TW201203534A - An optoelectronic device - Google Patents

An optoelectronic device Download PDF

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TW201203534A
TW201203534A TW099134516A TW99134516A TW201203534A TW 201203534 A TW201203534 A TW 201203534A TW 099134516 A TW099134516 A TW 099134516A TW 99134516 A TW99134516 A TW 99134516A TW 201203534 A TW201203534 A TW 201203534A
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semiconductor
extension
electrode
unit
units
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TW099134516A
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TWI466284B (en
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Chien-Fu Shen
Chang-Huei Jing
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Epistar Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An optoelectronic device comprising: a substrate; a plurality of semiconductor units electrically connected with each other and disposed jointly on the substrate, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between thereof; a plurality of first electrodes disposed on each first semiconductor layer respectively; and a plurality of second electrodes disposed on each second semiconductor layer respectively, wherein at least one of the first electrodes comprises a first extension, and at least one of the second electrodes comprises a second extension, wherein at least one of the first extension and the second extension comprises a curve which is not parallel to the edge of the semiconductor units.

Description

201203534 六、發明說明： 【發明所屬之技術領域】 本發明係關於一發光元件陣列。 【先前技術】201203534 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to an array of light-emitting elements. [Prior Art]

日由於固態照，元件中的發光二極體具有低耗電 罝、低熱產生、操作哥命長、耐撞擊、體積小、反應 速度快、以及可發出穩定波長的色光等良好光電特 性，因，已廣泛應用於家電、儀表之指示燈、以及光 電產等。在光電技術發展中，固態照明元件著重於 其，光效率、操作壽命以及亮度，因而預期在不久的 將來能成為照明應用的主流。 夕以陣列型發光元件之形式被使用，其 用於尚驅動電壓之應用，且可減少led =;LED製造者針對陣列型發光元件設計不同： 降似：ΐ以滿足客戶對高驅動電壓LED的需求’以 降低成本進而提高生產效率。 【發明内容】 體單ΐ案光電元件，包含—基板；複數個半導 其之Γ複數個第-電極冗 極包含-第二第-延伸部’以及有-個第二電 體單元案電元件’包含-基板；複數個半導 疋歧電性連接位於此基板上；其中，每I: 201203534 半導體單元皆包含一第一半導體層，一第二半導體 層，以及一活性區介於其之間；複數個第一電極分別 =於，一半導體層之上；一連接部形成於此複數個半 ，體單元上以電性串接此複數個半導體單元；以及複 數個第二電極分別位於第二半導體層之上；其中，有 一個第一電極包含一第一延伸部，以及有一個第二電 含一第二延伸部，其中此複數個半導體單元之驅 動電壓大致相同。 。。—本案提出一光電元件，包含一基板；複數個半導體 J二彼t間電性連接且位於此基板上，其中各半導 3一第一半導體層、一第二半導體層、以及 本莫舻於其之間，複數個第一電極分別位於第一 和層亡丄以及複數個第二電極分別位於第二半導 體層上’其中複數個半導體單元包含—第—體 :電：ΐίίί體單元’以及一第三半導體單元，第 圍的第-半導個^含一第一電極塾位於基板最外 導體早兀上，以及第二電極中的至少一個 S 位ί基板最外圍的第二半導體單元 第- 電極及第二電極包含—第—延伸部及一 單元本彼案此提之V.光電元件，包含-基板::二導艘 於ί板r其中各半導趙 、舌㈣入2 t導體層、一第二半導體層、以及- /-雷之間，以及複數個第一電極及複數個第 二電^又別位於複數個半導體單元上，其中各 ilii導體單元，第-電極=含= 導f單元之第二半導體i:， 二半導體單元之第二半導體層上，立於第 卉r弟一電極及第 201203534 第二延伸部位於沒有電 二電極包含一第一延伸部及 極墊的第三半導體單元上。 【實施方式】Due to the solid-state illumination, the light-emitting diodes in the components have good photoelectric characteristics such as low power consumption, low heat generation, long life, impact resistance, small volume, fast reaction speed, and color light that can emit stable wavelengths. It has been widely used in home appliances, instrument indicators, and photovoltaic products. In the development of optoelectronic technology, solid-state lighting components focus on their light efficiency, operational life and brightness, and are expected to become the mainstream of lighting applications in the near future. It is used in the form of array-type light-emitting elements, which are used for the application of the driving voltage, and can reduce the LED =; LED manufacturers have different designs for the array-type light-emitting components: Falling like: ΐ to meet the customer's high-voltage LED Demand' to reduce costs and increase production efficiency. SUMMARY OF THE INVENTION A bulk single-photovoltaic device includes a substrate; a plurality of semiconductors having a plurality of first-electrode terminals including a second first-extension portion and a second electrical unit-like electrical component 'including-substrate; a plurality of semi-conducting 疋 electrically connected on the substrate; wherein, each I: 201203534 semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed therebetween The plurality of first electrodes are respectively over a semiconductor layer; a connecting portion is formed on the plurality of half portions, the body unit is electrically connected to the plurality of semiconductor units; and the plurality of second electrodes are respectively located at the second Above the semiconductor layer; wherein the first electrode comprises a first extension and the second electrode comprises a second extension, wherein the driving voltages of the plurality of semiconductor units are substantially the same. . . The present invention proposes a photovoltaic element comprising a substrate; a plurality of semiconductors J are electrically connected to each other and located on the substrate, wherein each of the semiconductors 3, a first semiconductor layer, a second semiconductor layer, and A plurality of first electrodes are respectively located on the first layer and a plurality of second electrodes are respectively located on the second semiconductor layer, wherein the plurality of semiconductor units comprise a first body: a body: an electric unit: a third semiconductor unit, wherein the first semi-conducting electrode comprises a first electrode 塾 located on the outermost conductor of the substrate, and at least one of the second electrodes, the second semiconductor unit at the outermost periphery of the substrate - The electrode and the second electrode comprise a first extension and a unit. The V. optoelectronic component of the present invention comprises: a substrate: a two-conductor vessel, wherein each of the semi-conductors, the tongue (four) and the second conductor layer a second semiconductor layer, and - / - between the ray, and a plurality of first electrodes and a plurality of second electrodes are located on the plurality of semiconductor units, wherein each ilii conductor unit, the first electrode = = = The second semiconductor of the f unit i:, The second semiconductor layer of the semiconductor unit, the second extending portions 201,203,534 and second stand of Hui r a brother no electrode is electrically second electrode comprises portions extending on a first and third electrode pads of the semiconductor unit. [Embodiment]

