrically connects the light emitting diode units to the electrical connection line. The method for fabricating a light-emitting diode structure according to claim 12, wherein the light-emitting diode structure is a flip-chip light-emitting diode structure, and the light-emitting chip and the conductive support each have an upper surface and The light emitting diode unit is disposed on the lower surface of the light emitting chip, and the electrical connection line is disposed on the upper surface of the conductive bracket. The method for fabricating a light emitting diode structure according to claim 12, further comprising: providing an external electronic device, wherein the light emitting diode structure is connected to the external electronic device via the pair of electrodes. The method for manufacturing a light-emitting diode structure according to claim 12, further comprising: providing a conductive element disposed between the light-emitting diode units and the electrical connection line.