CN106328636A - Integrated LED device and preparing method thereof - Google Patents
Integrated LED device and preparing method thereof Download PDFInfo
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- CN106328636A CN106328636A CN201610887470.3A CN201610887470A CN106328636A CN 106328636 A CN106328636 A CN 106328636A CN 201610887470 A CN201610887470 A CN 201610887470A CN 106328636 A CN106328636 A CN 106328636A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The invention provides an integrated LED device and preparing method thereof. The device comprises several LED chips. The LED chip contains N type semiconductor layer, multiple quantum well luminous layer, P type semiconductor layer, N electrode and P electrode. The N electrode connects N type semiconductor layer electrically, and the P electrode connects P type semiconductor layer electrically. The graphical substrate is used for carrying the LED chips and comprises several primary interconnected areas and secondary interconnected areas. The N electrode and P electrode in the LED chips respectively connect the primary interconnected areas and secondary interconnected areas in the graphical substrate electrically. The device connects the LED chips and graphical substrate electrically with simple structure and manufacturing technology improving the reliability of device and realizing the large power and high current.
Description
Technical field
The present invention relates to semiconductor chip field, particularly relate to a kind of integrated LED device and manufacture method thereof.
Background technology
Light emitting diode (Light-Emitting Diode, LED) is a kind of semiconductor electronic component that can be luminous.This
Electronic component occurred as far back as 1962, can only send the HONGGUANG of low luminosity in early days, develop other monochromatic versions afterwards, time
The light that can send to today is throughout visible ray, infrared ray and ultraviolet, and luminosity also brings up to suitable luminosity.Owing to it has
Energy-saving and environmental protection, safety, life-span length, low-power consumption, low grade fever, high brightness, light modulation waterproof, miniature, shockproof, easy, light beam are concentrated, are safeguarded
The feature such as easy, can be widely applied to various instruction, show, decorate, the field such as backlight, general lighting.
Integrated LED device is the device that will be formed after plurality of LEDs chip-in series or parallel connection, to meet high voltage low current
The demand of work, current integrated LED device, main technological steps includes:
1. in LED chip, deposit the mask layer of larger thickness (as thickness is more than the SiO of 1 micron2、Si3N4Deng)；
2. use ICP (induction plasma coupled etch equipment) epitaxial layer carries out ICP etching or uses KOH solution or use
H2SO4:H3PO4Epitaxial layer is corroded by the solution of=3:1, makes to realize isolated groove between plurality of LEDs chip；
3. deposition insulating bag coating layer (oxide or nitride or nitrogen oxides) fill groove or cladding channel bottom and
Sidewall；
4. the electrode of plurality of LEDs chip is realized metal interconnection by semiconductor technology.
But the integrated LED device prepared of said method has a following deficiency:
Groove is relatively deep (usually 4-7 μm), and etch period is long, and cost is high；
In order to ensure effective electric insulation, it is necessary to deposit thicker insulating bag coating layer, because cladding is imperfect or film layer causes
Close property is poor, ESD and the IR yield that can cause is low, and the insulating wrapped film deposition time long cost that thickness is big simultaneously is high；
There is groove between different LED chip, groove is relatively deep, and trenched side-wall angle is relatively steep, and evaporation of metal is raw on LED chip surface
Long smooth homogeneous, but sidewall deposition thickness is relatively thin, becomes electric connection weak spot.
Therefore, for the problems referred to above, it is necessary to provide a kind of integrated LED device and manufacture method thereof.
Summary of the invention
It is an object of the invention to provide a kind of integrated LED device and manufacture method thereof, it can improve high-voltage LED device
The stability of part.
To achieve these goals, the technical scheme that the embodiment of the present invention provides is as follows:
A kind of integrated LED device, described integrated LED device includes:
Some LED chip, described LED chip includes n type semiconductor layer, multiple quantum well light emitting layer, p type semiconductor layer and N electricity
Pole and P electrode, described N electrode is electrically connected with n type semiconductor layer, and P electrode is electrically connected with p type semiconductor layer；
Graphical substrate, is used for carrying described LED chip, and described graphical substrate includes some first interconnection districts and the second interconnection
District, N electrode and P electrode in described LED chip are electrical with the first interconnection district in graphical substrate and the second interconnection district respectively
Connect.
As a further improvement on the present invention, described LED chip series, parallel or series-parallel connection in graphical substrate is arranged.
As a further improvement on the present invention, described first interconnection district is provided with some first vias, in the second interconnection district
Being provided with some second vias, in graphical substrate, the two sides in the first interconnection district and the second interconnection district extends through the first via and the
Two vias are electrically connected with.
As a further improvement on the present invention, described N electrode passes through In with the first interconnection district, P electrode with the second interconnection district
One or more in solder, Au-Sn solder, tin solder, ACF Anisotropic conductive adhesive are bonded.