第1圖揭示一符合本案一實施例之光電元件1〇之 上視圖。光電元件1〇例如發光二極體（LED)、雷射二 極體（LD)、或太陽能電池，包含複數個半導 成於一基板。上，第一電極141，第二電 及連接部143形成於半導體單元上。於本實施例中， 件10係為-發光二極體（LED)。帛2圖揭示 Ϊ導ί ^光件1〇、沿A_A，線段之剖面圖。每一個 ΠΓΓΐ於第-、第二半導體層丄= :第一半導體層121的組成材料是一摻雜 ^ η-型雜質的m_V半導體材料，第二半導體層123 ^成材料是一摻雜p_型或n_型雜 =里且導體層121及第二半導體層12ΠΪ 異質結構_、咬者多番。早/質結構(SH)、雙 出部份的成於半導體單元中’且暴露 於半導f J21。複數個分割道111形成 上暴露出部份基板u。光電元件⑺ 雷搞141 r第、電極141及第二電極142，其中第一 且第-暴露出的第—半導體層121之上， 含-第二延伸i丄=部⑷1，第二電極142包 個半導體單元上的1第一卜’禝數半導體早兀中的一 1412,且另一個车電極M1包含一第一電極墊 第二電極墊l422t導體單元上的第二電極142包含一 201203534 為了滿足客戶對光電元件特定面積、 動電壓的需求’半導體單^以及電極的佈局也ς須特 ΓΛΓ卜之數量原則上是依公式η= (可-1)，（可）’或（；+1)加以設計，其中，η代表 體單兀的數量，V代表光電元件的驅動電壓 半導體單元的驅動電壓。在本實施例中，光電元^ 10的大小是85X85mil2，其驅動電壓為72v。 導體單元的驅動電壓實質上為3V，但半導體 驅動電壓會因製程控制以及磊晶層❸品質而有所g 化。一般來說，在光電元件的電性效率上， 元的驅動電壓越低越好。每一半導體單元的面積大致 上彼此相，:依照上述的公式，光電元件10包含24 個半導體單元，分別配置於行1〇5、1〇6、1〇7、ι〇8、 以及109。第一行1〇5包含五個半導體單元 153、154、以及155’朝一第一方向串接；第二 包含五個半導體單元16卜162、163、164、以及165, 朝一第二方向串接；第三行1〇7包含四個半導體單元 171、172、173、以及174 ’朝第一方向串接； 行108包含五個半導體單元181、182、183、184、 以及185，朝第二方向串接；第五行1〇9包含五個 導體單元19卜192、193、194、以及195，朝第一方 向串接。第一方向及第二方向相反，而不同行中 不同數量的半導體單元的佈局可使配置上 足客戶的需求。 匆兩 ，第三行107中，半導體單元的外形是長方形 八他行中的半導體單元形狀不同，藉由這樣的設 計以使電極佈局上更容易。參考第1圖及第3圖， 於第一行105及第五行109中，除了位於基板u 洛區域的半導體單元151、155、191、以及I%外， 其他半導體單元上的電極佈局是相似的。於第二行 201203534 L〇6及第四行108中，除接近基板11邊緣的半導體 二元161、165、181、以及185外，其他位於半導體 :元上的電極佈局是相同的。第三行107中的半導體 單元其電極佈局與其他行中的半導體單元相比差異 性，大，但其中之半導體單元172及173上的電極佈 局疋相同的，而與位於基板n邊緣的半導體單元 及174不同。 第一延伸部1411包含一第一曲線延伸部 411a;第二延伸部1421包含一第二曲線延伸部 _421a，在行105、1〇6、108、及109上的半導體單 疋的第二延伸部142丨更包含一直線延伸部1421b; 第一曲線延伸部14lia及/或第二曲線延伸部142’ 與半導體單元的任一邊都不互相平行。在第一、三、 及五行105、1〇7、及109的半導體單元上的第一 伸部1411位於溝槽17〇中，並且從半導 -邊向對側的第二邊延伸，第二延伸部14二= 半導體單元的第二邊向第一邊延伸。在第二和四 106及108的半導體單元上的第一延伸部1411 半導體單元的第二邊向第一邊延伸，且第二延 • 1421是從半導體單元的第一邊向第二邊延伸。於本 實施例中，第二延伸部1421大致上係靠近半導體 元的邊緣設置，而第一延伸部1411係置於 元溝槽170中，與第一半導體層121電性連接。延 部的數量可依半導體單元的面積做調整，若半導體單 元的面積較大，就需要較多的延伸部。延伸部亦可形 成自第一曲線延伸部1411a延伸出的一二階延伸^ 1411c及/或自第二曲線延伸部1421a延伸出的一二; 延伸部1421c ’以增加電流分散。 一 第一電極墊1412及第二電極墊1422係分別位 於基板11的相對角落的半導體單元155及191上， 201203534 第一電極塾1412與半導體單it 155上的第-延伸部 二相接，’第二電極塾1422與半導體單元ΐ9ι上 的第延二部1421相接觸；電極墊係作為Fig. 1 is a top plan view showing a photovoltaic element 1A in accordance with an embodiment of the present invention. The photovoltaic element 1 is, for example, a light emitting diode (LED), a laser diode (LD), or a solar cell, and includes a plurality of semiconductors on a substrate. The first electrode 141, the second electric and connection portion 143 are formed on the semiconductor unit. In this embodiment, the device 10 is a light emitting diode (LED). The 帛2 diagram reveals a cross-sectional view of the line segment along the line A_A. Each of the first and second semiconductor layers 丄 = : the constituent material of the first semiconductor layer 121 is an m_V semiconductor material doped with η-type impurities, and the second semiconductor layer 123 is made of a doping p_ The type or the n_ type impurity = the conductor layer 121 and the second semiconductor layer 12 ΠΪ the heterostructure _, the bite is many times. The early/mass structure (SH), the double-excess portion is formed in the semiconductor unit' and exposed to the semiconductor derivative f J21. A plurality of divided tracks 111 are formed to expose a portion of the substrate u. The photoelectric element (7) is 141 r, the electrode 141 and the second electrode 142, wherein the first and the first exposed first semiconductor layer 121 comprises a second extension i 丄 = portion (4) 1, and the second electrode 142 One of the first semiconductor electrodes on the semiconductor unit 1412, and the other vehicle electrode M1 includes a first electrode pad second electrode pad 142t. The second electrode 142 on the conductor unit contains a 201203534. The customer's demand for the specific area and dynamic voltage of the photoelectric element 'the semiconductor single ^ and the layout of the electrode are also not required to be in accordance with the formula η = (may -1), (can) ' or (; +1) Designed in which η represents the number of body units, and V represents the driving voltage of the driving voltage semiconductor unit of the photovoltaic element. In this embodiment, the size of the photocell 10 is 85×85 mil 2 and its driving voltage is 72 volts. The driving voltage of the conductor unit is substantially 3V, but the semiconductor driving voltage is g-treated due to process control and epitaxial layer quality. In general, in terms of the electrical efficiency of the photovoltaic element, the lower the driving voltage of the element, the better. The area of each of the semiconductor units is substantially opposite to each other. According to the above formula, the photovoltaic element 10 includes 24 semiconductor units, which are disposed in rows 1〇5, 1〇6, 1〇7, ι8, and 109, respectively. The first row 1〇5 includes five semiconductor units 153, 154, and 155' connected in series in a first direction; the second includes five semiconductor units 16 162, 163, 164, and 165 connected in series in a second direction; The third row 1〇7 includes four semiconductor units 171, 172, 173, and 174' connected in series in the first direction; the row 108 includes five semiconductor units 181, 182, 183, 184, and 185, which are oriented in the second direction. The fifth row 1〇9 includes five conductor units 19, 192, 193, 194, and 195, which are connected in series in the first direction. The first direction and the second direction are opposite, and the layout of different numbers of semiconductor units without the peers can be configured to meet the needs of the customer. In the second row 107, the shape of the semiconductor unit is rectangular. The shape of the semiconductor unit in the other row is different, and the design is made to make the electrode layout easier. Referring to FIGS. 1 and 3, in the first row 105 and the fifth row 109, the electrode layouts on the other semiconductor units are similar except for the semiconductor units 151, 155, 191, and I% located in the substrate u Luo region. . In the second row 201203534 L〇6 and the fourth row 108, except for the semiconductor binary 161, 165, 181, and 185 near the edge of the substrate 11, the other electrode layouts on the semiconductor: element are the same. The semiconductor cells in the third row 107 have different electrode layouts than the semiconductor cells in the other rows, but the electrode layouts on the semiconductor cells 172 and 173 are the same, and the semiconductor cells located at the edge of the substrate n. And 174 is different. The first extension portion 1411 includes a first curved extension portion 411a; the second extension portion 1421 includes a second curved extension portion 421a, and a second extension of the semiconductor unit on the rows 105, 1〇6, 108, and 109. The portion 142丨 further includes a straight line extending portion 1421b; the first curved extending portion 14lia and/or the second curved extending portion 142' are not parallel to either side of the semiconductor unit. The first extension 1411 on the semiconductor units of the first, third, and fifth rows 105, 1〇7, and 109 is located in the trench 17〇 and extends from the semi-conductive side to the opposite second side, second The extension 14 14 = the second side of the semiconductor unit extends toward the first side. The first extension 1411 of the semiconductor unit on the semiconductor elements of the second and fourth portions 106 and 108 extends toward the first side, and the second extension 1421 extends from the first side to the second side of the semiconductor unit. In the present embodiment, the second extension portion 1421 is disposed substantially adjacent to the edge of the semiconductor element, and the first extension portion 1411 is disposed in the element trench 170 to be electrically connected to the first semiconductor layer 121. The number of extensions can be adjusted according to the area of the semiconductor unit. If the area of the semiconductor unit is large, more extensions are required. The extension portion may also form a second-order extension 1411c extending from the first curved extension portion 1411a and/or a second extension extending from the second curved extension portion 1421a; the extension portion 1421c' to increase current dispersion. A first electrode pad 1412 and a second electrode pad 1422 are respectively located on the semiconductor units 155 and 191 at opposite corners of the substrate 11, and the 201203534 first electrode 塾 1412 is connected to the first extension 2 on the semiconductor unit 155, ' The second electrode 塾1422 is in contact with the second extension 1421 on the semiconductor unit ;9ι; the electrode pad is used as