As a further improvement on the present invention, at least side, the side of described LED chip is the inclined-plane of laser scribe.
The technical scheme that another embodiment of the present invention provides is as follows:
A kind of manufacture method of integrated LED device, described manufacture method includes:
One substrate is provided, and at substrate Epitaxial growth n type semiconductor layer, multiple quantum well light emitting layer, p type semiconductor layer；
Etched portions epitaxial layer forms N step to n type semiconductor layer；
P type semiconductor layer is formed P electrode, N step is formed N electrode；
To carrying out laser scribe between LED chip；
Thering is provided graphical substrate, described graphical substrate includes some first interconnection districts and the second interconnection district；
By LED wafer good for scribing and graphical substrate back bonding, make the N electrode in LED chip and P electrode respectively with figure
Change the first interconnection district on substrate and the second interconnection district to be electrically connected with；
At the bottom of peeling liner, obtain integrated LED device.
As a further improvement on the present invention, to carrying out laser scribe at least scribing between LED chip to section substrate.
As a further improvement on the present invention, in described graphical substrate, the first interconnection district is provided with some first vias,
Second interconnection district is provided with some second vias, and in graphical substrate, the two sides in the first interconnection district and the second interconnection district extends through
First via and the second via are electrically connected with.
As a further improvement on the present invention, described N electrode passes through In with the first interconnection district, P electrode with the second interconnection district
One or more in solder, Au-Sn solder, tin solder, ACF Anisotropic conductive adhesive are bonded.
As a further improvement on the present invention, described LED chip series, parallel or series-parallel connection in graphical substrate is arranged.
The invention has the beneficial effects as follows:
LED chip being electrically connected with graphical substrate, its structure and manufacturing process are simple, LED chip and existing conventional low
LED chip is identical；
Graphical substrate electrical connection is good, reliability is high, improves the reliability of device；
By interconnecting series, parallel and the hybrid connected structure in district in graphical substrate, high-power high electric current can be realized.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this
Some embodiments described in invention, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the sectional structure schematic diagram of integrated LED device in first embodiment of the invention；
Fig. 2 is the sectional structure schematic diagram of LED chip in first embodiment of the invention；
Fig. 3 is the plan structure schematic diagram of graphical substrate in first embodiment of the invention；
Fig. 4 is the sectional structure schematic diagram of graphical substrate in first embodiment of the invention；
Fig. 5 a ~ 5h is the manufacturing approach craft block diagram of integrated LED device in second embodiment of the invention.
Detailed description of the invention
For the technical scheme making those skilled in the art be more fully understood that in the present invention, real below in conjunction with the present invention
Execute the accompanying drawing in example, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described enforcement
Example is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, this area is common
The every other embodiment that technical staff is obtained under not making creative work premise, all should belong to present invention protection
Scope.
Shown in ginseng Fig. 1, the integrated LED device in first embodiment of the invention, including graphical LED chip 10 and use
In the graphical substrate 20 of carrying LED chip 10, below LED chip 10 and graphical substrate 20 are elaborated.
Ginseng Fig. 1 also combines shown in Fig. 2, and the LED chip 10 in present embodiment includes successively:
N type semiconductor layer 11, n type semiconductor layer can be N-type GaN etc., and n type semiconductor layer is formed N-type table top 101；
Multiple quantum well light emitting layer 12, luminescent layer can be GaN, InGaN etc.；
P type semiconductor layer 13, p type semiconductor layer can be p-type GaN etc.；
Be positioned on N-type table top 101 and with n type semiconductor layer 11 be electrically connected with N electrode 14 and be positioned at p type semiconductor layer 13
P electrode 15 that is upper and that be electrically connected with p type semiconductor layer 13.
It should be appreciated that the LED chip in the present invention is not limited to the LED chip in above-mentioned embodiment, real at other
Executing LED chip in mode and can also include current barrier layer, transparency conducting layer etc., citing illustrates the most one by one.
Ginseng Fig. 1 also combines shown in Fig. 3, Fig. 4, and the graphical substrate 20 in present embodiment is positioned at below LED chip 10, uses
In carrying LED chip, graphical substrate 20 includes some first interconnection districts 21 and the second interconnection district 22, the first interconnection district 21 and the
Two interconnection districts 22 can be metallic circuit etc., and metallic circuit is grown by evaporation technology on substrate, to realize the biography of the signal of telecommunication
Defeated.N electrode 14 and P electrode 15 in LED chip interconnect district 22 with the first interconnection district 21 and second in graphical substrate respectively
It is electrically connected with.
First interconnection district 21 is provided with some first vias 211, and the second interconnection district 22 is provided with some second vias 221,
In graphical substrate 20, the two sides in the first interconnection district 21 and the second interconnection district 22 extends through the first via 211 and the second via
221 to be electrically connected with the two sides of graphical substrate 20.