Chip ^ b^g) 配詈;美狀: ^的困難度’電極墊較佳地被分別 配置在基板11最外側上的不_半導體單元上。 為了要電連接各個半導體單元，一連接部143 f此f成於各個半導體單元間，舉例來說，連接部 的43第二體單元上的第-延伸部1411及相鄰 連接部143於第一、三、及五行二：7本 $ 109之間形成一第一方向的串接，而於第二及四行 *及108之間形成一第二方向的反向串接。各 間藉由連接部143串接半導體單元151及161、165 及174、171及18卜以及185及195。於第一二、 二^行105、106、1〇8、及1〇9中每兩個半導體 二，間有兩個連接部143存在於其間，於第三行1〇7 母兩個半導體單元間有一個連接部143存在於JL ^圖第4圖是第1圖中所示之光電元件1G的等效ί 142夕光上元V〇之第二半導體層123及第二電極 气透明導電層，透明導電層的材料 πτοί屬乳化材料’例如氧化姻錫（IT0)、氧化鎘錫 二)、乳化錄錫、氧化銦鋅、氧化辞銘、或氧化鋅 外，當一金屬層具有能讓光透過的厚度時，也 可作為透明導電層。 ❿ 於基板11及第一半導體層121之間，更可包 一接合層，使得半導體單元與基板n接合。接合層 透明接合層或是導電透明接合層；若；i 緣透明接合層，其材料可以是聚醯亞胺(pQlyimide)、 201203534 ί艾ΐ丁烯(BCB)、或過氟環丁烷(PFCB);若為導雷 ，其材料可以是金屬氧 =、氧化銻錫銦氧錫/ 道⑴形成=導以之分割 5=絕緣透明接合；。\之:合二;= 各丰111穿過導電接合層暴露出基板"使i (鹰)絕緣，此時基板丨1為氮化紹 :之ί視5:。揭a-第符5合6本二 :ί 形成於一基板211，且經由複數個： ?開來’第一電極241、第二電極242、 121第一+導體層123，以及介於第一、第二本 gimn22。複數個分割道211形成於各 241及d間。光電元件2〇上有複數個第-電極 露出Zlii42,其中第一電極241係形成於暴 :第二半導體層⑵上。第一電極24m m/二電極242包含一第二延伸部2421。 雷梅’^1數^f體單元巾的—個半導體單元上的第一 二 匕含一第一電極塾2412，且另一半導f星 兀上的第二^電極242包含一第二電極墊2422。 f本實施例中，光電元件20的大小是85χ 驅動電壓為嚮，每一半導體單元的面積 foUlf乂同，依照上述的公式(l_”，光電元件 匕3 23個半導體單元，分別配置於行205、206、 201203534 中。第一行205包含五個半導體單 52、253 ' 254、及255朝一第一方向串接， ^其上的電極佈局與光電元件10第一行105中的半 ί體單元上的電極佈局相同；第二行206包含四個半 導，単兀261、262、263、及264朝一第二方向串接+ 且八亡的電極佈局與光電元件1〇第三行1〇7中的半 導體f"70上的電極佈局相同；第三行207包含五個丰 =皁兀271、272、273、274、及275朝第一方向 串接，且其上的電極佈局與光電元件1〇第一 中的，導體單元上的電極佈局相同；第四行2〇8包含 =個半導體單元281、282、283、及284朝第二方向 串接’且其上的電極佈局與光電元件1〇第三行1〇7 中的半導體單元上的電極佈局相同；第五行2〇9包 五個半導體單元291、292、293、294、及295朝第 一=向串接，且其上的電極的佈局與光t元件1〇第 一行105中的半導體單元上的電極佈局相同。 θ 於第二及四行206、208中，半導體單元的外形 是長方形且與其他行中的半導體單元形狀不同。參 第5圖及第6圖，第一行205、第三行207、以及第 五行209的半導體單元上的電極佈局，除了半導體單 兀251、255、27卜275、291、及295上的電極外， 其他半導體單元上的電極佈局彼此之間大致上相 似；第二行206及第四行208的半導體單元上的電極 佈局’除了半導體單元261、264、281 '及284上的 電極外，其他半導體單元上的電極佈局彼此之間大致 上相同。第一延伸部2411包含一第一曲線延伸部 2411a，且第二延伸部2421包含一第二曲線延伸部 2421a。在行205、207、及209的半導體單元上，第 二延伸部2421更包含一直線延伸部2421b;第一曲 線延伸部2411a與第二曲線延伸部2421a不平行於半 201203534Chip ^ b^g) 詈 美; beauty: ^ difficulty degree 'electrode pads are preferably disposed on the non-semiconductor unit on the outermost side of the substrate 11, respectively. In order to electrically connect the respective semiconductor units, a connection portion 143 f is formed between the respective semiconductor units. For example, the first extension portion 1411 and the adjacent connection portion 143 on the second body unit of the connection portion 43 are first. 3, and 5 rows 2: 7 in series form a first direction of series connection, and a second direction of reverse series connection between the second and fourth lines * and 108. The semiconductor units 151 and 161, 165 and 174, 171 and 18, and 185 and 195 are connected in series by the connecting portion 143. In the first two, two rows 105, 106, 1 〇 8, and 1 〇 9 each of the two semiconductors, there are two connecting portions 143 in between, in the third row 1 〇 7 mother two semiconductor units There is a connection portion 143 existing between the JL and FIG. 4, which is the second semiconductor layer 123 and the second electrode transparent conductive layer of the photovoltaic element 1G shown in FIG. The transparent conductive layer material πτοί is an emulsified material such as oxidized sulphur tin (IT0), cadmium tin oxide bis, emulsified tin, indium zinc oxide, oxidized sulphur, or zinc oxide, when a metal layer has light When it passes through the thickness, it can also be used as a transparent conductive layer. Between the substrate 11 and the first semiconductor layer 121, a bonding layer may be further included to bond the semiconductor unit to the substrate n. a bonding layer transparent bonding layer or a conductive transparent bonding layer; if; i edge transparent bonding layer, the material may be polyimine (pQlyimide), 201203534 ΐ ΐ butylene (BCB), or perfluorocyclobutane (PFCB) In the case of a mine, the material may be metal oxygen =, bismuth tin oxide indium tin oxide / channel (1) formed = guided by 5 = insulated transparent joint; \之:合二;= Each Feng 111 through the conductive bonding layer exposes the substrate " makes i (eagle) insulated, at this time the substrate 丨1 is nitrided: 视视5:. The a-fifth 5 in 6 second: ί is formed on a substrate 211, and through a plurality of: 'opening' the first electrode 241, the second electrode 242, 121 the first + conductor layer 123, and between the first The second gimn22. A plurality of divided tracks 211 are formed between the respective 241 and d. The plurality of first electrodes are exposed on the photovoltaic element 2, and the first electrode 241 is formed on the second semiconductor layer (2). The first electrode 24m / the second electrode 242 includes a second extension 2421. The first diode on the semiconductor unit of the Rem's unit has a first electrode 塾 2412, and the second electrode 242 on the other half of the f 包含 includes a second electrode pad. 2422. f In this embodiment, the size of the photovoltaic element 20 is 85 χ, the driving voltage is the direction, and the area of each semiconductor unit foUlf is the same. According to the above formula (1_), the photovoltaic element 匕3 23 semiconductor units are respectively arranged in row 205. , 206, 201203534. The first row 205 includes five semiconductor sheets 52, 253 '254, and 255 connected in series in a first direction, and the electrode layout thereon and the half-cell unit in the first row 105 of the photovoltaic element 10. The upper electrode layout is the same; the second row 206 contains four semi-conductors, 単兀261, 262, 263, and 264 are connected in series in a second direction + and the electrode layout of the eight dead and the optoelectronic component 1 〇 the third row 1 〇 7 The electrode layout on the semiconductor f"70 is the same; the third row 207 includes five abundances saponins 271, 272, 273, 274, and 275 connected in series in the first direction, and the electrode layout and the photovoltaic element 1 thereon In the first one, the electrode arrangement on the conductor unit is the same; the fourth row 2〇8 includes=the semiconductor units 281, 282, 283, and 284 are connected in series in the second direction' and the electrode layout and the photovoltaic element 1 thereon电极The electrode layout on the semiconductor unit in the third row 1〇7 is the same The fifth row 2〇9 packs five semiconductor units 291, 292, 293, 294, and 295 in series with the first = direction, and the layout of the electrodes thereon and the semiconductor unit in the first row 105 of the light t element 1 The upper electrode layout is the same. θ In the second and fourth rows 206, 208, the outer shape of the semiconductor unit is rectangular and different from the shape of the semiconductor unit in other rows. Referring to Figures 5 and 6, the first row 205, The electrode layout on the semiconductor cells of the three rows 207 and the fifth row 209, except for the electrodes on the semiconductor cells 251, 255, 27, 275, 291, and 295, the electrode layouts on the other semiconductor cells are substantially similar to each other The electrode layout on the semiconductor cells of the second row 206 and the fourth row 208 'except for the electrodes on the semiconductor cells 261, 264, 281' and 284, the electrode layouts on the other semiconductor cells are substantially identical to each other. The extension portion 2411 includes a first curved extension portion 2411a, and the second extension portion 2421 includes a second curved extension portion 2421a. On the semiconductor units of the rows 205, 207, and 209, the second extension portion 2421 further includes a linear extension portion. 242 1b; the first curved line extension 2411a and the second curved curved portion 2421a are not parallel to the half 201203534

Hi的任一邊。第-、三、及五行205、207、 主遑ί導體單元上的第一延伸部2411係設置於第一 層121上，且自半導體單元的第一邊向相對於 =逯的第二邊延伸，第二延伸部2421則是從 ΐ向第一邊延伸。於第二、及四行206、208半導體 上Ϊ第一延伸部2411係自半導體單元的第二邊 二邊邊延伸，第二延伸部2421則是自第一邊向第 :土延^ :於本實施例中，第二延伸部2421大致上 二罪近半導體單元的邊緣設置，而第一延伸部2411 於半導體單元中，與第一半導體層電性連接。延 申邛亦可形成自第一曲線延伸部2411a延伸出的一二 产白延伸部2411c，以增加電流分散。 一 第一電極墊2412及第二電極墊2422係分別形 半Ϊ體單元255及291上，第一電極墊2412與 體單元255上的第一延伸部2411相接觸，第二 電極墊2422與半導體單元291上的第二延伸部24^ ，，觸。電極墊係作為接合（bonding)用，且分別配置 在基板21角落區域上的不同的半導體單元上。 _ 於本實施例中，連接部243於第一、三、及五 仃205、207、及209之間形成一第一方向的串接， ^於第二及四行2〇6及208之間形成一第二方向的反 向串接。各行之間藉由連接部243串接半導 ⑸及加、264及275、271及281、以及二導及體： =第二、三、及五行205、207、及2〇9中每兩個半 ，體單元間有兩個連接部243，於第二行2〇6及第四 行208中母兩個半導體單元間有一個連接部243。第 7圖气第5圖中所示之光電元件2〇的等效電路圖。 弟8圖揭示一符合本案第三實施例之光電元件 之上視圖。參考第8-9圖，光電元件3〇包含複數 個半導體單元形成於一基板31上，第一電極341、 201203534 第二電極342、以及連接部343形成於半導體 士道半導體單元的結構包含第一半導體、 以及介於第-、第二半導體層之t 活=區122。複數個分割道311形成於各半導體 電/Λ30 ί有複數個第一電極341及第二 電，342’其中第一電極341包含一第一延伸部則 ，成於半導體單元355之外的半 ，包含-第二延伸部3421。此以 355上，第一電極341包含一第一電極整： 3=,兀391上的第二電極342包含一第二電極墊 sn 實施例中，光電元件30的大小是50χAny side of Hi. The first, second, and fifth rows 205, 207, the first extension 2411 on the main conductor unit are disposed on the first layer 121, and extend from the first side of the semiconductor unit to the second side opposite to the 逯The second extension portion 2421 extends from the crucible to the first side. In the second and fourth rows 206, 208, the first extension portion 2411 extends from the second side of the semiconductor unit, and the second extension portion 2421 extends from the first side to the first side: In this embodiment, the second extension portion 2421 is substantially disposed adjacent to the edge of the semiconductor unit, and the first extension portion 2411 is electrically connected to the first semiconductor layer in the semiconductor unit. The extension may also form a second white extension 2411c extending from the first curved extension 2411a to increase current dispersion. A first electrode pad 2412 and a second electrode pad 2422 are respectively formed on the semiconductor unit 255 and 291. The first electrode pad 2412 is in contact with the first extension 2411 on the body unit 255, and the second electrode pad 2422 and the semiconductor The second extension 24^ on the unit 291 is touched. The electrode pads are used for bonding and are disposed on different semiconductor units on the corner regions of the substrate 21, respectively. In the present embodiment, the connecting portion 243 forms a series connection in the first direction between the first, third, and fifth turns 205, 207, and 209, and between the second and fourth rows 2, 6 and 208. A reverse series connection in a second direction is formed. Each of the rows is connected in series by a connecting portion 243 with a semiconducting (5) and adding, 264 and 275, 271 and 281, and a two-conducting body: = two, two, three, and five rows of each of 205, 207, and 2〇9 In the second half, there are two connecting portions 243 between the body units, and in the second row 2〇6 and the fourth row 208, there is a connecting portion 243 between the two semiconductor units. The equivalent circuit diagram of the photovoltaic element 2A shown in Fig. 5 is shown in Fig. 5. Figure 8 shows a top view of a photovoltaic element in accordance with a third embodiment of the present invention. Referring to FIGS. 8-9, the photovoltaic element 3A includes a plurality of semiconductor units formed on a substrate 31, and the first electrode 341, the 201203534 second electrode 342, and the connection portion 343 are formed in the semiconductor track semiconductor unit including the first semiconductor. And between the first and second semiconductor layers t live = region 122. A plurality of dividing channels 311 are formed on each of the semiconductor electrodes 有 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 A second extension 3421 is included. In 355, the first electrode 341 includes a first electrode: 3=, and the second electrode 342 on the 兀391 includes a second electrode pad sn. In the embodiment, the size of the photovoltaic element 30 is 50 χ.