N electrode 14 in LED chip 10 is solid by the first weld part 31 with the first interconnection district 21 in graphical substrate 20
Fixed bonding, the P electrode 15 in LED chip 10 is fixed by the second weld part 32 with the second interconnection district 22 in graphical substrate 20
Bonding, the material of the first weld part 31 and the second weld part 32 can be selected for In solder, Au-Sn solder, tin solder, ACF
One or more in (Anisotropic Conductive Film) Anisotropic conductive adhesive.
Preferably, present embodiment illustrates as a example by two LED chip 10, the N electrode in two LED chip 10
14 and P electrode 15 respectively by the first weld part 31 and the second weld part 32 and the first interconnection district 21 in graphical substrate 20 and
Second interconnection district 22 phase bonding, middle the first adjacent interconnection district 21 and the second interconnection district 22 are arranged for conducting, to be formed by two
The integrated LED device that the series connection of individual LED chip is formed.
The embodiment obtained by the deformation of above-mentioned embodiment includes:
Being turned in two first interconnection districts 21 on substrate, two second interconnection district conductings, to carry out parallel connection by two LED chip
Form integrated LED device；
Integrated LED device is integrated by the LED chip of more than 2, by arrange the first interconnection district 21 of different modes conducting with
Second interconnection district 22, can be by multiple LED chip series, parallel or series-parallel connection, to obtain different types of integrated LED device.
Shown in ginseng Fig. 2, the inclined-plane that side, side is laser scribe 102 of LED chip, certainly, when the both sides of LED chip are equal
When needing laser scribe, side, both sides is inclined-plane.
Shown in ginseng Fig. 5 a ~ 5h, the preparation method of integrated LED device in second embodiment of the invention, including following step
Rapid:
One substrate is provided, and at substrate Epitaxial growth n type semiconductor layer, multiple quantum well light emitting layer, p type semiconductor layer；
Etched portions epitaxial layer forms N step to n type semiconductor layer；
P type semiconductor layer is formed P electrode, N step is formed N electrode；
To carrying out laser scribe between LED chip；
Thering is provided graphical substrate, described graphical substrate includes some first interconnection districts and the second interconnection district；
By LED wafer good for scribing and graphical substrate back bonding, make the N electrode in LED chip and P electrode respectively with figure
Change the first interconnection district on substrate and the second interconnection district to be electrically connected with；
At the bottom of peeling liner, obtain integrated LED device.
It is described in detail below in conjunction with accompanying drawing.
Shown in ginseng Fig. 5 a, it is provided that a substrate 10 ', and at substrate Epitaxial growth n type semiconductor layer 11, multiple quantum well light emitting
Layer 12, p type semiconductor layer 13；
Shown in ginseng Fig. 5 b, MESA etches, and etched portions epitaxial layer to n type semiconductor layer forms N step 101, it is preferable that this step
In etching can use ICP etch (induction plasma coupled etch) or wet etching.
Shown in ginseng Fig. 5 c, p type semiconductor layer 13 forms P electrode 15, N step 101 is formed N electrode 14, this step
In Zhou, N electrode 14 and P electrode 15 can be formed by the way of evaporation grows, and N electrode 14 and P electrode 15 are for using multiple gold
Belong to the reflecting electrode of material evaporation growth.
Shown in ginseng Fig. 5 d, to carrying out laser scribe between LED chip, laser scribe can be complete by various laser cutting machines
Become, to carrying out laser scribe at least scribing between LED chip to section substrate.
Shown in ginseng Fig. 5 e, it is provided that graphical substrate 20, graphical substrate 20 includes that some first interconnection districts 21 and second are mutual
Connection district 22, it is identical with the graphical substrate 20 in the first embodiment, the most no longer repeats.
Shown in ginseng Fig. 5 f, by LED wafer good for scribing and graphical substrate 20 back bonding, make the N electrode in LED chip
14 and P electrode 15 be electrically connected with the first interconnection district 21 in graphical substrate 20 and the second interconnection district 22 respectively.
Wherein, N electrode 14 and P electrode 15 are respectively by the first weld part 31 and the second weld part 32 and graphical substrate 20
On the first interconnection district 21 and the second interconnection district 22 phase bonding, the material of the first weld part 31 and the second weld part 32 is chosen as In
One or more in solder, Au-Sn solder, tin solder, ACF Anisotropic conductive adhesive.
It is finally peeled away substrate 10 ', LED chip is stayed in graphical substrate, and LED chip is electrical with graphical substrate
Connect, obtain the integrated LED device shown in Fig. 5 g, 5f.
Wherein, in present embodiment, in graphical substrate, the first interconnection district and second interconnects series, parallel and the series-parallel connection in district
The electric current of the whole integrated LED device of structures shape and voltage characteristic.