Si 3V巧電屢為，’半導體單元的驅動電壓 光i元件導體單元的面積大致上彼此相同。 m3G\、3G8、及第—行奶包含五了 22早 51、352、353、354、及 355 朝一第 接第二行3〇6包含四個半導體單元361、 I五個+以一第二方向串接；第三行撕包 +導體早兀37卜372、373、374、及375朝 38卜3 U，第四行3〇8包含四個半導體單元 包含五個半導體ίΓ』第3二92方向串接；第五行3〇9 朝第一方早几 391、392、393、394、及395 斑直二第^?^于3〇6、3〇8中’半導體單元的外形 9、圖、，第丁一行^體笛單元形狀不同。參考第8圖及第 丰導齅罝-Λ 第三行307、以及第五行309的 MS、lit ^上的電極佈局，除了半導體單元351、 m* iL卜66 391、及395上的電極外，其他半導 電極佈局彼此之間大致上相似；第二行 12 201203534 306及第四行308的半導體單元上的電極佈局，除了 半導體單元361、364、381、及384上的電極外，其 他的彼此之間大致上相同。第一延伸部3411可以是 一曲線延伸部341 la，其係設置於接近基板31外圍的 半導體單元361、375、381、391、及394上；第一 延伸部3411也可以是一直線延伸部3411b，係設置 於其他半導體單元上。第二延伸部3421可為一曲線 延伸部。 v 於第一、 - —及立仃獨、册，増，隊了平導The Si 3V is repeatedly used, and the driving voltage of the semiconductor unit is substantially the same as the area of the element unit. m3G\, 3G8, and the first line of milk contain five 22 early 51, 352, 353, 354, and 355. The first row and the second row 3〇6 contain four semiconductor units 361, I five + in a second direction Tandem; third row tearing + conductor early 37 372, 373, 374, and 375 toward 38 Bu 3 U, fourth row 3 〇 8 containing four semiconductor units containing five semiconductors 第 第 3 2 92 direction Concatenation; the fifth line 3〇9 is 391, 392, 393, 394, and 395 as far as the first side is 直 二 第 ^^^^^^^^^^^^^^^^^^^^ Ding and one line ^ body flute unit shape is different. Referring to FIG. 8 and the first electrode row 307, and the electrode layout on the MS, lit ^ of the fifth row 309, except for the electrodes on the semiconductor unit 351, m*iLb 66 391, and 395, The other semi-conductive electrode layouts are substantially similar to each other; the electrode layout on the semiconductor cells of the second row 12 201203534 306 and the fourth row 308, except for the electrodes on the semiconductor cells 361, 364, 381, and 384, other ones The difference is roughly the same. The first extending portion 3411 may be a curved extending portion 341 la disposed on the semiconductor units 361, 375, 381, 391, and 394 near the periphery of the substrate 31; the first extending portion 3411 may also be a straight extending portion 3411b, It is set on other semiconductor units. The second extension portion 3421 can be a curved extension. v In the first, - and Li Zhi, book, 増, the team led

體單元375、395外，其他的半導體單元其上的第一 延伸部3411係自半導體單元的第一邊向&對於第一 邊的第二邊延伸，第二延伸部3421則係自第二邊向 第一邊延伸。半導體單元375及395上的第一延 3411係自半導體單元的第三邊向第二邊延伸。於第 二及四行306、308，除了半導體單元36卜381外， 導體單元上的第一延伸部3411係自第二邊向 =一邊延伸，且第二延伸部342丨係自第一 邊延伸。於半導體單元361及381上的第ί ^ =係自半導體單元361及381的第三J 忽 =伸。第-延伸部3411的曲線延伸二 3421 ^ ^ ^ ^ 0 致上係靠近半導體單元的邊緣設 车3411係置於半導體單元中，盥第 及直線延伸部34m延伸 ： 341!c，以增加電流分散。 一 P自延伸邰 第一電極墊3412及第二電極熱^ 成於半導體單元355及391上/塾H係分別形 饮σ用且分別配置在基 13 201203534 板31角落區域上的不同的半導體單元上。 行3。=施:中^ =於第二及四行3〇6及3。;^形以：反 3°51 串;f。各行之間藉由連接部343串接半導^單元 間。第ίο圖f有一個連接部343存在於其 路圖第®疋第圖中所示之光電元件30的等效電 40之卜i目Jf揭&示符合本案第四實施例之光電元件 數個半導體單元形成於—^ '電，=°包含複 m 442、以及連接；443 二元 Ϊ導元的結，含第-半導體層121 Ϊ: 活性d ^22㉟义於第一、第二半導體層之間的 f ^ 442 ^上有複數個第一電極441及第二 之外的半導體單元上m 442m二以外的半導體單元上的第二電極 元455 一ϋ部4421。此外，形成於半導體單 電極441包含—第一電極墊44i2， 極塾4422。早疋Μ上的第二電極442包含—第二電 的或& r 馮8v丰導體早兀的驅動電壓 iii 上上述公式’ *電元件40包含16個半 =體早兀，配置於行405、406、及4 405 ^ 45, - 452 , 453+ 4f4 ,； 方向串接’第一行406包含六個半導體 201203534 JJ461、462、463、464、465、及 4 向串接；第三行4 〇 7包含五個半導體單元4 7工第&方 473、474、及475朝第一方向串接。 …第二402中的半導體單元的外形與其他 半導體單元形狀不同；參考第u圖及第12圖一 行405以及第三行407的半導體單元上 除了位於半導體單元451、455、471、及4€7^In addition to the body units 375, 395, the first extension portion 3411 on the other semiconductor unit extends from the first side of the semiconductor unit to the second side of the first side, and the second extension portion 3421 is from the second side. The side extends to the first side. The first extension 3411 on the semiconductor cells 375 and 395 extends from the third side of the semiconductor unit to the second side. In the second and fourth rows 306, 308, in addition to the semiconductor unit 36 381, the first extension 3411 on the conductor unit extends from the second side = the side, and the second extension 342 extends from the first side . The ί ^ = on the semiconductor units 361 and 381 are derived from the third J of the semiconductor units 361 and 381. The curved extension of the first extension portion 3411 is two 3421 ^ ^ ^ ^ 0 so that the edge of the upper semiconductor unit 3411 is placed in the semiconductor unit, and the first and the linear extension 34m are extended: 341!c to increase current dispersion. . A P self-extensioning first electrode pad 3412 and a second electrode are thermally formed on the semiconductor units 355 and 391/塾H are respectively used for different semiconductor units arranged on the corner regions of the base 13 201203534 on. Line 3. = Shi: 中^ = on the second and fourth lines 3〇6 and 3. ;^ shape to: reverse 3 ° 51 string; f. The rows are connected in series by the connection portion 343 between the semiconductor units. Figure f has a connection portion 343 present in the circuit diagram of the photoelectric element 30 shown in the circuit diagram of the equivalent of the electrical component 40, and the number of photovoltaic elements according to the fourth embodiment of the present invention The semiconductor unit is formed in a ^^ electric, =° comprising a complex m 442, and a connection; a junction of the 443 binary germanium derivative, comprising a first semiconductor layer 121: an active d^2235 is defined by the first and second semiconductor layers There is a plurality of first electrode 441 and a second electrode element 455 on the semiconductor unit other than m 442m on the semiconductor unit other than the first semiconductor electrode 441 and the second portion 4421. Further, the semiconductor single electrode 441 includes a first electrode pad 44i2 and a pole 4422. The second electrode 442 on the early turn includes a second electric or & r von 8v abundance conductor early 兀 drive voltage iii on the above formula ' * electrical component 40 contains 16 half = body early 兀, configured in row 405 406, and 4 405 ^ 45, - 452 , 453 + 4f4 ,; directional stringing 'the first row 406 contains six semiconductors 201203534 JJ461, 462, 463, 464, 465, and 4-direction tandem; third row 4 The crucible 7 includes five semiconductor units 4 & sides 473, 474, and 475 connected in series in the first direction. The outer shape of the semiconductor unit in the second 402 is different from the shape of the other semiconductor unit; the semiconductor unit with reference to the u and 12th rows 405 and the third row 407 is located on the semiconductor unit 451, 455, 471, and 4€7 ^

極外，其他半導體單元的電極佈局彼此之間大致上相 似。第一延伸部4411包含一直線延伸部44Ua以及 一二階延伸部4411c，其中所有的第二延伸部4421 都是曲線的延伸部。於第一及二行4〇5、4〇7的半導 體單元上的第一延伸部4411係自半導體單元的坌一 邊向相鄰於第一邊的第三邊及第四邊延伸，而第二延 伸部4421係自第二邊向第三邊及第四邊延伸。於第 二行406的半導體單元上的第一延伸部4411係自半 導體單元的第二邊向第三邊及第四邊延伸，而第二延 伸部4421係自第一邊向第三邊及第四邊延伸。曲線 延伸部4411及4421不平行於半導體單元的任一邊。 第一電極墊4412及第二電極墊4422係分別位 於半導體單元455及471上，連接部443於半導體單 元之間形成一串接。第13圖是第11圖中所示之光電 元件40的等效電路圖。 第14圖揭示一符合本案第五實施例之光電元件 50之上視圖。第15圖係光電元件5〇的3D立體圖。 光電元件50的大小是40x40mil2，其驅動電壓為 36V，半導體單元的驅動電壓約為3V ;依照公式 (女-1) ’於本實施例中’光電元件50包含11個半導 體單元，分別配置於行505、506、及507中。第一 行505包含四個半導體單元551、552、553、及554 朝一第一方向串接；第二行506包含三個半導體單元 15 201203534 561、562、及563朝一第二方向串接；第三行5〇7 含四個半導體單元571、572、573、及574朝第一方 向串接。具有第一延伸部5411的第一電極541係彤 成於半導體單元554之外的半導體單元上，具有第^ 延伸部5421的第二電極542係形成於所有^ ^ 單元上。半導體單元554上的第一電極541包含一 一電極墊5412,且半導體單元571上的第二電極542 包含一第二電極墊5422。連接部543於半導體單元 • 之間形成一串接。第16圖是第14圖中所·示朵雷 件50的等效電路圖。 I尤冤疋 第17圖揭示一符合本案第六實施例之光電元件 6〇之上視圖。第18圖係光電元件6〇的3〇立體圖。 光電元，60的大小是12〇xl2〇mil2,其驅動電壓為 ，半導體單兀的驅動電壓約為3v ;依照公式 (vf )，於本實施例中，光電元件6〇 單元，分別配置於行605、606、及‘ 6〇5包含二個半導體單元651及652朝一第一方向串 接，第二行606包含四個半導體單元661、662、663、 π了第二方向串接；第三行607包含二個半導 ，早兀671及672朝第一方向串接。第一電極641包 I二第延伸部6411 ’第二電極642包含一第二延 . 642卜此外，複數半導體單元中的-個半導體 二^上的其第一電極641包含二個第一電極墊 笛一發且另一半導體單元上的第二電極642包含二個 ^，墊6422。連接部643於半導體單元之間形 第19圖是第17圖中所示之光電元件60 的等效電路圖。 70夕？ 2〇igf t示一符合本案第七實施例之光電元件 弁雷-H。第21圖係光電元件70的3D立體圖。 70 的大小是12〇xl20miI2，其驅動電壓為 201203534 2^V ’半導體單元的驅動電壓約為3v ;依照公式 (奇^1)，於本實施例中，光電元件70包含7 ^固半導 體單元，分別配置於行705、706、及707中。第一 行705包含二個半導體單元751及752朝一第一方向 串接；第二行606包含三個半導體單元761、762、 及朝一第一方向串接；第三行707包含二個半導 體單το 771及772朝第一方向串接。第一電極741包 含一第一延伸部7411，第二電極742包含一第二延 ^部7421。此外，複數半導體單元中的一個半導體In addition, the electrode layouts of other semiconductor units are substantially similar to each other. The first extension 4411 includes a linear extension 44Ua and a second extension 4411c, wherein all of the second extensions 4421 are curved extensions. The first extending portion 4411 on the semiconductor unit of the first and second rows 4〇5, 4〇7 extends from the side of the semiconductor unit to the third side and the fourth side adjacent to the first side, and the second The extension portion 4421 extends from the second side to the third side and the fourth side. The first extending portion 4411 on the semiconductor unit of the second row 406 extends from the second side of the semiconductor unit to the third side and the fourth side, and the second extending portion 4421 is from the first side to the third side and Extending on four sides. The curve extensions 4411 and 4421 are not parallel to either side of the semiconductor unit. The first electrode pad 4412 and the second electrode pad 4422 are respectively located on the semiconductor units 455 and 471, and the connection portion 443 forms a series connection between the semiconductor units. Fig. 13 is an equivalent circuit diagram of the photovoltaic element 40 shown in Fig. 11. Fig. 14 shows a top view of a photovoltaic element 50 in accordance with a fifth embodiment of the present invention. Fig. 15 is a 3D perspective view of the photovoltaic element 5A. The size of the photo-electric element 50 is 40×40 mil 2 , the driving voltage is 36 V, and the driving voltage of the semiconductor unit is about 3 V. According to the formula (female-1) 'in the present embodiment, the photo-electric element 50 includes 11 semiconductor units, which are respectively disposed in the row. 505, 506, and 507. The first row 505 includes four semiconductor units 551, 552, 553, and 554 connected in series in a first direction; the second row 506 includes three semiconductor units 15 201203534 561, 562, and 563 connected in series in a second direction; Row 5〇7 includes four semiconductor units 571, 572, 573, and 574 connected in series in the first direction. The first electrode 541 having the first extension portion 5411 is formed on the semiconductor unit other than the semiconductor unit 554, and the second electrode 542 having the second extension portion 5421 is formed on all of the cells. The first electrode 541 on the semiconductor unit 554 includes an electrode pad 5412, and the second electrode 542 on the semiconductor unit 571 includes a second electrode pad 5422. The connecting portion 543 forms a series connection between the semiconductor units. Fig. 16 is an equivalent circuit diagram of the lightning element 50 shown in Fig. 14. I, Fig. 17, shows a top view of a photovoltaic element 6〇 in accordance with a sixth embodiment of the present invention. Figure 18 is a three-dimensional perspective view of the photovoltaic element 6〇. The size of the photocell, 60 is 12〇xl2〇mil2, and the driving voltage is that the driving voltage of the semiconductor unit is about 3v; according to the formula (vf), in the embodiment, the photocell 6〇 units are respectively arranged in the row. 605, 606, and '6〇5 include two semiconductor units 651 and 652 connected in series in a first direction, and a second row 606 includes four semiconductor units 661, 662, 663, π in a second direction; 607 contains two semi-conductors, which are connected in series in the first direction. The first electrode 641 includes a second extension portion 6411. The second electrode 642 includes a second extension. 642. Further, the first electrode 641 of the semiconductor diodes of the plurality of semiconductor units includes two first electrode pads. The second electrode 642 on the other semiconductor unit includes two pads, 6422. The connection portion 643 is formed between the semiconductor units. Fig. 19 is an equivalent circuit diagram of the photovoltaic element 60 shown in Fig. 17. 70 eve? 2〇igf t shows a photoelectric element 弁雷-H according to the seventh embodiment of the present invention. Fig. 21 is a 3D perspective view of the photovoltaic element 70. The size of 70 is 12〇xl20miI2, and its driving voltage is 201203534 2^V 'the driving voltage of the semiconductor unit is about 3v; according to the formula (odd ^1), in the embodiment, the photovoltaic element 70 includes a 7-solid semiconductor unit, They are respectively arranged in rows 705, 706, and 707. The first row 705 includes two semiconductor units 751 and 752 connected in series in a first direction; the second row 606 includes three semiconductor units 761, 762, and is connected in series in a first direction; and the third row 707 includes two semiconductor singles. 771 and 772 are connected in series in the first direction. The first electrode 741 includes a first extension portion 7411, and the second electrode 742 includes a second extension portion 7421. In addition, one of the plurality of semiconductor units

單7L上的第一電極741包含二個第一電極墊7412， 且另一半導體單元上的第二電極742包含二個第二 墊7422。連接部743於半導體單元之間形成一 。第22圖是第20圖中所示之光電元件7〇 效電路圖。 1 〜寸 第23圖揭示一符合本案第八實施例之光電元件 上視圖。第24圖係光電元件8〇的3D立體圖t ^電元件80的大小是85x85mil2,其驅動電壓 igv，半導體單元的驅動電壓約為3v ;依照公^ LVf_)，於本實施例中，光電元件80包含48個半導體 =兀配置於行 801、802、803、804、805、806 及 807The first electrode 741 on the single 7L includes two first electrode pads 7412, and the second electrode 742 on the other semiconductor unit includes two second pads 7422. The connecting portion 743 is formed between the semiconductor units. Fig. 22 is a circuit diagram of the photovoltaic element 7 shown in Fig. 20. 1 to inch Fig. 23 shows a top view of a photovoltaic element in accordance with an eighth embodiment of the present invention. Fig. 24 is a 3D perspective view of the photovoltaic element 8〇. The size of the electrical element 80 is 85x85 mil2, the driving voltage igv thereof, and the driving voltage of the semiconductor unit is about 3 volts. According to the LVf_), in the present embodiment, the photovoltaic element 80 Contains 48 semiconductors = 兀 arranged in rows 801, 802, 803, 804, 805, 806, and 807