Compared with prior art, present invention have the advantage that
Need not between LED chip be realized by deep etching, can be realized between LED chip by laser scribing and sliver
Electrical isolation；
Electrically interconnection architecture is realized by metal patternization on an other block graphics substrate, and the metal in interconnection district is on substrate
Being grown by evaporation technology, figure reliability is high, and electrical connection is good；
Without isolated groove, therefore need not the bigger oxide of deposit thickness or nitride or nitrogen oxides electric insulation cladding
Film layer.
As can be seen from the above technical solutions, the invention has the beneficial effects as follows:
LED chip being electrically connected with graphical substrate, its structure and manufacturing process are simple, LED chip and existing conventional low
LED chip is identical；
Graphical substrate electrical connection is good, reliability is high, improves the reliability of device；
By interconnecting series, parallel and the hybrid connected structure in district in graphical substrate, high-power high electric current can be realized.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of the spirit or essential attributes of the present invention, it is possible to realize the present invention in other specific forms.Therefore, no matter
From the point of view of which point, all should regard embodiment as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit requires rather than described above limits, it is intended that all by fall in the implication of equivalency and scope of claim
Change is included in the present invention.Should not be considered as limiting involved claim by any reference in claim.
Although moreover, it will be appreciated that this specification is been described by according to embodiment, but the most each embodiment only wraps
Containing an independent technical scheme, this narrating mode of description is only that for clarity sake those skilled in the art should
Description can also be formed those skilled in the art through appropriately combined as an entirety, the technical scheme in each embodiment
May be appreciated other embodiments.
Claims (10)
1. an integrated LED device, it is characterised in that described integrated LED device includes:
Some LED chip, described LED chip includes n type semiconductor layer, multiple quantum well light emitting layer, p type semiconductor layer and N electricity
Pole and P electrode, described N electrode is electrically connected with n type semiconductor layer, and P electrode is electrically connected with p type semiconductor layer；
Graphical substrate, is used for carrying described LED chip, and described graphical substrate includes some first interconnection districts and the second interconnection
District, N electrode and P electrode in described LED chip are electrical with the first interconnection district in graphical substrate and the second interconnection district respectively
Connect.
Integrated LED device the most according to claim 1, it is characterised in that described LED chip is gone here and there in graphical substrate
Connection, in parallel or series-parallel connection setting.
Integrated LED device the most according to claim 1, it is characterised in that described first interconnection district is provided with some the
One via, the second interconnection district is provided with some second vias, the first interconnection district and the two sides in the second interconnection district in graphical substrate
Extend through the first via and the second via is electrically connected with.
Integrated LED device the most according to claim 4, it is characterised in that described N electrode and the first interconnection district, P electrode
It is bonded by one or more in In solder, Au-Sn solder, tin solder, ACF Anisotropic conductive adhesive with the second interconnection district.
Integrated LED device the most according to claim 1, it is characterised in that at least side, the side of described LED chip is
The inclined-plane of laser scribe.
6. the manufacture method of an integrated LED device, it is characterised in that described manufacture method includes:
One substrate is provided, and at substrate Epitaxial growth n type semiconductor layer, multiple quantum well light emitting layer, p type semiconductor layer；
Etched portions epitaxial layer forms N step to n type semiconductor layer；
P type semiconductor layer is formed P electrode, N step is formed N electrode；
To carrying out laser scribe between LED chip；
Thering is provided graphical substrate, described graphical substrate includes some first interconnection districts and the second interconnection district；
By LED wafer good for scribing and graphical substrate back bonding, make the N electrode in LED chip and P electrode respectively with figure
Change the first interconnection district on substrate and the second interconnection district to be electrically connected with；
At the bottom of peeling liner, obtain integrated LED device.
The manufacture method of integrated LED device the most according to claim 6, it is characterised in that carry out between LED chip
Laser scribe at least scribing is to section substrate.
The manufacture method of integrated LED device the most according to claim 6, it is characterised in that in described graphical substrate,
First interconnection district is provided with some first vias, and the second interconnection district is provided with some second vias, and in graphical substrate, first is mutual
The two sides in connection district and the second interconnection district extends through the first via and the second via is electrically connected with.
The manufacture method of integrated LED device the most according to claim 8, it is characterised in that described N electrode is mutual with first
Connection district, P electrode pass through one or more in In solder, Au-Sn solder, tin solder, ACF Anisotropic conductive adhesive with the second interconnection district
It is bonded.
The manufacture method of integrated LED device the most according to claim 6, it is characterised in that described LED chip is at figure
On shape substrate, series, parallel or series-parallel connection are arranged.
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| CN201610887470.3A CN106328636A (en) | 2016-10-12 | 2016-10-12 | Integrated LED device and preparing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111900183A (en) * | 2019-05-06 | 2020-11-06 | 深圳第三代半导体研究院 | Integrated unit diode chip capable of emitting light uniformly |
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