Ur1:03'805、及807中分別包含七個半導 ΐίίΪΊ 一 Γ串接;行8〇2及_中包含七個 向串接；第四行綱包含六個 個數包半 8且單元、811的第一半導體層121上， 墊8422，^位於第半二842包含一第二電極 的Ϊ —電極841係位於第一電極 斤置的半導體單元之外的半導體單元上；具 17 201203534 8421的第二電極842係位於所有半導 J早；上。連接部_於半導體單元之間 2係位於第二半導體，123上，藉由i接 #與半導體單元812的第一電極料】連接；第-:極墊8422所位於的半導體單元 妾一 干导體早το 872的第二電極842連接。 90夕Π圖揭示—符合本案第九實施例之光電元件 d光電元件9〇包含48個半導體單元配 J [仃 801、802、803、804、805、806 及 807 中。 ，、外觀及電極配置與光電元件80相似，差別在於第 一電極墊9412係形成於半導體單元811的第二半 體層123上，藉由連接部843與半導體單元812的 一電極841形成串接；第二電極墊9422係形 L體,單、元871的第二半導體層1231，藉由連接部 843與半導體單元872的第二電極842形成串接。告 有一外部電源供應電流自第二電極墊9422注入，& 由，一電極墊9412輸出時，由於第二電極墊9422下 ^半導體單元871電阻大於其與連接部843與半導體 單元872的第二電極842的串接電阻，因此電流直接 自第二電極塾9422經由連接部843流向半導體單元 812的第一電極841，而不會流向半導體單元871下 的第一半導體層121、活性區122、以及第二半導體 層123。同樣的電流在流至半導體單元812的第一電 極841，經由連接部843流向第一電極墊9412後， 並不會流向半導體單元811下方的第一半導體層 121、活性區122、以及第二半導體層123，而是直接 輸出至外部電源。因此第一電極墊9412及第二電極 塾9422下方的半導體單元8U及871不會產生光。 18 201203534 為了進-步電性隔絕電極墊及下 ;極墊與半導體單元之間形成-絕緣層，避免因：電 机造^貫穿電極墊下方的半導體層形成短路。 丄…ί ^ 一電極墊9412及第二電極墊9422下方 2 ίΐϊί元不發光’因此第一電極墊9412面積可 與半導體單元871的面積;致第相-當電== ，製，之良率。此外，光電元件9〇中第一電極墊9412 ί Hi:件80中的第二電極墊8422搭配，此時 電極墊 係大致整面覆蓋於半導體單元811 半導^導?7?二3上’而第二電極墊8422係位於 丰導體早兀871的部份第二半導體層123 2塾9412下方的半導體單元無電流注人，因^不 楚而第二電極墊8422所位於的半導體單元87i =第二電極841，藉由連接部843與半導體單元872 的第一電極842連接，當電流注入時，第-=所位於的的半導體單元871會發光第;^墊 =^件90中第二電極墊9422亦可與光電元件肋 中的第一電極墊8412搭配，此時第一電極墊8412 ^於半導體單元811的部份第一半導體ΐ2ι之上，而 電極墊9422係大致整面覆蓋於半導體 導體们23之上；第—電極墊所位於的半導1 811上的第二電極842，藉由連接部843與 J體早το 812的第一電極841連接，當電流注入 第一電極墊8412所位於的半導體單元811會發光， 而〉主入第二電極墊9422的電流並不會流經半導體 的活性區122，而係直接藉由連接部843 ^巧單元872，因此第二電極塾9422所位於的半 導體早元871不發光。 卞 第一半導體層、活性層、及第二半導.體層的材 201203534 料包含一或多個元素選自於Ga、A卜In、As、P、N 及Sl所構成的群組’例如GaN、AlGaN、InGaN、Ur1:03'805, and 807 respectively contain seven semi-conductors ΐίίΪΊ a concatenation; rows 8〇2 and _ contain seven concatenations; the fourth row contains six packets and a half of 8 units, On the first semiconductor layer 121 of the 811, the pad 8422 is located on the semiconductor unit of the second electrode 842 including a second electrode, which is located on the semiconductor unit outside the semiconductor unit of the first electrode; and 17 201203534 8421 The second electrode 842 is located on all of the semiconductors J; The connection portion_between the semiconductor units 2 is located on the second semiconductor 123, and is connected to the first electrode material of the semiconductor unit 812 by the interface 812; the semiconductor unit of the first-pole pad 8422 is a dry conductor The second electrode 842 of the early το 872 is connected. 90 Π 揭示 — — 符合 符合 符合 符合 符合 d d d d d d d d d d d d d d d d d d 801 801 801 801 801 801 801 801 801 801 801 801 801 801 801 801 801 801 The difference between the appearance and the electrode arrangement is similar to that of the photo-electric element 80. The difference is that the first electrode pad 9412 is formed on the second half layer 123 of the semiconductor unit 811, and is connected in series with an electrode 841 of the semiconductor unit 812 by the connection portion 843; The second electrode pad 9422 is formed in a L-body, and the second semiconductor layer 1231 of the single element 871 is connected in series with the second electrode 842 of the semiconductor unit 872 via the connection portion 843. An external power supply current is injected from the second electrode pad 9422, and when the output is performed by an electrode pad 9412, the resistance of the semiconductor unit 871 is greater than that of the second electrode pad 9422 and the second portion of the semiconductor unit 872 The electrodes 842 are connected in series, so that current flows directly from the second electrode 塾9422 to the first electrode 841 of the semiconductor unit 812 via the connection portion 843 without flowing to the first semiconductor layer 121 under the semiconductor unit 871, the active region 122, and The second semiconductor layer 123. The same current flows to the first electrode 841 of the semiconductor unit 812, and flows to the first electrode pad 9412 via the connection portion 843, and does not flow to the first semiconductor layer 121, the active region 122, and the second semiconductor under the semiconductor unit 811. Layer 123 is output directly to an external power source. Therefore, the semiconductor elements 8U and 871 under the first electrode pad 9412 and the second electrode 塾9422 do not generate light. 18 201203534 In order to further electrically isolate the electrode pad and the lower surface; an insulating layer is formed between the electrode pad and the semiconductor unit to avoid short-circuiting of the semiconductor layer under the electrode pad by the motor.丄...ί ^ an electrode pad 9412 and a second electrode pad 9422 below 2 ίΐϊί 元 does not emit light 'so the area of the first electrode pad 9412 can be compared with the area of the semiconductor unit 871; to the first phase - when electricity ==, system, the yield . In addition, the first electrode pad 9422 in the photo-electric element 9 is matched with the second electrode pad 8422 in the device 80. At this time, the electrode pad is substantially overlaid on the semiconductor unit 811 semi-conducting guide 7? The second electrode pad 8422 is not in the semiconductor unit under the second semiconductor layer 123 2 94112 of the ferroconductor early 871, and the semiconductor unit 87i where the second electrode pad 8422 is located is not. The second electrode 841 is connected to the first electrode 842 of the semiconductor unit 872 via the connection portion 843. When the current is injected, the semiconductor unit 871 where the first-= is located emits light; the second electrode of the pad 90 The pad 9422 may also be paired with the first electrode pad 8412 of the photo-electric element rib. At this time, the first electrode pad 8412 is over a portion of the first semiconductor device 2112 of the semiconductor unit 811, and the electrode pad 9422 is substantially entirely covered on the semiconductor. Above the conductors 23; the second electrode 842 on the semi-conductor 1 811 where the first electrode pad is located is connected to the first electrode 841 of the J body early το 812 by the connection portion 843, and the current is injected into the first electrode pad 8412 The semiconductor unit 811 is located to emit light, and the main entry Current electrode pad 9422 is not flowing through the semiconductor active region 122, and portion 843 is connected by a direct line ^ Qiao unit 872, the second electrode 9422 is located Sook early semiconductor element 871 does not emit light. The material of the first semiconductor layer, the active layer, and the second semiconductor layer 201203534 contains one or more elements selected from the group consisting of Ga, A, As, As, P, N, and S1, such as GaN. , AlGaN, InGaN,

AlGalnN、GaP、GaAs、GaAsP、GaNAs、或 Si ;基 板的材料包含藍寶石、GaAs、GaP、Sic、Zn〇、GaN、 AIN、Cu、或 Si。 本發明所列舉之各實施例僅用以說明本發明， 並非用以限制本發明之範圍。任何人對本發明所作之 ，，顯而易知之修飾或變更皆不脫離本發明之精 .與範圍。 【圖式簡單說明】 =1圖係依本案一實施例所繪示之光電元件上視圖； 弟2圖係第1圖所示之光電元件剖面圖； =3圖係第1圖所示之光電元件3D立體圖； 4圖係第1圖所示之光電元件等效電路圖； =5圖係依本案一實施例所繪示之光電元件上視圖； 6圖係第5圖所示之光電元件立體圖； 第7圖係第5圖所示之光電元件等效電路圖； ^ 8圖係依本案一實施例所繪示之光電元件上視圖； ★ 9圖係第8圖所示之光電元件3D立體圖； 第10圖係第8圖所示之光電元件等效電路圖； =11圖係依本案一實施例所繪示之光電元件上視 圖； 第12圖係第11圖所示之光電元件3D立體圖； . 第圖係第11圖所示之光電元件等效電路圖； ^ u圖係依本案—實施例所繪/之光電電元圖件上視 间 ， 第15圖係第14圖所示之光電元件3D立體圖 第16圖係第Η圖所示之光電元；電:圖圖； 201203534 第18圖係第17圖所示之光電元件3D立體圖； 第19圖係第17圖所示之光電元件等效電路圖； 第20圖係依本案一實施例所繪示之光電元件上視 圖； 第21圖係第20圖所示之光電元件3D立體圖； 第22圖係第20圖所示之光電元件等效電路圖； 第23圖係依本案一實施例所繪示之光電元件上視 圖； 第24圖係第23圖所示之光電元件3D立體圖； 第25圖係依本案一實施例所繪示之光電元件上視 • 圖。 【主要元件符號說明】 10、20、30、40、50、60、70、80、90 光電元 件；11、21、31、41、51、61、71、81 基板；141、 24卜34卜44卜54卜64卜74卜841第一電極；142、 242、 342、442、542、642、742、842 第二電極；143、 243、 343443、543、643、743、843 連接部；121 第 一半導體層；123第二半導體層；122活性區；170 溝槽；111、311 分割道；1411、2411、3411、4411、 零 54U、64U、7411、8411 第一延伸部；1421、2421、 342卜442卜542卜6421、742卜8421第二延伸部； 1412、2412、3412、4412、5412、6412、7412、8412、 9412 第一電極墊；1422、2422、3422、4422、5422、 6422、7422、8422、9422 第二電極墊；105、106、 107 、 108 、 109 、 205 、 206 、 207 、 208 、 209 、 305 、 306 、 307 、 308 、 309 、 405 、 406 、 407 、 505 、 506 、 507 、 605 、 606 、 607 、 705 、 706 、 707 、 801 、 802 、 803、804、805、806、807 行；15卜 152、153、154、 155 、 161 、 162 、 163 、 164 、 165 、 171 、 172 、 173 、 21 201203534 174、 181、182、183、184、185、191、192、193、 194 、 195 、 251 、 252 、 253 、 254 、 255 、 261 、 262 、 263 、 264 、 271 、 272 、 273 、 274 、 275 、 281 、 282 、 283 、 284 、 291 、 292 、 293 、 294 、 295 、 351 、 352 、 353 、 354 、 355 、 36卜 362 、 363 、 364 、 371 、 372 、 373 、 374 、 375 、 381 、 382 、 383 、 384 、 391 、 392 、AlGalnN, GaP, GaAs, GaAsP, GaNAs, or Si; the material of the substrate comprises sapphire, GaAs, GaP, Sic, Zn, GaN, AIN, Cu, or Si. The examples of the invention are intended to be illustrative only and not to limit the scope of the invention. Any modification or alteration of the present invention by those skilled in the art will be made without departing from the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS [FIG. 1] FIG. 1 is a top view of a photovoltaic element according to an embodiment of the present invention; FIG. 2 is a cross-sectional view of a photovoltaic element shown in FIG. 1; 3D perspective view of the component; Fig. 4 is an equivalent circuit diagram of the photovoltaic element shown in Fig. 1; =5 is a top view of the photovoltaic element according to an embodiment of the present invention; 6 is a perspective view of the photovoltaic element shown in Fig. 5; Figure 7 is an equivalent circuit diagram of the photovoltaic element shown in Figure 5; Figure 8 is a top view of the photovoltaic element according to an embodiment of the present invention; ★ Figure 9 is a 3D perspective view of the photovoltaic element shown in Figure 8; 10 is an equivalent circuit diagram of the photovoltaic element shown in FIG. 8; =11 is a top view of the photovoltaic element according to an embodiment of the present invention; and FIG. 12 is a 3D perspective view of the photovoltaic element shown in FIG. Figure 11 is an equivalent circuit diagram of the photoelectric element shown in Fig. 11; ^ u is a view of the photoelectric element shown in the present embodiment - the photocell diagram of the embodiment, Fig. 15 is a 3D perspective view of the photovoltaic element shown in Fig. 14. Figure 16 is a photocell shown in Figure ;; electricity: diagram; 201203534 Figure 18 is the light shown in Figure 17. Figure 3 is an equivalent circuit diagram of the photovoltaic element shown in Figure 17; Figure 20 is a top view of the photovoltaic element according to an embodiment of the present invention; Figure 21 is a photovoltaic element shown in Figure 20 3D perspective view; Fig. 22 is an equivalent circuit diagram of the photovoltaic element shown in Fig. 20; Fig. 23 is a top view of the photovoltaic element according to an embodiment of the present invention; Fig. 24 is a photovoltaic element 3D shown in Fig. 23. Fig. 25 is a top view of a photovoltaic element according to an embodiment of the present invention. [Description of main component symbols] 10, 20, 30, 40, 50, 60, 70, 80, 90 photoelectric components; 11, 21, 31, 41, 51, 61, 71, 81 substrates; 141, 24, 34, 44 a first electrode; 142, 242, 342, 442, 542, 642, 742, 842 a second electrode; 143, 243, 343443, 543, 643, 743, 843 a connection; 121 first Semiconductor layer; 123 second semiconductor layer; 122 active region; 170 trench; 111, 311 split track; 1411, 2411, 3411, 4411, zero 54U, 64U, 7411, 8411 first extension; 1421, 2421, 342 442 542 642, 742, 8421 second extension; 1412, 2412, 3412, 4412, 5412, 6412, 7412, 8412, 9412 first electrode pad; 1422, 2422, 3422, 4422, 5422, 6422, 7422 8422, 9422 second electrode pads; 105, 106, 107, 108, 109, 205, 206, 207, 208, 209, 305, 306, 307, 308, 309, 405, 406, 407, 505, 506, 507, 605, 606, 607, 705, 706, 707, 801, 802, 803, 804, 805, 806, 807; 15 152, 153, 154 , 155 , 161 , 162 , 163 , 164 , 165 , 171 , 172 , 173 , 21 201203534 174 , 181 , 182 , 183 , 184 , 185 , 191 , 192 , 193 , 194 , 195 , 251 , 252 , 253 , 254 , 255 , 261 , 262 , 263 , 264 , 271 , 272 , 273 , 274 , 275 , 281 , 282 , 283 , 284 , 291 , 292 , 293 , 294 , 295 , 351 , 352 , 353 , 354 , 355 , 36 362, 363, 364, 371, 372, 373, 374, 375, 381, 382, 383, 384, 391, 392,

393 、 394 、 395 、 451 、 452 、 453 、 454 、 455 、 461 、 462、463、464、465、466、471、472、473、474、 475 、 551 、 552 、 553 、 554 、 561 ' 562 、 563 、 571 、 572、573、574、651、652、661、662、663、664、 671 、 672 、 751 、 752 、 761 、 762 、 769 、 771 、 772 、 811、812、871、872 半導體單元；1411a、2411a 第 一曲線延伸部；1421a、2421a第二曲線延伸部； 1421b、2421b、3411b、4411a 直線延伸部；1411c、 1421c、2411c、3411c、4411c 二階延伸部；3411a 曲 線延伸部。393, 394, 395, 451, 452, 453, 454, 455, 461, 462, 463, 464, 465, 466, 471, 472, 473, 474, 475, 551, 552, 553, 554, 561 '562, 563, 571, 572, 573, 574, 651, 652, 661, 662, 663, 664, 671, 672, 751, 752, 761, 762, 769, 771, 772, 811, 812, 871, 872 semiconductor units; 1411a, 2411a first curved extension; 1421a, 2421a second curved extension; 1421b, 2421b, 3411b, 4411a linear extension; 1411c, 1421c, 2411c, 3411c, 4411c second-order extension; 3411a curved extension.

22twenty two

Claims (1)

201203534 七、申請專利範圍： 1. 一種光電元件，包含： 一基板； 複數個半導體單元彼此之間電性連接且位於該基 板上’其中各該些半導體單元包含一第一半導體層、 一第二半導體層、以及一活性區介於其之間； 複數個第一電極分別位於該第一半導體層上； 一連接部形成於該些半導體單元上以電性串接該 些半.導體單元；以及201203534 VII. Patent application scope: 1. A photovoltaic element, comprising: a substrate; a plurality of semiconductor units electrically connected to each other and located on the substrate; wherein each of the semiconductor units comprises a first semiconductor layer, a second a semiconductor layer and an active region interposed therebetween; a plurality of first electrodes are respectively disposed on the first semiconductor layer; a connecting portion is formed on the semiconductor units to electrically connect the half of the conductor units; 複數個第二電極分別位於該第二半導體層上，其 中，該些第一電極中至少有一個包含一第一延伸部，、 以及該些第二電極中至少有一個包含一第二延伸部。 ^申；專利雜1項之光電元件，其中該些半導 體早7L的驅動電壓及/或面積大致相同。 範圍第2項之光電元件，其中該些半導 體早疋包3至少兩種不同的形狀。 巧利uv項之光電元件，其中該第-延 部，且ί ί以延=含，直線延伸 包含-二階延伸吝一部中至少有一個 5·如申請專利範圍第 電極分別包含一第— 包含一第二延伸部。 6.如申請專利範圍第 延伸部分別包含一第 1項之光電元件，其中該些第一 延伸部，以及該些第二電極分別 5項之光電元件，其中該些第一 一曲線延伸部，以及該些第二延 23 201203534 伸部分別包含一第二曲線延伸部；該第一曲線延伸部 及S亥第二曲線延伸部不平行於該些半導體單元的任— 邊。 7.如申請專利範圍第5項之光電元件，其中該些第— 電極分別包含一直線延伸部，以及該些第二電極分 包含一直線延伸部。 8.如申請專利範圍第1項之光電元件，其中該些複 個半導體單元包含一第一半導體單元、一第二^導體 單元、以及一第三半導體單元，其中，該些第一電極 中之一包含一第一電極墊，該第一電極墊位於該第一 f導體單元上，該第一半導體單元位於該基板之一 落區上，該些第二電極中之一包含一第二電極墊，該 電極墊位於該第二半導體單元上，該第二半導g 單，位於該基板之另一角落區上；以及該第一延伸部 及該第二延伸部位於沒有電極墊的該第三半導體 上。 利範圍第8項之光電元件，其中位於該第 體早元上的該第一電極更包含一延伸 觸’且’或位於該第二半導體單元上的該第 一電極更包含一延伸部與該第二電極墊接觸。 :申〇:及申ίί利範圍第1項之光電元件’其中該第-延 延伸部中至少有一個包含-曲線延伸 4該曲線延伸部不平行於該些半導體單元的任一邊。 1!半=|專禾;範圍第1項之光電元件，其中任-該 導體早兀上之該第-延伸部自該半導體單元的第 24 201203534 伸部自該‘導2以:㉙延伸’且該第二延 第-延伸部係位於該第:延;以第-邊延伸，該 光電元件，其中該些半導 該第：及第二半導體單:係配二置犮一第第四半導體單元， ㈡第四半導體單元係配置於-與該葉；相=;A plurality of second electrodes are respectively disposed on the second semiconductor layer, wherein at least one of the first electrodes comprises a first extension, and at least one of the second electrodes comprises a second extension. ^申; Patent No. 1 of the photovoltaic elements, wherein the semiconductors have a drive voltage and/or area that is approximately the same as 7L. The photovoltaic element of the second aspect, wherein the semiconductors have at least two different shapes. The optoelectronic component of the uv uv item, wherein the first extension, and the latitude extension, the linear extension comprises - the second-order extension, at least one of which is 5; the first electrode of the patent application includes a first - a second extension. 6. The extension of the patent application range includes a photovoltaic element of item 1, wherein the first extension portion, and the second electrode are respectively five elements of the photovoltaic element, wherein the first one-curve extension portion, And the second extension 23 201203534 extensions respectively comprise a second curved extension; the first curved extension and the second curved extension are not parallel to any of the semiconductor units. 7. The photovoltaic element of claim 5, wherein the first electrodes each comprise a linear extension and the second electrode portions comprise a linear extension. 8. The photovoltaic device of claim 1, wherein the plurality of semiconductor units comprise a first semiconductor unit, a second conductor unit, and a third semiconductor unit, wherein the first electrodes a first electrode pad is disposed on the first f-conductor unit, the first semiconductor unit is located on a landing area of the substrate, and one of the second electrodes comprises a second electrode pad The electrode pad is located on the second semiconductor unit, the second semiconductor guide is located on another corner region of the substrate; and the first extension portion and the second extension portion are located at the third portion without the electrode pad On the semiconductor. The photovoltaic device of item 8, wherein the first electrode on the first element further comprises an extension contact and the first electrode on the second semiconductor unit further comprises an extension portion and the The second electrode pad is in contact. The invention relates to: and the photo-electric component of claim 1 wherein at least one of the first extensions comprises a curve extension 4 which is not parallel to either side of the semiconductor units. 1! 半=|Specialty; the photovoltaic element of the first item, wherein the first extension of the conductor is from the 24th 201203534 extension of the semiconductor unit from the 'guide 2 to: 29 extension' And the second extension-extension portion is located at the first extension; the photo-element extends from the first side, wherein the semiconductors are: and the second semiconductor: the second semiconductor Unit, (b) the fourth semiconductor unit is disposed in - with the leaf; phase =; 請專利範圍第12項之光電元件， 及該第二延伸部係位於該第 ^第- 該第三半導體單元上的該第-電極以；士’ 伸。p’遠第-延伸部自該第一半導體：延 j第：=導體單元一第二邊延伸，該第二延向 :邊最接近於基板的一第一邊，該第一：的第 第二邊最接近於相對於該基板第一邊的一疋的 ίέΐ伸部該！三半導體單元一第二邊向；㉚：； 導體早兀一第一邊延伸，其中該第三半導體 二+ 二邊最接近於該基板的第二邊，該第三半導 的第 第一邊最接近於該基板的第一邊。 π的 14. 如申請專利範圍第13項之光電元件，其中該 電極包含形成於該第三半導體單元上的第四Λ : 部’該第四延伸部自該第三半導體單元的第一邊申 第三半導體單元的第二邊延伸。 5亥 15. 如申請專利範圍第13項之光電元件，其令該第— 半導體單元上的該些電極佈局與該第二半導體單元i 25 201203534 的該些電極佈局相同，且/或該第三半導體單元上 ，電極佈局與該第四半導體單元上的該些電極佈局g 16. 如申請專利範圍第13項之光電元件，其中該第一 行的該些電極佈局與該第二行的該些電極佈局不相 同’且/或該第一行中的該些半導體單元數目不^於 第二行的該些半導體單元數目。 、 17. 如申請專利範圍第13項之光電元件，更包含複數 個該第一行及該第二行重複配置於該基板上。 18. 如申請專利範圍第13項之光電元件，其中該第一 行中的該些半導體單元藉由一第一連接部朝一第一方 向串接，該第二行中的該些半導體單元藉由一第二連 接部朝一第二方向串接，其中該第一方向及該第二方 向相反。 19. 如申請專利範圍第1項之光電元件，更包含一接 合層形成於該基板及該些半導體層單元之間。 20. —種光電元件，包含： 一基板； 複數個半導體單元彼此之間電性連接且位於該基 板上’其中各該些半導體單元包含一第一半導體層、 一第二半導體層、以及一活性區介於其之間； 複數個第一電極分別位於該第一半導體層上；以及 複數個第二電極分別位於該第二半導體層上，其 中，該些第一電極中至少有一個包含一第一延伸部， 以及該些第二電極中至少有一個包含一第二延伸部， 26 201203534 其中該些半導體單元之驅動電壓大致相同。 21. —種光電元件，包含： 一基板；The photovoltaic element of claim 12, and the second extension portion are located on the first - the third semiconductor unit. The p' farthest-extension portion extends from the first semiconductor: the extension j: = the second side of the conductor unit, the second extension: the side is closest to a first side of the substrate, the first: the first The two sides are closest to the έΐ έΐ extension of the first side of the substrate! The third semiconductor unit has a second side; 30:; the conductor extends from the first side, wherein the third semiconductor has two sides and is closest to the second side of the substrate, and the first side of the third semiconductor The closest to the first side of the substrate. 14. The photovoltaic element of claim 13, wherein the electrode comprises a fourth germanium formed on the third semiconductor unit: the fourth extension from the first side of the third semiconductor unit The second side of the third semiconductor unit extends. 5海 15. The photovoltaic element of claim 13, wherein the electrode layout on the first semiconductor unit is the same as the electrode layout of the second semiconductor unit i 25 201203534, and/or the third The electrode arrangement on the semiconductor unit and the electrode arrangement on the fourth semiconductor unit. The photovoltaic element according to claim 13 wherein the electrode layout of the first row and the second row The electrode layouts are not the same 'and/or the number of semiconductor units in the first row is not the number of the semiconductor cells in the second row. 17. The photovoltaic element of claim 13, further comprising a plurality of the first row and the second row being repeatedly disposed on the substrate. 18. The photovoltaic device of claim 13, wherein the semiconductor units in the first row are connected in series by a first connection portion, wherein the semiconductor units in the second row are A second connecting portion is connected in series in a second direction, wherein the first direction and the second direction are opposite. 19. The photovoltaic device of claim 1, further comprising a bonding layer formed between the substrate and the semiconductor layer units. 20. A photovoltaic element comprising: a substrate; a plurality of semiconductor units electrically connected to each other and located on the substrate, wherein each of the semiconductor units comprises a first semiconductor layer, a second semiconductor layer, and an active a plurality of first electrodes are respectively located on the first semiconductor layer; and a plurality of second electrodes are respectively located on the second semiconductor layer, wherein at least one of the first electrodes comprises a first An extension portion, and at least one of the second electrodes includes a second extension portion, 26 201203534 wherein the driving voltages of the semiconductor units are substantially the same. 21. A photovoltaic element comprising: a substrate; 複數個半導體單元彼此之間電性連接且位於該基 板上’其中各該些半導體單元包含一第一半導體層、 一第二半導體層、以及一活性區介於其之間， 複數個第一電極分別位於該第一半導體層上；以及 複數個第二電極分別位於該第二半導體^上:苴 該些複數個半導體單元包含一第一半導體，二 二半導體單元，以及一第三半導體單元，該些第一電 極中的至少一個包含一第一電極塾 的該第-半導體單元上，以及兮:„圍 一佃治人一笙-I 以及肩些第二電極中的至少 導體單^上，極墊位於該基板最外圍的該第二半 中該第一電極及該第二電極包含-ΐ 導體U 一延伸部位於沒有電極墊的該第三半a plurality of semiconductor units electrically connected to each other and located on the substrate, wherein each of the semiconductor units comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed therebetween, the plurality of first electrodes Separately located on the first semiconductor layer; and a plurality of second electrodes respectively disposed on the second semiconductor: the plurality of semiconductor units comprise a first semiconductor, a second semiconductor unit, and a third semiconductor unit, At least one of the first electrodes includes a first semiconductor unit of the first electrode ,, and 兮: 围 佃 佃 佃 笙 I I 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及The pad is located in the second half of the outermost periphery of the substrate. The first electrode and the second electrode comprise -ΐ a conductor U. The extension is located in the third half without the electrode pad. 2727
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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI466284B (en) * 2010-07-02 2014-12-21 Epistar Corp An optoelectronic device
KR20140059985A (en) * 2012-11-09 2014-05-19 엘지이노텍 주식회사 Light emitting device
KR101992366B1 (en) * 2012-12-27 2019-06-24 엘지이노텍 주식회사 Light emitting device
TWI633683B (en) * 2013-08-27 2018-08-21 晶元光電股份有限公司 Light-emitting element having a plurality of light-emitting structures
TWI597864B (en) 2013-08-27 2017-09-01 晶元光電股份有限公司 Light-emitting element having a plurality of light-emitting structures
CN110047865B (en) * 2013-09-03 2024-02-23 晶元光电股份有限公司 Light-emitting element with multiple light-emitting structures
CN110176469B (en) * 2013-11-29 2022-01-04 晶元光电股份有限公司 Light emitting diode element
JP6351520B2 (en) * 2014-08-07 2018-07-04 株式会社東芝 Semiconductor light emitting device
CN110690242B (en) * 2015-02-13 2023-06-30 首尔伟傲世有限公司 Light-emitting element
KR102647673B1 (en) * 2016-09-27 2024-03-14 서울바이오시스 주식회사 Light emitting diode
KR102480220B1 (en) * 2016-04-08 2022-12-26 삼성전자주식회사 Lighting emitting diode module and display panel
KR101987196B1 (en) * 2016-06-14 2019-06-11 삼성디스플레이 주식회사 Pixel structure, display apparatus including the pixel structure and method of manufacturing the same
KR102363036B1 (en) * 2017-04-03 2022-02-15 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Semiconductor device and semiconductor device package
CN107516701B (en) * 2017-07-14 2019-06-11 华灿光电(苏州）有限公司 A kind of high pressure light-emitting diode chip and preparation method thereof
TWI731163B (en) * 2017-09-13 2021-06-21 晶元光電股份有限公司 Semiconductor device

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5126483A (en) * 1974-08-29 1976-03-04 Mitsubishi Electric Corp
JPH10107316A (en) * 1996-10-01 1998-04-24 Toyoda Gosei Co Ltd Semiconductor light-emitting device of iii group nitride
AU2001244670A1 (en) * 2000-03-31 2001-10-08 Toyoda Gosei Co. Ltd. Group-iii nitride compound semiconductor device
JP4810746B2 (en) * 2000-03-31 2011-11-09 豊田合成株式会社 Group III nitride compound semiconductor device
US6547249B2 (en) 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
JP4585014B2 (en) * 2002-04-12 2010-11-24 ソウル セミコンダクター カンパニー リミテッド Light emitting device
JP3822545B2 (en) * 2002-04-12 2006-09-20 士郎 酒井 Light emitting device
DE60336252D1 (en) * 2002-08-29 2011-04-14 Seoul Semiconductor Co Ltd LIGHT-EMITTING COMPONENT WITH LIGHT-EMITTING DIODES
JP4415575B2 (en) 2003-06-25 2010-02-17 日亜化学工業株式会社 Semiconductor light emitting element and light emitting device using the same
JP4572604B2 (en) * 2003-06-30 2010-11-04 日亜化学工業株式会社 Semiconductor light emitting element and light emitting device using the same
EP1658642B1 (en) * 2003-08-28 2014-02-26 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
JP4160881B2 (en) * 2003-08-28 2008-10-08 松下電器産業株式会社 Semiconductor light emitting device, light emitting module, lighting device, and method for manufacturing semiconductor light emitting device
JP4432413B2 (en) * 2003-09-05 2010-03-17 日亜化学工業株式会社 Light source device and vehicle headlamp
US7755095B2 (en) 2003-12-24 2010-07-13 Panasonic Corporation Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device
US20050274970A1 (en) * 2004-06-14 2005-12-15 Lumileds Lighting U.S., Llc Light emitting device with transparent substrate having backside vias
KR100665116B1 (en) * 2005-01-27 2007-01-09 삼성전기주식회사 Galium Nitride-Based Light Emitting Device Having LED for ESD Protection
KR100652864B1 (en) * 2005-12-16 2006-12-04 서울옵토디바이스주식회사 Light emitting diode having an improved transparent electrode structure for ac power operation
DE102006015117A1 (en) * 2006-03-31 2007-10-04 Osram Opto Semiconductors Gmbh Electromagnetic radiation emitting optoelectronic headlights, has gallium nitride based light emitting diode chip, which has two emission areas
KR100833309B1 (en) * 2006-04-04 2008-05-28 삼성전기주식회사 Nitride semiconductor light emitting device
EP3223313B1 (en) * 2007-01-22 2021-04-14 Cree, Inc. Monolithic light emitter having multiple light emitting sub-devices
CN102779918B (en) * 2007-02-01 2015-09-02 日亚化学工业株式会社 Semiconductor light-emitting elements
KR100974923B1 (en) * 2007-03-19 2010-08-10 서울옵토디바이스주식회사 Light emitting diode
JP2009231135A (en) * 2008-03-24 2009-10-08 Toshiba Lighting & Technology Corp Illumination device
JP5229034B2 (en) * 2008-03-28 2013-07-03 サンケン電気株式会社 Light emitting device
KR101025972B1 (en) * 2008-06-30 2011-03-30 삼성엘이디 주식회사 Ac driving light emitting device
US20110121329A1 (en) 2008-08-06 2011-05-26 Helio Optoelectronics Corporation AC LED Structure
JP5217787B2 (en) * 2008-08-27 2013-06-19 日亜化学工業株式会社 Semiconductor light emitting device
WO2010050694A2 (en) 2008-10-29 2010-05-06 서울옵토디바이스주식회사 Light emitting diode
US8963175B2 (en) * 2008-11-06 2015-02-24 Samsung Electro-Mechanics Co., Ltd. Light emitting device and method of manufacturing the same
KR101020910B1 (en) * 2008-12-24 2011-03-09 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
JP4566267B1 (en) * 2009-04-21 2010-10-20 シャープ株式会社 Power supply
US9324691B2 (en) * 2009-10-20 2016-04-26 Epistar Corporation Optoelectronic device
WO2011115361A2 (en) * 2010-03-15 2011-09-22 서울옵토디바이스주식회사 Light-emitting device having a plurality of light-emitting cells
TWI466284B (en) * 2010-07-02 2014-12-21 Epistar Corp An optoelectronic device
JP5997737B2 (en) * 2014-03-28 2016-09-28 株式会社インフォシティ Content playback device

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